• 한국초전도ㆍ저온공학회논문지
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• 제8권1호
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• pp.23-25
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• 2006

Optimization of process variables, including oxygen and water partial pressure and also an nesting temperature, was performed in batch-type process to fabricate YBCO films on LaAlO3 single crystal. In this work, YBCO oxide powder was used as a starting precursor for metal-organic deposition(MOD)method. The precursor films were fabricated in batch furnace and they were converted to the epitaxial YBCO films at the same furnace with varying the process variables. The oxygen partial pressure was varied from 100ppm to 2000ppm and the water partial pressure from 1.2% to 12.2%. The window for optimal P(O2) was narrow about 700ppm for batch-type process. YBCO films in bathc-thype MOD process were optimized at 740-770oC and P(H2O) of 2.3%-7.3%.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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• pp.451-454
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• 2001

The ionic conductivity of cubic solid solutions in the system $Y_{2}O_{3}-ZrO_{2}$ prepared by SHS was examined. Conductivity-temperature data obtained at $1000^{\circ}C$ in atmosphere of low oxygen partial pressure ($10^{-40}$ atm) for $Y_{2}O_{3}-ZrO_{2}$ cubic solid solutions indicated that these materials could be reduced, the degree of reduction being related to the measuring electric field. At low impressed fields no reduction was observed. Thus, these conductivity data give a transference number for the oxygen ion in $Y_{2}O_{3}-ZrO_{2}$ cubic solid solutions greater than 0.99.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집
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• pp.451-454
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• 2001

The ionic conductivity of cubic solid solutions in the system Y$_2$O$_3$-ZrO$_2$ prepared by SHS was examined. Conductivity-temperature data obtained at 1000$^{\circ}C$ in atmosphere of low oxygen partial pressure (10$\^$-40/ atm) for Y$_2$O$_3$-ZrO$_2$ cubic solid solutions indicated that these materials could be reduced, the degree of reduction being related to the measuring electric field. At low impressed fields no reduction was observed. Thus, these conductivity data give a transference number for the oxygen ion in Y$_2$O$_3$-ZrO$_2$ cubic solid solutions greater than 0.99.

• 한국포장학회지
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• 제6권1호
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• pp.31-36
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• 2000

10개월 숙성된 전통 된장과 고추장을 232 mL의 유리병 용기에 포장조건을 다르게 하여 각각 180g과 150g씩 포장하고, $13^{\circ}C$에서 저장하면서 포장내의 기체조성, 색택, 총산, pH 등의 품질변화를 측정하였다. 포장 처리구로서는 핀홀을 장착시켜서 통기성을 준 경우와 $CO_2$ 흡수제로서 $Ca(OH)_2$를 장착시킨 경우에 대하여 실험하였다. 된장과 고추장 모두에서 대조구 밀봉포장은 저장중 높은 $CO_2$ 분압의 증가를 일으키고 $O_2$ 분압의 감소소멸를 나타내나, 질소분압은 비교적 일정한 수준에서 유지하여 높은 압력을 발생시켰다. 반면에 $Ca(OH)_2$ 함유포장에서는 저장 70일 부근까지 비교적 낮은 $CO_2$ 분압를 유지하여서 큰 압력 발생 없이 저장이 가능하였다. 핀흘을 장착시킨 통기성 포장에서는 $O_2$ 분압과 $N_2$ 분압이 감소하고 $CO_2$ 분압은 계속 상승한 후, 완만히 감소하였다. 이러한 포장내의 기체조성의 변화는 장류의 품질변화에 영향을 미쳐서 핀홀을 가진 포장에서 그 변화의 정도가 상대적으로 약간 작았으나, 된장 포장의 경우 저장 120일 이후에 곰팡이 오염과 성장의 문제점을 가지고 있었다. 저장 70 여일 후에 측정한 미생물 군집의 변화에서는 포장간에 뚜렷한 차이를 발견할 수 없었다. 핀홀 포장은 저장 전기간동안 포장내에 압력 발생 없이 낮은 $O_2$ 농도와 높은 $CO_2$ 농도를 유지하여 상대적으로 작은 품질변화를 얻을 수 있는 것으로 평가되나 냄새유출과 외부로부터의 오염 문제의 해결을 필요로 한다.

• 한국진공학회지
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• 제8권3B호
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• pp.333-339
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• 1999

$RuO_2$ thin films were prepared with various deposition conditions by rf magnetron sputtering. The films were annealed in vacuum, air, and air-vacuum, after that, the structural and electrical properties of the films were investigated. As the substrate temperature increases, the preferred orientation of the films changes from (101) to (200), and the grain size increases; especially, at $500^{\circ}C$, the size considerably increases. The preferred orientation of the films changes from (200) to (101) and the roughness of surface increase with the increase in oxygen partial pressure. The lowest value of resistivity of $RuO_2$ we prepared is $1.5\times 10^{-5}\Omega\codt\textrm{cm}$ at the conditions of $400^{\circ}C$ and 10% of oxygen partial pressure. After the processes of annealing, the films deposited at $400^{\circ}C$ and a oxygen partial pressure of 10% were relatively stable. The films deposited at $500^{\circ}C$ have denser structure and smoother surface when the films are annealed in vacuum after annealing in air.

• 한국초전도학회:학술대회논문집
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• 한국초전도학회 1999년도 High Temperature Superconductivity Vol.IX
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• pp.326-328
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• 1999

We investigated the effects of residual gas partial pressure on the property of a CeO$_2$ buffer layer on a textured Ni tape, where the buffer layer was deposited by e-beam evaporation. The oxygen partial pressure were varied from 10$^{-7}$ to 10$^{-4}$ Torr. we also changed the surface condition for the surface oxygenation. We'll describe the detail of the resultant textures of the buffer layers and effects of YBCO growth on them

• 한국표면공학회지
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• 제45권5호
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• pp.206-211
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• 2012

Process analysis was carried out during deposition of MgO by inductively coupled plasma assisted reactive magnetron sputtering in Ar and $O_2$ ambient. At the initiation of Mg sputtering with bipolar pulsed dc power in Ar ambient, total pressure showed sharp increase and then slow fall. To analyse partial pressure change, QMS was used in downstream region, where the total pressure was maintained as low as $10^{-5}$ Torr during plasma processing, good for ion source and quadrupole operation. At base pressure, the major impurity was $H_2O$ and the second major impurity was $CO/N_2$ about 10%. During sputtering of Mg in Ar, $H_2$ soared up to 10.7% of Ar and remained as the major impurity during all the later process time. When $O_2$ was mixed with Ar, the partial pressure of Ar decreased in proportion to $O_2$ flow rate and that of $H_2$ dropped down to 2%. It was understood as Mg target surface was oxidized to stop $H_2$ emission by Ar ion sputtering. With ICP turned on, the major impurity $H_2$ was converted into $H_2O$ consuming $O_2$ and C was also oxidized to evolve CO and $CO_2$.

• 한국분말재료학회지
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• 제31권2호
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• pp.163-168
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• 2024

As the demand for lithium-ion batteries for electric vehicles is increasing, it is important to recover valuable metals from waste lithium-ion batteries. In this study, the effects of gas flow rate and hydrogen partial pressure on hydrogen reduction of NCM-based lithium-ion battery cathode materials were investigated. As the gas flow rate and hydrogen partial pressure increased, the weight loss rate increased significantly from the beginning of the reaction due to the reduction of NiO and CoO by hydrogen. At 700 ℃ and hydrogen partial pressure above 0.5 atm, Ni and Li₂O were produced by hydrogen reduction. From the reduction product and Li recovery rate, the hydrogen reduction of NCM-based cathode materials was significantly affected by hydrogen partial pressure. The Li compounds recovered from the solution after water leaching of the reduction products were LiOH, LiOH·H₂O, and Li₂CO₃, with about 0.02 wt% Al as an impurity.

• The Korean Journal of Ceramics
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• 제5권3호
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• pp.288-295
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• 1999

Partial conductivities contributed by electron holes, oxygen ions, and protons were caluclated in $SrZr_{0.95}Y_{0.05}O_{2.975}$, using the reported formulae derived from the defect chemistry of HTPCs. Required parameters were obtained from the graphical analysis of total conductivity variation against partial pressure of water vapor and oxygen. Predicted overall conductivities showed a reasonable agreement with experimental measurements. The conductivity of the material showed a linear increase with square root of the water vapor pressure. This increase was due to proton conduction in an almost pure ionic conductivity. The calculation of partial conductivities at $800^{\circ}C$ resulted in an almost pure ionic conductivity at $P_{02}=10^{-10}$ atm and a predominant hole conductivity at $P_{02}=10^{-10}$ atm. Pure proton conduction was not expected at this temperature, contrary to the earlier reports. Discussions were made in relation with reported thermodynamic data and defect structure of the material. It was shown that from the total conductivity dependence on water vapor pressure, the pure ionic conductivity at low oxygen partial pressures could be separated into protonic and oxygen ionic conductivity in $ZrO_2$-based HTPCs.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2007년도 Techno-Fair 및 추계학술대회 논문집 전기물성,응용부문
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• pp.88-89
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• 2007

ZnO thin films were deposited on $Al_2O_3$ (alumina) substrates by pulsed laser deposition (PLD) using Nd:YAG laser with a wavelength of 355nm, at room temperature and oxygen partial pressure of 1, 10, 30, 50, 100, and 200m Torr. Furthermore, deposited ZnO thin films were post-annealed at 400, 550, $600^{\circ}C$. The effects of oxygen partial pressure and post-annealing temperature on structural properties of the deposited films have been investigated by means of X-ray diffraction (XRD), and atomic force microscope (AFM), respectively. It has been found that ZnO thin films exhibit c-axis orientation, exhibiting an increased foil width at half maximum (FWHM) value of (002) diffraction peak at 30m Torr oxygen partial pressure and higher post-annealing temperature ($700^{\circ}C$).