• Korean Journal of Materials Research
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• v.18 no.3
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• pp.123-127
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• 2008

The production of tin oxide ($SnO_2$) microrods on iridium (Ir)-coated substrates was achieved through the thermal evaporation of Sn powders in which a sufficiently high $O_2$ partial pressure was employed. Scanning electron microscopy revealed that the product consisted of microrods with diameters that ranged from 0.9 to $40\;{\mu}m$. X-ray diffraction, high-resolution transmission electron microscopy, and selected area electron diffraction indicated that the microrods were $SnO_2$ with a rutile structure. As the microrod tips were free of metal particles, it was determined that the growth of $SnO_2$ microrods via the present route was dominated by a vapor-solid mechanism. The thickening of rod-like structures was related to the utilization of sufficiently high $O_2$ partial pressure during the synthesis process, whereas low $O_2$ partial pressure facilitated the production of thin rods.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.85-88
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• 2001

The NdBaCuO superconductor samples were Zone-melted in low oxygen partial pressure (1% $O_{2}+ 99% Ar$ ). The Zone-melting temperature was decreased about $120^{\circ}C$ from $1060^{\circ}C$ the zone-melting temperature in air. Thus the loss of liquid phase ($BaCuO_{2}$ and CuO) was reduced during the zone-melting process. The content of non-superconducting phase Nd422 in zone-melted NdBaCuO samples was clearly decreased, so was the substitution of Nd for Ba. The superconductivity of zone-melted $Nd_{1+x}Ba_{2-x}Cu_{3}O_{y}$ prepared under low oxygen partial pressure was distinctively improved.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.85-88
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• 2001

The NdBaCuO superconductor samples were Zone-melted in low oxygen partial pressure (1% O$_2$+99% Ar). The Zone-melting temperature was decreased about 120$^{\circ}C$ from 1060$^{\circ}C$ the zone-melting temperature in air. Thus the loss of liquid phase (BaCuO$_2$ and CuO) was reduced during the zone-melting process. The content of non-superconducting phase Nd422 in zone-melted NdBaCuO samples was clearly decreased, so was the substitution of Nd for Ba. The superconductivity of zone-melted Nd$\sub$1+x/Ba$\sub$2-x/Cu$_3$O$\sub$y/ prepared under low oxygen partial pressure was distinctively improved.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.12
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• pp.1008-1015
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• 2001

Thin films of vanadium oxide(VO$\_$x/) have been deposited by r.f. magnetron sputtering from V$_2$O$\_$5/ target in gas mixture of argon and oxygen. The oxygen/(oxygen+argon) partial pressure ratio is changed from 0% to 8%. Crystal structure, chemical composition, bonding, optical and electrical properties of films sputter-deposited under different oxygen gas pressures are characterized through XPS, AES, RBS, FTIR, optical absorption and electrical conductivity measurements. V$_2$O$\_$5/ and lower oxides co-exist in sputter-deposited films and as the oxygen partial pressure is increased the films become more stoichiometric V$_2$O$\_$5/. The increase of O/V ratio with increasing oxygen gas pressure is attributed to the partial filling of oxygen vacancies through diffusion. It is observed that the oxygen atoms located on the V-O plane of V$_2$O$\_$5/ layer participate more readily in the oxidation process. With increasing oxygen gas pressure indirect and direct optical band gaps are increased, but thermal activation energies are decreased.

• Journal of the Korean institute of surface engineering
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• v.39 no.6
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• pp.250-254
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• 2006

Effect of hydrogen partial pressure ratio on the structural and electrical properties of highly c-axis oriented ZnO films deposited by oxygen ion-assisted pulsed filtered vacuum arc at a room temperature was investigated. The hydrogen partial pressure ratio were $1.4%\sim9.8%$ at 40% oxygen pressure ratio. The conductivity of ZnO:H films was increased from 1.4% up to 4.2% due to relatively high carrier mobility caused by improvement of crystallinity While the conductivity of ZnO:H films were decreased over than 4.2% and (0002) orientation was also deteriorated. The lowest resistivity of ZnO:H films was $2.5{\times}10^{-3}\;{\Omega}{\cdot}cm$ at 4.2% of hydrogen pressure ratio. Transmittance of ZnO:H films in visible range was 85% which is lower than that of undoped ZnO films because of declined preferred orientation.

• 한국신재생에너지학회:학술대회논문집
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• 2010.11a
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• pp.57.1-57.1
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• 2010

ITO(Indium Tin Oxide)는 전도도와 투과도 특성이 뛰어나 디스플레이, 태양전지, LED 등 여러 산업에서 전극 물질로 널리 사용 되어져 왔다. 최근 ITO의 사용이 급격히 증가하면서 이에 대한 연구가 활발히 진행되고 있다. ITO는 막의 특성을 좋게 하기 위하여 증착 시 Ar gas와 함께 $O_2$가스를 첨가하기도 한다. 본 연구에서는 산소 분압에 따른 ITO 박막의 전기적, 광학적 특성에 대하여 연구하였다. Corning사의 eagle 2000 glass 기판위에 스퍼터링을 이용하여 ITO layer를 증측하였고, 증착시, $O_2$ partial pressure를 0 - 0.5%까지 0.1% 간격으로 가변하였다. 증착된 샘플은 Sinton사의 UV-vis 장비를 이용하여 광학적 특성을 측정하였고, Hall measurement 장비를 이용하여 전기적 특성을 측정하였다. ITO 박막은 $O_2$의 partial pressure가 증가할수록 향상된 전기적, 광학적 특성을 나타내었다.

• Journal of the Korean Magnetics Society
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• v.7 no.5
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• pp.243-248
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• 1997

The effect of $O_2$ partial pressure on microstructure and soft magnetic properties of as-deposited Fe-Hf-O thin film alloys, which are produced by rf magnetron sputtering method in $Ar+O_2$ mixed gas atmosphere, are investigated. Saturation magnetization ($4{\pi}M_s$) of Fe-Hf-O film were decreased with increasing $O_2$ partial pressure, the best soft magnetic properties exhibit at $O_2$ partial pressure of 10%. With further increase of $O_2$ partial pressure, soft magnetic properties decreased continuously. The $Fe_{82}Hf_{3.4}O_{14.6}$ film with $P_{O2}=10%$ exhibits good soft magnetic properties with $4{\pi}M_s=17.7kG$, $H_c=0.7Oe$ and ${\mu}_ {eff}$ (1~100 MHz)=2,500, respectively. The addition of O is effective in grain refinement. In case of $P_{O2}=15%$, it is observed that $Fe_3O_4$ compound is formed and high frequency soft magnetic properties are decrease. The electrical resistvity($\rho$) of Fe-Hf-O film is increased with increasing $O_2$ partial pressure. Electrical resistivity of $Fe_{82}Hf_{3.4}O_{14.6}$ film was 5 times higher than that of the film without oxygen. Thus, it is considered that the good magnetic properties of $Fe_{82}Hf_{3.4}O_{14.6}$ film results from decreasing the $\alpha$-Fe grain size by precipitates (Hf and O), high electrical resistivity.

• Korean Journal of Materials Research
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• v.11 no.9
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• pp.751-758
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• 2001

Anatase $TiO_2$ thin films as a photocatalyst were prepared by the D.C reactive magnetron sputtering process. The $TiO_2$ thin films were deposited on Si(100) substrates under the various conditions : oxygen partial pressure, working pressure, substrate temperature, D.C power, and deposition time. The morphology of the TiO$_2$ thin films showed an island structure. At early stages of film growth, amorphous phase formed. However, during the further growth, columnar crystalline $TiO_2$grains evolved. The crystallinity of the thin films depended on the oxygen partial pressure, the working pressure and the D.C. powers.

• Korean Journal of Materials Research
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• v.10 no.11
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• pp.755-759
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• 2000

The influence of $O_2$partial presure on saturation magnetization, coercivity and effective permeability(0.5~100MHz) of as-deposited Fe-Sm-O thin films, which were fabricated by RF magnetron reactive sputtering method, were investigated. The nanocrystalline Fe(sub)83.4Sm(sub)3.4O(sub)13.2 thin film fabricated at $O_2$partial pressure of 5% exhibits the best magnetic softness with saturation magnetization of 18kG, coercivity of 0.82 Oe and effective permeability about 2,600 at 0.5~100MHz. $\alpha$-Fe grain size is decreased with increasing $O_2$partial pressure. In case of $O_2$partial pressure of 10%, it is observed that FeO compound is formed and soft magnetic properties are decreased. The electrical resistivity of Fe-Sm-O thin films were increased with increasing $O_2$partial pressure, the electrical resistivity of Fe(sub)83.4Sm(sub)3.4O(sub)13.2 thin film with the best soft magnetic properties was 130 $\mu$$\Omega$cm. Therefore, It is assumed that the good soft magnetic properties of Fe(sub)83.4Sm(sub)3.4O(sub)13.2 thin film results from high electrical resistivity and decreasing $\alpha$-Fe grain size due to precipitation of Sm-Oxide phase.

• Bulletin of the Korean Chemical Society
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• v.29 no.2
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• pp.427-430
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• 2008

BaTiO3 and SrTiO3 thin films were fabricated on Pt/Ti/SiO2/Si substrate by the pulsed laser deposition process. The dependence of the deposited film quality upon the partial oxygen pressure during the deposition process was importantly examined. Regardless of the oxygen pressure, the as-deposited films were not fully crystallized. However, the film deposited at low oxygen pressure became well crystallized after the annealing process. It was concluded, therefore, that the partial oxygen pressure is reduced as low as possible during the deposition process and then anneal the as-deposited samples at ambient pressure to fabricate the well crystallized SrTiO3 and BaTiO3 films by laser ablation.