• Journal of the Korea Academia-Industrial cooperation Society
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• v.14 no.2
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• pp.535-541
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• 2013

The present study was carried out to investigate the effects of welding parameters such as current, voltage and shielding gases on the bead shape, microstructures and hardness. It was confirmed that bead height was lowered and bead depth was increased with increasing voltages while height, depth and width of beads increased with welding currents. The hardness of weld metals with Ar+10% $O_2$ and Ar+20% $CO_2$ was low due to the formation of grain boundary and polygonal ferrites while that of weld metals with Ar+2% $O_2$ was high due to the presence of acicular, bainitic and sideplate ferrites.

• Journal of the Korean Society for Heat Treatment
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• v.25 no.6
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• pp.279-282
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• 2012

$SnO_2$ thin films were prepared on the Si substrate by radio frequency (RF) magnetron sputtering and then surface of the films were irradiated with intense Ar ion beam to investigate the effect of Ar ion irradiation on the properties and hydrogen gas sensitivity of the films. From atomic force microscope observation, it is supposed that intense Ar bombardments promote rough surface and increase gas sensitivity of $SnO_2$ films for hydrogen gas. The films that Ar ion beam irradiated at 6 keV show the higher sensitivity than the films were irradiated at 3 keV and 9 keV. These results suggest that the $SnO_2$ thin films irradiated with optimized Ar ion beam are promising for practical high-performance hydrogen gas sensors.

• Journal of the Korean Vacuum Society
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• v.17 no.5
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• pp.426-434
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• 2008

A space averaged $SiH_4/O_2/Ar$ simulator for the high density inductively coupled plasma sources for $SiH_4/O_2/Ar$ discharge is developed. The developed simulator uses space averaged fluid equations for electrons, positive ions, negative ions, neutral species, and radicals in $SiH_4/O_2/Ar$ plasma discharge, and the electron heating model including the anomalous skin effect. Using the developed simulator, the dependency of the density of charged particles, neutral particles, and radicals, the electron temperature, the plasma resistance, and the power absorption coefficient for the RF power and pressure is calculated.

• Journal of the Korean Vacuum Society
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• v.13 no.4
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• pp.139-144
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• 2004

Recently, the importance of clean vacuum and partial pressure measurement of gas species has been increased in the vaccum process. In this study, the partial pressures of $H_2$, He, C, N, $O_2$, $H_2O $, Ar/2, $N_2$(CO), Ar, $CO_2$ were measured by residual gas analyzer according to temperature of cryogenic pump which is used to clean vacuum generation and compared. The experimental results showed that the cryopanel temperature was reached to 12K after 72 minutes of pumping and after 25hours, the partial pressures in percent were 24.9 %, 6.6%, 5.5 %, 2.2 %, 3.8%, 30.7%, 6.5%, 6.1 %, 5.5%, 8.2% for $H_2$, He, C, N, $O_2$, $H_2O $, Ar/2, $N_2$, Ar, $CO_2$ respectively. The dominant gases were $H_2$ and $H_2O $, and the partial pressures were relatively high compare to other gases.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.202-202
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• 2012

염료감응태양전지(DSSC)의 광변환 효율을 향상시키기 위하여 진공챔버에서 450도 고온에서 O2, Ar, and N2 혼합가스를 주입하여 다양한 plasma로 TiO2 박막을 처리하면서 소성시켰다. TiO2 표면을 cleaning하고 활성화함으로서 염료의 결합력을 향상시키는 것 외에 TiO2 내부의 oxygen vacancy를 변화를 관찰하였다. 실험에 사용한 박막은 glass 위에 FTO 박막을 입히고, 다공성 TiO2 나노입자 박막을 코팅하여 제조하였다(porous TiO2 나노입자(${\sim}12{\mu}m$)/FTO(Fluorine doped Tin oxide; $1{\mu}m$)/glass). 완성된 광전극에 대해서 XRD, XPS, EIS, FE-SEM 등을 이용하여 분석하였다. 또한 이렇게 전처리된 광전극을 사용한 DSSC를 제작하였다. 그리고 Solar-simulator를 통해 그 효율을 측정하여 '플라즈마환경에서 소성된 광전극에 대한 DSSC의 광변환효율에 미치는 효과'을 고찰하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.175-175
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• 2010

The etching characteristics with etch rate of ITO thin films in an $O_2/BCl_3$/Ar plasma were investigated. The etch rate of ITO thin films increased with increasing $O_2$ content from 0 to 10 % in $BCl_3$/Ar plasma, whereas that of ITO decreased with increasing $O_2$ content from 10 % to 30 % in $BCl_3$/Ar plasma. The maximum etch rate of 65.9 nm/min for the ITO thin films was obtained at 10 % $O_2$ addition. The etch conditions were the RF power of 500 W, bias power of 200 W, and process pressure of 2 Pa. The analysis of x-ray photoelectron spectroscopy (XPS) was carried out to investigate the chemical reactions between the surfaces of ITO thin films and etch species.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.593-596
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• 1999

This paper presents a process optimization of antireflectiun (AR) coating on crystalline Si solar cells. Theoretical and experimental investigations were performed on a doble-layer AR(DLAR) coating of MgF$_2$/CeO$_2$, We investigated CeO$_2$ films as an All layer because they hale a proper refractive index of 2.46 and demonstrate the same lattice constant as Si substrate. RF sputter grown CeO$_2$ film showed strong dependence on a deposition temperature. The CeO$_2$ film deposited at 400 $^{\circ}C$ exhibited a strong (111) preferred orientation and the lowest surface roughness of 6.87 $\AA$. Refractive index of MgF$_2$ film was measured as 1.386 for the most of growth temperature. An optimized DLAR coating showed a reflectance as low as 2.04 % in the wavelengths ranged from 0.4 7m to 1.1 7m. We achieved the efficiencies of solar cells greater than 15% with 3.12 % improvement with DLAR coatings . Further details on MgF$_2$, CeO$_2$ films, and cell fabrication Parameters are presented in this paper.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2009.05a
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• pp.252-253
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• 2009

In this study, the deformation and etch characteristics of ArF and EUV photoresists were compared in a dual frequency superimposed capacitively coupled plasma (DFS-CCP) etcher systems using $CF_{4}/O_{2}/Ar$ and $CF_{4}/CHF_{3}/O_{2}/Ar$ mixture gas chemistry which are typically used for BARC open and $Si_{3}N_{4}$ teching chemistry, respectively. Etch rate of the resists tend to increase with low-frequency source power ($P_{LF}$) and high-frequency source ($f_{HF}$). The etch rate of ArF resist was hgither than that of EUV resist.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.244-244
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• 1999

Liquid Crystal Displays(LCDs) 투명성 전도막으로 사용하는 Indium Tin Oxide (ITO)의 고밀도 식각특성을 조사하였다. 특히 ITO식각의 경우, pixel electrode 전극에서 사용되는 underlayer인 SiO2, Si3N4와의 최적의 선택비를 얻는데 중점을 두고 있다. 따라서 본 실험에서는 Inductively Coupled Plasma(ICP)를 이용하여 source power, gas combination, bias voltage, pressure 및 기판온도에 따른 ITO의 식각 특성과 이의 underlayer인 SiO2, Si3N4와의 선택비를 조사하였다. Ar과 CH4를 주된 식각가스로서 사용하였으며 첨가가스로는 O2와 HBr를 사용하였다. ITO의 식각특성을 이해하기 위하여 Quadruple Mass Spectrometry(QMS), Optical emission spectroscopy(OES) 이용하였으며, 식각된 sample의 잔류물을 조사하기 위하여 X-ray photoelectron spectroscopy(XPS)를 이용하여 분석하였다. Ar gas에 적정량의 CH4 혼합이 순수한 Ar 가스로 식각한 경우에 비하여 ITO와 SiO2, Si3N4의 선택비가 높았으며, 더 높은 식각 선택비를 얻기 위하여 Ar/CH 분위기에서 첨가가스 O2, HBr을 사용하였다. Source power 및 bias 증가에 따라 ITO의 식각률은 증가하나, underlayer와의 선택비는 감소함을 보였다. 본 실험에서 측정된 ITO의 high 식각률은 약 1500$\AA$/min이며, SiO2, Si3N4와의 high selectivity는 각각 7:1, 12:1로 나타났다. ITO의 etchrate 및 선택비는 source power, bias, pressure, CH 가스첨가에 의존하였지만 기판온도에는 큰 변화가 없음을 관찰하였다. 또한 적정량의 가스조합으로 식각된 시편의 잔류물을 줄일 수 있었다.

• JSTS:Journal of Semiconductor Technology and Science
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• v.17 no.4
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• pp.483-491
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• 2017

The interdigitated germanium (Ge) meta-lsemiconductor-metal (MSM) photodetectors (PDs) with and without an $SiO_2$ anti-reflection (AR) layer was fabricated, and the effect of $SiO_2$ AR layer on their optoelectronic response properties were investigated in detail. The lowest reflectance of 15.6% at the wavelength of 1550 nm was obtained with a $SiO_2$ AR layer with a thickness of 260 nm, which was in a good agreement with theoretically calculated film thickness for minimizing the reflection of Ge surface. The Ge MSM PD with 260 nm-thick $SiO_2$ AR layer exhibited enhanced device performance with the maximum values of responsivity of 0.65 A/W, the quantum efficiency of 52.2%, and the detectivity of $2.49{\times}10^9cm\;Hz^{0.5}W^{-1}$ under the light illumination with a wavelength of 1550 nm. Moreover, time-dependent switching analysis of Ge MSM PD with 260 nm- thick $SiO_2$ AR layer showed highest on/off ratio with excellent stability and reproducibility. All this investigation implies that 260 nm-thick $SiO_2$ AR layer, which is effective in the reduction in the reflection of Ge surface, has a great potential for Ge based optoelectronic devices.