• E2M - 전기 전자와 첨단 소재
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• 제10권8호
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• pp.819-829
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• 1997

The microwave dielectric materials of the BaO-Nd$_2$O$_3$-TiO$_2$and BaO-(Sm, Nd)$_2$O$_3$-TiO$_2$system were synthesized by conventional ceramic processing and sintered 1220 to 140$0^{\circ}C$ for 2 hours respectively. Their crystallization and dielectric properties were examined. In the BaO-Nd$_2$O$_3$-TiO$_2$ and BaO-(Sm, Nd)$_2$O$_3$-TiO$_2$system. Nd$_2$Ti$_2$O$_{7}$ and (Sm, Nd)$_2$Ti$_2$O$_{7}$ were observed as a second phase respectively. The maximum relative dielectric constant were 79,99 for the BaO-Nd$_2$O$_3$-TiO$_2$system and 105.07 for the BaO-(Sm,Nd)$_2$O$_3$-TiO$_2$system and their Q-value were over 2000 at 3GHz.GHz.

• ETRI Journal
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• 제18권1호
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• pp.15-27
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• 1996

The effects of $Nd_2O_3$ and $TiO_2$ addition on the microstructures and microwave dielectic properties of $BaO-Nd_2O_3-TiO_2$ system were investigated. $BaNd_2Ti_4O_{12}$ or $BaNd_2Ti_{5}O_{14}$ phases were observed for compositions based on BaO/$Nd_2O_3$ = 1 ratio. The compositions deviated from $BaO/Nd_2O_3=1$ ratio were composed of major phases of $BaNd_2Ti_4O_{12}$ or $BaNd_2Ti_5O_{14}$, and the compound of $Nd_2O_3$ and $TiO_2(Nd_2Ti_2O_7)$ or that of BaO and $TiO_2(BaTi_4O_9)$. The microstructure of ceramic with $BaO{\cdot}Nd_2O_3{\cdot}4TiO_2$ composition varied from spherical grains to needlelike grains with increasing sintering temperature. With increasing $Nd_2O_3$, the optimum sintering temperature with maximum density increased, and the dielectric constant(${\varepsilon}_r$) and quality factor(Q) decreased due to the formation of secondary phases. With increasing $TiO_2$, the optimum sintering temperature and the dielectric constant decreased with increased Q value. And the temperature coefficient of resonant frequency, ${\tau}_f$ shifted toward positive direction. The dielectric ceramics with $BaO/Nd_2O_3=1$ showed Q values of above 2000 and dielectric constants of above 80 at 3GHz.

• 한국세라믹학회지
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• 제39권10호
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• pp.977-980
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• 2002

Micro-pulling down법을 이용하여 $Nd_2O_3$가 첨가된 crack 등의 결함이 없는 화학양론조성의 $LiNbO_3$ 단결정을 직경 1 mm, 길이 30∼35 mm의 크기로 성장시켰다. Electron probe micro analysis를 이용하여 결정 내에 $Nd_2O_3$가 균일하게 분포되어있음을 확인하였다. 성장된 결정의 $Nd_2O_3$ 첨가에 따른 흡수 band를 관찰하였고 $Nd_2O_3$ 첨가량 변화에 따른 형광특성의 변화를 측정하였다.

• 한국세라믹학회지
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• 제31권9호
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• pp.995-1004
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• 1994

Phase relation and microwave dielectric properties of the system BaO.(Nd1-xSmx)2O3.TiO2 (n=4, 5) were studied. With n=5 (1 : 1 : 5), Ba2Ti9O20 and TiO2 formed in case of X$\leq$0.7, and Ba2Ti9O20 and Sm2Ti2O7 formed at X=1.0 as the second phases dispersed in fine-grained orthorhombic matrix phase. With n=4 (1 : 1 : 4). on the contrary, only fine grains of an ortho-rhombic phase were observed irrespective of Nd/Sm ratio. The compositions of these two stable orthorombic phases having distinct lattic constants even with the same Nd/Sm ratio were estimated as 4BaO.5(Nd1-xSmx)2O3.18TiO2 and BaO.(Nd1-xSmx)2O3.4TiO2 with n=5 and n=4 in the system BaO.(Nd1-xSmx)2O3.TiO2, respectively. Consequently the composition BaO.(Nd1-xSmx)2O3.5TiO2 lies in the compatible triangle of 4BaO.5(Nd1-xSmx)2O3.18TiO2 and the second phases mentioned above. The microwave dielectric properties (~4 GHz) of BaO.(Nd1-xSmx)2O3.5TiO2 can be controlled effectively by adjusting Sm content : with increasing X from 0 to 0.7, both dielectric constant and the temperature coefficient of resonant frequency decreased monotonically from 82 to 65 and from 91 (ppm/$^{\circ}C$) to -19(ppm/$^{\circ}C$), respectively, while unloaded Q(Qo) remained constant at about 2,600.

• 한국세라믹학회지
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• 제39권1호
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• pp.26-32
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• 2002

유전율(${\varepsilon}_r$) 126, $Q{\cdot}f_{0}(GHz)$값은 2240, 공진주파수의 온도계수(${\tau}_f$) $+68\;ppm/^{\circ}C$의 특성을 갖는 $0.3CaTiO_3-0.7(Li_{1/2}Nd_{1/2})TiO_3에\;Nd_2O_3$를 첨가하였을 때의 마이크로파 유전특성의 변화에 대해 고찰하였다. 유전율(${\varepsilon}_r$)은 5wt% $Nd_2O_3$ 첨가시 131로 가장높은 값을 나타내었으며, 이후 첨가량이 증가함에 따라 유전율은 감소함을 보였다. $Q{\cdot}f_{0}(GHz)$값은 9wt% $Nd_2O_3$ 첨가시까지 입계의 치밀화 등에 의해 3533까지 증가하다가 이후 l8wt% $Nd_2O_3$첨가시까지는 비정상적 입계성장의 영향으로 감소함을 보이고, 25 wt% 이상 첨가시에는 제2상인 $Nd_2Ti_2O_7$상의 영향으로 다시 증가함을 보였다. 공진주파수의 온도계수($({\tau}_f$)는 $Nd_2O_3$첨가에 따라 최초의 $+68\;ppm/^{\circ}C$에서 30wt% $Nd_2O_3$ 첨가시 $-46\;ppm/^{\circ}C$까지 변화함을 알 수 있었다. $0.3CaTiO_3-0.7(Li_{1/2}Nd_{1/2})TiO_3에\;Nd_2O_3$를 9wt% 첨가하여 $1425^{\circ}C$에서 3시간동안 소결한 시편에서 유전율(${\varepsilon}_r$)은 108, $Q{\cdot}f_{0}(GHz)$값은 3533, 공진주파수의 온도계수(${\varepsilon}_f$)가 $+6\;ppm/^{\circ}C$인 우수한 마이크로파 유전특성을 얻을 수 있었다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1994년도 하계학술대회 논문집 C
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• pp.1254-1256
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• 1994

0.15$(Ba_{0.95}Sr_{0.05})$O-0.15$(Sm_{2(1-x)}Nd-{2x})O_3-0.7TiO_2 (x=0{\sim}10[m/o])$ ceramics were fabricated by mixed-oxide method. Microwave dielectric properties was investigated with the contents of $Nd_2O_3$. Increasing the contents of $Nd_2O_3$ from 0 to 6[m/o], sintered density was increased 5.53 to $5.68[g/ cm^3]$. In the specimen with contents of $Nd_2O_3$(6[m/o]), dielectric content was maximum value of 78.14 and decreased with increasing the contents of $Nd_2O_3$. Quality factor was increased with the contents of $Nd_2O_3$.

• 한국재료학회지
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• 제8권7호
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• pp.659-663
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• 1998

BaO.$Nd_{2}O_{3}$.$4TiO_{2}$세라믹스에서 Bi 치환위치 및 Bi 치환 량에 따른 상, 미세구조, 마이크로파 유전특성 등을 조사하였다. BaO.$Nd_{2}O_{3}$.$4TiO_{2}$ 세라믹스의 Nd 치환되어 $BaO.(Nd_{1-x}Bi_x)_2O_3.4TiO_2$고용체 (0$\leq$x$\leq$0.2)를 형성하였다. $BaO.(Nd_{1-x}Bi_x)_2O_3.4TiO_2$에서 Bi 치환 량이 x=0에서 x=0.2까지 증가됨에 따라 입자크기가 계속 증가하였으며, 유전상수는 84에서 108까지 계속 증가하였고, 공진 주파수의 온도계수는 $44 ppm^{\circ}C$에서 $-30ppm^{\circ}C$로 계속 감소하였다. $BaO.(Nd_{1-x}Bi_x)_2O_3.4TiO_2$조성에서 Bi 치환 량이 x=0.04에서 0.08사이일 때 가장 양호한 마이크로파 유전특성이 얻어졌으며 이 때의 유전상수 (${\varepsilon}_r$)는 89~92, Q, f는 5855-6091 GHz, 그리고 공진 주파수의 온도계수 (${\tau}_f$)는 -7.7-7.5 ppm/$^{\circ}C$이었다.

• 공업화학
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• 제24권3호
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• pp.227-230
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• 2013

$(U_{1-x}Nd_x)O_2$ 소결체를 $500^{\circ}C$에서 산화하여 얻은 $(U_{1-x}Ndx)_3O_8$ 분말의 상변화를 $900{\sim}1500^{\circ}C$의 공기 중에서 고온 산화 열처리를 하여 조사하였다. $1100^{\circ}C$ 이상의 온도로 산화 열처리할 경우에 Nd 농도가 높은 $(U_{1-y}Nd_y)O_{2+z}$ 상과 $U_3O_8$ 상이 생성됨을 확인하였으며, 산화 열처리 온도가 높아질수록 $(U_{1-y}Nd_y)O_{2+z}$ 상에서의 Nd 농도는 감소하였다. 산화 열처리 온도의 증가에 따라서 $U_3O_{8-w}$ 입자로부터 $(U_{1-y}Nd_y)O_{2+z}$ 입자로의 U 양이온 및 Nd 양이온이 두 입자의 계면을 통해 농도 구배에 따른 확산에 의해서 $(U_{1-y}Nd_y)O_{2+z}$ 상 내에 U의 농도는 증가하고 Nd의 농도는 감소하게 된다. 이러한 현상은 산화 열처리 온도증가에 따라서 $U_3O_8$ 상에 대한 $(U_{1-y}Nd_y)O_{2+z}$ 상의 X-선 회절피크의 적분강도비 증가와 $(U_{1-y}Nd_y)O_{2+z}$ 상의 입자가 커지는 것과 연관하여 해석할 수 있었다.

• 한국세라믹학회지
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• 제35권8호
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• pp.775-782
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• 1998

This experiment is third study concerning BaO-{{{{ { { Pr}_{ 2} O}_{3 } }}-{{{{ { TiO}_{2 } }} (Ln=Sm, Nd, Pr, La..) system which is known to show a high dielectric constant and Q value in microwave dielectric materials. The process of cry-stallization and the microwave dielectric properties of the specimens sintered at 1220-140$0^{\circ}C$ for 2 hr was investigated in the BaO-(Na,{{{{ { { Pr})_{2 }O }_{3 } }}-{{{{ { TiO}_{2 } }} as well as BaO-{{{{ { { Pr}_{ 2} O}_{3 } }}-{{{{ { TiO}_{2 } }} system. The single phase BaPr2Ti5O14 and Ba(Nd,{{{{ { { Pr})_{2 }O }_{3 } }}Ti5O14 was finally formed from the Pr2Ti2O7 (Nd, Pr)2Ti2O7 as a secondary phase in the BaO-{{{{ { { Pr}_{ 2} O}_{3 } }}-{{{{ { TiO}_{2 } }} and BaO-(Nd, {{{{ { { Pr})_{2 }O }_{3 } }}-{{{{ { TiO}_{2 } }} system respectively The dielectric constant of the specimens sint-ered at 1280~131$0^{\circ}C$ showed the maximum value as 105(BaO-{{{{ { { Pr}_{ 2} O}_{3 } }}-{{{{ { TiO}_{2 } }} system) and 88 (BaO-(Nd,{{{{ { { Pr})_{2 }O }_{3 } }}-{{{{ { TiO}_{2 } }} system) and the Q values of them showed higher value than 1800 which are due to the maximum den-sity. However the dielectric properties of the specimens sintered at higher temperature than 131$0^{\circ}C$ were reduced due to the increases of pore which were resulted from the sudden grain growth.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
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• pp.603-606
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• 2004

ZnO varistor ceramics were fabricated with variation of addition of $Nd_2O_3$ amount and the sintering temperature was $l150^{/circ}C$. The average grain sizes were showed decreased from $13.8{\mu}m$ to $4.7{\mu}m$, and varistor voltages were increased from 398 V to 657 V by added amount of $Nd_2O_3$. Nonlinear coefficient a of all were with increasing the amount of $Nd_2O_3$ more than 60, in case of added on 0.1mol% $Nd_2O_3$ was 87. And leakage current were less than $1_{\mu}A$ with applied at 82% of varistor voltage. The clamping voltage ratio of the specimes added 0.1mol% $Nd_2O_3$ was 1.38 at applied 25A [$8/20{\mu}s$]. In the specimen added 0.1mol% $Nd_2O_3$, endurence of surge current and deviation of varistor voltage were 7000A/$cm^2$, $\Delta-2.08%$, respectively.