• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2004년도 제26회 학술발표회 초록집
• /
• pp.170-170
• /
• 2004

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
• /
• pp.337-337
• /
• 2012

Dye sensitized solar cell (DSSC) having high efficiency with low cost was first reported by Gr$\ddot{a}$tzel et al. Many DSSC research groups attempt to enhance energy conversion efficiency by modifying the dye, electrolyte, Pt-coated electrode, and $TiO_2$ films. However, there are still some problems against realization of high-sensitivity DSSC such as the recombination of injected electrons in conduction band and the limited adsorption of dye on $TiO_2$ surface. The surface of $TiO_2$ is very important for improving hydrophilic property and dye adsorption on its surface. In this paper, we report a very efficient method to improve the efficiency and stability of DSSC with nano-structured $TiO_2$. Atmospheric plasma system was utilized for nitrogen plasma treatment on nano-structured $TiO_2$ film. We confirmed that the efficiency of DSSC was significantly dependent on plasma power. Relative in the $TiO_2$ surface change and characteristics after plasma was investigated by various analysis methods. The structure of $TiO_2$ films was examined by X-ray diffraction (XRD). The morphology of $TiO_2$ films was observed using a field emission scanning electron microscope (FE-SEM). The surface elemental composition was determined using X-ray photoelectron spectroscopy (XPS). Each of plasma power differently affected conversion efficiency of DSSC with plasma-treated $TiO_2$ compared to untreated DSSC under AM 1.5 G spectral illumination of $100mWcm^{-2}$.

• 멤브레인
• /
• 제13권2호
• /
• pp.73-80
• /
• 2003

폴리메틸펜텐 막(polymethylpentene membrane, PMP)을 Ar, NH_3$ 플라즈마로 표면 처리하고, 처리 전후의 투과 도와 선택도의 변화를 관찰하였다. Ar 플라즈마로 처리하였을 때 O/C의 비율이 증가하며 친수성기 (OH, COOH, C=O)의 도입이 확인되었고 $NH_3$ 플라즈마로 처리하였을 때 아민, 아미노기가 도입되었다. 플라즈마 처리된 폴리메틸펜텐막에서 $CO_2$의 투과도와 $N_2$,에 대한 선택도 (Actual Separation Factor)의 최적조건은 Ar 플라즈마 처리 (30 W-6 min)의 경우 각각 182 Barrer ［$10^{-10}\;cm^3(STP)cm/cm^2$.s.cmHg］와 6.17이며, $NH_3$, 플라즈마 처리 (30 W-8 min)의 경우 각각 144 Barrer [$10^{-10}/cm^2(STP)cm/cm^2$.s.cmHg] 와 6.13을 얻었다.

• Transactions on Electrical and Electronic Materials
• /
• 제7권4호
• /
• pp.204-209
• /
• 2006

Photo Resist (PR) ashing process was carried out with the atmospheric pressure- dielectric barrier discharge (ADBD) using $SF_6/N_2/O_2$. Ashing rate (AR) was sensitive to the mixing ratio of the oxygen and nitrogen of the blower type of ADBD asher. The maximum AR of 5000 A/min was achieved at 2% of oxygen in the $N_2$ plasma. With increasing the oxygen concentration to more than 2% in the $N_2$ plasma, the discharge becomes weak due to the high electron affinity of oxygen, resulting in the decrease of AR. When adding 0.5% of SF6 to $O_2/N_2$ mixed plasma, the PR AR increased drastically to 9000 A/min and the ashed surface of PR was smoother compared to the processed surface without $SF_6$. Carbon Fluorinated polymer may passivate the PR surface. It was also observed that the glass surface was not damaged by the fluorine.

• 한국진공학회지
• /
• 제17권3호
• /
• pp.199-203
• /
• 2008

$O_2$ 플라즈마를 이용한 표면처리 공정이 Bio-FET (biologically sensitive field-effect transistor)에 미치는 영향을 조사하기 위하여, SOI (Silicon-on-Insulator) wafer와 sSOI (strained- Si-on-Insulator) wafer를 이용하여 pseudo-MOSFET을 제작하고 $O_2$ 플라즈마를 이용하여 표면처리를 진행하였다. 제작된 시료들은 back gated metal contact junction 방식으로 측정되었다. $I_D-V_G$ 특성과 field effect mobility 특성의 관찰을 통하여 $O_2$ 플라즈마 표면처리에 따른 각 시료들의 전기적 특성 변화에 대하여 관찰하였다. 그리고 $O_2$ 플라즈마 표면처리 과정에서 플라즈마에 의한 손상을 받은 시료들은 2% 수소희석가스 ($H_2/N_2$)를 이용한 후속 열처리 공정을 진행한 후 전기적 특성이 향상되는 것을 관찰할 수 있었다. 이는 수소희석가스를 이용한 후속 열처리 공정을 통하여 산화막과 Si 사이의 계면 준위와 산화막 내부의 전하 포획 준위를 감소시켰기 때문이다.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 2006년도 추계학술대회 논문집 전기물성,응용부문
• /
• pp.71-72
• /
• 2006

플라스틱 기판 위에 유도 결합 플라즈마 화학적 기상 증착장치 (Inductively Coupled Plasma Chemicai Vapor Deposition, ICP-CVD) 를 사용하여 실리콘 산화막 ($SiO_2$)을 증착하고, 엑시머레이저 어널링 (Excimer Laser Annealing, ELA) 과 $N_{2}O$ 플라즈마 전처리를 통해, 전기용량-전압(Capacitance-Voltage, C-V) 특성과 항복 전압장 (Breakdown Voltage Field) 과 같은 전기적 특성을 개선시켰다. 에너지 밀도 $250\;mJ/cm^2$ 의 엑시머 레이저 어닐링은 실리콘 산화막의 평탄 전압 (Flat Band Voltage) 을 0V에 가까이 이동시키고, 유효 산화 전하밀도 (Effective Oxide Charge Density)를 크게 감소시킨다. $N_{2}O$ 플라즈마 전처리를 통해 항복 전압장은 6MV/cm 에서 9 MV/cm 으로 향상된다. 엑시머 레이저 어닐링과 $N_{2}O$ 플라즈마 전처리를 통해 평탄 전압은 -9V 에서 -1.8V 로 향상되고, 유효 전하 밀도 (Effective Charge Density) 는 $400^{\circ}C$에서 TEOS 실리콘 산화막을 증착하는 경우의 유효 전하 밀도 수준까지 감소한다.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2010년도 하계학술대회 논문집
• /
• pp.174-174
• /
• 2010

In this article, the dry etching mechanism of ZnO thin films in $N_2/Cl_2$/Ar gas chemistry was investigated. The ZnO thin films were deposited on Si substrate using Atomic layer deposition. The etching experiments were performed by inductively coupled plasma system. The maximum etch rate was104.5 nm/min and the highest selectivity of ZnO over $SiO_2$ was 3.3. Etching rate was measured by surface profiler. And the chemical reaction on the surface of the etched ZnO thin films was investigated by x-ray photo electrons pectroscopy. As a result of XPS, $Zn2p_{3/2}$ peak shifted toward a higher binding energy and the O-O and N-O bond were obtained from the sample of ZnO thin film which after plasma treatment.

• 한국추진공학회지
• /
• 제23권3호
• /
• pp.1-8
• /
• 2019

아산화질소($N_2O$) 열분해를 위해 아크 플라즈마를 이용한 점화 실험을 수행하였다. 기존의 점화기들은 신뢰성 및 즉각적인 응답을 얻기 어렵다는 단점을 해결하기 위한 방안으로 플라즈마를 활용하는 방안을 제시하고자 하며, 점화기로써의 가능성을 보기 위해 가스 온도 측정 및 연소 실험을 수행하였다. 1 g/s, 0.7 A 조건에서 가장 안정적인 방전 특성을 보였으며 이때 측정된 벽면 부근의 온도는 약 $960^{\circ}C$이었다. 이를 바탕으로 하이브리드 로켓 연소 실험을 수행하였다. 플라즈마 방전 이후 약 3.1 sec만에 총 유량 10 g/s의 메인 연소가 성공적으로 이루어졌으며 점화에 필요한 플라즈마 발생을 위한 에너지 소모량은 1,780 J이었다.

• Korean Membrane Journal
• /
• 제1권1호
• /
• pp.65-72
• /
• 1999

The surface of polypropylene membrane was modified by plasma treatment using Ar,$N_{2}$, $NH_{2}$ and $O_{2}$ Permeabilities for $CO_{2}$, $N_{2}$ and separation factor for $CO_{2}$ relative to $N_{2}$ were measured. The permeation experiments were performed by a variable volume method at $25^{\circ}C$ and 0.303MPa. The effects of the plasma conditions such as treatement time power input gas flow rate and pressure in the reactor on the transport properties of modified membrane were investigated. The surface of the plasma treated membrane was analyzed by means of FTIR-ATR XPS and AFM. The surface structure of the plasma treated membrane was fairly different from that of the untreated membrane. Although the permeation rates for both $CO_{2}$ and $N_{2}$ decreased with increasing plasma treatement time the separation factor was found to be improved by the plasma treatement. The operating conditions of plasma treatement imposed on membranes had notable effect on the permeability and separation factor.

• Current Photovoltaic Research
• /
• 제3권4호
• /
• pp.112-115
• /
• 2015

In this study, the surface of ITO films was modified using $N_2-O_2$ molecular plasma, and the effects of oxygen concentration in the plasma on the ITO surface properties were investigated. Upon plasma treatment of ITO films, the surface roughness of ITO films seldom changed up to the oxygen concentration in the range of 0% to 40%, while the roughness of the films slightly changed at or above the oxygen concentration of 60%. The contact angle of water droplet on ITO films dramatically changed with varying oxygen concentration in the plasma, and the minimum value was found to be at the oxygen concentration of 20%. The plasma resistance at this condition exhibited a maximum value, and the change of resistance showed an inverse relationship compared to that of contact angle. From these results, it was conjectured that the chemical reactions in the sheath of the molecular plasma dominated more than the physical actions due to energetic ion bombardment, and also the plasma resistance could be used as an indirect indicator to qualitatively diagnosis the state of plasma during the plasma treatment.