• Title/Summary/Keyword: $N_2O$ Formation

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Formation of N Doped, p-type ZnO Films by Post-annealing in NH3 Ambient (NH3 분위기에서 후속 열처리에 의한 p형 ZnO 형성)

  • Jung, Eun-Soo;Kim, Hong-Seung;Cho, Hyung-Kun
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.19 no.7
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    • pp.611-617
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    • 2006
  • We report the preparation of N doped, p-type ZnO films by post-annealing in $NH_3$ ambient. The properties were examined by XRD, Hall-effect measurement, PL, and SIMS. ZnO films showed better crystallinity and electron concentration of $10^{15}-10^{17}/cm^3$ with post-annealing in $NH_3$ ambient. These films were converted to p-type ZnO by activation thermal annealing process at $800^{\circ}C$ under $N_2$ ambient. The electrical properties of the p-type ZnO showed a hole concentration of $1.06\times10^{16}/cm^3$, a mobility of $15.8cm^2/V{\cdot}s$, and a resistivity of $40.18\Omega{\cdot}cm$. The N doped ZnO films showed a strong photoluminescence peak at 3.306 eV at 13 K, which is closely related to neutral acceptor bound excitons of the p-type ZnO:N. In the SIMS spectra, the incorporation of nitrogen was confirmed.

The Complexing Effect of $BaTiO_3\;for\;Bi_4Ti_3O_{12}$ on Layered Perovskite $Bi_4Ti_3O_{12}{\cdot}nBaTiO_3(n=1&2)$ Thin Films ($Bi_4Ti_3O_{12}{\cdot}nBaTiO_3(n=1&2)$ 박막에서 $Bi_4Ti_3O_{12}$ 에 대한 $BaTiO_3$의 복합효과)

  • 신정묵;고태경
    • Journal of the Korean Ceramic Society
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    • v.35 no.11
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    • pp.1130-1140
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    • 1998
  • Thin films of $Bi_4Ti_3O_{12}\;nBaTiO_3(n=1&2)$ were prepared using sols erived Ba-Bi-Ti complex alkoxides. The sols were spin-cast onto $Pt/Ti/SiO_2/Si$ substrates and followed by pyrolysis for 1 hr at $620^{\circ}C,\;700^{\circ}C\;and\;750^{\circ}C$ In the thin films a pyrochlore phase seemed to be formed at a lower temperature and then tran-formed to the layered perovskite phase as the heating temperature increased. In the thin films pyrolyzed at formed to the layered perovskte phase as the heating temperature increased. In the films pyrolyzed at $750^{\circ}C$ the amount of $Bi_4Ti_3O_{12}{\cdot}BaTiO_3$ reached to 94% while $Bi_4Ti_3O_{12}{\cdot}BaTiO_3$ was 77% in composition. This result shows that the formation of the layered pervoskite phase becomes difficult as the amount of complexing $BaTiO_3$ increases. The microstructures and the electrical properties of the thin films were gen-erally improved with the incease of the heating temperature. However the presence of the pyrochlore phase could not be removed effectively. Our study showed that the electrical properties of $Bi_4Ti_3O_{12}{\cdot}BaTiO_3$ were pronouncedly improved with complexing with BaTiO3 when compared to those of $Bi_4Ti_3O_{12}$ while the presence of the pyrochlore phase was detrimental to the those of $Bi_4Ti_3O_{12}{\cdot}2BaTiO_3$.

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Detailed Analysis of NO Formation Routes with Strain Rate in H2/Air Nonpremixed Flames (H2/Air 비예혼합화염의 화염신장율에 따른 NO 생성경로의 상세해석)

  • Kim, Jong-Hyun;Hwang, Cheol-Hong;Lee, Chang-Eon
    • Transactions of the Korean Society of Mechanical Engineers B
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    • v.32 no.8
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    • pp.604-611
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    • 2008
  • Detailed analysis of NO formation routes and its contributions with strain rate in hydrogen/air flames were numerically investigated. LiG detailed reaction mechanism has been used for calculation, which is compared with experimental data in literature. It shows good agreement with experiment for both temperature and NO mole fraction. Three routes have been found important for NO formation in hydrogen flames. These are the Thermal route, NNH route and $N_2O$ route. Strain rate were varied to discuss the $EI_{NO}$ reduction trend in hydrogen nonpremixed flames, which are analyzed by each NO formation routes. As a result, as the strain rate increase, $EI_{NO}$ decrease sharply until strain rate $100s^{-1}$ and decrease slowly until strain rate $310s^{-1}$ again, after that $EI_{NO}$ keeps nearly constant. It can be identified that $EI_{NO}$ trend with the strain rate is well explained by a combination of variation of production rate of above Thermal, NNH and $N_2O$ route. Also result of Thermal-Mech. that includes only thermal NO reaction is compared with those of Full-Mech. As a result, It can be identified that there was difference between the two results of calculation. It is attributed to result that Thermal-mech did not consider contributions of NNH and $N_2O$ route. From these result, we can conclude that NOx emission characteristics of hydrogen nonpremixed flames should consider contributions of above three routes simultaneously.

A Study on Measurement of NO Concentrations in Burner Flames by LIF (레이저 유도 형광법(LIF)을 이용한 버너 화염의 NO 농도측정에 관한 연구)

  • Park, K.S.;Kim, S.W.
    • Journal of ILASS-Korea
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    • v.7 no.4
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    • pp.42-49
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    • 2002
  • In this study, quantitative measurement of nitric oxide concentration distributions were investigated in the laminar CH4/O2/N2 premixed flame by laser-induced fluorescence (LIF). The NO A-X (0,0) vibrational band around 226nm was excited using a XeCl excimer-pumped dye laser. Selecting an appropriate NO transition minimizes interference from Rayleigh scattering and O2 fluorescence. The measurements were taken in CH4/O2/N2 premixed flame with equivalence ratios varying from $1.0{\sim}1.6$, and a fixed flowrate of 5slpm. NO was found to produce primarily between an inner premixed and an outer nonpremixed flame front, and total NO concentration is raised when equivalence ratios increase. These results suggest that prompt NO is likely to contribute to NO formation in CH4/O2/N2 premixed flame. Furthermore, this trend was well matched with previous works.

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Effects of the Decomposition Residue of Compound Additive on Resintering Behavior

  • Kim, H.S.;C.Y. Joung;Kim, S.H.;S.H. Na;Lee, Y.W.;D.S. Sohn
    • Nuclear Engineering and Technology
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    • v.34 no.4
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    • pp.323-330
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    • 2002
  • Various types of compounds were tested with the aspects of decomposition and formation of residue in a $CO_2$ or 7H$_2$+93$N_2$ atmosphere. The evaporation temperature range of each compound was determined from thermogravimetric curve. Decomposition of dicarbon amide, stearic acid, acrowax and zinc stearate was studied by thermogravimetry in $CO_2$ or in 7H$_2$+93$N_2$ atmosphere. All compounds were decomposed in $CO_2$ atmosphere at lower than 40$0^{\circ}C$, but the residue, ZnO remained for zinc stearate. ZnO did not decompose in $CO_2$ atmosphere up to 130$0^{\circ}C$, but reduced into Zn metal and disappeared in the temperature range of $600^{\circ}C$ to 120$0^{\circ}C$ in 7H$_2$+93$N_2$ atmosphere. The effect of residue, which trapped in closed pores of sintered pellet, on the thermal stability was studied using the resintering test at 1$700^{\circ}C$ in 7H$_2$+93$N_2$ atmosphere. In the case of oxidative sintered pellet with admixing zinc stearate, the cavity formation accompanied with a density drop after resintering is due to the pressure of the Zn gases trapped in the isolated pores.

Synthesis of $\beta$다-Sialon with Various Compositions from Kaolin (카올린으로부터 조성이 다른$\beta$다-Sialon의 합성)

  • 최상욱;서규식;이종진
    • Journal of the Korean Ceramic Society
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    • v.23 no.5
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    • pp.17-24
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    • 1986
  • β'-Sialon with different compositions was synthesized by the carbothermal reduction-nitridation of compacts containing kaolin graphite and silicon or aluminum at temperature of 1300-1450℃ under flowing gas of 90% N2-10% H2 or 20hrs. Quantitative analysis of minerals which were formed in the specimens was carried out by using the calibration curve which has been prepared from X-ray diffraction patterns. The obtained results were as follows : 1. In the formation of β'-Sialon by carbothermal reduction-nutridation of Si-Al-O-C system mixtures at 1400℃ for 20hrs. (2) β'-Sialon as a major mineral and α-Al2O3 as a minor mineral were identified in the specimen which was prepared of kaolin and graphite. (3)α-Al2O3 and 15R as a minor minerals were measured in the specimen which was prepared of kaolin aluminum and graphite. (4) AlN instead of α-Al2O3 and 15R was formed in the compacts that excess graphite(=35 wt%) was added to the mixture of kaolin and aluminium. 2. As the reaction time and temperature were increased the formation of β'-Sialon was increased whereas the phases of mllite SiC and Si2ON2 were decreased gradually.

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Promoting Effect of Hydrogen Peroxide on 1-Methyl-4-phenylpyridinium-induced Mitochondrial Dysfunction and Cell Death in PC12 Cells

  • Lee, Dong-Hee;Lee, Chung-Soo
    • The Korean Journal of Physiology and Pharmacology
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    • v.10 no.1
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    • pp.51-58
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    • 2006
  • The promoting effect of hydrogen peroxide ($H_2O_2$) against the cytotoxicity of 1-methyl-4-phenylpyridinium ($MPP^+$) in differentiated PC12 cells was assessed by measuring the effect on the mitochondrial membrane permeability. Treatment of PC12 cells with $MPP^+$ resulted in the nuclear damage, decrease in the mitochondrial transmembrane potential, cytosolic accumulation of cytochrome c, activation of caspase-3, increase in the formation of reactive oxygen species (ROS) and depletion of GSH. Addition of $H_2O_2$ enhanced the $MPP^+-induced$ nuclear damage and cell death. Catalase, Carboxy-PTIO, Mn-TBAP, N-acetylcysteine, cyclosporin A and trifluoperazine inhibited the cytotoxic effect of $MPP^+$ in the presence of $H_2O_2$. Addition of $H_2O_2$ promoted the change in the mitochondrial membrane permeability, ROS formation and decrease in GSH contents due to $MPP^+$ in PC12 cells. The results show that the $H_2O_2$ treatment promotes the cytotoxicity of $MPP^+$ against PC12 cells. $H_2O_2$ may enhance the $MPP^+$-induced viability loss in PC12 cells by promoting the mitochondrial membrane permeability change, release of cytochrome c and subsequent activation of caspase-3, which is associated with the increased formation of ROS and depletion of GSH. The findings suggest that $H_2O_2$ as a promoting agent for the formation of mitochondrial permeability transition may enhance the neuronal cell injury caused by neurotoxins.

The Formation of N-Nitrosamine during Fermentation of Kakdugi (깍두기 숙성 중 N-Nitrosamine의 생성)

  • 성낙주;구경숙;신정혜;정미자;이수정
    • Journal of the Korean Society of Food Science and Nutrition
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    • v.28 no.1
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    • pp.33-39
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    • 1999
  • Traditional kakdugi prepared from salted radish by the addition of fermented shrimp or anchovy sauce along with seasonings and spices, e.g., red pepper powder, garlic or ginger, which has been examined for the formation of volatile nitrosamine(NA) during its fermentation at 5oC and 17oC. Changes of acidity were increased; while, those of ascorbic acid and pH were continually de creased and besides concentrations of salt were scarcely observed during the fermentation of kakdugi at 5oC and 17oC. High initial levels of nitrate in radish followed by a gradual decreased in nitrate concentration, along with increasing levels of nitrite, during its fermentation. During the fermentation of kakdugi, NA such as N nitrosodimethylamine(NDMA) and N nitrosodiethylamine(NDEA) was identified; these NA in kakdugi that had been prepared with shrimp sauce contained in the higher levels than kimchi that had been prepared with anchovy sauce, and both NDMA and NDEA were detected higher levels in the fermented sample at 17oC than in the fermented sample at 5oC. In kakdugi, NDMA and NDEA levels were continually increased during its fermentation; its levels after 35 days fermentation at 17oC were 0.5~16.7 and 0~5.2 g/kg in added shrimp sauce sample, 0. 5~8.7 and 0~4.7 g/kg in added anchovy sauce sample and 0.4~4.8 and 0~2.4 g/kg in control, respectively. The occurrence of NA such as NDMA and NDEA appeared to arise from the fermented sauce and radish used in preparation of the kimchi.

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LASER FLASH PHOTOLYSIS STUDY ON THE PHOTOCYCLIZATION OF N-(O-HALOBENZYL) IMIDAZOLE

  • Park, Yong-Tae;Hwang, Young-Sun;Song, Woong Song;Kim, Dongho
    • Journal of Photoscience
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    • v.3 no.2
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    • pp.91-93
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    • 1996
  • In connection with our interest on the photochemical properties of heteroaryl halides, which are currently the subject of heterocyclic ring formation and haloarene degradation, we have studied the photochemistry of the haloarene linked to N-heteroarene compounds. Imidazo[5,1-a]isoindole was synthesized from N-(ochlorobenzyl)imidazole or N-(o-bromobenzyl) imidazole in acidic aqueous solution or acetonitrile via the intramolgcular photocyclization (Table 1). This type of reaction provides the synthetic methods for 5- and 6-membered polyheteroatomic heterocyclic ring compounds. However, the reaction mechanism for the intramolecular photocyclization of haloarene tethered heteroarenes has not yet been established. Grimshaw et al. suggested a mechanism for homolyric carbonhalogen bond fission assisted by radical complexation to explain their results in the photocyclization of 5-(2-chlorophenyl)-1,3-diphenylpyrazole. They also reported the detection of acyclohexadienyl intermediate involved in the above reaction. Park et al. reported several transient 'intermediates involved in the laser flash photolysis of N-(o-halobenzyl) pyridinium and N-benzyl-2-halopyridinium salts. Thus we performed the laser flash photolysis study on the photocyclization reaction of N-(o-chlorobenzyl) imidazole to identify the intermediate species involved in the reaction. Here, we report on the preliminary results in the photocyclization reaction of N-(o-halobenzyl)imidazole through the detection of reaction intermediates.

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The Effects of Doping Hafnium on Device Characteristics of $SnO_2$ Thin-film Transistors

  • Sin, Sae-Yeong;Mun, Yeon-Geon;Kim, Ung-Seon;Park, Jong-Wan
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.02a
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    • pp.199-199
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    • 2011
  • Recently, Thin film transistors (TFTs) with amorphous oxide semiconductors (AOSs) can offer an important aspect for next generation displays with high mobility. Several oxide semiconductor such as ZnO, $SnO_2$ and InGaZnO have been extensively researched. Especially, as a well-known binary metal oxide, tin oxide ($SnO_2$), usually acts as n-type semiconductor with a wide band gap of 3.6eV. Over the past several decades intensive research activities have been conducted on $SnO_2$ in the bulk, thin film and nanostructure forms due to its interesting electrical properties making it a promising material for applications in solar cells, flat panel displays, and light emitting devices. But, its application to the active channel of TFTs have been limited due to the difficulties in controlling the electron density and n-type of operation with depletion mode. In this study, we fabricated staggered bottom-gate structure $SnO_2$-TFTs and patterned channel layer used a shadow mask. Then we compare to the performance intrinsic $SnO_2$-TFTs and doping hafnium $SnO_2$-TFTs. As a result, we suggest that can be control the defect formation of $SnO_2$-TFTs by doping hafnium. The hafnium element into the $SnO_2$ thin-films maybe acts to control the carrier concentration by suppressing carrier generation via oxygen vacancy formation. Furthermore, it can be also control the mobility. And bias stability of $SnO_2$-TFTs is improvement using doping hafnium. Enhancement of device stability was attributed to the reduced defect in channel layer or interface. In order to verify this effect, we employed to measure activation energy that can be explained by the thermal activation process of the subthreshold drain current.

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