• Honam Mathematical Journal
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• v.28 no.4
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• pp.591-603
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• 2006

For a set $X{\subset}{\mathbb{Z}}^n$ let $(X,\;T^n_X)$ be the subspace of the Khalimsky n-dimensional space $({\mathbb{Z}}^n,\;T^n)$, $n{\in}N$. Considering a k-adjacency of $(X,\;T^n_X)$, we use the notation $(X,\;k,\;T^n_X)$. In this paper for a map $$f:(X,\;k,\;T^n_X){\rightarrow}(Y,\;2\;T_Y)$$, we find the condition that weak (k, 2)-continuity of the map f implies strong (k, 2)-continuity of f.

• The Korean Journal of Ecology
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• v.3 no.1_2
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• pp.11-16
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• 1980

Growth analytical and primary productivity experiments of soybean populations were conducted with special references to the development of productive structures and environmental conditions of nitrogen levels $(N_1,\; control:\; N_2,\; 6.67gN/\textrm m^2:\; N_3,\;13.34\textrm {gN/m}^2)$. The maximum amounts in LAI for $N_1,\; N_2\; and\; N_3$ stand were 17.3, 19.0 and 18.5; in total standing grops, 1570, 1785 and 1704gDM/$\m^2$; in total net productions, 543, 648 and 636gDM/$\m^2$, respectively. The maximum CGR attanined were 208, 237 and 272 gDM$\m^2$/week, while the mean EU was 2.55, 2.92 and 2.84% N1, N2 and N3, respectively. The total nitrogen standing quantity attained 53.4, 71.8 and 59.8 gN/$\m^2$ at the maximum standing crop period. The net nitrogen absorption rates showed highly significant differences among nitrogen treatments, i.e., 1.34, 10.77 and 13.22 mg/g/day for $N_1,\; N_2\; and \;N_3$ stand, repsectively.

• 전자공학회논문지 IE
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• v.43 no.2
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• pp.7-10
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• 2006

A GaN-based metal-insulator-semiconductor (MIS) structure has been fabricated by using $BaTa_2O_6$ instead of conventional oxide as insulator gate. The leakage current o) films are in order of $10^{-12}-10^{-13}A/cm^2$ for GaN on $Al_2O_3$(0001) substrate and in order of $10^{-6}-10^{-7}A/cm^2$ for GaN on GaAs(001) substrate. The leakage current of thses films is governed by space-charge-limited current over 45 MV/cm in case of GaN on $Al_2O_3$(0001) substrate and by Poole-Frenkel emission in case of GaN on GaAs(001).

• Journal of Life Science
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• v.25 no.12
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• pp.1399-1407
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• 2015

Klebsiella pneumoniae is found in the normal flora of the skin, mouth, respiratory tract, urinary tract, and intestines in human. However, the stain is opportunistic pathogen, which is the causative agent of community acquired pneumonia. Corn silk has been known to be effective for antimicrobial activity against pathogenic bacteria, including K. pneumoniae, Staphylococcus aureus, Bacillus subtilis, Shigella spp., Salmonella spp., Escherichia coli, Pseudomonas aeruginosa, et al. In this study we focused on the antimicrobial properties of con silk water extract of K. penumoniae. K. pneumoniae isolates K. pneumoniae ATCC 13883 and broad-spectrum β-lactamase (BSBL), exteded-spectrum β-lactamase (ESBL), carbapenemase-producers. Antimicrobial susceptibilities were determined by the disk diffusion method. Searches for bla genes were performed by PCR amplication and direct sequencing. MacConkey agar plate medium was prepared using the corn silk extracts (50% or 100%) instead of distilled water for antimicrobial activity test. The microbial growth inhibitory potential of K. pneumoniae was determined by using the MacConkey agar plate spreading method, and the plate was incubated 18 hr at 37℃. Genes encoding β-lactamases including SHV-1 (n=8), SHV-2a (n=8), SHV-5 (n=2), SHV-11 (n=2), SHV-12 (n=18), TEM-1 (n=10), CTX-M-3 (n=2), CTX-M-14 (n=2), CTX-M-15 (n=1), GES-5 (n=5), KPC-2 (n=6), KPC-3 (n=4), and NDM-1 (n=2) were detected. The corn silk extract showed significantly antimicrobial activity against K. pneumoniae ATCC 13883, but BSBLs, ESBLs, and carbapenemase producers were not. Therefore, corn silk extract is thought to be able to assist in the prevention and rapid recovery of infectious disease caused by K. pneumoniae.

• 전자공학회논문지 IE
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• v.46 no.3
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• pp.1-5
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• 2009

In this paper, we study the electrical characteristics of $RuO_2$/n-GaN Schottky diodes fabricated by using electrochemical metallization. The solution for GaN Schottky electrodes of $RuO_2$ is perchloric acid($HClO_4$). Thickness of $RuO_2$ layer depend on supplied voltage and dipping time. We verified the possibility of the rectifying and non-rectifying devices' electrode which was depend on the thickness of $RuO_2$ layer.

• Korean Journal of Soil Science and Fertilizer
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• v.47 no.1
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• pp.59-65
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• 2014

Generally, nitrogen (N) fertilization higher than the recommended dose is applied during vegetable cultivation for increasing in productivity. However, excessive N application rate beyond plant requirement could cause adverse environmental impact such as nitrate leaching and nitrous oxide emission. In this experiment, the impacts of N fertilization was studied on nitrous oxide ($N_2O$) emission to standardize the optimum fertilization level for minimizing of $N_2O$ emission as well as most of the crop productivity. Herein, we assessed the $N_2O$ emission in the flat upland soil which was cultivated with different N application rates on red pepper for 3 years (2010~2012). $N_2O$ emission was measured in chemical N fertilizer amounts 0 (N 0), 95 (N 0.5), 190 (N 1.0), $380(N_2.0)kgha^{-1}$ by using the abnormal shape chamber closed repeating three times. In average for 3 years, the total $N_2O$ emissions of each treatment in field of soybean were 2.110 (N 0), 3.165 (N 0.5), 5.039 (N 1.0), and $7.228(N_2.0)kgN_2Oha^{-1}yr^{-1}$, respectively. And then the primary regression between nitrogen fertilizer amount and the total $N_2O$ emission was showed as y = 0.0138x + 2.0942 ($r^2=0.9885$), and an average of the emission factor was $EF_1$ 0.0148(0.0118~0.0191) $N_2O-NkgN^{-1}kg^{-1}$ from 2010 to 2012. The result was a little higher than the emission default of the IPCC 1996 Guideline ($EF_1$ 0.0125) when the results are converted into $N_2O$ emission factor.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.66-69
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• 2001

Effect of $N_2$ flow rate on properties of GaN thin films grown by plasma-enhanced molecular beam epitaxy(PEMBE) was discussed to optimize the quality of thin films. It was found that at low $N_2$ flow rate indicating high III/V flux ratio, the growth rate of GaN thin films was controlled by $N_2$ flux, and at high $N_2$ flow rate the growth rate was not controlled by $N_2$ flux any longer. It was also found that III/V flux ratio affected film quality. The film grown at higher $N_2$ flow rate showed low background carrier concentration, higher carrier mobility, and narrow FWHM in band-edge emission of low temperature PL. It is thought that the film in more Ga flux region was grown by 2-dimensional layer-by-layer growth mode, and the film in more nitrogen region was grown by 3-D island growth mode. All samples exhibited a good crystallinity.

• Journal of the Korean Chemical Society
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• v.23 no.6
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• pp.368-373
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• 1979

Kinetic studies have been carried out on solvolyses and halide exchanges $(Cl^-,\;Br^-,\;I^-)$ of N,N-dimethyl-, N,N-diethylcarbamoyl chlorides, and solvolyses of N,N-diphenylcarbamoyl chloride. Kinetic results together with simple MO analysis indicated that: (a) N,N-dialkylcarbamoyl chlorides reacted via the $S_N2$ mechanism, while N,N-diphenylcarbamoylchloride reacted via the $S_N1$ mechanism; (b) in chloride exchanges, the bond-breaking appeared to be important, whereas in bromide and iodide exchanges, the bond-formation was shown to be important.

• Journal of applied mathematics & informatics
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• v.4 no.2
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• pp.513-528
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• 1997

A sort sequence $S_n$ is a sequence of all unordered pairs of indices in $I_n\;=\;{1,\;2,v...,\;n}$. With a sort sequence Sn we assicuate a sorting algorithm ($AS_n$) to sort input set $X\;=\;{x_1,\;x_2,\;...,\;x_n}$ as follows. An execution of the algorithm performs pairwise comparisons of elements in the input set X as defined by the sort sequence $S_n$, except that the comparisons whose outcomes can be inferred from the outcomes of the previous comparisons are not performed. Let $X(S_n)$ denote the acverage number of comparisons required by the algorithm $AS_n$ assuming all input orderings are equally likely. Let $X^{\ast}(n)\;and\;X^{\circ}(n)$ denote the minimum and maximum value respectively of $X(S_n)$ over all sort sequences $S_n$. Exact determination of $X^{\ast}(n),\;X^{\circ}(n)$ and associated extremal sort sequenes seems difficult. Here, we obtain bounds on $X^{\ast}(n)\;and\;X^{\circ}(n)$.

• Journal of the Korean Mathematical Society
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• v.50 no.2
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• pp.275-306
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• 2013

For two positive integers $m$ and $n$, let $\mathcal{P}_n$ be the open convex cone in $\mathbb{R}^{n(n+1)/2}$ consisting of positive definite $n{\times}n$ real symmetric matrices and let $\mathbb{R}^{(m,n)}$ be the set of all $m{\times}n$ real matrices. In this paper, we investigate differential operators on the non-reductive homogeneous space $\mathcal{P}_n{\times}\mathbb{R}^{(m,n)}$ that are invariant under the natural action of the semidirect product group $GL(n,\mathbb{R}){\times}\mathbb{R}^{(m,n)}$ on the Minkowski-Euclid space $\mathcal{P}_n{\times}\mathbb{R}^{(m,n)}$. These invariant differential operators play an important role in the theory of automorphic forms on $GL(n,\mathbb{R}){\times}\mathbb{R}^{(m,n)}$ generalizing that of automorphic forms on $GL(n,\mathbb{R})$.