• 한국재료학회:학술대회논문집
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• 한국재료학회 2003년도 춘계학술발표강연 및 논문개요집
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• pp.120-120
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• 2003

MOCVD법으로 TiN 표면에 Ru을 증착함에 있어서 Ru의 핵생성을 고양시키기 위한 ECR plasma 전처리 세정이 필요하다. 본 연구에서는 Ru 증착시 ECR $H_2O$$_2$, AE Plasma 전처리 세정 효과를 SEM, AES, XRD로 분석하였다. Ru의 핵생성은 ECR H$_2$, Ar Plasma의 노출시간이 증가할수록 향상된 반면, ECR $O_2$ plasma의 경우 노출시간이 증가할수록 핵생성 효과는 감소하였다. H$_2$ plasma 내의 H$_2$ion은 Ti와 NH$_3$를 형성하기 위해서 TiN과 반응하여 TiN을 Ti로 개질 시켰으며, Ar plasma 전처리 세정하는 동안 Ar plasma 내의 Ar ion은 TiN 또는 TiON 표면의 질소와 산소원자를 제거하는 효과를 나타내었다. 그 결과 TiN 표면상에서도 Ru의 핵생성이 쉽게 이루어졌으며 H$_2$, Ar ECR Plasma 전처리 세정에서 RU 핵생성이 향상되는 결과를 얻었다. 세 종류의 plasma중에서 Ar ECR plasma로 전처리 세정한 경우에 가장 높은 Ru 핵생성 밀도를 얻을 수 있었다.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2002년도 International Meeting on Information Display
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• pp.563-566
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• 2002

We investigated to decrease the leakage current of SiNx film by employing $N_2$ plasma treatment. The insulator layers were prepared by two step process; the $N_2$ plasma treatment and then PECVD SiNx deposition with $SiH_4$, $N_2$ gases. To prove the influence of the $N_2$ plasma treatment, the Si substrate was exposed to the plasma, which was generated in Ne gas ambient. Without plasma treatment SiNx film grow at the rate of 7. 03 nm/min, has a refractive index n = 1.77 and hydrogen content of $2.16{\times}10^{22}cm^{-3}$ for $N_2/SiH_4$ gas flow ratio of 20. The obtained films were analyzed in terms of deposition rates, refractive index, hydrogen concentration, and electrical properties. By employing $N_2$ plasma treatment, interface traps such as mobile charges and injected charges were removed, hysteresis of capacitance-voltage (C-V) disappeared. We observed plasma treated sample were decreased the leakage current density reduces by 2 orders with respect to the sample having no plasma treatment.

• 전기학회논문지P
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• 제58권4호
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• pp.516-520
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• 2009

Atmosphere Plasmas of Gas Discharge (APGD) have been used in plasma sources for material processing such as etching, deposition, surface modification, etc. This study is to investigate and understand the fundamental plasma discharge properties. Especially, $SF_6/N_2$ mixed gas would be used in power transformer, GIS (Gas insulated switchgear) and so on. In this paper, we developed a one dimensional fluid simulation model with capacitively coupled plasma chamber at the atmosphere pressure (760 [Torr]). 38 kinds of $SF_6/N_2$ plasma particles which are an electron, two positive ions (${SF_5}^+$, ${N_2}^+$), five negative ions (${SF_6}^-$, ${SF_5}^-$, ${SF_4}^-$, ${F_2}^-$, ${F_1}^-$), thirty excitation and vibrational particles for $N_2$ were considered in this computation. The $N_2$ gases of 20%, 50%, 80% were mixed in $SF_6$ gas. As the amount of $N_2$ gas was increased, the properties of electro-negative plasma moved toward the electro-positive plasma.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1998년도 추계학술대회 논문집 학회본부 C
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• pp.895-897
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• 1998

The optical spectra of microwave plasma by four kinds of gases($N_2$, $N_2-CH_4$, $H_{2}-CH_{4}$ and Air-$CH_4$) have been measured for investigating 388.4[nm] peak which has the same intensity as $H_{\alpha}$(656.4[nm]) peak. A 388.4[nm] peak by $N_2$ plasma, $N_{2}-CH_{4}$ plasma and Air-$CH_4$ plasma may be CN peak because it is with 337.1, 357.8 and 316.0[nm] peaks by $N_2$. And a 388.4[nm] peak by $H_{2}-CH_{4}$ plasma without by $N_2$ 337.1, 357.8 and 316.0[nm] peaks may be CH peak. In the investigation results for optical spectra by $H_{2}-CH_{4}$ plasma and $H_{2}-CH_{4}-O_{2}$ plasma, the density of hydrogen atom was increased because oxygen decompose hydrogen molecules in $H_{2}-CH_{4}$ plasma with oxygen. These hydrogen atom decompose $CH_4$ and increase CH radical. And the crystalline of deposited diamond was good and the growth rate increased.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 추계학술대회 논문집 Vol.16
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• pp.360-363
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• 2003

In this paper, we investigated SiNx film as a buffer layer of TFT-FRAM. Buffer layers were prepared by two step process of a $N_2$ plasma treatment and subsequent $SiN_x$ deposition. By employing $N_2$ plasma treatment, interface traps such as mobile charges and injected charges were removed, hysteresis of current-voltage curve disappeared. After $N_2$ plasma treatment, a leakage current was decreased about 2 orders. From these results, it is possible to perform the plasma treating process to make a good quality buffer layer of MFIS-FET or capacitor as an application of non-volatile memory.

• 한국세라믹학회지
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• 제29권9호
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• pp.681-688
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• 1992

Ultrafine Si3N4 and Si3N4+SiC mixed powders were synthesized through thermal plasma chemical vapor deposition(CVD) using a hybrid plasma, which was characterized by the supersposition of a radio-frequency plasma and arc jet. The reactant SiCl4 was injected into an arc jet and completely decomposed in a hybrid plasma, and the second reactant CH4 and/or NH3 mixed with H2 were injected into the tail flame through double stage ring slits. In the case of ultrafine Si3N4 powder synthesis, reaction efficiency increased significantly by double stage injection compared to single stage one, although crystallizing behaviors depended upon injection speed of reactive quenching gas (NH3+N2) and injection method. For the preparation of Si2N4+SiC mixed powders, N/C composition ratio could be controlled by regulating the injection speed of NH3 and/or CH4 reactant and H2 quenching gas mixtures as well as by adjusting the reaction space.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제55권12호
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• pp.601-605
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• 2006

The resistance-capacitance (RC) delay of signals through interconnection materials becomes a big hurdle for high speed operation of semiconductors which contain multi-layer interconnections in smaller scales with higher integration density. Low-k materials are applied to the inter-metal dielectric (IMD) materials in order to overcome the RC delay. Relaxation continuum (RCT) model that includes neutral-species transport model have developed to model the etching process in a capacitively coupled plasma (CCP) device. We present the parametric study of the modeling results of a two-frequency capacitively coupled plasma (2f-CCP) with $N_2/H_2$ gas mixture that is known as promising one for organic low-k materials etching. For the etching of low-k materials by $N_2/H_2$ plasma, N and H atoms have a big influence on the materials. Moreover the distributions of excited neutral species influence the plasma density and profile. We include the neutral transport model as well as plasma one in the calculation. The plasma and neutrals are calculated self-consistently by iterating the simulation of both species till a spatio-temporal steady state profile could be obtained.

• 한국응용과학기술학회지
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• 제21권2호
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• pp.148-155
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• 2004

Response surface analysis was used to study dietary ratios of n-3/n-6 fatty acid and P/S to minimize plasma triglycerides, total cholesterol and LDL ${\cdot}$ VLDL-C levels and maximize plasma HDL ${\cdot}$ C levels of rats. Because the dietary components were not statistically independent, they were studied in combinations of two variables. The two-variable combinations were the most useful in locating the desired maximum or minimum plasma triglycerides, total cholesterol and LDL ${\cdot}$ VLDL-C response in terms of the proportions of the dietary components. Response surface contours and three dimensional plots were developed for each plasma lipid response. The contours and three dimensional plots were used to help determine those combinations of the dietary fatty acid ratios that would produce the desired minimum or maximum lpid responses. The statistical analyses indicated that the minimized plasma cholesterol response levels could be attained with a diet consisting of 2.26 n-3/n-6 fatty acid and 2.15 P/S ratios.

• Korean Membrane Journal
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• 제1권1호
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• pp.65-72
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• 1999

The surface of polypropylene membrane was modified by plasma treatment using Ar,$N_{2}$, $NH_{2}$ and $O_{2}$ Permeabilities for $CO_{2}$, $N_{2}$ and separation factor for $CO_{2}$ relative to $N_{2}$ were measured. The permeation experiments were performed by a variable volume method at $25^{\circ}C$ and 0.303MPa. The effects of the plasma conditions such as treatement time power input gas flow rate and pressure in the reactor on the transport properties of modified membrane were investigated. The surface of the plasma treated membrane was analyzed by means of FTIR-ATR XPS and AFM. The surface structure of the plasma treated membrane was fairly different from that of the untreated membrane. Although the permeation rates for both $CO_{2}$ and $N_{2}$ decreased with increasing plasma treatement time the separation factor was found to be improved by the plasma treatement. The operating conditions of plasma treatement imposed on membranes had notable effect on the permeability and separation factor.

• Journal of Nutrition and Health
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• 제27권2호
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• pp.109-117
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• 1994

This study was conducted to evaluate dietary fat intake and its effect on the plasma lipids and fatty acids composition in plasma and red blood cells(RBC) in 96 healthy Korean female college student. Three-day food intakes were recorded, and fasting blood samples were collected and analyzed for plasma total cholesterol and triglyceride. Fatty acid compositions were determined in plasma and RBC membrane. Oleic acid was the most abundant in diet, followed by palmitic and linoleic acids. Mean daily intake of cholesterol was 219$\pm$127mg, mean plasma cholesterol was 160$\pm$24mg/이 and mean plasma triglyceride was 68$\pm$25mg/dl. Plasma fatty acids were mostly composed of linoleic, palmitic and oleic acids, while palmitic, stearic and arachidonic acids were high in RBC membrane. Plasma triglyceride showed positive correlation with BMI. Among dietary fatty acids, arachidonic acid, EPA and DHA showed negative correlation with plasma total cholesterol. Plasma triglyceride levels were negatively correlated with dietary arachidonic acid, plasma n-6 fatty acids and plasma polyunsaturated fatty acids. Dietary EPA and DHA levels were positively correlated with plasma EPA, dietary n-3/n-6 ratio were positively correlated with plasma n-3 fatty acids and n-3/n-6 ratio. Highly significant correlations were shown between the levels in plasma and RBC for several fatty acids.