• Bulletin of the Korean Chemical Society
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• 제33권1호
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• pp.199-203
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• 2012

A modified sol-gel method and $N_2$-plasma treatment were used to prepare bulk and surface doped N-$TiO_2$, respectively. XRD, TEM, UV-vis spectroscopy, $N_2$ adsorption, Elemental Analyzer, Photoluminescence, and XP spectra were used to characterize the prepared $TiO_2$ samples. The N doping did not change the phase composition and particle sizes of $TiO_2$ samples, but increased the visible light absorption. The photocatalytic activities were tested in the degradation of an aqueous solution of a reactive dyestuff, methylene blue, under visible light. The photocatalytic activity of surface doped N-$TiO_2$ prepared by $N_2$-plasma was much higher than that of bulk doped N-$TiO_2$ prepared by sol-gel method. The possible mechanism for the photocatalysis was proposed.

• The Korean Journal of Ecology
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• 제26권2호
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• pp.71-74
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• 2003

Effects of nitrogen addition on the growth of Indigofera pseudo-tinctoria (Leguminosae) in the waste landfill site was investigated. Nitrogen fertilization in the nitrogen poor soils of waste landfill may influence the growth of nitrogen fixing plants beneficially or detrimentally. When I. pseudo-tinctoria was fertilized with three different levels of nitrogen, the coverage of plants treated with 46 g N/$m^2$ and 460 g N/$m^2$ was significantly less than that of plants treated with 23 g N/$m^2$. The growth rates of plant height treated with 46 g N/$m^2$ and 460 g N/$m^2$ were significantly less than those of plants treated with 23 g N/$m^2$. The growth rates of plant diameter treated with 46 g N/$m^2$ and 460 g N/$m^2$ were significantly less than those of plants treated with 23 g N/$m^2$. Dry weights of whole plants in control sites were higher than those of all the others nitrogen treatment sites. Nodule numbers were higher in control plants than those of plants in all the other nitrogen treatment sites. It is suggested that nitrogen fertilizer addition over 23 g N/$m^2$ affect the growth of some nitrogen fixing plants, such as I. pseudo-tinctoria, negatively.

• International Journal of Oral Biology
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• 제43권2호
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• pp.83-91
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• 2018

Nonthermal atmospheric plasma has been studied for its many biomedical effects, such as tooth bleaching, wound healing, and coagulation. In this study, the effects of dentinal tubules occlusion were investigated using fluoride-carboxymethyl cellulose (F-CMC) gel, nano-sized hydroxyapatite (n-HA), and nonthermal atmospheric plasma. Human dentin specimens were divided to 5 groups (group C, HA, HAF, HAP, and HAFP). Group HA was treated with n-HA, group HAF was treated with n-HA after a F-CMC gel application, group HAP was treated with n-HA after a plasma treatment and group HAFP was treated with n-HA after a plasma and F-CMC gel treatment. The occlusion of dentinal tubules was investigated using scanning electron microscopy (SEM) and energy dispersive x-ray spectroscopy (EDS), which shows Ca/P ratio. In the EDS results, a higher Ca/P ratio was shown in the groups including n-HA than in the control group. The specimens of group HAP and HAFP had a higher Ca/P ratio in retentivity. In the SEM results, there was not a significant difference in the amount of times applied. Therefore, this study suggests F-CMC gel and n-HA treatment using nonthermal atmospheric plasma will be a new treatment method for decreasing hypersensitivity.

• 한국초지조사료학회지
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• 제36권3호
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• pp.199-204
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• 2016

The objective of this study was to determine the effect of nitrification inhibitor dicyandiamide (DCD) and urease inhibitor hydroquinone (HQ) on ammonia ($NH_3$) and nitrous oxide ($N_2O$) emission from pig slurry applied to Timothy (Phleum pretense L.) sward. The daily emission of ammonia ($NH_3$) and nitrous oxide ($N_2O$) was monitored for 9 days in three different treatments; 1) control (only pig slurry application), 2) DCD treatment (pig slurry + DCD), and 3) HQ treatment (pig slurry + HQ). Most $NH_3$ emission occurred after 4~5 days in three treatments. Total $NH_3$ emission, expressed as a cumulative amount throughout the measurement time, was $1.33kg\;N\;ha^{-1}$ in the control. The DCD and HQ treatment decreased total $NH_3$ emission by 16.3% and 25.1%, respectively, compared to the control. Total $N_2O$ emission in the control was $47.1g\;N\;ha^{-1}$. The DCD and HQ treatment resulted in a reduction of 67.9% and 41.8% in total $N_2O$ emission, respectively, compared to the control. The present study clearly indicated that nitrification and urease inhibitor exhibited positive roles in reducing N losses through $NH_3$ and $N_2O$ emission.

• 환경위생공학
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• 제18권3호통권49호
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• pp.69-77
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• 2003

The present time, water hyacinth(Eichhornia crassipes) was widely used for a purification of a polluted lake, livestock wastewater and sewage wastewater treatment. This study was conducted to evaluate the propriety of sewage wastewater treatment by water hyacinth(Eichhornia crassipes). On the study of optimal cultivation density, 3 kg/m$^2$ was selected for the most suitable initial cultivation density through the BOD, T-N and T-removal efficiency. In experiment of purification capacity, hyacinth(Eichhornia crassipes) removed the 267.2 mg BOD/kg · day, 72 mg T-N/kg · day and 8.6 mg T-P/kg · day at 30 operation days respectively. The result showed that hyacinth(Eichhornia crassipes) could be used for recovery of eutrophic lake effectively. In the test of optimal HRT(hydraulic retention time), 9 days was selected with the suitable HRT, and BOD, T-N and T-P were removed with 75%, T-N 88% and T-P 97% respectively.

• 대한약학회:학술대회논문집
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• 대한약학회 2003년도 Proceedings of the Convention of the Pharmaceutical Society of Korea Vol.1
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• pp.310.2-311
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• 2003

The effects of differences in the rate and composition of intravenous fluid replacement for urine loss on the pharmacokinetics and pharmacodynamics of torasemide were evaluated using rabbits as the animal model. Each rabbit received 2-h constant intravenous infusion of 1 mg/kg ∼ 1 of torasemide with 0％ replacement (treatment I, n = 6), 50％ replacement (treatment II, n = 9), and 100％ replacement with lactated Ringer's solution (treatment III, n = 8) as well as with 100％ replacement with 5％ dextrose in water(D-5-W, treatment IV, n=6). (omitted)

• 열처리공학회지
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• 제23권5호
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• pp.269-276
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• 2010

This study has been carried out to the low temperature plasma nitriding treatment on the mechanical properties of stainless steel at temperature range between $400^{\circ}C$ and $500^{\circ}C$. It was found that there was precipitated to free CrN matrix below $400^{\circ}C$ and there was precipitated S-phase of STS 316L, ${\varepsilon}$-phase of STS 409L and ${\alpha}N$-phase of STS 420J2. STS 316L has formed relatively abundant CrN phase and ${\gamma}^{\prime}-Fe_4N$ phase at $500^{\circ}C$, alternatively STS 409L and STS 420J2 were more deeply nitrided than STS 316L at $500^{\circ}C$.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.62-62
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• 2015

In this study, we study the effects of CF4 plasma treatment on the characteristics of enhancement mode (E-mode) AlGaN/GaN high electron mobility transistors (HEMTs). The CF4 plasma is generated by inductively coupled plasma reactive ion etching (ICP-RIE) system. The CF4 gas is decomposed into fluorine ions by ICP-RIE and then fluorine ions will effect the AlGaN/GaN interface to inhibit the electron transport of two dimension electron gas (2DEG) and increase channel resistance. The CF4 plasma method neither like the recessed type which have to utilize Cl2/BCl3 to etch semiconductor layer nor ion implantation needed high power to implant ions into semiconductor. Both of techniques will cause semiconductor damage. In the experiment, the CF4 treatment time are 0, 50, 100, 150, 200 and 250 seconds. It was found that the devices treated 100 seconds showed best electric performance. In order to prove fluorine ions existing and CF4 plasma treatment not etch epitaxial layer, the secondary ion mass spectrometer confirmed fluorine ions truly existing in the sample which treatment time 100 seconds. Moreover, transmission electron microscopy showed that the sample treated time 100 seconds did not have etch phenomena. Atomic layer deposition is used to grow Al2O3 with thickness 10, 20, 30 and 40 nm. In electrical measurement, the device that deposited 20-nm-thickness Al2O3 showed excellent current ability, the forward saturation current of 210 mA/mm, transconductance (gm) of 44.1 mS/mm and threshold voltage of 2.28 V, ION/IOFF reach to 108. As IV concerning the breakdown voltage measurement, all kinds of samples can reach to 1450 V.

• 한국재료학회지
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• 제27권12호
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• pp.699-704
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• 2017

Recently, the use of an aluminum nitride(AlN) buffer layer has been actively studied for fabricating a high quality gallium nitride(GaN) template for high efficiency Light Emitting Diode(LED) production. We confirmed that AlN deposition after $N_2$ plasma treatment of the substrate has a positive influence on GaN epitaxial growth. In this study, $N_2$ plasma treatment was performed on a commercial patterned sapphire substrate by RF magnetron sputtering equipment. GaN was grown by metal organic chemical vapor deposition(MOCVD). The surface treated with $N_2$ plasma was analyzed by x-ray photoelectron spectroscopy(XPS) to determine the binding energy. The XPS results indicated the surface was changed from $Al_2O_3$ to AlN and AlON, and we confirmed that the thickness of the pretreated layer was about 1 nm using high resolution transmission electron microscopy(HR-TEM). The AlN buffer layer deposited on the grown pretreated layer had lower crystallinity than the as-treated PSS. Therefore, the surface $N_2$ plasma treatment on PSS resulted in a reduction in the crystallinity of the AlN buffer layer, which can improve the epitaxial growth quality of the GaN template.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.24-25
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• 2008

The effect of heat treatment in $HfO_2$ as charge trap with $SiO_2/Si_3N_4/SiO_2$ as tunnel oxide layer in capacitors has been investigated. Rapid thermal annealing (RTA) were carried out at the temperature range of 600 - $900^{\circ}C$. It is found that all devices carried out heat treatment have large threshold voltage shift Especially, device performed heat treatment at $900^{\circ}C$ has been confirmed the largest memory window. Also, Threshold voltage shift of device used conventional $SiO_2$ as tunnel oxide layer was smaller than that with $SiO_2/Si_3N_4/SiO_2$.