• 제목/요약/키워드: $N_2$ generator

검색결과 197건 처리시간 0.027초

FREE CYCLIC CODES OVER FINITE LOCAL RINGS

  • Woo, Sung-Sik
    • 대한수학회보
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    • 제43권4호
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    • pp.723-735
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    • 2006
  • In [2] it was shown that a 1-generator quasi-cyclic code C of length n = ml of index l over $\mathbb{Z}_4$ is free if C is generated by a polynomial which divides $X^m-1$. In this paper, we prove that a necessary and sufficient condition for a cyclic code over $\mathbb{Z}_pk$ of length m to be free is that it is generated by a polynomial which divides $X^m-1$. We also show that this can be extended to finite local rings with a principal maximal ideal.

제곱근 회로를 이용한 온도와 공급 전압에 둔감한 CMOS 정전류원 (A temperature and supply insensitive CMOS current reference using a square root circuit)

  • 이철희;손영수;박홍준
    • 전자공학회논문지C
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    • 제34C권12호
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    • pp.37-42
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    • 1997
  • A new temperature and supply-insensitive CMOS current reference circuit was designed and tested. Te temperature insensuitivity was achieved by eliminating the mobility dependence term through the multiplication of two current components, one which is proportional to mobility and the other which is inversely proportional to mobility, by using a newly designed CMOS square root circuit. The CMOS sqare root circuit was derived from its bipolar counterpart by operating the MOS transistors in the subthreshold region. The supply insensitivity was achieved by using an internal voltage generator. Te test chip was designed ans sent out for fabrication by using a 2.mu.m double-poly double-metal n-well CMOS technology. When an external voltage source was used for the square root circuit, the maximum variation and the average temperature sensitivity were measured to be 3% and 21.4ppm/.deg.C, respectively, for the temperature range of -15~130.deg.C. The maximum current variation with supply voltage was measured to be 3% within the commerical supply voltage range of 4.5~5.5V at 30.deg. C.

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CDIDF로기전된 비선형신형기에 의한 직유전동기의 속도제어 (Speed Control of DC Motor by a Nonlinear Compensator Describing the CDIDF)

  • Hyoung-Ki Lee;Hong-Gon Ha;Byung-Do Yoon
    • 대한전기학회논문지
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    • 제37권2호
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    • pp.130-137
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    • 1988
  • The technique of dual-input describing function's synthesis is introduced and the construction of a nonlinear compensator, based on this technique, is proposed. A nonlinear compensator, describing a complex DIDF depending upon amplitude of the second sinusoidal input signal only, is also proposed, where the second sinusoidal input signal is supplied to the nonlinear compensator by external generator. This compensator, connected in a closed loop of the PI speed control of DC motor, can improve the speed response in view instability limit cycle, low speed response and disturbance of the dynamic shift of the Nyquist's critical point -1 + j O. It is verified theoretically that the improvement of speed response of DC motor using the proposed compensator is achieved by means of the dynamic shift of the Nyquist's critical point on the complex plane, and the speed characterstics of DC motor is to be tested through experiment for its performance.

전렬계통의 합리적 운용제어에 관한 연구 (A Study on the Optimum Operational Control of Power System)

  • 정재길;박영문
    • 대한전기학회논문지
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    • 제33권10호
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    • pp.410-422
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    • 1984
  • This paper presents a new practical method for optimal active and reactive power control for the economic operation in electrical power system, and the programs are developed for digital computer solution. The major features and techniques of this paper are as follows: 1) The method is presented for finding the equivalent active power balance equation applying the sparse Jacobian matrix of power flow equation instead of using B constant as active power balance equation considering transmission loss, and thus for determining directly optimal active power allocation berween generator unitw satisfying the equality and inequality constraints. 2) The method is proposed for solving directly the optimum economim dispatch problem without using gradient method and penalty function for both active and reactive power control. As a result, the computing time are reduced and convergence characteristic is remarkably improved. 3) Unlike most of conventional methods which adopt the transmission loss as a objective function for reactive power control, the total fuel cost of themal power plant is adopted as objective function for both active and reactive power control. consequently, more reasonable and economic profit can be achieved.

최소거리가 5인 이진 순회부호의 최소거리에 관한 새로운 증명 (New Proof of Minimum Distance for Binary Cyclic Codes with $d_{min}$=5)

  • 노종선
    • 한국통신학회논문지
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    • 제25권10A호
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    • pp.1576-1581
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    • 2000
  • 부호길이가 $2^{n}-1$이고 생성다항식이 g(x)=$m_1(x)m_{d}(x)$인 이진 순회부호에서 최소거리가 5가 되기 위한 조건은 $x^{d}$가 APN 함수라는 것으로 이는 이미 알려진 내용인데 이에 관한 새로운 증명을 제시하였다.

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Spinal cord stimulation in chronic pain: technical advances

  • Isagulyan, Emil;Slavin, Konstantin;Konovalov, Nikolay;Dorochov, Eugeny;Tomsky, Alexey;Dekopov, Andrey;Makashova, Elizaveta;Isagulyan, David;Genov, Pavel
    • The Korean Journal of Pain
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    • 제33권2호
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    • pp.99-107
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    • 2020
  • Chronic severe pain results in a detrimental effect on the patient's quality of life. Such patients have to take a large number of medications, including opioids, often without satisfactory effect, sometimes leading to medication abuse and the pain worsening. Spinal cord stimulation (SCS) is one of the most effective technologies that, unlike other interventional pain treatment methods, achieves long-term results in patients suffering from chronic neuropathic pain. The first described mode of SCS was a conventional tonic stimulation, but now the novel modalities (high-frequency and burst), techniques (dorsal root ganglia stimulations), and technical development (wireless and implantable pulse generator-free systems) of SCS are becoming more popular. The improvement of SCS systems, their miniaturization, and the appearance of new mechanisms for anchoring electrodes results in a significant reduction in the rate of complications and revision surgeries, and the appearance of new waves of stimulation allows not only to avoid the phenomenon of addiction, but also to improve the long-term results of chronic SCS. The purpose of this review is to describe the current condition of SCS and up-to-date technical advances.

방사면역치료용 $^{188}Re$ 표지 항체의 안정성과 안정제의 효과 (Stability of $^{188}Re$ Labeled Antibody for Radioimmunotherapy and the Effect of Stabilizing Agents)

  • 장영수;김보광;정재민;정준기;이승진;이동수;이명철
    • 대한핵의학회지
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    • 제36권3호
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    • pp.195-202
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    • 2002
  • 목적: 베타입자 방출 핵종을 표지한 항체를 임상적으로 이용하기 위해서는 높은 비방사능을 가지는 것이 중요하다. $^{188}W/^{188}Re$ 발생기를 사용하여 쉽게 얻을 수 있는 무담체 $^{188}Re$은 이런 목적에 이상적인 방사성 핵종이다. 하지만 높은 비방사능의 $^{188}Re$이 표지된 항체는 높은 베타 에너지(2.1 MeV)로 인한 불안정성이 문제가 된다. 우리는 $^{188}Re$이 표지된 항체의 안정성을 확보하기 위해 몇 가지 안정제가 미치는 영향에 대해서 조사하였다. 대상 및 방법: 환원시킨 단일클론항체(CEA79.4)에 stannous tartrate와 발생기에서 용출한 $^{188}Re-perrhenate$를 넣어 실온에서 2시간 반응시켰다. 각각의 방사화학적순도는 크로마토그라피를 써서 확인하였다. 표지된 항체에 사람 혈청 알부민(HSA)을 첨가(최종농도 2%)하고 ascorbic acid, ethanol, Tween 80 존재 하에서의 안정성을 각각 조사하였다. 결과: 표지된 항체의 비방사능은 $1.25{\sim}4.77MBq/{\mu}g$, 표지 효율은 $88{\pm}4%\;(n=12)$였다. 안정제로 ascorbic acid, ethanol, Tween 80을 첨가하였을 때 $N_2$ 존재 하에서 모든 경우에 10시간까지 안정하였으나, 공기와 접촉 시 10시간 후에 방사화학적순도는 각각 처음의 100, 45, 36%가 되었다. 과산화레늄(perrhenate)과 $^{188}Re-tartrate$의 증가가 주된 요인이었으며 콜로이드 형성은 모든 경우에 큰 영향을 끼치지 않았다. Ascorbic acid 첨가는 공기 중에서 perrhenate의 형성을 줄임으로서 항체의 안정성에 가장 많이 기여하였다. 결론: 높은 비방사능의 $^{188}Re$이 표지된 항체는 공기 중에 노출되었을 때 불안정하였으며, ascorbic acid 첨가시 안정성을 향상시킬 수 있었다.

흰쥐 대뇌피질 절편에서 허혈에 의한 Norepinephrine 유리에 있어서 Nitric Oxide의 영향 (Role of Nitric Oxide in Ischemia-evoked Release of Norepinephrine from Rat Cortex Slices)

  • 은영아;김동찬;조규박;김기원
    • The Korean Journal of Physiology and Pharmacology
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    • 제1권6호
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    • pp.673-679
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    • 1997
  • It has been generally accepted that glutamate mediates the ischemic brain damage, excitotoxicity, and induces release of neurotransmitters, including norepinephrine(NE), in ischemic milieu. In the present study, the role of nitric oxide(NO) in the ischemia-induced $[^3H]norepinephrine([^3H]NE)$ release from cortex slices of the rat was examined. Ischemia, deprivation of oxygen and glucose from $Mg^{2+}-free$ artificial cerebrospinal fluid, induced significant release of $[^3H]NE$ from cortex slices. This ischemia-induced $[^3H]NE$ release was significantly attenuated by glutamatergic neurotransmission modifiers. $N^G-nitro-L-arginine$ methyl ester(L-NAME), $N^G-monomethyl-L-arginine$ (L-NMMA) or 7-nitroindazole, nitric oxide synthase inhibitors attenuated the ischemia-evoked $[^3H]NE$ release. Hemoglobin, a NO chelator, and 5, 5- dimethyl-L-pyrroline-N-oxide(DMPO), an electron spin trap, inhibited $[^3H]NE$ release dose-dependently. Ischemia-evoked $[^3H]NE$ release was inhibited by methylene blue, a soluble guanylate cyclase inhibitor, and potentiated by 8-bromo-cGMP, a cell permeable cGMP analog, zaprinast, a cGMP phosphodiesterase inhibitor, and S-nitroso-N-acetylpenicillamine (SNAP), a nitric oxide generator. These results suggest that the ischemia-evoked $[^3H]NE$ release is mediated by NMDA receptors, and activation of NO system is involved.

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CMOS 소자로만 구성된 1V 이하 저전압 저전력 기준전압 발생기 (A Sub-1V Nanopower CMOS Only Bandgap Voltage Reference)

  • 박창범;임신일
    • 전기전자학회논문지
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    • 제20권2호
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    • pp.192-195
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    • 2016
  • 본 논문에서는 저항과 BJT를 사용하지 않고 sub-threshold 영역에서 동작하는 저전압, 저전력 기준전압 발생기를 설계하였다. CTAT 전압 발생기는 두 개의 NMOS 트랜지스터를 이용하여 구성하였고, 충분한 영역의 CTAT 전압을 발생시키기 위해 바디 바이어스 회로를 이용하였다. PTAT 전압 발생기는 PTAT 전압을 생성하기 위해 MOS 트랜지스터 입력 쌍의 서로 다른 사이즈 비를 이용하는 차동증폭기 형태로 구성하였다. 제안한 회로는 $0.18-{\mu}m$ 표준 CMOS 공정으로 설계되었다. 시뮬레이션 결과로 290mV의 출력 기준 전압을 가지며, -$20^{\circ}C$ 에서 $120^{\circ}C$의 온도 변화에서 92 ppm/$^{\circ}C$의 전압 변화 지수와 전원전압 0.63V에서 15.7nW의 소모 전력을 갖는 것을 확인하였다.

Photo-induced Electrical Properties of Metal-oxide Nanocrystal Memory Devices

  • Lee, Dong-Uk;Cho, Seong-Gook;Kim, Eun-Kyu;Kim, Young-Ho
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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    • pp.254-254
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    • 2011
  • The memories with nano-particles are very attractive because they are promising candidates for low operating voltage, long retention time and fast program/erase speed. In recent, various nano-floating gate memories with metal-oxide nanocrystals embedded in organic and inorganic layers have been reported. Because of the carrier generation in semiconductor, induced photon pulse enhanced the program/erase speed of memory device. We studied photo-induced electrical properties of these metal-oxide nanocrystal memory devices. At first, 2~10-nm-thick Sn and In metals were deposited by using thermal evaporation onto Si wafer including a channel with $n^+$ poly-Si source/drain in which the length and width are 10 ${\mu}m$ each. Then, a poly-amic-acid (PAA) was spin coated on the deposited Sn film. The PAA precursor used in this study was prepared by dissolving biphenyl-tetracarboxylic dianhydride-phenylene diamine (BPDA-PDA) commercial polyamic acid in N-methyl-2-pyrrolidon (NMP). Then the samples were cured at 400$^{\circ}C$ for 1 hour in N atmosphere after drying at 135$^{\circ}C$ for 30 min through rapid thermal annealing. The deposition of aluminum layer with thickness of 200 nm was followed by using a thermal evaporator, and then the gate electrode was defined by photolithography and etching. The electrical properties were measured at room temperature using an HP4156a precision semiconductor parameter analyzer and an Agilent 81101A pulse generator. Also, the optical pulse for the study on photo-induced electrical properties was applied by Xeon lamp light source and a monochromator system.

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