• Bulletin of the Korean Chemical Society
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• 제24권5호
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• pp.583-592
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• 2003

The gas phase identity nucleophilic substitution reactions of halide anions (X = F, Cl, Br) with cyclopentadienyl halides (1) are investigated at the B3LYP/6-311+G**, MP2/6-311+G** and G2(+)MP2 levels involving five reaction pathways: σ-attack $S_N2$, β-$S_N$2'-syn, β-$S_N$2'-anti, γ-$S_N$2'-syn and γ-$S_N$2'-anti paths. In addition, the halide exchange reactions at the saturated analogue, cyclopentyl halides (2), and the monohapto circumambulatory halide rearrangements in 1 are also studied at the same three levels of theory. In the σ-attack $S_N2$ transition state for 1 weak positive charge develops in the ring with X = F while negative charge develops with X = Cl and Br leading to a higher energy barrier with X = F but to lower energy barriers with X = Cl and Br than for the corresponding reactions of 2. The π-attack β-$S_N$2' transition states are stabilized by the strong $n_C-{\pi}^{*}_{C=C}$ charge transfer interactions, whereas the π-attack γ-$S_N$2' transition states are stabilized by the strong $n_C-{\sigma}^{*}_{C-X}$ interactions. For all types of reaction paths, the energy barriers are lower with X = F than Cl and Br due to the greater bond energy gain in the partial C-X bond formation with X = F. The β-$S_N$2' paths are favored over the γ-$S_N$2' paths only with X = F and the reverse holds with X = Cl and Br. The σ-attack $S_N2$ reaction provides the lowest energy barrier with X = Cl and Br, but that with X = F is the highest energy barrier path. Activation energies for the circumambulatory rearrangement processes are much higher (by more than 18 kcal $mol^{-1}$) than those for the corresponding $S_N2$ reaction path. Overall the gas-phase halide exchanges are predicted to proceed by the σ-attack $S_N2$ path with X = Cl and Br but by the β-$S_N$2'-anti path with X = F. The barriers to the gas-phase halide exchanges increase in the order X = F < Br < Cl, which is the same as that found for the gas-phase identity methyl transfer reactions.

• 한국산업융합학회 논문집
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• 제15권2호
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• pp.49-54
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• 2012

With the improvement of industrial society, the high quality electrical energy, simplification of operation and maintenance, ensuring reliability and safety are being required. This paper reviews a basic data of the surface discharge characteristics for teflon resin in not only pure $N_2$, $N_2:O_2$ mixture gas and Dry-Air as being focused on environmentally friendly insulating Gas also $SF_6$. Used electrodes are Knife to Knife. With the changing distance of electrodes and pressure, we can find it, surface discharge voltages and surface dielectric strengths, respectively. Surface discharge Voltages of $N_2:O_2=80:20$ mixture gas are more higher than the $N_2:O_2$ Mixture gases.

• 한국전기전자재료학회논문지
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• 제17권11호
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• pp.1246-1251
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• 2004

This paper is investigated about the effect of carrier gas type and the humidity for generating hydrogen gas. The vibration of the water surface is more powerful with increasing applied voltage. In this experimental reactor which is made of multi-needle and plate, the maximum acquired hydrogen production rate is about 3500 ppm. In the experimental result of generating hydrogen gas by non-thermal plasma reactor, the rate of generating hydrogen gas is different with what kind of carrier gas is. We used two types of carrier gas, such as $N_2$ and He. $N_2$ as carrier gas is more efficient to generate hydrogen gas than He because $N_2$ is reacted with $O_2$, which is made from water dissociation. In comparison with water droplet by humidifier and without water droplet by humidifier, the generation of hydrogen gas is decreased in case of water droplet by humidifier. That is the result that the energy for water dissociation is reduced on water surface because a part of plasma energy is absorbed at the small water molecular produced from humidifier.

• 한국재료학회지
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• 제25권10호
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• pp.543-546
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• 2015

$TiO_2$ nanowires were grown by thermal oxidation of TiO powder in an oxygen and nitrogen gas environment at $1000^{\circ}C$. The ratio of $O_2$ to $N_2$ in an ambient gas was changed to investigate the effect of the gas ratio on the growth of $TiO_2$nanowires. The oxidation process was carried out at different $O_2$/$N_2$ ratios of 0/100, 25/75, 50/50 and 100/0. No nanowires were formed at $O_2$/$N_2$ ratios of less than 25/75. When the $O_2$/$N_2$ ratio was 50/50, nanowires started to form. As the gas ratio increased to 100/0, the diameter and length of the nanowires increased. The X-ray diffraction pattern showed that the nanowires were $TiO_2$ with a rutile crystallographic structure. In the XRD pattern, no peaks from the anatase and brookite structures of $TiO_2$were observed. The diameter of the nanowires decreased along the growth direction, and no catalytic particles were detected at the tips of the nanowires which suggests that the nanowires were grown with a vapor-solid growth mechanism.

• Applied Science and Convergence Technology
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• 제23권3호
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• pp.139-144
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• 2014

GaN deposition equipment and processes for the fabrication of white LEDs (Light Emitting Diode) using MOCVD (Metal Organic Chemical Vapor Deposition) were numerically modeled to analyze the effects of a reactive gas introduction strategy. The source gases, TMGa and $NH_3$, were injected from a shower head at the top of the chamber; the carrier gases, $H_2$ or $N_2$, were introduced using two types of injection structures: vertical and horizontal. Wafers sat on the holder at a radial distance between 100 mm and 150 mm. The non-uniformity of the deposition rates for vertical and horizontal injection were 4.3% and 3.1%, respectively. In the case of using $H_2$ as a carrier gas instead of $N_2$, the uniform deposition zone was increased by 20%.

• JSTS:Journal of Semiconductor Technology and Science
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• 제1권2호
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• pp.95-102
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• 2001

Hafnium oxide thin films for gate dielectric were deposited at $300^{\circ}C$ on p-type Si (100) substrates by plasma enhanced chemical vapor deposition (PECVD) and annealed in $O_2$ and $N_2$ ambient at various temperatures. The effect of hydrogen treatment in 4% $H_2$ at $350^{\circ}C$ for 30 min on the electrical properties of $HfO_2$for gate dielectric was investigated. The flat-band voltage shifts of $HfO_2$capacitors annealed in $O_2$ambient are larger than those in $N_2$ambient because samples annealed in high oxygen partial pressure produces the effective negative charges in films. The oxygen loss in $HfO_2$films was expected in forming gas annealed samples and decreased the excessive oxygen contents in films as-deposited and annealed in $O_2$ or $N_2$ambient. The CET of films after hydrogen forming gas anneal almost did not vary compared with that before hydrogen gas anneal. Hysteresis of $HfO_2$films abruptly decreased by hydrogen forming gas anneal because hysteresis in C-V characteristics depends on the bulk effect rather than $HfO_2$/Si interface. The lower trap densities of films annealed in $O_2$ambient than those in $N_2$were due to the composition of interfacial layer becoming closer to $SiO_2$with increasing oxygen partial pressure. Hydrogen forming gas anneal at $350^{\circ}C$ for samples annealed at various temperatures in $O_2$and $N_2$ambient plays critical role in decreasing interface trap densities at the Si/$SiO_2$ interface. However, effect of forming gas anneal was almost disappeared for samples annealed at high temperature (about $800^{\circ}C$) in $O_2$ or $N_2$ambient.

• 한국가스학회지
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• 제21권2호
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• pp.1-9
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• 2017

최근 석탄층 메탄가스(Coalbed Methane, CBM)의 회수증진을 위해 석탄층에 $CO_2$나 $N_2$ 가스를 주입하는 ECBM (enhanced coalbed methane recovery)공법이 주목받고 있다. ECBM공법은 일반적인 생산기술인 탈수(dewatering)공법에 비해 회수율이 높지만 주입가스의 특성에 따라 메탄가스의 생산 효율이 다르므로, 이를 고려한 주입가스의 혼합 비율 분석이 필요하다. 본 연구에서는 ECBM공법에서 주입가스의 혼합 비율이 메탄가스 회수에 미치는 영향을 분석하고자, CBM 저류층 모델을 구축하고 주입가스의 혼합비율에 따른 메탄가스 회수량 분석과 경제성 평가를 수행하였다. 그 결과, ECBM공법 적용 시 탈수공법을 적용하였을 때 보다 약 2배의 회수율 향상을 보였으며, 혼합가스 주입 시 $CO_2$ 10%와 $N_2$ 90%일 때 메탄가스의 회수량이 가장 높게 나타났다. 그러나 탄소배출권 거래이익, 주입가스의 비용 및 재생산된 $N_2$ 가스 처리비용 등을 고려한 경제성 평가 결과, 주입가스의 혼합비율이 $CO_2$ 20%와 $N_2$ 80%일 때 최종생산이익이 가장 높게 나타남을 확인하였다. 따라서 향후 ECBM 공법 적용 시 메탄가스의 회수율뿐만 아니라 경제성을 고려한 기준으로 주입가스의 혼합비율을 설계해야 한다.

• 열처리공학회지
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• 제17권2호
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• pp.87-93
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• 2004

Nitrocarburizing was carried out with various $CH_4$ gas composition with 4 torr gas pressure at $570^{\circ}C$ for 3 hours and post oxidation was carried out with 100% $O_2$ gas atmosphere with 4 torr at different temperatures for various time. In the case of plasma nitrocarburizing, It is that the ratio of ${\varepsilon}-Fe_{2-3}$(N, C) and ${\gamma}^{\prime}-Fe_4$(C, N), which comprise the compound layer phase, depend on concentrations of $N_2$ gas and $CH_4$ such that when the concentration of $N_2$ and $CH_4$ increased, the ratio of ${\gamma}^{\prime}-Fe_4$(C, N) decreased, but the ratio of ${\varepsilon}-Fe_{2-3}$(N, C) increased. The thickness of compound layer consistently increased as gas concentration increased regardless of $N_2$ and $CH_4$ expect when the concentration of $CH_4$ was 3.5 volume%, it decreased insignificantly. When oxidizing for 15min in the temperature range of $460{\sim}570{^\circ}C$, the study found small amount of $Fe_3O_4$ at the temperature of $460{^\circ}C$ and also found that amounts of $Fe_2O_3$. and $Fe_3O_4$ on the surface and amount of ${\gamma}^{\prime}-Fe_4$(C, N) in the compound layer increased as the increased over $460^{\circ}C$, but the thickness of the compound layer decreased. Corrosion resistance was influenced by oxidation times and temperature.

• 조명전기설비학회논문지
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• 제25권2호
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• pp.131-136
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• 2011

This paper aims to examine the possibility of using an environmentally friendly $N_2$ as an alternative gas to $SF_6$. For this purpose, we have investigated breakdown characteristics of $N_2$ under impulse voltages in a quasi-uniform electric field gap. The 1.2/50[${\mu}s$] lightning impulse voltage, switching impulse voltages and oscillatory impulse voltages were applied at the test gap. The electric field utilization factor ranges from 0.5 to 0.8. The experimental data of $SF_6$ and $N_2$ acquired in the same experimental condition are presented in parallel for comparison. As a result, the breakdown voltages in $SF_6$ and $N_2$ are linearly increased with the gas pressure, also the breakdown voltages in $N_2$ are increased with increasing the gap distance and electric field utilization factor. The positive breakdown voltages are higher than the negative breakdown voltages. The nagative basic lightning impulse withstand level of 150[kV] in $N_2$ of about 0.5[MPa] is nearly equal to that in $SF_6$ of 0.15[MPa]. It is seen from the results obtained in this work that $N_2$ can be used as an eco-friendly alternative gas to $SF_6$ in distribution power equipment.

• 한국유기농업학회지
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• 제8권2호
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• pp.89-96
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• 2000

To reduce loss of nitrogen and generation of ammonia gas during composting, poultry manure and sawdust were mixed at the equivalent ratio and calcium chloride, fused superphosphate and vermiculite were added. Ammonia and sulfurous gas during composting, and NH4-N and NO3-N contents of composts were periodically measured. With the treatments of 0.5∼3% calcium chloride and 3% fused superphosphate, ammonia and sulfurous gas during composting significantly decreased, and especially generation of gases sharply reduced and a increase of calcium chlorde. Extractable NH4-N content in composts treasted with calcium chloride and fused superphosphate were high but extractable NO3-N markedly decreased. In conclusion, the results suggest that it is necessary the additon of 1∼3% calcium chloride or 3% fused superphosphate to reduce loss of nirogen and generation of offensive odor during composting of poultry manure mixed with sawdust.