• Journal of the Korean Institute of Telematics and Electronics
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• v.16 no.1
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• pp.19-23
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• 1979

$S_nO_2$ and $Z_nO$ based semiconductor combustible gas sensors have been fabricated and measured their charactcnstics. Adding about 0.5 wt % $P_dCf_2$ to the mixture of $S_n0_2$ and $Z_nO$ improved the sensitivity. The devices were fired for one hoar in air in the tewerature range of $400^{\circ}C$ to $1000^{\circ}C$. Their electrical conductivity was changed by t he change of atmosphenc pressure around then.

• Journal of the Korean Ceramic Society
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• v.23 no.5
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• pp.61-66
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• 1986

The gas mixtures ($H_2$/$N_2$, He/$N_2$) having a high thermal conductivity allow the heat generated by the nitriding exotherm to be dissipated from the compact in to the nitriding atmosphere permitting a more accurate control of temperature and produces a more uniform microstructure. In order to observe the effect of the mixed gas atmosphere on the microsturcture of RBSN. the specimen was nitrided in the mixed gas atmosphere which was containe up to 50vol% $H_2$ or He for 0-12 hrs at 135$0^{\circ}C$. The addition of hydrogen to nitrogen gas resulted in the growth of a-needle at the early stage of nitrding increase of the reaction rate and a finer and more uniform microstructure. in case of the addition of helium the behaviour of reaction was similar to the one with pure nitrogen. As the amount of helium was increased a coarse microstructure was formed.

• Journal of the Korean Society of Manufacturing Technology Engineers
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• v.8 no.5
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• pp.115-120
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• 1999

This research is a described result of experimental for the parameter's effecting the microhole machining by Nd-Yag laser, The parameters are energy, pulse interval time a kin of assisting gas and its pressure. The result reveals that parameter value of energy 0.08J, pulse 20Hz, interval time of 300 microseconds could be a good machining condition to make upper microhoel that is the diameter range of 50-70${\mu}{\textrm}{m}$. At tat time the assistant gas such air, $O_2$, Ar $N_2$, was appelied. Assistant gas of air makes heat affected zone enlarge due to burning of material surface. Also it makes microhole irregular and damageable. Because of refusion caused by chemical reaction with $Al_2O_3$ ceramic material . The $O_2$(99.9%) has good characteristics to get good drilling and smooth surface on pressure of 0.2kgf/$\textrm{cm}^2$ but it is expensive. Ar, $N_2$ make material crack and burnning and proved that to be unappropriate but, Ar was a better than $N_2$.

• Tunnel and Underground Space
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• v.31 no.1
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• pp.41-51
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• 2021

The hydraulic fracturing developed to improve permeability of tight reservoir is one of key stimulation technologies for developing unconventional resources such as shale gas and deep geothermal energy. The experimental study was conducted to improve disadvantage of hydraulic fracturing which has simple fracture pattern and poor fracturing efficiency. The fracturing experiments was conducted for tight rock using various fracturing fluids, water, N2, and CO2 and the created fracture pattern and fracturing efficiency was analyzed depending on fracturing fluids. The borehole pressure increased rapidly and then made fractures for hydraulic fracturing with constant injection rate, however, gas fracturing shows slowly increased pressure and less fracture pressure. The 3D tomography technic was used to generate images of induced fracture using hydraulic and gas fracturing. The stimulated reservoir volume (SRV) was estimated increment of 5.71% (water), 12.72% (N2), and 43.82% (CO2) respectively compared to initial pore volume. In addition, permeability measurement was carried out before and after fracturing experiments and the enhanced permeability by gas fracturing showed higher than hydraulic fracturing. The fracture conductivity was measured by increasing confining stress to consider newly creating fracture and closing induced fracture right after fracturing. When the confining stress was increased from 2MPa to 10MPa, the initial permeability was decreased by 89% (N2) and 50% (CO2) respectively. This study shows that the gas fracturing makes more permeability enhancement and less reduction of induced fracture conductivity than hydraulic fracturing.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.05a
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• pp.6.2-8
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• 1996

The NO$_2$ GAS-detection characteristic of CuTBT (Copper-tetra-tert-butylphtha1ocyanine) LB films were investigated through a study of current-voltage (I-V) characteristics with a variation of number N of interdigital electrodes (N=1∼25). A concentration of 200ppm NO$_2$ gas was used. It was found that a conductance G increases monotonically as the number of interdigital electrode increases, and a sensitivity $\Delta$G ($\Delta$G=G$\_$gas//G$\_$air/) is at least higher than 50 and stable. As far as a sensitivity is concerned, the sensitivity when N=26 is greater than that when N=1 by 70 or so. It indicates that the number of interdigital electrodes affects the currents, sensitivity and stability.

• Journal of the Korean Society for Precision Engineering
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• v.6 no.1
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• pp.75-84
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• 1989

This paper deals with the effect of $N_2$ and $H_2$gas mixture ratio and ion-nitriding time in the corrosion fatigue fracture behavior of ion-nitrided SCM4 steel with notch subject to rotary bending stress. The specimens were treated rapid water cooling after ion-nitriding at $500^{\circ}C$ Torr for 1 hour and 3 hours in gas mixtures of 80% $N_2$and 50% $N_2$. The fatigue limit and the fracture strength of corrosion fatigue depended on $N_2$gas quantity and ion-nitriding time. The ion-nitrided specimens showed about 88 .approx. 158% increase in the fracture strength of corrosion fatigue in $10^6$ cycles than non-nitrided specimens. The corrosion failure is due to corrosion pitting of the surface, and the propargation of cracks started at the surface into the core.

• Journal of Korean Society of Environmental Engineers
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• v.30 no.12
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• pp.1281-1286
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• 2008

Nitrous oxide(N$_2$O) is well known as a greenhouse gas that contributes to the global warming (310 times more per molecule than carbon dioxide) and to the destruction of the ozone layer. The objective of this study is to estimate N$_2$O emission factor using an emission isolation flux chamber from municipal wastewater treatment plants. N$_2$O gas was analysed by GC/ECD with 6 port gas sampling valve. The results of this study were as follows. N$_2$O emission factor of 5-Stage process from Y wastewater treatment plants was lowest as 0.94 g-N$_2$O/kg-TN. And that of other processes were 2.65 g-N$_2$O/kg-TN for Activated sludge process, 9.30 g-N$_2$O/kg-TN for Denipho process, and 26.73 g-N$_2$O/kg-TN for Sequencing Batch Reactor process. We have known that 5-Stage process is most appropriate process to reduce greenhouse for municipal wastewater treatment plants.

• Journal of the Korean Society for Heat Treatment
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• v.9 no.3
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• pp.177-186
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• 1996

Surface alloying of Ti alloy by $CO_2$ laser is able to produce few hundred micrometers thick TiN or TiC surface-alloyed layer with high hardness on the substrate by injecting reaction gas($N_2$ or $CH_4$). Laser surface alloying by means of process control is in many applications essential in order to obtain predictable hardening layer. This research has been investigated the effect of such parameters on TiN and TiC gas alloying of Ti-6Al-4V alloy by $CO_2$ laser. The maximum surface hardness of TiN layer was obtained 1750Hv on the conditions of 0.8kW laser power, 0.8m/min scanning speed and 100% $N_2$ atmosphere. However, the maximum hardness of TiC formation layer after laser treatment was about 630Hv. As scanning speed was increased, the hardness and depth of these layers were decreased at constant laser power.

• Korean Journal of Materials Research
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• v.31 no.12
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• pp.697-703
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• 2021

Aluminum nitride having a dense hexagonal structure is used as a high-temperature material because of its excellent heat resistance and high mechanical strength; its excellent piezoelectric properties are also attracting attention. The structure and residual stress of AlN thin films formed on glass substrate using TFT sputtering system are examined by XRD. The deposition conditions are nitrogen gas pressures of 1 × 10^-2, 6 × 10^-3, and 3 × 10^-3, substrate temperature of 523 K, and sputtering time of 120 min. The structure of the AlN thin film is columnar, having a c-axis, i.e., a <00·1> orientation, which is the normal direction of the glass substrate. An X-ray stress measurement method for crystalline thin films with orientation properties such as columnar structure is proposed and applied to the residual stress measurement of AlN thin films with orientation <00·1>. Strength of diffraction lines other than 00·2 diffraction is very weak. As a result of stress measurement using AlN powder sample as a comparative standard sample, tensile residual stress is obtained when the nitrogen gas pressure is low, but the gas pressure increases as the residual stress is shifts toward compression. At low gas pressure, the unit cell expands due to the incorporation of excess nitrogen atoms.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.66 no.2
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• pp.370-378
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• 2017

A fluid model of 2D axis-symmetry based on inductively coupled plasma (ICP) reactor using $N_2/NH_3/SiH_4$ gas mixture has been developed for hydrogenated silicon nitride ($SiN_x:H$) deposition. The model was comprised of 62 species (electron, neutral, ions, and excitation species), 218 chemical reactions, and 45 surface reactions. The pressure (10~40 mTorr) and gas mixture ratio ($N_2$ 80~96 %, $NH_3$ 2~10 %, $SiH_4$ 2~10 %) were considered simulation variables and the input power fixed at 1000 W. Different distributions of electron, ions, and molecules density were observed with pressure. Although ionization rate of $SiH_2{^+}$ is higher than $SiH_3{^+}$ by electron direct reaction with $SiH_4$, the number density of $SiH_3{^+}$ is higher than $SiH_2{^+}$ in over 30 mTorr. Also, number density of $NH^+$ and $NH_4{^+}$ dramatically increased by pressure increase because these species are dominantly generated by gas phase reactions. The change of gas mixture ratio not affected electron density and temperature. With $NH_3$ and $SiH_4$ gases ratio increased, $SiH_x$ and $NH_x$ (except $NH^+$ and $NH_4{^+}$) ions and molecules are linearly increased. Number density of amino-silane molecules ($SiH_x(NH_2)_y$) were detected higher in conditions of high $SiH_x$ and $NH_x$ molecules density.