• Korean Journal of Materials Research
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• v.16 no.9
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• pp.543-549
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• 2006

Polyimides (PI) are treated with $He/O_2$ and $He/O_2/NF_3$ atmospheric pressure rf dielectric barrier discharge in order to investigate the roles of $NF_3$ that is one of the PI etching gases. Surface changes are analyzed by x-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), and contact angle measurement. The surface roughness of PI and the ratio of C=O, which is hydrophilic functional group, is more increased by $He/O_2/NF_3$ discharge than by $He/O_2$ discharge. The C=O species on the PI surface is increased up to 30 percent with rf power. The surface roughness of PI is increased from 0.4 to 11 nm with rf power. The water drop contact angles on PI, however, are reduced from $65^{\circ}\;to\;9^{\circ}$ by plasma treatment independently of $NF_3$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.58-62
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• 2003

Silicon carbide (SiC) was etched in a $NF_3/CH_4$ inductively coupled plasma. The etch process was modeled by using a neural network called generalized regression neural network (GRNN). For modeling, the process was characterized by a $2^4$ full factorial experiment with one center point. To test model appropriateness, additional test data of 16 experiments were conducted. Particularly, the GRNN predictive capability was drastically improved by a genetic algorithm (GA). This was demonstrated by an improvement of more than 80% compared to a conventionally obtained model. Predicted model behaviors were highly consistent with actual measurements. From the optimized model, several plots were generated to examine etch rate variation under various plasma conditions. Unlike the typical behavior, the etch rate variation was quite different depending on the bias power Under lower bias powers, the source power effect was strongly dependent on induced dc bias. The etch rate was strongly correated to the do bias induced by the gas ratio. Particularly, the etch rate variation with the bias power at different gas ratio seemed to be limited by the etchant supply.

• Proceedings of the Korean Radioactive Waste Society Conference
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• 2005.11b
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• pp.300-315
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• 2005

Recently plasma surface-cleaning or surface-etching techniques have been focused in the respect of decontamination of spent or used nuclear parts and equipment. In this study decontamination rate of metallic cobalt surface was experimentally investigated via its surface etching rate with a $CF_4-O_2$ mixed gas plasma and metallic surface wastes of cobalt oxides were simulated and decontaminated with $NF_3$ - Ar mixed gas plasma. Experimental results revealed that a mixed etchant gas with about $80{\%}\;CF_4-20{\%}\;O_2$ gives the highest reaction rate of cobalt disk and the rate reaches with a negative 300 DC bias voltage up to $0.43\;{\mu}m$/min at $380^{\circ}C$ and $20{\%}\;NF_3-80\%$ Ar mixed gas gives $0.2\;{\mu}m$/min of reaction rate of cobalt oxide film.

• Polymer(Korea)
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• v.35 no.2
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• pp.136-140
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• 2011

The plasma resistances of nitrile curable perfluoro elastomer (NT PFE) and peroxide curable PFE (PO PFE) after exposing to $NF_3$ and $O_2$ remote plasmas were investigated by analyzing weight loss and morphology of O-ring made of PFE. The compounds were designed following the typical formulations of O-ring/seal which were applied in semiconductor and LCD production site. They were blended by an open roll mill, and then, O-ring was finally made by hot press molding and oven curing. The weight loss was calculated and morphology was observed for each atmosphere and temperature by a digital weighing machine and SEM. As results, it was confirmed the weight loss and related morphology were meaningfully different according to the cure type of PFE, filler system, and the species of remote plasma.

• Analytical Science and Technology
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• v.19 no.6
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• pp.535-543
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• 2006

Being used widely in semiconductor and display manufacturing, $NF_3$ is internationally considered as one of the regulated compounds in emission. Numerous companies have been continuously trying to reduce the emissions of $NF_3$ to comply with the global environmental regulation. This work is made to report the destruction and removal efficiency (DRE) of electrically heated scrubbers and the use rate in process chambers installed in three main LCD manufacturing companies in Korea. As the measurement techniques for $NF_3$ emission, mass flow controlled helium gas was continuously supplied into the equipment by which scrubber efficiency is being measured. The partial pressures of $NF_3$ and helium were accurately measured for each sample using a mass spectrometer, as it is emitted from inlet and outlet of the scrubber system. The results show that the DRE value for electrically heated scrubbers installed before 2004 is less than 52 %, while that for the new scrubbers modified based on measurement by scrubber manufacturer has been sigificentely improved upto more than 95 %. In additon, we have confirmed the efficiency depends on such variables as the inlet gas flow rate, water content, heater temperature, and preventative management period. The use rates of $NF_3$ in process chambers were also affected by the process type. The use rate of radio frequency source chambers, built in the $1^{st}$ and $2^{nd}$ generation process lines, was determined to be less than 75 %. In addition, that of remote plasma source chambers for the $3^{rd}$ generation was measured to be aboove 95 %. Therefore, the combined application of improved scrubber and the RPSC process chamber to the semiconductor and display process can reduce $NF_3$ emmision by 99.95 %. It is optimistic that the mission for the reduction of greenhouse gas emission can be realized in these LCD manufacturing companies in Korea.

• Applied Science and Convergence Technology
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• v.27 no.1
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• pp.9-13
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• 2018

Samples of anodic oxide film used in semiconductor and display manufacturing processes were prepared at different electrolyte temperatures to investigate the corrosion resistance. The anodic oxide film was grown on aluminum alloy 6061 by using a sulfuric acid ($H_2SO_4$) electrolyte of 1.5 M at $0^{\circ}C$, $5^{\circ}C$, $10^{\circ}C$, $15^{\circ}C$, and $20^{\circ}C$. The insulating properties of the samples were evaluated by measuring the breakdown voltage, which gradually increased from 0.43 kV ($0^{\circ}C$) to 0.52 kV ($5^{\circ}C$), 1.02 kV ($10^{\circ}C$), and 1.46 kV ($15^{\circ}C$) as the electrolyte temperature was increased from $0^{\circ}C$ to $15^{\circ}C$, but then decreased to 1.24 kV ($20^{\circ}C$). To evaluate the erosion of the film by fluorine plasma, the plasma erosion and the contamination particles were measured. The plasma erosion was evaluated by measuring the breakdown voltage after exposing the film to $CF_4/O_2/Ar$ and $NF_3/O_2/Ar$ plasmas. With exposure to $CF_4/O_2/Ar$ plasma, the breakdown voltage of the film slightly decreased at $0^{\circ}C$, by 0.41 kV; however, the breakdown voltage significantly decreased at $20^{\circ}C$, by 0.83 kV. With exposure to $NF_3/O_2/Ar$ plasma, the breakdown voltage of the film slightly decreased at $0^{\circ}C$, by 0.38 kV; however, the breakdown voltage significantly decreased at $20^{\circ}C$, by 0. 77 kV. In addition, for the entire temperature range, the breakdown voltage decreased more when sample was exposed to $NF_3/O_2/Ar$ plasma than to $CF_4/O_2/Ar$ plasma. The decrease of the breakdown voltage was lower in the anodic oxide film samples that were grown slowly at lower temperatures. The rate of breakdown voltage decrease after exposure to fluorine plasma was highest at $20^{\circ}C$, indicating that the anodic oxide film was most vulnerable to erosion by fluorine plasma at that temperature. Contamination particles generated by exposure to the $CF_4/O_2/Ar$ and $NF_3/O_2/Ar$ plasmas were measured on a real-time basis. The number of contamination particles generated after the exposure to the respective plasmas was lower at $5^{\circ}C$ and higher at $0^{\circ}C$. In particular, for the entire temperature range, about five times more contamination particles were generated with exposure to $NF_3/O_2/Ar$ plasma than for exposure to $CF_4/O_2/Ar$ plasma. Observation of the surface of the anodic oxide film showed that the pore size and density of the non-treated film sample increased with the increase of the temperature. The change of the surface after exposure to fluorine plasma was greatest at $0^{\circ}C$. The generation of contamination particles by fluorine plasma exposure for the anodic oxide film prepared in the present study was different from that of previous aluminum anodic oxide films.

• Asian Pacific Journal of Cancer Prevention
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• v.16 no.4
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• pp.1657-1663
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• 2015

Background: Early diagnosis of hepatocellular carcinoma (HCC) is the most important step in successful treatment. However, it is usually rare due to the lack of a highly sensitive specific biomarker so that the HCC is usually fatal within few months after diagnosis. The aim of this work was to study the role of plasma nuclear factor kappa B (NF-${\kappa}B$) and serum peroxiredoxin 3 (PRDX3) as diagnostic biomarkers for early detection of HCC in a high-risk population. Materials and Methods: Plasma nuclear factor kappa B level (NF-${\kappa}B$) and serum peroxiredoxin 3 (PRDX3) levels were measured using enzyme linked immunosorbent assay (ELISA), in addition to alpha-fetoprotein (AFP) in 72 cirrhotic patients, 64 patients with HCC and 29 healthy controls. Results: NF-${\kappa}B$ and PRDX3 were significantly elevated in the HCC group in relation to the others. Higher area under curve (AUC) of 0.854 (for PRDX3) and 0.825 (for NF-${\kappa}B$) with sensitivity of 86.3% and 84.4% and specificity of 75.8% and 75.4% respectively, were found compared to AUC of alpha-fetoprotein (AFP) (0.65) with sensitivity of 72.4% and specificity of 64.3%. Conclusions: NF-${\kappa}B$ and PRDX3 may serve as early and sensitive biomarkers for early detection of HCC facilitating improved management. The role of nuclear factor kappa B (NF-${\kappa}B$) as a target for treatment of liver fibrosis and HCC must be widely evaluated.

• BMB Reports
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• v.49 no.7
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• pp.357-358
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• 2016

Merlin, encoded by the NF2 gene, is a tumor suppressor that exerts its function via inhibiting mitogenic receptors at the plasma membrane. Although multiple mutations in Merlin have been identified in Neurofibromatosis type II (NF2) disease, its molecular mechanism is not fully understood. Here, we show that Merlin interacts with LRP6 and inhibits LRP6 phosphorylation, a critical step for the initiation of Wnt signaling. We found that treatment of Wnt3a caused phosphorylation of Merlin by PAK1, leading to detachment of Merlin from LRP6 and allowing the initiation of Wnt/β-catenin signaling. A higher level of β-catenin was found in tissues from NF2 patients. Enhanced proliferation and migration caused by knockdown of Merlin in glioblastoma cells were inhibited by suppression of β-catenin. Conclusively, these results suggest that sustained Wnt/β-catenin signaling activity induced by abrogation of Merlin-mediated inhibition of LRP6 phosphorylation might be a cause of NF2 disease.

• Archives of Pharmacal Research
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• v.28 no.12
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• pp.1350-1357
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• 2005

Nuclear factor kappa B (NF-$\kappa$B) regulates the expression of multiple cytokines, chemokines, and cell adhesion molecules that are involved in the pathogenesis of asthma. We investigated the anti-asthmatic effects and the mechanism of action of DA-9201, an extract of the black rice, in a mouse model of asthma. Mice immunized with ovalbumin (OVA) were administered with DA-9201 (30, 100 or 300 mg/kg) or dexamethasone (DEXA, 3 mg/kg) for 2 weeks and challenged with aerosolized OVA during the last 3 days. Anti-asthmatic effects were assessed by means of enhanced pauses, level of total lgE and Th2 cytokines in plasma or bronchoalveolar lavage fluid (BALF), the percentage of eosinophils in BALF, and histopathological examination. The expression of NF-$\kappa$B in nuclear and cytoplasmic fraction and its DNA-binding activity in lung tissues were analyzed by means of Western blotting and electrophoretic gel mobility shift assay (EMSA), respectively. DA-9201 significantly reduced airway hyperrespon-siveness (AHR), total lgE level in plasma and BALF, IL-4, IL-5, and IL-13 levels in BALF, and the percentage of eosinophils in BALF. Tissue inflammation was significantly improved by DA­9201 treatment. In addition, DA-9201 dramatically suppressed the expression of NF-$\kappa$B and its DNA-binding activity. These results suggest that DA-9201 may be useful for the treatment of asthma and its efficacy is related to suppression of NF-$\kappa$B pathway.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2009.10a
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• pp.250-250
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• 2009