• Proceedings of the KIEE Conference
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• 2003.11c
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• pp.600-603
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• 2003

Energy spectrum modulation of X-ray source in digital mammography has been studied. In this study, we calculated various filtered spectra using the scattering data. Primary spectra were generated by Molybdenum (Mo) and Tungsten (W) targets. The materials of added filters are Molybdenum and Rhodium (Rh) for 40 kVp Mo. primary spectrum, the amounts of photons over whole energy ranges are attenuated to 0.43 with 0.03 mm Mo filter and 0.38 with 0.06 mm Mo filter while the photons of energy ranged from 17 keV to 20 keV. The photons of low energy ranged below 17 keV are considerably attenuated. This effect brings out reducing the scattered radiation and dose to the patient, and enhancing subject contrast in the image. The results show that filtered spectra are not seriously affected by X-ray tube loadability. Because the energy range from 17 keV to 20 keV is directly transmitted although low and high energies are mainly filtered.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2012.11a
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• pp.158-158
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• 2012

급속 열처리 온도의 변화가 라디오파 마그네트론 스퍼터링 방법으로 석영 기판 위에 증착된 $CaMoO_4:Tb$ 형광체 박막의 특성에 미치는 효과를 조사하였다. 형광체 박막의 결정 구조와 발광 특성은 각각 X-선 회절법과 광여기 발광 장치로 측정하였다. $500^{\circ}C$에서 열처리한 박막은 파장 영역 400-1100 nm에서 69%의 평균 투과율을 나타내었고, 열처리 온도가 증가함에 따라 박막의 평균 투과율은 감소하는 경향을 나타내었다.

• Korean Journal of Materials Research
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• v.4 no.5
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• pp.510-515
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• 1994

Yttria-stabilized zirconia(YSZ) films were prepared onto p-type (100) silicon wafer by a plasma-enhanced metallorganic chemical vapor deposition(PE MO CVD) processing involving the application of vapor mixture of tri(2.2.6.6-tetramethyl-3, 5-heptanate) yttrium$[Y(DPM)_3]$, zirconiumtriflouracethyla cetonate$(Zr(tfacac)_4$ and oxygen gas. The x-ray diffraction(XRD) and fourier transform infrared spectra(FT1R) results showed that the deposited YSZ films had a single cubic phase. $Y_2O_3$ content of YSZ film was analyzed by PIXE(partic1e induced x-ray emission). The experimental results by PIXE revealed that 12.lmol%, 20.4mol% and 31.6mol% $Y_2O_3$ could be obtained as the $Y(DPM)_3$ bubbling temperature varied at $160^{\circ}C, 165^{\circ}C$ and $170^{\circ}C$ respectively. The increase of $Y(DPM)_3$ bubbling temperature caused shifting flat band voltage to have a negative value.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.30 no.5
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• pp.200-207
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• 2020

MoSi₂, (Mo_1/2W_1/2)Si₂, and WSi₂ powders were synthesized by self-propagating high-temperature synthesis (SHS) method. The synthesized powders were heat-treated at 500, 1,000, 1,200, 1,300, 1,400, 1,500 and 1,600℃ in ambient atmosphere. Oxidation of Mo-W silicide powder was found at low temperature of 500℃. XRD structure analysis and DTA/TG data showed that MoO₃ was formed with 500℃ heat treatment for 1 hour, and that it was α-cristobalite phase that was formed with 1200℃ heat treatment, not α-quartz phase which is commonly found and stable at room temperature. Existence of W accelerated decomposition at both low and high temperature. Fully sintered MoSi₂ and (Mo_1/2W_1/2)Si₂ specimen did not show decomposition or weight loss by oxidation, with 1 hour heat treatment at either low or high temperature. Notably, it was difficult to sinter WSi₂ because of oxidation reaction at low temperature.

• Proceedings of the KAIS Fall Conference
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• 2001.05a
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• pp.287-289
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• 2001

The morphology of silica supported MoO$_3$ catalysts, which was prepared by impregnation of ammonium heptamolybdate with various weight loadings up to 35 wt%, was studied using x-ray diffraction. In addition to the orthorhombic phase, the behavior of the rarely studied hexagonal phase was characterized. For high loading catalysts, excess ammonium ions present in the monoclinic and triclinic precursors are capable of occupying interstitial sites of microcrystalline MoO$_3$ during moderate temperature calcinations and in doing so enhance the MoO$_3$-SiO$_2$ interaction. This results in a "well dispersed" morphology at high loadings. Sintering at high temperature is due to loss of ammonium from the oxide framework. Ammonia reimpregnation, which leads back to the well dispersed hexagonal phase, may offer a simple regeneration process for spent Mo containing catalysts.

• Proceedings of the Korean Magnestics Society Conference
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• 2005.06a
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• pp.192-193
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• 2005

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.418-419
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• 2005

$\o-LiMnO_2$ is known to have poor cycle performance causing the irreversible phase transformation on cycling. In this paper, the effect of chemical substitution on improving cycle performance of $o-LiMnO_2$ was studied at the compositions of $LiCr_xMn_{1-x}O_2$(x=0, 0.1, 0.2, 0.4). XRD is showed that structure of $LiCr_xMn_{1-x}O_2$ transformed from orthorhombic to spinel according to the increase of substitute degree. For lithium ion battery applications, $LiCr_xMn_{1-x}O_2$/Li cell were characterized electrochemically by charge/discharge cycling.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.05a
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• pp.118-122
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• 1996

1wt% Pt/MoO$_3$ gas sensors for detecting H$_2$ gas were fabricated by the pressed pellet method and surface structures of Pt/MoO$_2$ were investigated by TEM and XRD. It was observed that as the calcination temperature is increased, the overlayers of MoO$_3$ on Pt are produced, but the Cl content in PtCl$\_$x/ are decreased. H$_2$ gas sensing properties in N$_2$ ambient and in air ambient were investigated, respectively, and Pt/MoO$_3$ had high sensitivity at low working temp ; 7.8% at 50$^{\circ}C$, 97.7% at 100$^{\circ}C$, 97.1% at 150$^{\circ}C$ when the specimens are treated at 400$^{\circ}C$, and 99.6% at 150$^{\circ}C$ when they are treated at 200$^{\circ}C$. It shows the development of a low-power type sensor is possible by using Pt/MoO$_3$.

• Bulletin of the Korean Chemical Society
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• v.10 no.2
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• pp.210-212
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• 1989

• Transactions on Electrical and Electronic Materials
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• v.12 no.6
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• pp.267-270
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• 2011

In the process of inkjet-printed zinc tin oxide thin-film transistor, the effect of metallic interlayer underneath of source and drain electrode was investigated. The reason for the improved electrical properties with thin molybdenum oxide ($MoO_3$) layer was due to the chemically intermixed state of metallic interlayer, aluminum source and drain, and oxide semiconductor together. The atomic configuration of three Mo $3d_3$ and $3d_5$ doublets, three different Al 2p core levels, two Sn $3d_5$, and four different types of oxygen O 1s in the interfaces among those layers was confirmed by X-ray photospectroscopy.