• 한국결정성장학회:학술대회논문집
• /
• 한국결정성장학회 1996년도 The 9th KACG Technical Annual Meeting and the 3rd Korea-Japan EMGS (Electronic Materials Growth Symposium)
• /
• pp.519-521
• /
• 1996

Emerald (3BeO.Al2O3.6SiO2 : Cr3+) single crystals were crystals were grown by reflux method of temperature gradient in the flux solution of Li2O-MoO3-V2O5 system. The composition of flux materials were 3 mole ratio of MoO3-V2O5/Li2O, subtituted 0.2 mole% of K2O, Na2O, Nb2O5 etc to Li2O content, solved 10-15% of beryl to flux quantity and doped 1% of Cr2O3 to emerald amount. Those of mixing were melted at 110$0^{\circ}C$ in Pt containers of the 3 zone furnace of melt-growth-return to circulate continniously, specially it has been grown large emerald single crystal when thermal fluctuation was treated for 2hrs of once time a day at 1050-95$0^{\circ}C$ in growth zone, substitutional solid solution effect of Cr+3 ion for Al+3 to the growth of emerald single crystal was good. Emerald single crystals were c(0001) hexagonal crystal face of preferencial growth direction and m(1010) post side. When it had been durated for 5 months emerald single crystals of the firet size of 0.6mm thickness of seed crystal were grown 32$\times$65mm(c x m) of maximum size and 6.2mm thickness.

• 전기전자학회논문지
• /
• 제22권4호
• /
• pp.1230-1233
• /
• 2018

에어로졸 데포지션 (aerosol deposition)공정을 통해 $Al_2O_3$막을 4H-SiC 상에 50 nm 두께로 제조하였고, 후열처리 공정에 따른 전기적 특성을 분석하였다. 그 결과 $N_2$분위기 열처리 시 $Al_2O_3$와 SiC 계면의 고정전하량이 감소하였으나 산소공공 생성에 의한 누설전류의 증가를 확인하였다. 본 결과로부터 계면특성 향상과 누설전류의 감소를 위해서는 적절한 $N_2$와 $O_2$가스의 혼합이 중요함을 확인하였다.

• 한국전기전자재료학회논문지
• /
• 제31권3호
• /
• pp.135-140
• /
• 2018

Atomically thin $MoS_2$ single crystals have a two-dimensional structure and exhibit semiconductor properties, and have therefore recently been utilized in electronic devices and circuits. In this study, we have fabricated a field effect transistor (FET), using a CVD-grown, 3 nm-thin, $MoS_2$ single-crystal as a transistor channel after transfer onto a $SiO_2/Si$ substrate. The $MoS_2$ FETs displayed n-channel characteristics with an electron mobility of $0.05cm^2/V-sec$, and a current on/off ratio of $I_{ON}/I_{OFF}{\simeq}5{\times}10^4$. Application of bottom-gate voltage stresses, however, increased the interface charges on $MoS_2/SiO_2$, incurred the threshold voltage change, and degraded the device performance in further measurements. Exposure of the channel to UV radiation further degraded the device properties.

• 한국세라믹학회:학술대회논문집
• /
• 한국세라믹학회 2003년도 추계총회 및 연구발표회 초록집
• /
• pp.170.2-170
• /
• 2003

• 한국재료학회지
• /
• 제5권7호
• /
• pp.765-774
• /
• 1995

입자강화 알루미늄 복합재료의 고온거동을 조사하기위하여, 온도 623K~823K에서 $10^{-2}$ ~1.0 S$^{-1}$ 변형속도로 열간 압축 가공 시험을 행하여 복합재의 고온유동응력에 미치는 강화입자의 첨가량, 강화입자의 종류 및 크기와 변형속도 및 변형온도 등의 영향을 조사하였다. 강화입자의 체적분율이 증가함에 따라서 고온유동음력은 증가하였으나 항복점에서의 차이가 변형량이 증가되어도 그대로 유지되고 있었다. 변형속도 민감도(m)로 볼때 SiCp첨가된 복합재가 A1$_2$O$_3$p를 첨가한 복합재보다 비교적 균일하게 가공할 수 있음을 알 수 있었으며, 823K에서 최적변형속도는 0.1Sec$^{-1}$ 이었다. 변형에 필요한 활성화 에너지는 A6061기지금속이 290KJmole$^{-1}$, A6061-20vo1% SiCp = 327KJmo1e$^{-1}$, A6061-20vo1% $Al_2$O$_3$= 531KJmole$^{-1}$이었다. 이것은 알루미늄의 자기활성화에너지 138KJmo1e$^{-1}$보다 큰 값으로 A1$_2$O$_3$강화복합재료가 SiCp 강화 복합재료보다 열간가공이 어렵다는 것을 나타내는 것이다.

• 한국전자파학회지:전자파기술
• /
• 제14권3호
• /
• pp.15-19
• /
• 2003

본 연구에서는 RF magnetron sputtering으로 상온에서 증착된 ZnO압전박막을 이용하여, 1.96 GHz 대역의 air gap type의 FBAR BPF를 개발하였다. FBAR BPF는 Si wafer에 절연막으로 열 산화막층(SiO$_2$)을 형성한 후, 형성된 산화막 위에 바닥전극(Al), ZnO압전층 그리고 상부전극(Mo)를 차례로 RF magnetron sputter장비를 사용하여 증착시키고, Si wafer를 dry etching하여 air hole을 구현함으로써 device를 제조하였다. 제조된 FBAR BPF의 ZnO압전층의 XRD분석 결과 (002)면 방향으로 우선 배향되었으며, XRC의 $\sigma$값은 1.018이었다. 삽입손실 1 dB 내외로 우수한 특성을 나타내었다.

• 한국분말재료학회지
• /
• 제13권6호
• /
• pp.408-414
• /
• 2006

[ $MoSi_2$ ] alloys with Al, B or Nb were prepared by an advanced consolidation process that combined mechanical alloying with pulse discharge sintering (complex forming) to improve the mechanical properties. Their microstructure and mechanical properties were investigated. The $MoSi_2$ alloys fabricated by complex forming method showed very fine microstructure when compared with the sample sintered from commercial $MoSi_2$ powders. Alloys made from powders milled in Ar gas had fewer silica or alumina phases as compared to their counterparts sintered from powders milled in air. In densification of the sintered body, addition of B was more effective than Al or Nb. Both Victors hardness and tensile test indicated that the alloy fabricated by the complex forming method showed better properties than the sample sintered from commercial $MoSi_2$ powders. The Al added alloy sintered from the powders milled in air had the superior mechanical properties due to the suppression of $SiO_2$ and formation of fine $Al_2O_3$ particles.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
• /
• pp.1096-1099
• /
• 2004

The principal problems in development of dielectric paste materials for PDP(plasma display panel)are PbO free paste and low melting temperature. We prepared PbO free paste from glasses in the system BaO-ZnO-$B_2O_3$-$V_2O_5$. DTA, and XRD were used to characterize BaO-ZnO-$B_2O_3$-$V_2O_5$ glasses. In this present study, PbO free paste had thermal expansion of $74\times10^{-7}/^{\circ}C$, DTA softening point of $460^{\circ}C$, and firing condition of $520^{\circ}C$, 20min

• 전기전자학회논문지
• /
• 제28권1호
• /
• pp.104-109
• /
• 2024

본 연구에서는 다양한 가스 분위기에서 후열처리를 진행한 후 Ga₂O₃/SiC 이종접합 다이오드의 깊은 준위 결함 변화를 Deep Level Transient Spectroscopy(DLTS) 기법으로 분석하여 깊은 준위 결함의 변화가 Ga₂O₃/SiC 이종접합 소자의 전기적 특성에 미치는 영향을 조사하였다. 또한, J-V 측정 및 Hall 측정을 통한 전기적 특성 분석을 실시하였고, N₂ 분위기에서 열처리된 소자에서 3.06 × 10^-2 A/cm²로 가장 높은 on-state current가 측정되었으며, carrier concentration은 3.8 × 10¹⁴ cm^-3로 증가하는 것이 관측되었다. 이는 후열처리 분위기에 따른 깊은 준위 결함의 변화가 전기적 특성에 영향을 미칠 수 있음을 시사한다.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 2001년도 하계학술대회 논문집 C
• /
• pp.1405-1407
• /
• 2001

It was studied to prepare high temperature heating elements using molybdenum disilicide($MoSi_2$). Molybdenum disilicide is widely used as material for manufacturing high temperature heating elements. $MoSi_2$ heating elements could be used at 1700-1900$^{\circ}C$. However, it is relatively expensive, and its demand depends on import. $MoSi_2$ powders was mixed with 4-5wt% of montmorillonites type bentonite as plasticizer and a small amount of $Si_3N_4$, $ThO_2$, and B as additives to prepare specimen of heating elements. Then, it was extruded, dried, sintered and machined followed by heating test. Effects of sintering conditions and amount of additives were investigated, It was sintered effectively at 1,350$^{\circ}C$ for five hours. Electrical resistivity was decreased with increasing of sintering temperature and time, and related with apparent density of the specimens. It was linealy decreased with increasing of sintered density. The heating elements thus prepared was stable at 1700$^{\circ}C$ and the physical properties such as specific electrical resistivity, hardness, apparent density, thermal expansion coefficient, and bending strength were almost identical with those of commercial heating elements.