• 한국세라믹학회지
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• 제25권5호
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• pp.488-494
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• 1988

Effects of MnO2 addition on themicrostructure, dielectric and piezoelectric properties of Rhombohedral, Tetragonal and Morphotropic phase boundary(MPB) in Pb(Ni1/3Nb2/3)O3-PbTiO3-PbZrO3 system were investigated and respectively the amount of MnO2 addition was 0, 0.2, 0.5, 1.0, 3.0wt%. In the tetragonal region, compared with the Rhombohedral and Morpotropic phase boundary, Mechanical quality factor(Qm), Curie temperature(Tc) and Dissipation factor were promoted by addition of MnO2. According to the results of the microstructure, dielectric and piezoelectric properties, the solid solution range of MnO2 addition in this system was 0.2-0.5wt%.

• Transactions on Electrical and Electronic Materials
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• 제4권6호
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• pp.13-16
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• 2003

Mn-doped $ZnGa_{2}O_{4}$:$Mn^{2+}$ (M=S, Se) thin film phosphors have been grown using a pulsed laser deposition technique under various growth conditions. The structural characterization carr~ed out on a series of $ZnGa_{2}O_{4}$:$Mn^{2+}$ (M=S, Se) films grown on MgO(l00) substrates usmg Zn-rich ceramic targets. Oxygen pressure was varied from 50 to 200 mTorr and Zn/Ga ratio was the function of oxygen pressure. XRD patterns showed that the lattice constants of the $ZnGa_{2}O_{4}$:$Mn^{2+}$ (M=S, Se) thin film decrease with the substitution of sulfur and selenium for the oxygen in the $ZnGa_2O_4$. Measurements of photoluminescence (PL) properties of $ZnGa_{2}O_{4}$:$Mn^{2+}$ (M=S, Se) thin films have indicated that MgO(100) is one of the most promised substrates for the growth of high quality $ZnGa_2O_{4-x}M_{x}$:$Mn^{2+}$ (M=S, Se) thin films. In particular, the incorporation of Sulfur or Selenium into $ZnGa_2O_4$ lattice could induce a remarkable increase in the intensity of PL. The increasing of green emission intensity was observed with $ZnGa_2O_{3.925}Se_{0.075}:$Mn^{2+}$ and $ZnGa_2O_{3.925}S_{0.05}$:$Mn^{2+}$ films, whose brightness was increased by a factor of 3.1 and 1.4 in comparison with that of $ZnGa_{2}O_{4}$:$Mn^{2+}$ films, respectively. These phosphors may promise for application to the flat panel displays.

• 한국환경과학회지
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• 제15권4호
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• pp.333-340
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• 2006

A (5 wt.%)Mn-(1 wt.%)$V_{2}O_{5}/TiO_{2}$ catalyst were prepared by co-precipitation method and used for low-temperature selective catalytic reduction (SCR) of $NO_x$ with ammonia in the presence of oxygen. The properties of the catalysts were studied by X-ray diffraction (XRD), temperature programmed reduction (TPR) and scanning electron microscope-energy dispersive X-ray spectroscopy (SEM-EDS). The experimental results showed that (5 wt.%)Mn-(1 wt.%)$V_{2}O_{5}/TiO_{2}$ catalyst yielded 81% NO conversion at temperature as low as $150^{\circ}C$ and a space velocity of $2,400\;h^{-1}$. Crystalline phase of $Mn_{2}O_3$ was present at ${\ge}\;15%$ Mn on $V_{2}O_{5}/TiO_{2}$. XRD confirmed the presence of manganese oxide ($Mn_{2}O_{3}$) at $2{\theta}=32.978^{\circ}(222)$. The XRD patterns presented of (5 wt.%)Mn-(1 wt.%)$V_{2}O_{5}/TiO_{2}$ did not show intense or sharp peaks for manganese oxides and vanadia oxides. The TPR profiles of (5 wt.%)Mn-(1 wt.%)$V_{2}O_{5}/TiO_{2}$ catalyst showed main reduction peat of a maximum at $595^{\circ}C$.

• 한국결정성장학회지
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• 제2권2호
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• pp.71-76
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• 1992

$0.05Pb(Al_{2/3}W_{1/3})O_3-0.95Pb(Zr_{0.52}Ti0.48)O_3$를 기본 조성으로 $MnO_2,Fe_2O_3$를 첨가제로 하여 사진식각법(Photolithography)을 이용 세라믹 필터를 제작하였다. $MnO_2$의 첨가량이 증가함에 따라 전기 기계 결합 계수(Kp)가 낮아지며, $Fe_2O_3$의 경우 Kp값은 57% 정도로 우수하나 기계적 품질 계수(Qm)는 $MnO_2$첨가의 경우에 비해 상대적으로 낮은 값을 보여주고 있다. $MnO_2$0.3wt% 첨가의 경우 3dB 대역폭은 155kHz, $ Fe_2O_3$0.1wt%인 경우 260kHz로써 Qmr값이 크기에 반비례하였으며, 군지연시간 특성은 $MnO_2$의 경우 Gaussian 특성을,$Fe_2O_3$의 경우 Butterworth 특성을 나타내었다.

• 한국세라믹학회지
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• 제35권9호
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• pp.995-1001
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• 1998

As a basic study for cathode materials of {{{{ { {LiMn }_{2 }O }_{4 } }}-based lithium-ion secondary batteries Li({{{{ { { { {Mn }_{1-$\delta$ }Nb }_{$\delta$} )}_{2 }O }_{4 } }} ($\delta$=0.05, 0.1, 0.2) materials which Nb is substituted for Mn were synthesized by the solid state reaction at 80$0^{\circ}C$ and 110$0^{\circ}C$ respectively. The second phase {{{{ { LiNbO}_{3 } }} appeared above $\delta$=0.1 As the result of im-pedance analysis as the amount of substituted Nb increased the resistivity of grain boundary increased greatly. Compared to undoped-{{{{ { {LiMn }_{2 }O }_{4 } }} the electrical conductivity of Li({{{{ { { { {Mn }_{1-$\delta$ }Nb }_{$\delta$} )}_{2 }O }_{4 } }} decreased slightly but is charging capacity and potential plateau increased.

• 한국재료학회지
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• 제14권5호
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• pp.334-337
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• 2004

Perovskite PMN-PZT-based ceramics were prepared and the$ MnO_2$ doping effects on their piezoelectric properties were investigated. Grain size decreased with increasing the $MnO_2$ content, and the pyrochlore phase was not identified in the sintered PMN-PZT ceramics with 0.01～1.0wt% $MnO_2$. Piezoelectric voltage and charge constants were reduced and mechanical quality factor increased with increasing the $MnO_2$ content. However, electromechanical coupling coefficient slightly decreased with increasing the MnO$_2$ content without regard to the grain size.

• 한국전기전자재료학회논문지
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• 제29권9호
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• pp.539-545
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• 2016

Alumina added with Mn3O4 up to 7.5 cat% of Mn was prepared by conventional ceramic processing, and the sintering behavior and the optical properties of which were studied as functions of Mn content. Densification and grain growth of alumina were enhanced by Mn addition up to 0.75 cat% but was leveled off at higher concentrations. XRD revealed that $Al_2MnO_4$(galaxite) was formed as a second phase in the specimens with more than 0.75 cat% of Mn. Thus it is believed that either the solid solution effect of Mn or the Zener effect of $Al_2MnO_4$ becomes predominant in the sintering of Mn-added $Al_2O_3$ according to the additive concentration. UV-VIS reflectivity(SCI) spectra of Mn-added $Al_2O_3$ consisted of smooth bottoms in 300~550 nm wavelength range and plateaus at wavelengths longer than 650 nm. The reflectivity spectrum continuously moved downward, and the specimen color became darker and thicker with increasing Mn content. The CIELAB color change with respect to standard white was also dependent on the amount of Mn added: ${\Delta}L^*$(D65) negatively increased and ${\Delta}E_{ab}^*$(D65) positively increased with increasing Mn content, probably due to Mn substitution to Al and/or the mixing effect of black $Al_2MnO_4$ as a second phase.

• 자원환경지질
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• 제53권6호
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• pp.687-694
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• 2020

이 연구에서는 KMnO4, H2O2, NaOH와 같은 산화제와 중화제를 사용하여 광산배수 내 Mn 제거효율을 확인하고 광산배수에 다량으로 존재하는 Fe2+의 영향을 파악하고자 하였다. 용액 내 Fe2+의 유무에 따라 Mn의 제거여부를 확인하기 위하여 초기농도 0.1 mM의 Mn2+ 용액을 준비하였다. 이때, 광산배수모사 용액의 Fe2+ 농도는 1 mM이 되도록 조성하였다. 산화제와 중화제의 주입량은 용액 내 Mn2+를 기준으로 각각의 몰비가 0.1, 0.67, 1.0, 2.0이 되도록 주입하였으며, Mn2+의 제거효율은 산화제인 KMnO4를 주입한 경우 최대 90%로 가장 높은 결과를 보였다. 산화제 주입 후 검은색의 MnO2 침전물이 형성되어 Mn2+의 산화제거를 확인하였고, 반응용액의 pH-Eh 조건에서 Mn 산화물인 Pyrolusite (MnO2)가 안정함을 확인하였다. 그러나 용액 내 Fe2+가 존재하는 광산배수 모사용액에서는 용액 내 Mn2+의 제거율이 6%로 매우 낮은 결과를 보였다. 이러한 결과는 Mn2+의 산화보다 Fe2+의 산화가 더욱 빠르게 진행되면서 Mn 산화물 형성을 저해하기 때문으로 판단된다. 산화제 및 중화제 주입 후 용액 내 Fe의 농도가 급격히 감소하는 결과는 Fe2+의 산화에 기인한 것으로 판단된다. 또한, Fe2+의 산화 과정에서 KMnO4의 Mn7+가 Mn2+로 환원되어 광산배수 모사 용액의 용존 Mn의 농도가 오히려 증가하는 결과를 보이기도 하였다. 이상의 결과로 보아, 용액에 존재하는 Mn을 제거하기 위해서는 산화법이 중화법보다 더 효과적이며, 광산배수에 존재하는 다량의 Fe2+를 먼저 제거한 후 용존 Mn의 제거를 진행하는 것이 효과적인 것으로 판단된다.

• 한국세라믹학회지
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• 제19권4호
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• pp.293-299
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• 1982

The effects of $MnO_2$ and $Cr_2O_3$ on the Piezoelectrictric properties of Pb(Mg1/2W1/2)0.3 Ti0.4 Zr0.3O3 Ceramics. Electromechanical properties in the system in connection with the sintering temperature and the effects of $MnO_2$ and $Cr_2O_3$ addition. The dielectric constant of the ceramics decreased with the additions of $MnO_2$ while the additions of $Cr_2O_3$ increased the value. The Planar coupling factor (Kp) of the ceramics with 0.2wt% $MnO_2$ and with 0.2wt% $Cr_2O_3$ gave the highest value of 0.52 and 0.513 as sintered at 106$0^{\circ}C$, 108$0^{\circ}C$, respectively. The value of mechanical Q-factor were in parallel with the fired density of the ceramics. The optical micrography of the sintered bodies showed that the additions of $MnO_2$ promoted the grain growth, while the additions of $Cr_2O_3$ retarded the grain growth.

• 한국진공학회지
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• 제15권5호
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• pp.541-546
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• 2006

본 연구에서는 박막형 $ZnGa_2O_4:Mn$ 산화물 형광체의 음극선루미느센스 특성과 구조적 성질에 대하여 field emission scanning electron microscopy (FESEM), atomic force microscopy (AFM), photoluminescence (PL), 그리고 cathodoluminescence (CL) 방법을 이용하여 조사하였다. $ZnGa_2O_4:Mn$ 형광체 타겟으로부터 $Mn^{2+}$ 이온의 $^4T_1{\rightarrow}^6A_1$ 전이에 의한 506nm 파장에서의 PL emission 스펙트럼이 관찰되었다. 색좌표는 x = 0.09, y = 0.67 이었다. $ZnGa_2O_4:Mn$ 박막의 여기 스펙트럼은 $Mn^{2+}$ 이온 흡수에 의한 294 nm의 피크 파장을 나타내었다. 낮은 압력에서 증착한 $ZnGa_2O_4:Mn$ 형광체 박막은 고밀도의 치밀한 단면구조를 보였고, 높은 세기의 음극선루미느센스가 505 nm 피크 파장에서 나타났다. 표면 거칠기가 음극선루미느센스의 세기에 미치는 영향은 관찰되지 않았다.