• 공업화학
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• 제29권4호
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• pp.461-467
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• 2018

본 연구에서는 $(n-BuCp)_2ZrCl_2$를 $SiO_2/MgCl_2$ 이원 지지체에 담지시켰다. 촉매를 담지하기 전, $SiO_2/MgCl_2$ 이원 지지체를 3종의 알킬알루미늄 화합물, 트리메틸알루미늄, 트리에틸알루미늄 또는 에틸알루미늄 세스퀴클로라이드로 표면처리 하였다. 합성된 표면 처리된 $SiO_2/MgCl_2$에 담지된 메탈로센 촉매로 에틸렌 및 1-헥센의 공중합을 하였다. 촉매 특성 및 성능을 BET, XPS 분석, ICP-AES 분석 및 FE-SEM을 통해 비교 분석하였다. 생성된 공중합체를 DSC 분석, GPC 분석, 13C-NMR 분석 및 FE-SEM을 통해 비교 분석하였다. 합성된 $SiO_2/MgCl_2$ 담지된 메탈로센 촉매의 분석은 이들 촉매의 Zr 함량이 $SiO_2$에 담지된 촉매에 비해 상대적으로 낮다는 것을 보여 주었다. 이것은 재결정된 $MgCl_2$ 및 알킬알루미늄의 존재로 인한 $SiO_2$의 표면적 감소에 기인할 수 있다. 또한, $SiO_2/MgCl_2$ 담지된 메탈로센 촉매는 $SiO_2$에 담지된 메탈로센 촉매보다 활성이 높았으며 이 중 EASC-표면 처리 이원 지지체에 담지된 메탈로센촉매가 1.9 kg PE/($mmol-Zr^*hr$)의 가장 높은 활성을 보였다. 이것은 EASC가 강한 루이스 산으로 작용하기 때문이다. 또한, 사용된 알킬알루미늄의 리간드가 클수록 생성된 중합체의 입자 표면이 더 거칠었다.

• 전자공학회논문지D
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• 제36D권12호
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• pp.31-36
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• 1999

박막 전계발광소자의 새로운 형광체를 개발하기 위하여 $Mg._5Zn._5SiN_2:Tb$ 및 $Mg._5Zn._5SiN_2:Eu$ 형광체를 합성한 후, 각각 및 발광 및 음극선 발광 특성을 조사하였다. 합성된 각각의 형광체의 빛 발광 스펙트럼과 음극선 발광 스펙트럼은 동일하였으며, Tb 도는 Eu 발광 중심체의 고유한 발광 기구에 의해서 발광하는 것으로 확인되었다. 전자빔 증착 장비로 제작된 $Mg._8Zn._2SiN_2:Eu$ 박막 전계발광소자의 CIE 색 좌표는 x=0.47, y=0.46, 문턱 전압은 47V 및 최대 전압 80V에서의 휘도는 23.5 cd/cm^2$를 나타내었다. 또한 박막 전계발광소자의 capacitance-voltage 특성과 charge-voltage 특성 등의 전기적 특성도 함께 측정되었다.

• 한국세라믹학회지
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• 제33권6호
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• pp.653-659
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• 1996

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2013년도 춘계학술대회 논문집
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• pp.112-113
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• 2013

Thin CrAlMgSiN films, whose composition were 30.6Cr-11.1Al-7.3Mg-1.2Si-49.8N (at.%), were deposited on steel substrates in a cathodic arc plasma deposition system. They consisted of alternating crystalline Cr-N and AlMgSiN nanolayers. After oxidation at $800^{\circ}C$ for 200 h in air, a thin oxide layer formed by outward diffusion of Cr, Mg, Al, Fe, and N, and inward diffusion of O ions. Silicon ions were relatively immobile at $800^{\circ}C$. After oxidation at $900^{\circ}C$ for 10 h in air, a thin $Cr_2O_3$ layer containing dissolved ions of Al, Mg, Si, and Fe formed. Silicon ions became mobile at $900^{\circ}C$. After oxidation at $900^{\circ}C$ for 50 h in air, a thin $SiO_2-rich$ layer formed underneath the thin $Cr_2O_3$ layer. The film displayed good oxidation resistance. The main factor that decreased the oxidation resistance of the film was the outward diffusion and subsequent oxidation of Fe at the sample surface, particularly along the coated sample edge.

• Metals and materials international
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• 제24권6호
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• pp.1241-1248
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• 2018

The reactive wetting behaviors of molten Zn-Al-Mg alloys on MnO- and amorphous (a-) $SiO_2$-covered steel sheets were investigated by the sessile drop method, as a function of the Al and Mg contents in the alloys. The sessile drop tests were carried out at $460^{\circ}C$ and the variation in the contact angles (${\theta}_c$) of alloys containing 0.2-2.5 wt% Al and 0-3.0 wt% Mg was monitored for 20 s. For all the alloys, the MnO-covered steel substrate exhibited reactive wetting whereas the $a-SiO_2$-covered steel exhibited nonreactive, nonwetting (${\theta}_c>90^{\circ}$) behavior. The MnO layer was rapidly removed by Al and Mg contained in the alloys. The wetting of the MnO-covered steel sheet significantly improved upon increasing the Mg content but decreased upon increasing the Al content, indicating that the surface tension of the alloy droplet is the main factor controlling its wettability. Although the reactions of Al and Mg in molten alloys with the $a-SiO_2$ layer were found to be sluggish, the wettability of Zn-Al-Mg alloys on the $a-SiO_2$ layer improved upon increasing the Al and Mg contents. These results suggest that the wetting of advanced high-strength steel sheets, the surface oxide layer of which consists of a mixture of MnO and $SiO_2$, with Zn-Al-Mg alloys could be most effectively improved by increasing the Mg content of the alloys.

• 전자공학회논문지D
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• 제34D권2호
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• pp.27-37
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• 1997

Photoluminescent and cathodoluminescent charcteristics of inorganic luminescent materials were investigated ot develop possible phosphors for thin film electroluminescent (TFEL) device applications. Mg, Zn, and Photoluminescent and cathodoluminescent charcteristics of inorganic luminescent materials were investigated ot develop possible phosphors for thin film electroluminescent (TFEL) device applications. Mg, Zn, and $Si_3N_4$ powders were used to synthesize $(Mg_xZn_{1-x})SiN_2$ host materials. $Tb_4O_7$ and $Eu_2O_3$ powdrs were added as luminescent centers. Very sharp emission spectra of $Tb^{3+}$ ions were observed from $Mg._5Zn._5SiN_2:Tb$ sampels sintered at $1400^{\circ}C$ for an hour and the maximum intensity of emission spectra occured at wavelength of 550nm (green light). Synthetic conditions of $(Mg_xZn_{1-x})SiN_2:Eu$ phosphors were optimized for the hghest luminescence. The Eu concentrations were varied from 0.2% to 1.6%. Before firing, the powders were mixed using ballmills, methanol, acetone, or D.I. water. The Mg/Zn ratio also were varied from x=0.3 to x=0.7. The maximum PL intensity was obtained from a sample with 1.2% Eu concentration and the powder was mixed with methanol and dried before firing. The maximum intensity of the emission spectra occurred t the wavelength of 470nm(blue light). TFEL devices fabricated by using sputter deposition of $(Mg._3Zn._7)SiN_2:Eu$ phosphor layer showed yellowish white emission at the phosphor field of 2MV/cm.

• Progress in Superconductivity
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• 제9권1호
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• pp.68-73
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• 2007

We fabricated the in-situ $MgB_2$ wires using the powder-in-tube method and investigated the effects of sintering temperature and SiC contents on the microstructure and superconducting properties. Pure $MgB_2$ wires and 5, 10, 20 wt.% SiC doped $MgB_2$ wires were sintered at $600-1000^{\circ}C$ for 30 minutes in Ar atmosphere. We found that $MgB_2$ phase was mostly formed at the sintering temperature of $700^{\circ}C$ and above, and the critical temperature ($T_c$) increased with increasing sintering temperature. For the $MgB_2$ sintered at $850^{\circ}C$, the highest critical current density ($J_c$) was obtained to be $3.7{\times}10^5\;A/cm^2$ at 5 K and 1.6 T by a magnetic properties measurement system (MPMS). The addition of SiC to the $MgB_2$ wires changed microstructure and critical properties. SEM observation showed that the $MgB_2$ core had considerable micro-cracks in undoped wire and the density of micro-cracks decreased with increasing SiC contents. The critical temperature decreased as the SiC contents increased, on the other hand, the critical current density of SiC doped $MgB_2$ wires in high magnetic field was enhanced compared to that of undoped $MgB_2$ wires.

• Bulletin of the Korean Chemical Society
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• 제18권2호
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• pp.203-208
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• 1997

A series of MgO-SiO2 catalysts were prepared by coprecipitation from the mixed solution of magnesium chloride and sodium silicate. Some of the sample were modified with 1 N H2SO4 and used as modified catalysts. The addition of MgO to SiO2 caused the increase of acidity and the shift of O-H and Si-O stretching bands of the silanol group to a lower frequency in proportion to the MgO content. The acid structure of MgO-SiO2 agreed with that proposed by Tanabe et al.. Catalytic activity for 2-propanol dehydration increased in relation to the increase of acidity and band shift to a lower frequency.

• 한국세라믹학회지
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• 제33권9호
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• pp.985-994
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• 1996

The initiation and growth of $\alpha$-Al2O3/metal composites by the directed oxidation of molten commercial AlZnMg-alloy at 1223-1423K were investigated. Spontaneous bulk growth did not occur on the alloy alone. but the uniform initiation and growth of the composite were obtained by putting a thin layer of SiO2 particles on the surface of the alloy. Without SiO2 the external surface of the oxide layer was convered by MgO and MgAl2O4. But with the SiO2 reaction initiate the porous ZnO layers were found on the growth surface. The higher process temperature yielded a lower metal content. The oxidation product of $\alpha$-Al2O3 was found to be oriented with c-axis parallel to th growth direction. The growth rates increased with temperature and the apparent activation energy was 111.8 kJ/mol.

• 한국결정성장학회지
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• 제8권2호
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• pp.233-239
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• 1998

화학기상증착법을 이용하여 tetramethylsilane(TMS)과 hexamethyldisilane(HMDS)으로부터 SiC층을 증착시켰다. 반응관 내의 압력은 1torr를 유지시켰으며, $H_2$ 가스를 사용하여 precursor를 반응로내로 수송하였고 $1200^{\circ}C$의 반응온도로 SiC 증착이 이루어졌다. 기판은 tantalum으로 masking한 Si-wafer와 platinum, molybdenum으로 masking한 MgO 단결정을 사용하였다. 금속층(Ta, Pt, Mo)에서의 SiC 증착 양상과 Si, MgO 위에서의 SiC 증착 양상을 비교함으로써 SiC 증착의 선택성을 관찰하였다. 증착층의 주된 상은 X-선 회절분석에 의해 $\beta-SiC$로 확인되었다. 또한 전자현미경 분석을 통해 각 층에서의 증착 양상의 차이를 조사하였다.