• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.173-173
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• 2009

높은 휘도를 갖는 $Eu^{2+}$가 도핑된 $Sr_3MgSi_2O_8$ 형광체는 고상반응법을 사용하여 합성하였다. 몰 비에 따른 조성을 정밀전자저울을 사용 무게를 칭량하여 에탄올을 용매로 하여 혼합, 건조 후 하소 온도는 $1000^{\circ}C$, 합성 온도는 $1200^{\circ}C$에서 $1400^{\circ}C$까지 $H_2$ 5% Ar 95% 환원분위기에서 소성 온도 별 결정상을 관찰하였고, 그 형태에 따라서는 Powder상태일 때와 Powder를 Press하여 bulk상태로써의 결정상의 변화를 연구하였다. 그 결과 분말상태와 성형을 가한 pellet의 두 가지 형태로 합성하여 비교한 결과 성형공정을 거친 시료의 경우가 분말 상태일 때 보다 좋지 못한 결정상이 관찰되었다. $Sr_3MgSi_2O_8$의 미세구조는 SEM으로 관찰하였다.

• Journal of the Korean Ceramic Society
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• v.29 no.1
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• pp.9-14
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• 1992

Some of non-isothermal analysis methods are applied to CaO-MgO-Al2O3-SiO2 glass system to find the kinetics parameters of crystallisation, activation energy, Avrami component and frequency factor. The results using the non-isothermal analysis were compared to that of microstructure experiment. Analysis of the result has enabled to some methods to be to recommend as being the most appropriate equation to use in a glass system. It was shown that in the thermal analysis using the non-isothermal method of Kissinger, Augis-Bennett, Bansal, and Marotta, the calculation of activation energy is not much different, while Avrami component and frequency factor are different from applied each methods.

• Journal of Korean Ophthalmic Optics Society
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• v.6 no.1
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• pp.149-153
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• 2001

Three-dimensional thermoluminescence(TL) spectra of LiF: Mg, Cu, Na, Si TL material based on temperature, wavelength and intensity were measured and analyzed. The glow curves were obtained by integration of luminescence intensity for wavelength at each temperature, and various trapping parameters related to the trap formation were determined by analyzing these curves. Computerized glow curve deconvolution(CGCD) method which based on general order kinetics(GOK) model were used for the glow curve analysis. The glow curves of LiF:Mg, Cu, Na, Si TL material were deconvoluted to six isolated glow curves which have peak temperature at 333 K, 374 K, 426 K, 466 K, 483 K and 516 K, respectively. The 466 K main glow peak had an activation energy of 2.06 eV and a kinetic order of 1.05. This TL material was also found to have three recombination centers, 1.80 eV, 2.88 eV and 3.27 eV by TL spectra analysis based on Franck-Condon model. It showed that 2.88 eV is the dominant center, followed by 3.27 eV level, and 1.80 eV center is ascertained as emission center of this material even though its very weak emission intensity.

• Journal of the Korean Ceramic Society
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• v.34 no.5
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• pp.483-490
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• 1997

Al2O3/metal composites were fabricated by oxidation and reaction of molten Al-alloy into two types of commercial Al2O3-SiO2 fibrous insulation board. The growth rate, composition and microstructure of these materials were described. An AlZnMg(7075) alloy was selected as a parent alloy. Mixed polycrystalline fiber and glass phase fiber were used as a filler. The growth surface of an alloy was covered with and without SiO2. SiO2 powder was employed as a surface dopant to aid initial oxidation of Al-alloy. Al-alloy, SiO2, fiber block and growth inhibitor CaSiO3 were packed sequentially in a alumina crucible and oxidized in air at temperature range 90$0^{\circ}C$ to 120$0^{\circ}C$. The growth rate of composite layer was calculated by measuring the mass increasement(g) per unit surface($\textrm{cm}^2$). XRD and optical microscope were used to investigate the composition and phase of composites. The composite grown at 120$0^{\circ}C$ and with SiO2 dopant showed rapid growth rate. The growth behavior differed a little depending on the types of fiber used. The composites consist of $\alpha$-Al2O3, Al, Si and pore. The composite grown at 100$0^{\circ}C$ exhibited better microstructure compared to that grown at 120$0^{\circ}C$.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.85-85
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• 1999

Pb(Mg1/3Nb2/3)O3-PbTiO3 (PMN-PT)는 높은 유전율로 인해 강유전체 메모리 소자의 응용을 위한 연구가 되고 있으며 또한 전왜(electrostrictive)성을 갖고 있어 이력현상을 갖지 않음으로 최근 들어 미세전기기계소자(MEMS)로의 연구가 활발히 되고 있다. 본 연구에서는 MEMS 소자로서의 응용을 위해 저응력 SiNx가 형성된 Si 기판위에 Pt 전극 혹은 산화물 전극 SrRuO3를 갖는 PMN-PT 박막 캐패시터를 제조하였다. 박막 하부의 구조는 금속전극의 경우 Pt/Ti/LTO/SiNx/Si이고 산화물전극은 SrRuO3/Ru/SiNx/Si의 구조를 갖는다. PMN-PT 박막은 alkoxide를 기반으로 회전 coating 방법을 사용하여 박막 하부층의 변화를 주어서 성장시켰다. PMN-PT 용액의 합성은 분말합성법에서 사용하는 columbite 방법을 응용하여 상대적으로 반응정도가 낮은 Mg를 Nb와 우선 반응하여 Mg-Nb solution을 얻고 Pb-acetate 용액과 합성하여 PMN을 제조한 후 PT를 반응시켜서 제조하였다. PMN-PT 박막에서 동일한 공정조건 하에서 박막 하부층의 구조에 따라서 PMN-PT 박막의 조성이 A2B2O6의 조성을 가지는 파이로클러어상이 형성되거나 또는 ABO3인 페로브스카이트상이 형성되는 것을 관찰하였다. 금속 전극인 Pt를 하부전극으로 사용한 경우는 혼재상이 형성되어 패로브스카이드 PMN-PT를 얻기 위해 seed layer로서 PbTiO3를 사용하였으며 이러한 seed layer 위에 형성된 PMN-PT를 형성하는 경우 rutile 구조인 RuO2 위에 성장시킨 PMN-PT는 파이로클로어와 페로브스카이트의 혼재상이 얻어졌으나 pseudo-perovskite 구조인 SrRuO3 박막 위에 형성된 PMN-PT 박막에서는 페로브스카이트가 주된 상으로 얻어졌다. 즉 하부층(전극 또는 seed layer)으로 perovskite 구조를 갖는 박막을 형성하게 되면 페로브스카이트를 갖는 PMN-PT 박막을 얻을 수 있었다. 전기적인 특성은 상부전극으로 Pt를 사용하여 HP 4194A로 측정을 하였다. PT seed layer를 포함한 PMN-PT 박막은 유전상수 1086과 유전손실 2.75%을 가졌다.

• Journal of the Mineralogical Society of Korea
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• v.18 no.4 s.46
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• pp.237-248
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• 2005

Results from in-situ high temperature X-ray diffraction measurements show that $Mg_{2}SiO_{4}{-}$spinel converts back to olivine phase only when heated in vacuum, and that at some high temperature, the olivine phase grows with time at the expense of the spinel phase strongly suggesting a 'nucleation and growth' type transition. In order to obtain the activation energy of spinel-olivine back transformation, kinetics measurements were performed on $Mg_{2}SiO_{4}{-}$spinel in vacuum at high temperatures between 1023 and 1116 K. Activation energy was determined using 'time to a given fraction method'. By employing the Avrami equation, it was found that n values generally increase with increasing temperature in a wide range implying that the nucleation and growth mechanism is probably temperature-dependent. It is likely that in spinel, at a relatively lower transformation temperature, after nucleation sites saturated, the growth of the new phase starts on the surface and gradually moves inwards. At high temperatures, however, after nucleation sites saturated, the growth starts both on the surface as well as at the interior.

• Journal of Korea Foundry Society
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• v.37 no.5
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• pp.148-156
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• 2017

The effects of minor additives on the casting properties of AC4A aluminum alloys were investigated. Measurements of the cooling curve and microstructure observations were conducted to analyze the effects of Ti-B and Sr minor elements during the solidification process. A fine grain size and an increase in the crystallization temperature for the ${\alpha}-Al$ solution were evident after the addition of 0.1wt% Al-5%Ti-1%B additive. The modification effect of the eutectic $Mg_2Si$ phase with the addition of 0.05% Al-10%Sr additive was prominent. A fine eutectic $Mg_2Si$ phase and a decrease in the growth temperature of the eutectic $Mg_2Si$ phase were evident. Fluidity, shrinkage and solidification-cracking tests were conducted to evaluate the castability of the alloy. The combined addition of Al-5%Ti-1%B and Al-10%Sr additives showed the maximum filling length owing to the effect of the fine ${\alpha}-Al$ grains. The macro-shrinkage ratio increased, while the micro-shrinkage ratio decreased with the combined addition of Al-5%Ti-1%B and Al-10%Sr additives. The macro-shrinkage ratio was nearly identical, while the micro-shrinkage ratio increased with the addition of the Al-10%Sr additive. The tendency of the occurrence of solidification cracking decreased owing to the effect of the fine ${\alpha}-Al$ grains and the modification of the $Mg_2Si$ phase with the combined addition of Al-5%Ti-1%B and Al-10%Sr additives.

• Journal of the Korean Ceramic Society
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• v.20 no.1
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• pp.25-30
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• 1983

This experiment was studied in the system of (1-x) CaO MgO $2SiO-Al_2O_3$ to investigate forming of solid solution. The technique empolyed was the well known water-quenching method. Differential thermal analysis of the each glass water quenched indicated that under 30 mole% $Al_2O_3$ was lowered with increasing of the amount of $Al_2O_3$ It was supposed by X-ray diffraction patterns of each specimen sintered at various temperature that only solid solution was formed under the 30mole % $Al_2O_3$ compositions solid solution and anorthite were formed at the 20mole% $Al_2O_3$ composition anorthite solid solution and spinel$(MgAl_2O_4)$ were formed over the 40mole% $Al_2O_3$ compositions. The maximum density and thermal expanison coefficient was 2.89g/cm 7.74x106./C$^{\circ}$ respectively in the composi-tion of 10 mole% $Al_2O_3$ . All the specimens showed linear thermal expansion behavior. Microhardness was as high as 850kg/nm2 in the composition of 5, 10, 20 mole % $Al_2O_3$ and dielectric constant was 7.3-6.9.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09b
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• pp.1000-1001
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• 2006

Two atomized alloy powders were pre-compacted by cold and subsequently hot forged at temperatures ranging from 653K to 845K. The addition of Cu and Mg causes a decrease in the eutectic reaction temperature of Al-10Si-5Fe-1Zr alloy from 841K to 786K and results in a decrease of flow stress at the given forging temperature. TEM observation revealed that in addition to Al-Fe based intermetallics, $Al_2Cu$ and $Al_2CuMg$ intermetallics appeared. The volume fraction of intermetallic dispersoids increased by the addition of Cu and Mg. Compressive strength of the present alloys was closely related to the volume fraction of intermetallic dispersoids.

• 한국신재생에너지학회:학술대회논문집
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• 2010.06a
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• pp.83.2-83.2
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• 2010

최근, 원유 가격의 상승으로 인해 태양에너지에 대한 관심이 크게 증가되고 있다. 그러나 이러한 태양전지용 Si(SoG-Si)의 대부분을 차지하는 태양전지급 다결정 실리콘 원료를 대부분 수입에 의존하고 있는 실정이다. 이에 대한 기술적 대응으로서 최근에는 고비용의 기상법을 해결하기 위하여 야금학적인 정련법을 이용한 제조기술 개발이 세계적으로 주목받고 있으며, 야금학적 정련기술은 지적재산권에 관한 기술적 배타성을 제고 할 수 있을 뿐 만 아니라 기상법의 Si 대비 낮은 품위 에도 불구하고 태양전지용 실리콘의 사용가능성을 제시함으로서 활발한 연구와 함께 실용화기술로 대두되고 있다. 그러므로 본 연구는 기존 사용 중인 고가의 기상법 폴리실리콘 제조와 달리, 생산 가격경쟁력이 있는 규석광으로부터 고순도금속 및 태양전지급 폴리실리콘 생산 연속 종전기술을 개발하고자 하였다. 금속급 Si(이하 MG-Si)으로부터 경제적인 SoG-Si을 제조하기 위한 공정 개발을 일환으로 MG-Si 중 불순물인 P 원소를 효과적으로 정련할 수 있는 슬래그 정련기술 개발과 슬래그설계 기술개발을 기본목표로 설정하여 고찰하였다. 용융 Silicon과 슬래그계면에 설정되는 산소분압제어에 따른 슬래그의 P의 이온 안정성을 변화시킴으로서, MG-Si중 P를 분리제거를 기본개념으로 설정하였다. 염기성 산화물로 산소이온이 공급됨을 이용하여 염기도에 따른 분배비를 고찰한 결과, CaO의 활동도가 증가함에 따라 슬래그 중 $O^{2-}$의 활동도와 함께 phosphide 이온의 안정성이 증가함을 확인하였다. 그리고 슬래그로부터 실리콘 중 Ca의 용해도에 따른 분배비를 확인하기 위해 실험 후 Si에서 Ca의 성분을 분석한 결과, 실리콘 중 Ca 용해도는 염기도($a_{CaO}/\sqrt{a_{SiO_2}}$)의 증가와 함께 증가하였으며, Ca의 용해도 증가는 탈린능을 증가시킨다는 것을 알 수 있었다. 또한 수소분압을 변화시켜 인의 증기압변화 및 기화정련 효과를 알 수 있었으며, acid leaching을 통해 잔존해있는 불순물을 추가적으로 정련될 수 있는 가능성을 확인할 수 있었다.