• Horticultural Science & Technology
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• v.30 no.3
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• pp.250-255
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• 2012

The effect of different source silicon ($CaSiO_3$, $K_2SiO_3$, and $NaSiO_3$) and their application methods (foliar application and subirrigation) on the growth of potted kalanchoe was investigated. Rooted terminal cuttings of Kalanchoe blossfeldiana 'Peperu' were transplanted into 10.5 cm plastic pots containing a commercial growing medium. Then, a nutrient solution, containing 0 or $50mg{\cdot}L^{-1}$ Si as $K_2SiO_3$, $Na_2SiO_3$, or $CaSiO_3$ and adjusted to EC 1.4-$1.6mS{\cdot}cm^{-1}$ and pH 6.0, was supplied through subirrigation along with the nutrient solution or by a foliar application. Plants were grown in a glasshouse under a mean temperature of $23^{\circ}C$ and RH of 70-80%. After 12 weeks of cultivation, plant growth characteristics and leaf tissue contents of P, K, Ca, Mg, Na, S, and Si were measured. Both subirrigational supply and foliar application of Si decreased the plant height and flower stem length. However, the plant condition in the foliar application resulted in disease-like soft rot on the leaf. Among three silicon sources tested, $CaSiO_3$ supplied through a subirrigation system increased shoot tissue contents of Si and chlorophyll as compared to the $Na_2SiO_3$ or $K_2SiO_3$ treatment. Shoot tissue contents of Ca, K, and Na increased when the plant was supplied with $CaSiO_3$, $K_2SiO_3$, and $Na_2SiO_3$, respectively. Subirrigational supply of $K_2SiO_3$ and $NaSiO_3$ decreased the shoot tissue contents of Ca and Mg, and K and Ca, respectively. Therefore, $CaSiO_3$ supplied through a subirrigation system could improve plant quality of kalanchoe 'Peperu' making compact potted plants.

• Journal of Korea Foundry Society
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• v.9 no.6
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• pp.474-482
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• 1989

The aim of this research is to investigate the effects of gas bubbles on the formation of spheroidal graphite in cast iron, Fe-Si-8%Mg alloy, mischmetal hydride($MmH_2$) and $CaCO_3$, which discharge various amounts of Mg, $H_2$ and $Co_2$, gases, were added to Fe-3.9% C-2.0%Si melt and the melt was innoculated with 0.3wt% of 75%Fe-Si. The spheroidal graphites and/or compacted vermicular graphites were produced with more than 0.625cc/g of Mg gas or more than 0.3125cc/g of $H_2$ gas while $CO_2$ gas did not contribute to graphite spheroidization. Nodule counts increased with the amount of Fe-Si-Mg added ; but they decreased with the amount of $MmH_2$ added because the number of effective gas bubbles decrease with the increase in Mm residual. The bull's eye structure was revealed with 0.625cc/g, 1.25cc/g of Mg and 0.3125cc/g of $H_2$ ; the ledeburite structure was revealed with more than 0.625cc/g of $H_2$.

• Journal of the Korean Ceramic Society
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• v.44 no.2 s.297
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• pp.93-97
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• 2007

High purity Si powder was prepared in the system of $SiO_2-Mg$ combustion reaction. Various conditions of combustion reaction and leaching were investigated. As the particle size of Mg decreased and the compaction pressure increased the quantity of the unreacted power was decreased. In the acid leaching of MgO, increasing particle size, reaction temperature, rotating speed and reaction time made leaching effect low. Final Si powder produced by combustion and leaching reaction, has a high purity of 99.9% with irregular shape.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.28 no.2
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• pp.80-84
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• 2018

Mg alloys AZ31 and AZ91 were Plasma-Electrolytic-Oxidized in Na-P and Na-Si system electrolyte at various concentration, applied voltage and time. Thickness and surface roughness of PEO coating were examined. Salt spraying test were carried out to compare their corrosion resistances. Generally, corrosion resistances rate were increased as thickness and crystallinity increasing. Size of pore being larger, long term corrosion resistance decreased. It is turned out that $Mg_2SiO_4$ and other crystalline phase rather than MgO might be increase corrosion resistance dramatically.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.11 no.3
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• pp.127-131
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• 2001

The effect of grain shape on the grain growth behavior of oxide system was investigated as afunction of liquid content during liquid phase sintering. As a model system, the solid grains of $Al_{2}O_{3}$ and MgO were selected during liquid phase sintering, i.e. faceted shape of $Al_{2}O_{3}$ in $CaAl_{2}Si_{2}O_{8}$ liquid phase and spherical shape of MgO in $CaMgSiO_{4}$ liquid phase. The average grain size of MgO with spherical shape was decreased with increasing the liquid phase content, whereas that of $Al_{2}O_{3}$ with faceted shape was independent of liquid phase content. In the case of $Al_{2}O_{3}$ grains with faceted shape, which interfaces are expected to be atomically flat, are likely to grow by the interfacial reaction controled process. Whereas, in the case of MgO grains with spherical shape, which interface are expected to be atomically rough, are likely to grow by the diffusion controlled process.

• The Journal of the Petrological Society of Korea
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• v.3 no.2
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• pp.156-170
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• 1994

The talc ore deposits can be divided into chloritic and dolomitic ores according to mineral assemblages. The former is mainly composed of chlorite and talc accompanied with dolomite, muscovite and opaque mineral, and the latter of dolomite and talc with serpentine, calcite and magnesite in places. Talc was originated from chlorite and serpentine. Carbonate minerals were formed either directly from the introduced hydrothermal solution or secondarily as a by-product of steatitization of chlorite and serpentine. The process of talc formation may be governed by the chemical composition of the host rocks and the amount and/or chemical composition of the hydrothermal solution which may be different in places. However, the representative reactions producing talc from chlorite and serpentine are as follows : (1) chlorite+$Mg^{++}+Si^{4+}+H_2O$=talc, (2) chlorite+$Mg^{++}+Si^{4+}+Ca^{++}+CO_2+O_2+H_2O$=talc+ dolomite+ magnesite, and (3) serpentine +$Mg^{++}+Fe^{++}+Si^{4+}+Ca^{++}+CO_2+H_2O$=talc+dolomite. The reactions indicate that the carbonate minerals can be formed when the hydrothermal solution have high $fO_2$ and $fCO_2$. The steatitization might be proceeded by the hydrothermally metasomatic reaction between chlorite schist or chlorite gneiss intercalated in the granitic gneiss and hydrothermal solution accompanied to the wet granitization.

• Korean Journal of Materials Research
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• v.18 no.2
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• pp.92-97
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• 2008

In spray pyrolysis, the effects of the preparation temperature, flow rate of the carrier gas and concentration of the spray solution on characteristics such as the morphology, size, and emission intensity of $Ca_8Mg(SiO_4)_4Cl_2:Eu^{2+}$ phosphor powders under long-wavelength ultraviolet light were investigated. The phosphor powders obtained post-treatment had a range of micron sizes with regular morphologies. However, the composition, crystal structure and photoluminescence intensity of the phosphor powders were affected by the preparation conditions of the precursor powders. The $Ca_8Mg(SiO_4)_4Cl_2:Eu^{2+}$ phosphor powders prepared at temperatures that were lower and higher than $700^{\circ}C$ had low photoluminescence intensities due to deficiencies related to the of Cl component. The phosphor powders with the deficient Cl component had impurity peaks of $Ca_2SiO_4$. The optimum flow rates of the carrier gas in the preparation of the $Ca_8Mg(SiO_4)_4Cl_2:Eu^{2+}$ phosphor powders with high photoluminescence intensities and regular morphologies were between 40 and 60 l/minute. Phosphor powders prepared from a spray solution above 0.5 M had regular morphologies and high photoluminescence intensities.

• Journal of the Korean Ceramic Society
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• v.43 no.5 s.288
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• pp.304-308
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• 2006

We have synthesized a $Eu^{2+}-activated\;Sr_3MgSi_2O_8$ blue phosphor and $(Sr,Ba)_2SiO_4$ yellow phosphor and prepared white LEDs by combining these phosphors with a InGaN UV LED chip. Three distinct emission bands from the InGaN-based LED and the two phosphors are clearly observed at 405 nm, 460 nm and at around 560 nm, respectively. The 405 nm emission band is due to a radiative recombination from a InGaN active layer. This blue emission was used as an optical transition of the $Sr_3MgSi_2O_8:Eu$ blue phosphor and $(Sr,Ba)_2SiO_4:Eu$ yellow phosphor. The 460 nm and 560 nm emission band is ascribed to a radiative recombination of $Eu^{2+}$ impurity ions in the $Sr_3MgSi_2O_8:Eu$ and $(Sr,Ba)_2SiO_4$ host matrix. As a consequence of a preparation of UV White LED lamp using the $Sr_3MgSi_2O_8:Eu$ blue phosphor and $(Sr,Ba)_2SiO_4:Eu$ yellow phosphor, the highest luminescence efficiency was obtained at the ration of epoxy/two phosphor (1/0.2361). At this time, the CIE chromaticity was CIE x = 0.3140, CIE y = 0.3201 and CCT (6500 K).

• Journal of Biomedical Engineering Research
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• v.25 no.5
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• pp.383-389
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• 2004

A commercially pure Ti(CP-Ti) and Ti-25wt％Pd alloy for dental applications were cast into a phosphate-bonded Al$_2$ $O_3$/ $SiO_2$ investment mold and the surface of the casting specimens were investigated by means of SEM/EDS, XRD and XPS. The addition of 25wt％Pd in CP-Ti showed a moderate mold reaction owing to the considerable lowering of melting point. XRD analysis of the investment after burn-out treatment revealed that it consisted essentially of $SiO_2$, Al$_2$ $O_3$, P$_2$O$\_$5/, Mg$_3$(P $O_4$)$_2$, AlP $O_4$, Mg$_2$ $SiO_4$, MgAl$_2$ $O_4$ The mold reaction products were Ti$\_$5/Si$_3$ and Ti $O_2$ in case of CP-Ti casting and Ti $O_2$ and SiO$\_$x/ in case of Ti-25wt％ Pd casting.

• Progress in Superconductivity
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• v.10 no.1
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• pp.35-39
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• 2008

By using the hybrid physical-chemical vapor deposition (HPCVD) technique, we have fabricated $MgB_2$ thick films on $Al_{2}O_3$ substrates with various impurity layers of Ni, Ti, and SiC. We have found a significant enhancement of the critical current density ($J_c$) for $MgB_2$ films grown on impurity layered substrates, indicating that additional impurity layers were provided as possible pinning sites by chemical doping in $MgB_2$ films. All samples doped by Ni, Ti, and SiC were observed to have high superconducting transition temperatures of 39 - 41 K. The $J_c$ of $MgB_2$ films grown on SiC impurity layered substrates showed three times higher than that of undoped films at high magnetic fields above 1 T.