• Title/Summary/Keyword: $Mg_{2}Si$

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Difference in Solidification Process between Al-Mg Alloy and Al-Si Alloy in Die-Casting (Al-Mg계 합금과 Al-Si계 합금의 다이캐스팅 응고과정의 차이)

  • Choi, Se-Weon;Kim, Young-Chan;Cho, Jae-Ik;Kang, Chang-Seog;Hong, Sung-Kil
    • Korean Journal of Materials Research
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    • v.22 no.2
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    • pp.82-85
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    • 2012
  • The effect of the alloy systems Al-Mg alloy and Al-Si alloy in this study on the characteristics of die-casting were investigated using solidification simulation software (MAGMAsoft). Generally, it is well known that the casting characteristics of Al-Mg based alloys, such as the fluidity, feedability and die soldering behaviors, are inferior to those of Al-Si based alloys. However, the simulation results of this study showed that the filling pattern behaviors of both the Al-Mg and Al-Si alloys were found to be very similar, whereas the Al-Mg alloy had higher residual stress and greater distortion as generated due to solidification with a larger amount of volumetric shrinkage compared to the Al-Si alloy. The Al-Mg alloy exhibited very high relative numbers of stress-concentrated regions, especially near the rib areas. Owing to the residual stress and distortion, defects were evident in the Al-Mg alloy in the areas predicted by the simulation. However, there were no visible defects observed in the Al-Si alloy. This suggests that an adequate die temperature and casting process optimization are necessary to control and minimize defects when die casting the Al-Mg alloy. A Tatur test was conducted to observe the shrinkage characteristics of the aluminum alloys. The result showed that hot tearing or hot cracking occurred during the solidification of the Al-Mg alloy due to the large amount of shrinkage.

Electrical and Mechanical Properties of Cu(Mg) Film for ULSI Interconnect (고집적 반도체 배선용 Cu(Mg) 박막의 전기적, 기계적 특성 평가)

  • 안재수;안정욱;주영창;이제훈
    • Journal of the Microelectronics and Packaging Society
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    • v.10 no.3
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    • pp.89-98
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    • 2003
  • The electrical and mechanical properties of sputtered Cu(Mg) films are investigated for highly reliable interconnects. The roughness, adhesion, hardness and resistance to thermal stress of Cu(Mg) film annealed in vacuum at $400^{\circ}C$ for 30min were improved than those of pure Cu film. Moreover, the flat band voltage(V$_{F}$ ) shift in the Capacitance-Voltage(C-V) curve upon bias temperature stressing(BTS) was not observed and leakage currents of Cu(Mg) into $SiO_2$ were three times less than those of pure Cu. Because Mg was easy to react with oxide than Cu and Si after annealing, the Mg Oxide which formed at surface and interface served as a passivation layer as well.

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Silicon Application on Standard Chrysanthemum Alleviates Damages Induced by Disease and Aphid Insect

  • Jeong, Kyeong-Jin;Chon, Young-Shin;Ha, Su-Hyeon;Kang, Hyun-Kyung;Yun, Jae-Gill
    • Horticultural Science & Technology
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    • v.30 no.1
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    • pp.21-26
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    • 2012
  • To elucidate the role of silicon in biotic stress such as pests and diseases, standard chrysanthemum was grown in pots filled with soil without application of pesticide and fungicide. Si treatment was largely composed of three groups: $K_2SiO_3$ (50, 100, and $200mg{\cdot}L^{-1}$), three brands of silicate fertilizer (SiF1, SiF2, and SiF3) and tap water as a control. Si sources were constantly drenched into pots for 14 weeks. Application high concentration $K_2SiO_3$ ($200mg{\cdot}L^{-1}$) and three commercial Si fertilizers for 14 weeks improved growth parameters such as plant height and the number of leaves. In the assessment of disease after 4 weeks of Si treatment, percentage of infected leaves was not significantly different from that of control. After 14 weeks of Si treatment, however, the infected leaves were significantly reduced with a 20-50% decrease in high concentration ($200mg{\cdot}L^{-1}$) of potassium silicate and all commercial silicate fertilizers. Colonies of aphid insect (Macrosiphoniellas anborni) were also reduced in Si-treated chrysanthemum, showing 40-57% lower than those of control plants. Accumulation of silicon (approximately $5.4-7.1mg{\cdot}g^{-1}$ dry weight) in shoots of the plants was higher in Si-supplemented chrysanthemum compared to control plants ($3.3mg{\cdot}g^{-1}$ dry weight). These results indicate that using potassium silicate or silicate fertilizer may be a useful for management of disease and aphid insect in soil-cultivated chrysanthemum.

Fabrication and Mechanical Property of $Al_2$O$_.3$/Al Composite by Pressureless Infiltration (무가압 침윤법에 의한 $Al_2$O$_.3$/Al 복합재료 제조와 기계적 특성)

  • 이동윤;박상환;이동복
    • Journal of the Korean Ceramic Society
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    • v.35 no.3
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    • pp.303-309
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    • 1998
  • The fabrication of Al2O3/Al composite by pressureless infiltration was investigated by the change of Mg and Si content in Al alloy infiltration process and infiltration atmosphere. The effect of alloying elements infiltration atmosphere and interfacial reactants between Al alloy matrix and Al2O3 particles were in-vestigated in terms of bendingstrength and harness test,. The fabrication of Al2O3/Al composite by the vestigated in terms of bending strength and hardness test. The fabrication of Al2O3/Al composite by the pressureless infiltration was done in nitrogen atmosphere with Mg in Al alloy. It was successfully fabricated at $700^{\circ}C$ according to Mg contents in Al alloy and infiltration condition. Because Mg in the Al alloy and ni-trogen atmosphere of infiltratio condition produced Mg-N compound(Mg3N2) it decreased the wetting an-gle between molten Al alloy and Al2O3 particles by coating on surface of Al2O3 particles. The fracture strength of Al2O3/Al-Mg composite was 800MPa and Al2O3/Al-Si-Mg composite was 400MPa. Si in Al alloy decreased the interfacial strength between Al alloy matrix and Al2O3 particles.

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Study on RF power dependence of BST thin film by the different substrates (기판에 따른 BST 박막의 RF Power 의존성)

  • 최명률;이태일;박인철;김홍배
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.07a
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    • pp.22-25
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    • 2002
  • In this paper, we deposited MgO buffer layer on p-type (100)Si substrate in the condition of substrate temperature 400$^{\circ}C$, working gas ratio Ar:O$_2$=80:20, RF Power 50W, working pressure 10mtorr, and the thickness of the film was about 300${\AA}$. Then we deposited Ba$\sub$0.5/Sr$\sub$0.5/TiO$_3$ thin film using RF Magnetron sputtering method on the MgO/Si substrate in various RF power of 25W, 50W, 75W. The film deposited in 50W showed the best crystalline from the XRD measurement. To know the electrical properties of the film, we manufactured Al/BSTMgO(300${\AA}$)/Si/Al structure capacitor. In the result of I-V measurement, The leakage current density of the capacitor was lower than 10$\^$-7/A/$\textrm{cm}^2$ at the range of ${\pm}$150kV/cm. From C-V characteristics of the capacitor, can calculate the dielectric constant and it was 305. Finally we deposited BST thin film on bare Si substrate and (100)MgO substrate in the same deposition condition. From the comparate of the properties of these samples, we found the properties of BST thin film which deposited on MgO/Si substrate were better than on bare Si substrate and similar to on MgO substrate.

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A Dry-patterned Cu(Mg) Alloy Film as a Gate Electrode in a Thin Film Transistor Liquid Crystal Displays (TFT- LCDs) (TFT-LCDs 게이트 전극에 적용한 Cu(Mg) 합금 박막의 건식식각)

  • Yang Heejung;Lee Jaegab
    • Korean Journal of Materials Research
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    • v.14 no.1
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    • pp.46-51
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    • 2004
  • The annealing of a Cu(4.5at.% Mg)/$SiO_2$/Si structure in ambient $O_2$, at 10 mTorr, and $300-500^{\circ}C$, allows for the outdiffusion of the Mg to the Cu surface, forming a thin MgO (15 nm) layer on the surface. The surface MgO layer was patterned, and successfully served as a hard mask, for the subsequent dry etching of the underlying Mg-depleted Cu films using an $O_2$ plasma and hexafluoroacetylacetone [H(hfac)] chemistry. The resultant MgO/Cu structure, with a taper slope of about $30^{\circ}C$ shows the feasibility of the dry etching of Cu(Mg) alloy films using a surface MgO mask scheme. A dry-etched Cu(4.5at.% Mg) gate a-Si:H TFT has a field effect mobility of 0.86 $\textrm{cm}^2$/Vs, a subthreshold swing of 1.08 V/dec, and a threshold voltage of 5.7 V. A novel process for the dry etching of Cu(Mg) alloy films, which eliminates the use of a hard mask, such as Ti, and results in a reduction in the process steps is reported for the first time in this work.

Effect of Sludge Formation on the Thickness of Die Soldering Reaction Layer in Al-9Si-0.3Mg Casting Alloy (Al-9Si-0.3Mg 주조용 합금에서 Sludge 형성이 금형소착 반응층 두께에 미치는 영향)

  • Kim, Heon-Joo
    • Journal of Korea Foundry Society
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    • v.30 no.2
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    • pp.76-82
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    • 2010
  • Effect of reaction time and sludge formation on the thickness of die soldering reaction layer has been studied in Al-9Si-0.3Mg casting alloy. Ternary ${\alpha}_{bcc}-Al_8Fe_2Si$ and ${\alpha}_{hcp}-Al_8Fe_2Si$ intermetallic compounds formed at the interface of SKD61 tool steel by interaction diffusion of Al, Fe and Si atoms after 0.5hr and 6hr immersion time, respectively. Binary ${\eta}-Fe_2Al_5$ additionally formed at the interface of SKD61 tool steel after 10hr immersion time. Thickness of soldering reaction layer in die surface increased as immersion time increased from 0.5hr to 24hr. Sludge formation was ascertained in the samples which were immersed in the melts more than 10hr. Reaction of die soldering after sludge formation was more accelerated than that of before sludge formation due to a decrease in Fe content, followed by higher diffusion rate of Al in the melt by sludge formation.

Change of Particle Size of Magnesium Silicate According to Reaction Conditions and Evaluation of Its Polyol Purification Ability (반응 조건에 따른 규산마그네슘의 입도 변화 및 폴리올 정제 능력평가)

  • Yoo, Jhongryul;Jeong, Hongin;Kang, Donggyun;Park, Sungho
    • Korean Chemical Engineering Research
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    • v.58 no.1
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    • pp.84-91
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    • 2020
  • The efficiency of the synthetic magnesium silicate used in basic polyols and edible oil purification is evaluated by its purification ability and filtration rate and is affected by the particle size and surface area of magnesium silicate. In this study, it was investigated the change on the particle size of magnesium silicate was influenced by the reaction temperature, injection rate, injection order (Si, Mg) and Mg/Si reaction mole ratio. The synthesized magnesium silicate was compared and analyzed for the synthesis, grinding, and refining processes. In the synthesis process, the reaction temperature and feed rate did not affect the average particle size change of magnesium silicate, while the reaction molar ratio of Mg / Si and the order of injection acted as main factors for the change of average particle size. The average particle size of magnesium silicate increased by 8.7 ㎛ from 54.4 ㎛ to 63.1 ㎛ at Mg injection when Mg molar ratio increased from 0.125 to 0.500, and increased by about 4.8 ㎛ from 47.3 ㎛ to 52.1 ㎛ at Si injection. The average particle size according to the order of injection was 59.1 ㎛ for Mg injection and 48.4 ㎛ for Si injection and the difference was shown 10.7 ㎛, therefore the filtration rate was about 2 times faster under the condition of Mg injection. That is, as the particle size increases, the filtration time is shortened and washing filtration rate can be increased to improve the productivity of magnesium silicate. The cake form of separated magnesium silicate after filtration becomes a solid through drying process and is used as powdery adsorbent through the grinding process. As the physical strength of the dried magnesium silicate increased, the average particle size of the powder increased and it was confirmed that this strength was affected by the reaction molar ratio. As the reaction molar ratio of Mg / Si increased, the physical strength of magnesium silicate decreased and the average particle size after grinding decreased by about 40% compared to the average particle size after synthesis. This reduction of strength resulted in an improvement of the refining ability due to the decrease of the average particle size and the increase of the amount of fine particle after the pulverization, but it resulted in the decrease of the purification filtration rate. While the molar ratio of Mg/Si was increased from 0.125 to 0.5 at Mg injection, the refining ability increased about 1.3 times, but the purification filtration rate decreased about 1.5 times. Therefore, in order to improve the productivity of magnesium silicate, the reaction molar ratio of Mg / Si should be increased, but in order to increase the purification filtration rate of the polyol, the reaction molar ratio should be decreased. In the synthesis parameters of magnesium silicate, the order of injection and the reaction molar ratio of Mg / Si are important factors affecting the changes in average particle size after synthesis and the changes of particle size after grinding due to the changes of compressive strength, therefore the synthetic parameter is an important thing that determines productivity and refining capacity.

Thermal properties of glass-ceramics made with zircon and diopside powders

  • Lee, Dayoung;Kang, Seunggu
    • Journal of Ceramic Processing Research
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    • v.19 no.6
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    • pp.504-508
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    • 2018
  • Diopside is a ceramic material with excellent physical and chemical properties. However, when it is applied as an LED packaging material, heat dissipation of the LED element is not sufficient due to its relatively lower thermal conductivity, which may cause degradation of the LED function. In this study, glass-ceramics based on a $ZrO_2-CaO-MgO-SiO_2$ system, in which diopside is the main crystal phase, were prepared by heat-treating the glass, which was composed of zircon ($ZrO_2-SiO_2$) powders and diopside ($CaO-MgO-2SiO_2$) powders. The possibility of using the glass-ceramics as a packaging material for LEDs was then investigated by analyzing the density, shrinkage, thermal conductivity, and phases generated according to the amount of zircon powder added. The density and shrinkage of specimens decreased slightly and then increased again with the amount of $ZrO_2-SiO_2$ added within a range of 0~0.38 mol. Even though the crystal phase of zircon does not appear in the $ZrO_2-CaO-MgO-SiO_2$ system, the glass containing 0.38 mol zircon powder showed the highest thermal conductivity, 1.85 W/mK, among the specimens fabricated in this study: this value was about 23% higher than that of pure diopside. It was found that the thermal conductivity of the glass-ceramics based on a $ZrO_2-CaO-MgO-SiO_2$ system was closely related to the density, but not to the phase type. Zirconia ($ZrO_2$), a component oxide of zircon, plays an important role in increasing the density of the specimen. Furthermore the thermal conductivity of glass-ceramics based on a $ZrO_2-CaO-MgO-SiO_2$ system showed a nearly linear relationship with thermal diffusivity.

Strain Amplitude Dependence of Damping Capacity in Mg-AI-Si Alloy (Mg-Al-Si 합금에서 진동감쇠능의 변형진폭 의존성)

  • Jun, Joong-Hwan
    • Journal of the Korean Society for Heat Treatment
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    • v.24 no.3
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    • pp.144-148
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    • 2011
  • Change in damping capacity with strain amplitude was studied in Mg-Al-Si alloy in as-cast, solution-treated and aged states, respectively. The as-cast microstructure of the alloy is characterized by eutectic ${\beta}$($Mg_{17}Al_{12}$) phase and Chinese script type $Mg_2Si$ particles. The solution treatment dissolved the ${\beta}$ phase into the matrix, while the aging treatment resulted in the distribution of continuous and discontinuous type ${\beta}$ precipitates. The solution-treated microstructure showed better damping capacity than as-cast and aged microstructures both in strain-dependent and strain-independent damping regions. The decrease in second-phase particles which weakens the strong pinning points on dislocations and distribution of solute atoms in the matrix, would be responsible for the enhanced damping capacity after solution treatment.