• Progress in Superconductivity and Cryogenics
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• v.8 no.1
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• pp.1-4
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• 2006

The $MgB_2$ tapes with several metal powder addition were fabricated by PIT method with or without heat treatment. The $J_c$ value of $5.600A/cm^2$ and $16.000A/cm^2$ at 4.2 K and 5 T were obtained for the $MgB_2$ tape and 10 vol % of Cu added $MgB_2$ tape without heat treatment respectively. The $J_c$ value of $8.000A/cm^2$ and $35,000A/cm^2$ at 4.2 K and 5 T were obtained for the $MgB_2$ tape and 10 vol. % of Al added $MgB_2$ tape with heat treatment, respectively. The $J_c-B$ curve shows enhancement in $J_c$ under magnetic field. which suggests enhancement in workability and grain connectivity with several metal powder addition.

• Progress in Superconductivity and Cryogenics
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• v.9 no.2
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• pp.15-18
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• 2007

The sub micron sized spherical $MgB_2$ powders were synthesized by spray reaction method. $MgB_2$ tapes with Al addition were fabricated by Powder in Tube (PIT) method. The superconducting property and microstructure of Al doped $MgB_2$ tapes were characterized by X-ray diffraction, optical microscopy and transport measurement under magnetic field. The $J_c$ value of $MgB_2$ tapes was increased with 10 vol. % Al addition. The $J_c$ value of 5,500 A/$cm^2$ and 11,000 A/$cm^2$ at 4.2 K and 5 T were obtained for the $MgB_2$ tape and 10 vol. % of Al added $MgB_2$ tape without heat treatment, respectively. The $J_c$ value of 8,000 A/$cm^2$ and 33,000 A/$cm^2$ at 4.2 K and 5 T were obtained for the $MgB_2$ tape and 10 vol. % of Al added $MgB_2$ tape with heat treatment, respectively. The $J_c$-B curves show enhancement in $J_c$ (B), which suggests that the microstructure and transport properties of $MgB_2$ tapes have been improved with Al addition.

• Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
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• 2002.02a
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• pp.3-4
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• 2002

The stainless steel sheathed MgB$_2$ tapes with Cu addition were fabricated by PIT method without heat treatment. The $J_{c}$ value of 5,600 A/ $cm^{2}$and 16,000 A/$cm^{2}$ at 4.2 K and 5 T were obtained for the $MgB_{2}$ tape and 10 vol % of Cu added $MgB_{2}$ tape respectively. The $J_{c}$-B curve shows enhancement in J$_{c}$ under magnetic field, which suggests enhancement in flux pinning property with Cu addition.n.

• Progress in Superconductivity and Cryogenics
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• v.16 no.2
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• pp.20-23
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• 2014

We have grown $MgB_2$ on SiC buffer layer by using metallic Hastelloy tape as the substrate. Hastelloy tape was chosen for its potential practical applications, mainly in the power cable industry. SiC buffer layers were deposited on Hastelloy tapes at 400, 500, and $600^{\circ}C$ by using a pulsed laser deposition method, and then by using a hybrid physical-chemical vapor deposition technique, $MgB_2$ films were grown on the three different SiC buffer layers. An enhancement of critical current density values were noticed in the $MgB_2$ films on SiC/Hastelloy deposited at 500 and $600^{\circ}C$. From the surface analysis, smaller and denser grains of $MgB_2$ tapes are likely to cause this enhancement. This result infers that the addition of SiC buffer layers may contribute to the improvement of superconducting properties of $MgB_2$ tapes.

• Progress in Superconductivity and Cryogenics
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• v.24 no.3
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• pp.30-34
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• 2022

Effects of electron beam (EB) irradiation on the mechanical strength of Cu (conducting sheath) and Nb (diffusion barrier) of Cu/Nb/MgB₂ superconducting was investigated. Wire- and tape-type Cu/Nb/MgB₂ samples were irradiated at E-beam energy of 2.5 MeV and 5 mA and a maximum E-beam dose was 5×10¹⁷ e/m². The hardness value of Cu and Nb region was measured by the Vickers micro-hardness method. In the case of the wire sample, the hardness of Cu and Nb increased proportionally as the dose was increased up to 5×10¹⁷ e/m², whereas in the case of the tape sample, the hardness increased up to a dose of 0.5×10¹⁷ e/m², and decreased slightly 5×10¹⁷ e/m². The hardness increase of Cu and Nb is believed to be due to the decrease of the deformability of Cu and Nb due to the defects formed inside the materials by E-beam irradiation.

• 한국초전도학회:학술대회논문집
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• 2008.08a
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• pp.75-75
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• 2008

• Progress in Superconductivity and Cryogenics
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• v.17 no.3
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• pp.1-4
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• 2015

Production of $MgB_2$ film on metallic Hastelloy with SiC as the buffer layer was achieved by means of hybrid physical-chemical vapor deposition technique, whereas SiC buffer layers with varied thickness of 170 and 250 nm were fabricated inside a pulsed laser deposition chamber. Superconducting transition temperature and critical current density were verified by transport and magnetic measurement, respectively. With SiC buffer layer, the reduced delaminated area at the interface of $MgB_2$-Hastelloy and the slightly increased $T_c$ of $MgB_2$ tapes were clearly noticed. It was found that the upper critical field, the irreversibility field and the critical current density were reduced when $MgB_2$ tapes were buffered with SiC buffer layer. Clarifying the mechanism of SiC buffer layer in $MgB_2$ tape in affecting the superconducting properties is considerably important for practical applications.

• Journal of the Microelectronics and Packaging Society
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• v.9 no.2
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• pp.19-25
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• 2002

Glass composed of $Li_2$O.MgO. $MgF_2$.$SiO_2$.$B_2O_3$ for the fabrication of green sheet was prepared by melting process, and glass ceramics was prepared by the process of nucleation and grystal growth for the glass of $Li_2$O.MgO. $MgF_2$.$SiO_2$.$B_2O_3$ system with Lithium fluorhectorite and Lithium boron fluorphlogopite crystal phase. Powderization of the glass ceramics was carried out by water swelling. The average particle size at this point was 2.574 $\mu\textrm{m}$. Slurry was prepared for green sheet using high viscous sol fabricated by water swelling, which shows cleavage phenomenon in prepared glass ceramics. The optimum ratio of powder to water for the tape casting was 18:100, and its viscosity was 11,000~14,000 cps.

• 한국초전도학회:학술대회논문집
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• 2007.07a
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• pp.62-62
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• 2007

• Electrical & Electronic Materials
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• v.9 no.7
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• pp.652-659
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• 1996

Sintering characteristics and electrical properties of xPb(Mg$_{1}$8/Te$_{1}$8/Mn$_{1}$4/Nb$_{1}$2/) $O_{3}$-(1-x) Pb (Zr$_{1}$2/ $Ti_{1}$2/) $O_{3}$ (x=0.075, 0.1, 0.125) ceramics are investigated. A sintering temperature of ceramics could be reduced to 950.deg. C by a reaction between PbO and B site compound material. The physical properties of 0.1Pb(Mg, Te, Mn, Nb) $O_{3}$ - 0.9Pb(Zr, Ti) $O_{3}$ bulk ceramic with 3wt% glass frit(0.857PbO-0.143W $O_{3}$) were following : den = 7.95 g/cm$^{3}$, T$_{c}$=340.deg. C, .epsilon.$_{33}$= 754, k$_{31}$=0.3 and Q.=1780. The 3-layer piezoelectric transformer by using a tape casting method showed a good monolithic structure, and its voltage setup ratio was 2.5 times higher than that of a single device by using bulk ceramics.s.s.