• 한국분말재료학회지
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• 제14권6호
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• pp.367-371
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• 2007

P/M high speed steel (1.26% C, 4.42% Cr, 6.54% W, 4.92% Mo, 3.21 % V, 8.77% Co, bal. Fe) was applied to hot former die. It showed that the die life became 2.7 times higher than that of cast/wrought SKH 55 tool steel which is commercially used. The increase of die life was corresponding to the improved hardness and transverse rupture strength of PM high speed steel due to the finer grain and carbide as well as the uniform carbide distribution. The P/M high speed steel with the promoted die life could be an alternative to the conventional SKH55.

• 소성∙가공
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• 제17권7호
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• pp.507-510
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• 2008

Effect of V addition on the precipitation behavior and strength of Fe-36Ni based high strength Invar alloy for power transmission wire was investigated. Fe-36Ni Invar alloy plates were fabricated using conventional ingot casting followed by hot rolling. High strength can be obtained through precipitation hardening and strain hardening by cold rolling. Simulation using FactSage$^{(R)}$ revealed that equilibrium phases which can be formed are two kinds of MC-type precipitates, $Mo_{2}C$ and $M_{23}C_6$ carbide. The latter stoichiometric carbide was expected to be formed at relatively lower temperature of $800^{\circ}C$.

• 한국분말재료학회지
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• 제1권2호
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• pp.135-144
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• 1994

Silicon carbide powder was prepared from mixtures of Sangdong silica sand and carbon black by SHS (Self propagating High temperature Synthesis) method which utilizes magnesiothermic reduction of silica. In the powder preparation process, the reacted powder was leached by chloric acid to remove the magnesium oxide and was subsequently roasted to remove free carbon. The impurities were mostly eliminated by hot acid treatment. The resultant SiC powder showed the mean particle size of 0.22 ${\mu}{\textrm}{m}$ and the specific surface area of $66.55 m^2/g$. The SiC powder was mixed with 1 wt% of boron and of carbon to increase densification rate. The mixed powder was pressed and sintered pressurelessly at $2100^{\circ}C$ for 30 min in argon gas. The sintered body showed the hardness of $2550 kg{\cdot}f/mm^2$ and the fracture toughness, KIC of $3.47 MN/m^{3/2}$.

• Tribology and Lubricants
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• 제4권2호
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• pp.36-43
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• 1988

Titanium carbide(TiC) and titanium nitride(TiN) flims were deposited on $Si_3N_4$-TiC composite cutting tools by chemical vapor deposition(CVD) using $TiCl_4-CH_4-H_2$ and $TiCl_4-H_2-N_2$ gas mixtures, respectively. The nonmetal to metal ratio of deposit increases with increasing $m_{C/Ti}$(mole ratio of CH$_4$ to TiCl$_4$ in the input) for TiC coatings and $m_{N/Ti}$(mole ratio of N$_2$ to TiCl$_4$ in the input) for TiN coatings. The nearly stoiahiometric films could be obtained under the deposition condition of $m_{C/Ti}$ between 1.15 and 1.61 for TiC, and that of $m_{N/Ti}$ between 25 and 28 for TiN. Also maximum microhardness of the coatings can be obtained in these ranges. The interfacial region of TiC coatings on $Si_3N_4$-TiC ceramics is wider than that of TiN coatings according to Auger depth profile analysis, which indicates good interfacial bonding for TiC. Experimental results show that TiC coatings have an randomly equiaxed structure and Columnar structure with(220) preferred orientation can be obtained for TiN coatings. And, multilayer coatings have a dense and equiaxed structure.

• Journal of Electrical Engineering and Technology
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• 제13권1호
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• pp.387-392
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• 2018

Static characteristics of SiC (silicon carbide) lateral p-i-n diodes implemented on semi-insulating substrate without an epitaxial layer are inVestigated. On-axis SiC HPSI (high purity semi-insulating) and VDSI (Vanadium doped semi-insulating) substrates are used to fabricate the lateral p-i-n diode. The space between anode and cathode ($L_{AC}$) is Varied from 5 to $20{\mu}m$ to inVestigate the effect of intrinsic-region length on static characteristics. Maximum breakdown Voltages of HPSI and VDSI are 1117 and 841 V at $L_{AC}=20{\mu}m$, respectiVely. Due to the doped Vanadium ions in VDSI substrate, diffusion length of carriers in the VDSI substrate is less than that of the HPSI substrate. A forward Voltage drop of the diode implemented on VDSI substrate is 12 V at the forward current of $1{\mu}A$, which is higher than 2.5 V of the diode implemented on HPSI substrate.

• 열처리공학회지
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• 제20권2호
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• pp.65-71
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• 2007

Microstructural changes and hardness variations in STS 304 steel have been investigated during the processes of carbide dispersion (CD) carburization; carburization, austenitization, subzero treatment and tempering. The carbon content of the surface layer increased up to maximum 4.0% after carburization, and the content was homogenized with the value of 2.3% to the $95{\mu}m$ from the surface after austenitization. The carbide appeared during CD carburization process was $Cr_7C_3$ type, which was composed network carbides along the austenite grain boundaries, square type carbides in the interior of the grain and fine nano-sized carbides. The fine nano-sized carbides precipitated at the austenitization stage and possibly subzero treatment stage were coarsened after tempering at $200^{\circ}C$, resulting the hardness decrease. The tempered steel without subzero treatment increased hardness with increasing time due to the continuous precipitation of fine carbides during tempering. The nano-sized carbide appeared square type morphology.

• 열처리공학회지
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• 제15권2호
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• pp.70-75
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• 2002

The depletion of solid solution elements from matrix and the change of carbides during artificial aging of 2.25CrMo steel at $630^{\circ}C$ were investigated. The Mo and Cr elements were found to be depleted drastically in the early stage of aging. The change of carbides was confirmed by analyzing the XRD patterns of electrolytically extracted carbides. Four type of carbides, $M_{23}C_6$, $M_3C$, $M_2C$ and $M_6C$, were found to exist in the specimen before aging. The amount of $M_6C$ carbides increased with aging time, while that of $M_3C$ carbides diminished after short aging time.

• 센서학회지
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• 제16권2호
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• pp.85-90
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• 2007

This paper presents the growth conditions and characteristics of polycrystalline 3C-SiC (silicon carbide) thin films for M/NEMS applications related to harsh environments. The growth of the 3C-SiC thin film on the oxided Si wafers was carried out by APCVD using HMDS (hexamethyildisilane: $Si_{2}(CH_{3})_{6})$ precursor. Each samples were analyzed by XRD (X-ray diffraction), FT-IR (fourier transformation infrared spectroscopy), RHEED (reflection high energy electron diffraction), GDS (glow discharge spectrometer), XPS (X-ray photoelectron spectroscopy), SEM (scanning electron microscope) and TEM (tunneling electro microscope). Moreover, the electrical properties of the grown 3C-SiC thin film were evaluated by Hall effect. From these results, the grown 3C-SiC thin film is very good crystalline quality, surface like mirror and low defect. Therefore, the 3C-SiC thin film is suitable for extreme environment, Bio and RF M/NEMS applications in conjunction with Si fabrication technology.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2002년도 하계학술대회 논문집 C
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• pp.1593-1595
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• 2002

Single crystal 3C-SiC(cubic silicon carbide) thin-films were deposited on Si(100) wafers up to a thickness of 4.3 ${\mu}m$ by APCVD method using HMDS(hexamethyildisilane) at $1350^{\circ}C$. The HMDS flow rate was 0.5 sccm and the carrier gas flow rate was 2.5 slm. The HMDS flow rate was important to get a mirror-like crystal surface. The growth rate of the 3C-SiC films was 4.3 ${\mu}m/hr$. The 3C-SiC epitaxial films grown on Si(100) were characterized by XRD, AFM, RHEED, XPS and raman scattering, respectively. The 3C-SiC distinct phonons of TO(transverse optical) near 796 $cm^{-1}$ and LO(longitudinal optical) near $974{\pm}1cm^{-1}$ were recorded by raman scattering measurement. The hetero-epitaxially grown films were identified as the single crystal 3C-SiC phase by XRD spectra($2{\theta}=41.5^{\circ}$).

• 한국전기전자재료학회논문지
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• 제29권6호
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• pp.376-379
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• 2016

In this paper, the efficiency improvement of the heterojunction with intrinsic thin layer (HIT) solar cells is obtained by optimization process of p-type a-SiC:H as emitter. The optoelectronic of p-type a-SiC:H layers including the optical band-gap and conductivity under the methane gas content variation is conducted in detail. A significant increase in the Jsc by $1mA/cm^2$ and Voc by 30 mV are attributed to enhanced photon-absorption due to broader band-gap of p-a-SiC:H and reduced band-offsets at p-side interface, respectively of HIT solar cells.