• Journal of Powder Materials
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• v.24 no.1
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• pp.29-33
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• 2017

Titanium carbide (TiC) powders are successfully synthesized by carburization of titanium hydride ($TiH_2$) powders. The $TiH_2$ powders with size lower than $45{\mu}m$ (-325 Mesh) are optimally produced by the hydrogenation process, and are mixed with graphite powder by ball milling. The mixtures are then heat-treated in an Ar atmosphere at $800-1200^{\circ}C$ for carburization to occur. It has been experimentally and thermodynamically determined that the de-hydrogenation, "$TiH_2=Ti+H_2$", and carburization, "Ti + C = TiC", occur simultaneously over the reaction temperature range. The unreacted graphite content (free carbon) in each product is precisely measured by acid dissolution and by the filtering method, and it is possible to conclude that the maximal carbon stoichiometry of $TiC_{0.94}$ is accomplished at $1200^{\circ}C$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.131-131
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• 2009

Silicon Carbide (SiC) is a material with a wide bandgap (3.26eV), a high critical electric field (~2.3MV/cm), a and a high bulk electron mobility ($\sim900cm^2/Vs$). These electronic properties allow high breakdown voltage, high-speed switching capability, and high temperature operation compared to Si devices. Although various SiC DMOSFET structures have been reported so far for optimizing performances, the effect of channel dimension on the switching performance of SiC DMOSFETs has not been extensively examined. This paper studies different channel dimensons ($L_{CH}$ : $0.5{\mu}m$, $1\;{\mu}m$, $1.5\;{\mu}m$) and their effect on the the device transient characteristics. The key design parameters for SiC DMOSFETs have been optimized and a physics-based two-dimensional (2-D) mixed device and circuit simulator by Silvaco Inc. has been used to understand the relationship. with the switching characteristics. To investigate transient characteristic of the device, mixed-mode simulation has been performed, where the solution of the basic transport equations for the 2-D device structures is directly embedded into the solution procedure for the circuit equations. We observe an increase in the turn-on and turn-off time with increasing the channel length. The switching time in 4H-SiC DMOSFETs have been found to be seriously affected by the various intrinsic parasitic components, such as gate-source capacitance and channel resistance. The intrinsic parasitic components relate to the delay time required for the carrier transit from source to drain. Therefore, improvement of switching speed in 4H-SiC DMOSFETs is essential to reduce the gate-source capacitance and channel resistance.

• Electrical & Electronic Materials
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• v.14 no.12
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• pp.11-14
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• 2001

반도체 동작시에 파워 손실을 최소화하는 것은 2000년대의 에너지, 산업전자, 정보통신 산업분야에서의 가장 주요한 요구 사항중의 하나이다. 실리콘계 반도체 소자들은 완전히 새로운 구동기구의 소자가 개발되지 않는 한, 실리콘 재료의 낮은 열전도율이나 낮은 절연파괴전계와 같은 물리적 특성한계 때문에 이러한 요구를 만족시키는 것이 불가능한 실정이다. 따라서 21세기를 위한 대안으로 고열전도율의 WBG(Wide Band-Gap) 물질 그 중에서도 탄화규소(SiC) 반도체가 제시되고 있다. SiC 반도체는 실리콘에 비하여 밴드 갭(band gap: E$_{g}$)이 높을 뿐만이 아니라 절연파괴강도(E$_{B}$)가 한 자릿수 이상 그리고 전자의 포화 drift 속도, V$_{s}$ 및 열전도도 k가 3배 가량 크다. 따라서 SiC는 고온 동작 내지는 고내압, 대전류, 저손실 반도체를 제작하는데 아주 유리하다. 본고에서는 응용성이 넓고, 단결정 제조가 비교적 용이한 SiC 반도체의 기술현황에 대하여 살펴보고자 한다.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.13 no.4
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• pp.176-181
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• 2003

Rapid densification of a SiC powder with additive 0.5 wt% $B_4$C was conducted by spark plasma sintering (SPS). The unique features of the process are the possibilities of using very fast heating rate and short holding time to obtain fully dense materials. The heating rate and applied pressure were kept to be $100^{\circ}C$/min and 40 MPa, while sintering temperature and soaking time varied to 1800, 1850, 1900 and $1950^{\circ}C$ and 10, 20 and 30 min, respectively. All of the SPS-sintered specimens at $1950^{\circ}C$ reached near-theoretical density. The XRD found that 3C-to-6H transformation at $1850^{\circ}C$. The microstructures of the rapidly densified SiC ceramics consisted of duplex microstructure with ultrafine equiaxed grains under 2 $\mu\textrm{m}$ and elongated grains of 0.5∼2 $\mu\textrm{m}$ wide, length 3∼10 $\mu\textrm{m}$. The biaxial strength increased with the increase of sintering time. Strength of 392.7 MPa was obtained with the fully densified specimen sintered at $1950^{\circ}C$ for 30 min, in agreement with the general tendency that strength increases with decreases pore. On the other hand, the fracture toughness shows the value of 2.17∼2.34 MPa$.$$m^{1/2}$ which might be due to the transgranular fracture mode.

• The Korean Journal of Ceramics
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• v.2 no.1
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• pp.39-42
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• 1996

${\alpha}-SiC$ powder with or without the addition of 0.1 wt% of large ${\alpha}-SiC$ partices(seeds) was pressureless-sintered at $1950^{\circ}C$ for 0.5, 2, and 4 h using $Y_3Al_5 O_{12}$ (yttrium aluminum garnet, YAG) as a sintering aid. The materials without seeds had an equiaxed grain struture. In contrast, the materials with seeds sintered for 2 and 4 h had a duplex microstructure with large elongated grains and amall equiaxed grains. Addition of large ${\alpha}-SiC$ seeds into ${\alpha}-SiC$ accelerated the grain growth of some ${\alpha}-SiC$ grains during sintering and resulted in the increased fracture toughness of the sintered materials. The fracture toughnesses of materials with or without seeds sintered for 4 h were 6.6 and $5.2 MPa \;m^{12}$, respectively.

• Corrosion Science and Technology
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• v.2 no.3
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• pp.117-126
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• 2003

Due to excellent corrosion resistance and mechanical properties, austenitic stainless steel is widely used as the material for chemical plants. nuclear power plants, and food processing facilities. But, the zone affected by heat in the range of 400 to $800^{\circ}C$ during welding loses corrosion resistance and tensile strength since Cr-carbide precipitation like $Cr_{23}C_6$ forms at the grain boundary and thereby takes place the intergranular corrosion. In this study, AISI 304 stainless steel with the added Nb of 0.3 to 0.7 wt% was solutionized at $1050^{\circ}C$ and sensitized at $650^{\circ}C$. Specimen was welded by MIG. The phase and the microstructure of the specimens were examined by an optical microscope, a scanning electron microscope, and a x-ray diffractometer. The corrosion characteristics of specimens were tested by electrolytic etching and by double loop electrochemical potentiokinetic reactivation method(EPR) in the mixed solution of 0.5M $H_2SO_4$ + 0.01M KSCN. The melting zone had dendritic structure constituted of austenitic phase and $\delta$-ferrite phase. Cr carbide at the matrix did not appear, as Nb content increased. At the grain boundaries of the heat affected zone, the precipitates decreased and the twins appeared. The hardness increased, as Nb content increased. The hardness was highest in the order of the heat affected zone>melted zone>matrix. According to EPR curve, as the Nb content decreased, the reactivation current density(Ir) and the activation current density(la) were highest in the order of the melted zone

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2001.11a
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• pp.29-30
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• 2001

This paper presents some results of plasma nitriding on hard chromium deposit. The substrates were C45 steel and $30~50{\;}\mu\textrm{m}$ of chromium deposit by electroplating was formed. Plasma nitriding was carried out in a plasma nitriding system with $95NH_3{\;}+{\;}SCH_4$ atmosphere at the pressure about 600 Pa and different temperature from $450^{\circ}C{\;}to{\;}720^{\circ}C$ for various time. Optical microscopy and X-ray diffraction were used to evaluate the characteristics of surface nitride layer formed by nitrogen diffusion from plasma atmosphere inward iCr coating and interface carbide layer formed by carbon diffusion from substrate outward Cr coating. The microhardness was measured using microhareness tester at the load of 100 gf. Corrosion resistance was evaluated using the potentiodynamic measurement in 3.5% NaG solution. A saturated calomel electrode (SiCE) was used as the reference electrode. Fig.1 shows the typical microstructures of top surface and cross-section for nitrided and unnitrided samples. Aaer plasma nitriding a sandwich structure was formed consisting of surface nitride layer, center chromium layer and interface carbide layer. The thickness of nitride and carbide layers was increased with the increase of processing temperature and time. Hardness reached about 1000Hv after nitriding while 900Hv for unnitrided hard chromium deposit. X-ray diffraction indicated that surface nitrided layer was a mixture of $Cr_2N$ and CrN at low temperature and erN at high temperature (Fig.2). Anodic polarization curves showed that plasma nitriding can greatly improve the corrosion resistance of chromium e1ectrodeposit. After plasma nitriding, the corrosion potential moved to noble direction and passive current density was lower by 1 to 4 orders of magnitude compared with chromium deposit(Fig.3).

• Journal of Powder Materials
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• v.16 no.1
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• pp.43-49
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• 2009

Titanium carbides are widely used for cutting tools and grinding wheels, because of their superior physical properties such as high melting temperature, high hardness, high wear resistance, good thermal conductivity and excellent thermal shock resistance. The common synthesizing method for the titanium carbide powders is carbo-thermal reduction from the mixtures of titanium oxide($TiO_2$) and carbon black. The purpose of the present research is to fabricate nano TiC powders using titanium salt and titanium hydride by the mechanochemical process(MCP). The initial elements used in this experiment are liquid $TiCl_4$(99.9%), $TiH_2$(99.9%) and active carbon(<$32{\mu}m$, 99.9%). Mg powders were added to the $TiCl_4$ solution in order to induce the reaction with Cl-. The weight ratios of the carbon and Mg powders were theoretically calculated. The TiC and $MgCl_2$ powders were milled in the planetary milling jar for 10 hours. The 40 nm TiC powders were fabricated by wet milling for 4 hours from the $TiCl_4$+C+Mg solution, and 300 nm TiC particles were obtained by using titanium hydride.

• Journal of the Korean Ceramic Society
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• v.45 no.9
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• pp.531-536
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• 2008

Reaction bonded silicon carbide (RBSC) composite for heat-exchanger was fabricated by molten Si infiltration method. For enforcing fracture toughness to reaction bonded silicon carbide composite, the surface of carbon fiber has coating layer by SiC or pyro-carbon. For SiC layer coating, CVD method was used. And for carbon layer coating, the phenol resin was used. In the case of carbon layer coating, fracture toughness and fracture strength were enhancing to 4.4 $MPa{\cdot}m^{1/2}$ and 279 MPa.

• Journal of the Korean Ceramic Society
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• v.45 no.8
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• pp.486-492
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• 2008

Reaction bonded silicon carbide(RBSC) composite for heat-exchanger was fabricated by molten Si infiltration method. The raw materials with variable particle sizes were used in this experience. The finer the particle size in sintered silicon carbide was the more increasing 3-point bending strength and fracture toughness. As the adaptable particle sizes had been occupied interstice arising from packing sample, the mechanical properties were increased. In the PCS1-1 sample, the 3-point bending strength and fracture toughness were 323MPa and $4.9\;MPa{\cdot}m^{1/2}$, respectively.