• Journal of the Korean Ceramic Society
• /
• v.26 no.2
• /
• pp.228-234
• /
• 1989

Pressureless-sintering of SiC with additions of yttria and alumina was studied. SiC could be densified to about 97% of its theoretical density at 185$0^{\circ}C$ which is about 20$0^{\circ}C$ below the normal sintering temperature of SiC with boron and carbon. Yttria and alumina formed intergranular liquid phases at the sintering temperature and promoted densification by the liquid phase sintering mechanism. The microstructure of sintered specimens was equiaxed and the liquid phase appeared to wet and dissolve SiC grains. The fracture toughness was measured by indentation method and found to be 5.3MPa.m1/2. Processing flaws near the surface of specimens appeared to be the major fracture origin during 3-point bending tests.

• Particle and aerosol research
• /
• v.8 no.4
• /
• pp.173-180
• /
• 2012

SiC particles, 8.3 ${\mu}m$ in volume average diameter, were chlorinated in an alumina tubular reactor, 2.4 cm in diameter and 32 cm in length, with reactor temperature varied from 100 to $1200^{\circ}C$. The flow rate of the gas admitted to the reactor was held constant at 300 cc/min, the mole fraction of chlorine in the gas at 0.1 and the reaction time at 4 h. The chlorination was negligibly small up to the temperature of $500^{\circ}C$. Thereafter, the degree of chlorination increased remarkably with increasing temperature until $900^{\circ}C$. As the temperature was increased further from 900 to $1200^{\circ}C$, the increments in chlorination degree were rather small. At $1200^{\circ}C$, the chlorination has nearly been completed. The surface area of the residual carbon varied with chlorination temperature in a manner similar to that with the variation of chlorination degree with temperature. The surface area at $1200^{\circ}C$ was 912 $m^{2}/g$. A simple model was developed to predict the conversion of a SiC under various conditions. A Langmuir-Hinshelwood type rate law with two rate constants was employed in the model. Assuming that the two rate constants, $k_{1}$ and $k_{2}$, can be expressed as $A_{1e}^{-E_{1}/RT}$ and $A_{2e}^{-E_{2}/RT}$, the four parameters, $A_{1}$, $E_{1}$, $A_{2}$, and $E_{2}$ were determined to be 32.0 m/min, 103,071 J/mol, 2.24 $m^{3}/mol$ and 39,526 J/mol, respectively, through regression to best fit experimental data.

• Proceedings of the Korean Powder Metallurgy Institute Conference
• /
• 2001.04a
• /
• pp.14-14
• /
• 2001

WC-Co 계의 입성장 억제는 현재 초경합금 분야에서 공학적으로 가장 중요한 이슈들 중의 하나이다 VC를 비롯한 입방정 탄화물이나 $Cr_3C_2$ 등의 여러 가지 탄화 물이 혼합되어 입성장 억제에 이용되는데 입성장 억제의 효과는 대략적으로 용해되는 탄화물의 양에 의존하고 있는 것으로 추정된다. 보다 효율적으로 입성장 억제를 실현하려면 입성장 기구를 명확히 할 필요가 있다. 최 등[1]은 VC가 WC 입자 표면 에서의 edge energy를 증가시켜서 2차원 핵생성의 에너지 장벽을 올리게 하고 이에 따라 입성장이 억제된다는 모델을 제안하였다. 이러한 모텔을 입증하기 위해서는 이론적으로만 예측이 가능한 edge energy보다 좀 더 명확한 물리적인 변수가 제시되어야 할 것이다. 여기서는 또 다른 계인 NbC- TiC-Co 계에서 NbC와 TiC의 버에 따른 입성장 거동과 입자의 형상간의 관계로부터 업성장과 edge energy 그리 고 edge energy와 입자 형상간의 관계를 알아보고 이로부터 좀 더 구체적인 의미 에서의 입성장 모텔과 입성장 억제기구를 제시하고자 한다.

• Proceedings of the Korean Nuclear Society Conference
• /
• 2004.10a
• /
• pp.1047-1048
• /
• 2004

Simulation Coated layers of a nuclear fuel particle were evaluated by field emission scanning electron microscopy and nano-indentation method to give basic data to estimate 'Amoeba effect' and give an optimum fabrication condition and high quality control. Coated layers on the fuel kernel are in the order of buffer pyrolytic carbon, inner pyrolytic carbon, silicon carbide and outer pyrolytic carbon layers, which average thicknesses are 95, 25, 30 and 28 ${\mu}m$, respectively. Their densities and hardnesses are 1.08, 1.15, 3.18, 1.82 $g/cm^3$ and 0.522, 0.874, 9.641, and 2.726 GPa, respectively. Comparing theoretical density of pyrolytic carbon of 2.22 $g/cm^3$, the relative amount of porosity in each layer is about 52% for buffer, 48% for inner PyC and 18% for outer PyC.

• Carbon letters
• /
• v.12 no.2
• /
• pp.95-101
• /
• 2011

To investigate new applications for illite as an additive for carbon-based composites, the composites were prepared with and without illite at different heat-treatment temperatures. The effects of the heat-treatment temperature on the chemical structure, microstructure, and thermal oxidation properties of the resulting composites were studied. As the heat-treatment temperature was increased, silicon carbide SiC formation via carbothermal reduction increased until all the added illite was consumed in the case of the samples heat-treated at $2,300^{\circ}C$. This is attributed to the intimate contact between the $SiO_2$ in the illite and the phenol carbon precursor or the carbon fibers of the preform. Among composites prepared at all temperatures, those with illite addition exhibited fewer pores, voids, and interfacial cracks, resulting in larger bulk densities and lower porosities. A delay of oxidation was not observed in the illite-containing composites prepared at $2,300^{\circ}C$, suggesting that the illite itself absorbed energy for exfoliation or other physical changes. Therefore, if the illite-containing C/C composites can reach a density generally comparable to that of other C/C composites, illite may find application as a filler for C/C composites. However, in this study, the illite-containing C/C composites exhibited low density, even when prepared at a high heat-treatment temperature of $2300^{\circ}C$, although the thermal oxidation of the resulting composites was improved.

• Korean Journal of Materials Research
• /
• v.15 no.9
• /
• pp.566-576
• /
• 2005

This paper describes an ab Initio study on interface energies, misfit strain energies, and electron structures at coherent interfaces Fe(bcc structure)/MCs(NaCl structure M=Ti, Zr, Hf). The interface energies at relaxed interfaces Fe/TiC, Fe/ZrC and Fe/HfC were 0.263, 0.153 and $0.271 J/m^2$, respectively. It was understood that the dependence of interface energy on the type of carbide was closely related to changes of the binding energies between Fe, M and C atoms before and after formation of the interfaces Fe/MCs with the help of the DLP/NNBB (Discrete Lattice Plane/ Nearest Neighbour Broken Bond) model and data of the electron structures. The misfit strain energies in Fe/TiC, Fe/ZrC and Fe/HfC systems were 0.390, 1.692 and 1.408 eV per 16 atoms(Fe: 8 atoms and MC; 8 atoms). More misfit energy was generated as difference of lattice parameters between the bulk Fe and the bulk MCs increased.

• Journal of the Korean institute of surface engineering
• /
• v.29 no.6
• /
• pp.797-802
• /
• 1996

Hydrogenated amorphous silicon carbide (a-SiC:H) films have been deposited on unheated substrates by low frequency (50Hz) plasma using $SiH_4+CH_4+H_2$ gas mixtures. Deposition rate, refractive index, optical band gap, Vickers hardness and IR spectrum of the deposited a -SiC:H films have been measured for various rations of gas flow rates k(=$CH_4/SiH_4$, 0.5k4) with a constant $H_2$ flow rate (100sccm). As k increases, the deposition rate of the a-SiC:H films increases up to the maximum value of about 220nm/h at k=2.5, and then it decreases. The refractive index of the films was 2.6 for k=2.5, while the optical band gap of the films was 3.3eV for k=2.2. The maximum value of Vickers hardness of the films was 1500Hv at k=1. The infrared transmission measurement shows that the films contain both Si-C and Si-$CH_3$ bonds.

• Journal of the Korean institute of surface engineering
• /
• v.47 no.2
• /
• pp.93-98
• /
• 2014

The $Cr_2AlC$ carbides oxidized at 700, 850 and $1000^{\circ}C$ in air from 70 hours up to 360 days. They oxidized according to the reaction; $Cr_2AlC+O_2{\rightarrow}{\alpha}-Al_2O_3+CO(g)$. The scales consisted primarily of the thin, essentially pure $Al_2O_3$ layer and the underlying Al-dissolved $Cr_7C_3$ layer. They grew via the outward diffusion of Al and carbon, and the inward diffusion of oxygen. The oxidation resistance of $Cr_2AlC$ was excellent due to the formation of the protective $Al_2O_3$ layer. Even when $Cr_2AlC$ oxidized at $1000^{\circ}C$ for 360 days, the ${\alpha}-Al_2O_3$ layer was only about 4 ${\mu}m$-thick.

• Korean Journal of Materials Research
• /
• v.13 no.12
• /
• pp.806-811
• /
• 2003

Ultrafine TaC powders were synthesised by spray drying using tantalum oxalate solution. The spray dried powders were spherical shape and less than 30 $\mu\textrm{m}$ in size. The powders calcined at 500 and X$700^{\circ}C$ showed amorphous structures and $Ta_2$$O_{5}$ phase was obtained by calcining at $700^{\circ}C$. The particle size and shape remains constant after calcination. The calcined spherical powders were composed of an agglomerate of primary particles under 50 nm in size. The complete formation of TaC could be achieved by heat treatment at $1050^{\circ}C$ for 6 hrs. The observed size of TaC powders by TEM was less than 200 nm.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2008.06a
• /
• pp.67-68
• /
• 2008

In this study we have developed a packaged silicon carbide power diode with blocking voltage of 2kV. PiN diodes with 7 field limiting rings (FLRs) as an edge termination were fabricated on a 4H-SiC wafer with $30{\mu}m$-thick n-epilayer with donor concentration of $1.6\times10^{15}cm^{-3}$. From packaged PiN diode testing, we obtained reverse blocking voltage of 2kV, forward voltage drop of 4.35V at 100A/$cm^2$, on-resistance of $6.6m{\Omega}cm^2$, and about 8 nanosec reverse recovery time. These properties give a potential for the power system application.