• Journal of the Korean Crystal Growth and Crystal Technology
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• v.7 no.3
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• pp.473-480
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• 1997

$\beta-SiC$powder with or without the addition of 1-3 wt% of $\beta-SiC$ whiskers (seeds) was hot-pressed at $1850^{\circ}C$ for 1 h using $Al_2O_3$ and $Y_2O_3$ as sintering aids. The hot-pressed materials were subsequently annealed at $1950^{\circ}C$ to enhance grain growth. The introduction of $\beta-SiC$ whiskers into $\beta-SiC$ does not affect the microstructure as well as mechanical properties significantly because the whiskers are not viable in the presence of liquid phase during hot-pressing. The strengths and fracture toughnesses of the hot-pressed and subsequently 5 h-annealed materials with 1 wt% $\beta-SiC$ whiskers and without $\beta-SiC$ whiskers were 465 MPa and 5.8 MPaㆍ$m^{1/2}$, and 451 MPa and 5.5 MPaㆍ$m^{1/2}$, respectively.

• Composites Research
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• v.31 no.2
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• pp.43-50
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• 2018

The effects of deposition temperature on chemical vapor deposited silicon carbide (CVD-SiC) were studied to obtain high deposition rates and excellent bending strength characteristics. Silicon carbide prepared at $1250{\sim}1400^{\circ}C$ using methyltrichlorosilane(MTS : $CH_3SiCl_3$) by hot-wall CVD showed deposition rates of $95.7{\sim}117.2{\mu}m/hr$. The rate-limiting reaction showed the surface reaction at less than $1300^{\circ}C$, and the mass transfer dominant region at higher temperature. The activation energies calculated by Arrhenius plot were 11.26 kcal/mole and 4.47 kcal/mole, respectively. The surface morphology by the deposition temperature changed from $1250^{\circ}C$ pebble to $1300^{\circ}C$ facet structure and multi-facet structure at above $1350^{\circ}C$. The cross sectional microstructures were columnar at below $1300^{\circ}C$ and isometric at above $1350^{\circ}C$. The crystal phases were all identified as ${\beta}$-SiC, but (220) peak was observed from $1300^{\circ}C$ or higher at $1250^{\circ}C$ (111) and completely changed to (220) at $1400^{\circ}C$. The bending strength showed the maximum value at $1350^{\circ}C$ as densification increased at high temperatures and the microstructure changed from columnar to isometric. On the other hand, at $1400^{\circ}C$, the increasing of grain size and the direction of crystal growth were completely changed from (111) to (220), which is the closest packing face, so the bending strength value seems to have decreased.

• Journal of the Korean Society for Precision Engineering
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• v.19 no.2
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• pp.228-236
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• 2002

In this study, the carbon steels, SM20C were machined with the tungsten carbide tipped circular saw to clarify the cutting-off characteristics in terms of tool wear. The results show that an improved performance in view of both the tool wear and the cutting efficiency was obtained by using oil base cutting fluid at the cutting speed of 100m/min with the feed of 0.06mm/tooth. The rake angle of 10$^{\circ}$ , clearance angle of 8$^{\circ}$ , nose radius of R0.1mm, and end cutting edge champer of 0.1mm$\times$25$^{\circ}$ are believed as the best tool geometries. The tool wear decreases due to using the saw of the disk of STS5 and the tool material of P30.

• Korean Journal of Materials Research
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• v.32 no.1
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• pp.44-50
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• 2022

Transition metal carbides (TMCs) are used to process difficult-to-cut materials due to the trend of requiring superior wear and corrosion properties compared to those of cemented carbides used in the cutting industry. In this study, TMC (TiC, TaC, Mo₂C, and NbC)-based cermets were consolidated by spark plasma sintering at 1,300 ℃ (60 ℃min) with a pressure of 60 MPa with Co addition. The sintering behavior of TMCs depended exponentially on the function of the sintering exponent. The Mo₂C-6Co cermet was fully densified, with a relative density of 100.0 %. The Co-binder penetrated the hard phase (carbides) by dissolving and re-precipitating, which completely densified the material. The mechanical properties of the TMCs were determined according to their grain size and elastic modulus: TiC-6Co showed the highest hardness of 1,872.9 MPa, while NbC-6Co showed the highest fracture toughness of 10.6 MPa^*m^1/2. The strengthened grain boundaries due to high interfacial energy could cause a high elastic modules; therefore, TiC-6Co showed a value of 452 ± 12 GPa.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.735-738
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• 2002

Single crystal 3C-SiC(cubic silicon carbide) thin-films were deposited on Si(100) substrate up to a thickness of $4.3{\mu}m$ by APCVD method using HMDS(hexamethyildisilane) at $1350^{\circ}C$. The HMDS flow rate was 0.5 sccm and the carrier gas flow rate was 2.5 slm. The HMDS flow rate was important to get a mirror-like crystal surface. The growth rate of the 3C-SiC films was $4.3{\mu}m/hr$. The 3C-SiC epitaxical films grown on Si(100) were characterized by XRD, AFM, RHEED, XPS and raman scattering, respectively. The 3C-SiC distinct phonons of TO(transverse optical) near $796cm^{-1}$ and LO(longitudinal optical) near $974{\pm}1cm^{-1}$ were recorded by raman scattering measurement. The heteroepitaxially grown films were identified as the single crystal 3C-SiC phase by XRD spectra$(2{\theta}=41.5^{\circ})$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.533-536
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• 2001

Single crystal cubic silicon carbide(3C-SiC) thin film were deposited on Si(100) substrate up to a thickness of $4.3{\mu}m$ by APCVD(atmospheric pressure chemical vapor deposition) method using hexamethyildisilane(HMDS) at $1350^{\circ}C$. The HMDS flow rate was 0.5 sccm and the carrier gas flow rate was 2.5 slm. The HMDS flow rate was important to get a mirror-like. The growth rate of the 3C-SiC films was $4.3{\mu}m/hr$. The 3C-SiC epitaxical layers on Si(100) were characterized by XRD(X-ray diffraction), raman scattering and RHEED(reflection high-energy electron diffraction), respectively. The 3C-SiC distinct phonons of TO(transverse optical) near $796cm^{-1}$ and LO(longitudinal optical) near $974{\pm}1cm^{-1}$ were recorded by raman scattering measurement. The deposition films were identified as the single crystal 3C-SiC phase by XRD spectra($2{\theta}=41.5^{\circ}$). Also, with increase of films thickness, RHEED patterns gradually changed from a spot pattern to a streak pattern.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.533-536
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• 2001

Single crystal cubic silicon carbide(3C-SiC) thin film were deposited on Si(100) substrate up to a thickness of 4.3 $\mu\textrm{m}$ by APCVD(atmospheric pressure chemical vapor deposition) method using hexamethyildisilane(HMDS) at 1350$^{\circ}C$. The HMDS flow rate was 0.5 sccm and the carrier gas flow rate was 2.5 slm. The HMDS flow rate was important to get a mirror-like. The growth rate of the 3C-SiC films was 4.3 $\mu\textrm{m}$/hr. The 3C-SiC epitaxical layers on Si(100) were characterized by XRD(X-ray diffraction), raman scattering and RHEED(reflection high-energy electron diffraction), respectively The 3C-SiC distinct phonons of TO(transverse optical) near 796 cm$\^$-1/ and LO(longitudinal optical) near 974${\pm}$1 cm$\^$-1/ were recorded by raman scattering measurement. The deposition films were identified as the single crystal 3C-SiC phase by XRD spectra(2$\theta$=41.5$^{\circ}$). Also, with increase of films thickness, RHEED patterns gradually changed from a spot pattern to a streak pattern

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.05a
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• pp.30-34
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• 2002

Single crystal 3C-SiC(cubic silicon carbide) thin-films were deposited on Si(100) wafers up to a thickness of 4.3 ${\mu}m$ by APCVD method using HMDS(hexamethyldisilane) at $1350^{\circ}C$. The HMDS flow rate was 0.5 sccm and the carrier gas flow rate was 2.5 slm. The HMDS flow rate was important to get a mirror-like crystal surface. The growth rate of the 3C-SiC films was 4.3 ${\mu}m$/hr. The 3C-SiC epitaxial films grown on Si(100) were characterized by XRD, AFM, RHEED, XPS and raman scattering, respectively. The 3C-SiC distinct phonons of TO(transverse optical) near 796 $cm^{-1}$ and LO(longitudinal optical) near $974{\pm}1cm^{-1}$ were recorded by raman scattering measurement. The heteroepitaxially grown films were identified as the single crystal 3C-SiC phase by XRD spectra($2{\theta}=41.5^{\circ}$).

• Journal of the Korean institute of surface engineering
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• v.30 no.3
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• pp.167-174
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• 1997

WC-C0 base cemented carbides were plasma nitrided to obtain more hadened surface layer. The surface hardness of Hv1338 which is higher than a non-treated ane by 30%, and the hardened layer thickness of about 50$\mu\textrm{m}$ were obtained by the treatment of 3hrs under the conditions of $550^{\circ}C$, and 5torr of gas pressure of which composition was 1:1 of $N_2:H_2$. The nitrided surfaces has WIN and W2N phases in the non-coated samples and AIN phase in the alumina coated sampled as the results of X-ray results, and showed surface roughnness of 5$\mu\textrm{m}$ which were caused by the sputtering action of the plasma gasee. The hardenened layer exihibits an enhanced wear resistance the cuttability test.

• Journal of Powder Materials
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• v.1 no.2
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• pp.190-197
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• 1994

The densification behavior during a sintering of M2 and T15 grade high speed steel powder compacts was reported. Sintered densities over 98% theoretical were achieved by a liquid phase sintering in vacuum for both grades. The optimum sintering temperature range where full densification could be achieved without excessive carbide coarsening and incipient melting was much narrower in M2 than in T15 grade. The sintering response was mainly affected by the type of carbides present. The primary carbides in M2 were identified as $M_6C$ type whereas those in T15 were MC type which provides wider sintering range. The addition of elemental carbon up to 0.3% lowered the optimum sintering temperature for both grades, but had little effect on expanding the sintering range and sintered structure.