• Journal of Powder Materials
• /
• v.24 no.2
• /
• pp.87-95
• /
• 2017

Lithium silicate, a lithium-ion conducting ceramic, is coated on a layer-structured lithium nickel manganese oxide ($LiNi_{0.7}Mn_{0.3}O_2$). Residual lithium compounds ($Li_2CO_3$ and LiOH) on the surface of the cathode material and $SiO_2$ derived from tetraethylorthosilicate are used as lithium and silicon sources, respectively. Powder X-ray diffraction and scanning electron microscopy with energy-dispersive spectroscopy analyses show that lithium silicate is coated uniformly on the cathode particles. Charge and discharge tests of the samples show that the coating can enhance the rate capability and cycle life performance. The improvements are attributed to the reduced interfacial resistance originating from suppression of solid-electrolyte interface (SEI) formation and dissolution of Ni and Mn due to the coating. An X-ray photoelectron spectroscopy study of the cycled electrodes shows that nickel oxide and manganese oxide particles are formed on the surface of the electrode and that greater decomposition of the electrolyte occurs for the bare sample, which confirms the assumption that SEI formation and Ni and Mn dissolution can be reduced using the coating process.

• Journal of the Korean Ceramic Society
• /
• v.31 no.7
• /
• pp.784-794
• /
• 1994

Though spodumene have a law theraml expension and good thermal shock resistance, its sintering temperature is too close to its melting point in the application for industral purpose. Solving the problems, impurities within the silicate minerals act as a frit during firing, so its densification is expected through enlargement of sintering temperature range. By the heat treatment of starting materials, mixtures of silicate mineral, lithium carbonate, if necessary SiO2 or Al2O3 were added for stoichiometric correction, in the range of 1000~125$0^{\circ}C$ for 10 hrs, $\beta$-spodumene single phase was synthesized. Mixtures with sillimanite group minerals, $\beta$-spodumene was formed at 120$0^{\circ}C$ or 125$0^{\circ}C$ via intermediate phases of petalite, Li2SiO3 and LiAlO2. For the case of kaolin group minerals, synthesis were completed at 110$0^{\circ}C$ for Hadon pink kaolin, 120$0^{\circ}C$ for New Zealand white kaolin, When pyrophyllite group minerals were used, those were at the range of 1000~125$0^{\circ}C$. Spodumene was completed at lowest temperature, 100$0^{\circ}C$ from the mixture of Wando pyrophyllite among them. Microstructure of synthesized powders showed the inrregular lump shape such as densed crystallines.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2000.07a
• /
• pp.920-923
• /
• 2000

All solid-state thin film supercapacitor(TFSC) based on $RuO_2$ electrode was fabricated. Ruthenium oxide$(RuO_2)$ thin film was deposited on Pt/Ti/Si subsrate by d.c. magnetron sputtering. LiPON(lithium phosphorus oxynitride) thin film were deposited by r.f. reactive sputtering. X-ray diffraction patterns of $RuO_2$ and LiPON films revealed that crystal structures of both films were amorphous. To decrease resistivity of $RuO_2$ thin film, $RuO_2$ thin film was deposited with $H_2O$ vapor. In order to decide the maximum ionic conductivity, the LiPON films were prepared by various sputtering condition. The maximum ionic conductivity was $9.5\times{10}^7S/cm$. A charge-discharge measurements showed the capacity of $3\times{10-2}\;F/cm^2-\mu{m}$ for the as-fabricated TFSC. The discharging efficiency was decreased after 500 cycles by 40 %.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.13 no.6
• /
• pp.581-588
• /
• 2013

This paper presents a study of the process temperature dependence of $Al_2O_3$ film grown by thermal atomic layer deposition (ALD) as a passivation layer in the crystalline Si (c-Si) solar cells. The deposition rate of $Al_2O_3$ film maintained almost the same until $250^{\circ}C$, but decreased from $300^{\circ}C$. $Al_2O_3$ film deposited at $250^{\circ}C$ was found to have the highest negative fixed oxide charge density ($Q_f$) due to its O-rich condition and low hydroxyl group (-OH) density. After post-metallization annealing (PMA), $Al_2O_3$ film deposited at $250^{\circ}C$ had the lowest slow and fast interface trap density. Actually, $Al_2O_3$ film deposited at $250^{\circ}C$ showed the best passivation effects, that is, the highest excess carrier lifetime (${\tau}_{PCD}$) and lowest surface recombination velocity ($S_{eff}$) than other conditions. Therefore, $Al_2O_3$ film deposited at $250^{\circ}C$ exhibited excellent chemical and field-effect passivation properties for p-type c-Si solar cells.

• Journal of the Korean Chemical Society
• /
• v.13 no.1
• /
• pp.49-55
• /
• 1969

X-ray Fluorescence Spectrographic method has been applied for the rapid determination of main components, such as $SiO_2$, $Al_2O_3$, $Fe_2O_3$, CaO, MgO and $K_2O$ in Silicate Minerals. In this method, Boric Acid was used as a binder after fusion with Lithium Tetraborate in the briquet-making process. The Lithium Flubride, Ammonium di-Hydrogen Phosphate and Ethylene Diamine d-Tartrate crystals were used with Scintillation counter and Gas Flow counter as the detectors. Several influences on this method were discussed, including the particle size of samples and reducing of the matrix effects by dilution with Boric Acid and addition of Lanthanum Oxide with the diluent. In order to test the reproducibility of this method described above, the determination of the same kind of samples were carried out repeatedly, and the results obtained were presented in the table. Calibration curves for each element were presented, and the application of the method was tested with International Rock Standard T-Ⅰ. All the results obtained by X-Ray Fluorescence Spectrographic method were compared with the results by conventional chemical method.

• Carbon letters
• /
• v.6 no.2
• /
• pp.71-78
• /
• 2005

Anti-oxidation coatings are the key technique for carbon/carbon (C/C) composites used as the thermal structural materials. The microstructure and oxidation behavior of several kinds of high-performance ceramic coatings for C/C composites prepared in Northwestern Polytechnical University were introduced in this paper. It showed that the ceramic coatings such as SiC, Si-$MoSi_2$, SiC-$MoSi_2$, $Al_2O_3$-mullite-SiC and SiC/yttrium silicate/glass coatings possessed excellent oxidation resistance at high temperatures, and some of these coatings were characterized with excellent thermal shock resistance. The SiC-$MoSi_2$ coating system has the best oxidation protective property, which can effectively protect C/C composites from oxidation up to 1973 K. In addition, the protection and failure reasons of some coatings at high temperature were also provided.

• Journal of the Korean Institute of Telematics and Electronics D
• /
• v.36D no.6
• /
• pp.61-70
• /
• 1999

An optical switch composed of three-identical, equally-spaced $Ti:LinbO_3$ waveguides and overlaid Al electrodes of CPW structure was designed and fabricated. Patterned Ti was diffused into z-cut $LinbO_3$ substrates at $1025^{\circ}C$ for 6 hours to make a three-waveguide directional coupler. $SiO_2$ buffer layer of $1.2{\mu}m$ was grown by the PECVD to reduce the propagation loss of TM mode, and Al electrodes were built on the layer for switching the guided beam. For an incident beam of ${\lambda}=1.3{\mu}m$, almost perfect optical coupling between two outer waveguides was observed. When an electric field was applied to detune the three waveguides anti-symmetrically, the optical switching phenomenon was successfully confirmed.

• Proceedings of the Korea Association of Crystal Growth Conference
• /
• 1999.06a
• /
• pp.253-269
• /
• 1999

The development of telecommunication and information technology requires to develop new piezoelectric materials with small size, low impedance, wide pass band width and high thermal stability of frequency. Langasite (La3Ga5SiO14) single crystal has been researched substitute of quartz and LiNbO3 for the applications of SAW filter, BAW filter and resonator. Its single crystal growth has been carried out by Czochralski Method. So, in order to get single crystal with higher quality, in this study, lnagasite (La3Ga5SiO14) single crystal was grown by using Floating Zone (FZ) method and characterized. For the growth of langasite single crystals, the langasite powder was synthesized at 135$0^{\circ}C$ for 5hrs and the feed rod was sintered at 135$0^{\circ}C$ for 5hrs. The growing rate was 1.5mm/h and the rotation speed was 15 rpm for an upper rotation and 13 rpm for a lower rotation. In order to prevent the evaporation of gallium oxide, Ar and O2 gas mixture was flowed. The growth direction was analyzed by Laue back-scattered analysis. The composition of grown crystal was analyzed suing XRD and WDS. The electrical properties of grown crystal at various frequencies and temperature were discussed.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.08a
• /
• pp.193-193
• /
• 2013

실리콘 박막 태양전지는 광 흡수층에서 형성된 정공과 전자를 효과적으로 분리하기 위해 p형과 n형으로 도핑된 층을 형성하는 p-i-n구조를 갖게 된다. 이러한 도핑 층을 형성하기 위해 B2H6와 PH3와 같은 독성 가스를 사용하기 때문에, 공정 안정성과 환경적인 이슈가 대두된다. 또한 도핑은 추가적으로 실리콘 박막 태양전지의 안정화 효율을 지속적으로 저하시키는 요인이 된다. 이러한 문제점을 개선하기 위하여, 창층으로 MoO3, V2O5, WO3 등과 같이 높은 일함수를 갖는 전이금속 산화물을 사용하고, 광 흡수층으로 i-Si:H을, 후면 전극으로 낮은 일함수를 나타내는 LiF/Al을 사용하였다. 전이금속 산화물과 LiF/Al의 큰 일함수 차이에 의해서 흡수층인 i-Si:H 에서 생성된 캐리어들은 효과적으로 분리되고 수집이 된다. 금속 산화물은 스퍼터링 공정에 의하여 이루어졌으며, 스퍼터링 공정조건에 따라 산화도가 조절되며, 이러한 산화도에 따라 태양전지의 셀 특성이 결정된다. 도핑 층이 없는 새로운 형태의 실리콘 박막 태양전지는 기존 비정질 실리콘 박막 태양전지에 비해 높은 안정화 효율을 나타내며, 이는 도핑 층이 없기 때문에 기존 실리콘 박막 태양전지의 열화현상에 따른 효율저하가 발생하지 않는 장점을 지내고 있다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2005.11a
• /
• pp.11-12
• /
• 2005

[ $Pb(Zr_{0.48}Ti_{0.52})O_3$ ] (PZT) thin films were deposited on Pt(111)/Ti/$SiO_2$/Si substrates by pulsed laser deposition. In order to study the effect of different laser pulse repetition rate on the dielectric and ferroelectric properties of PZT thin films,2 Hz and 5 Hz of laser pulse repetition rate were selected. We compared the results of XRD pattern, dielectric constant and hysteresis characteristics. From the experimental data, we found that the electrical properties of PZT thin films which grown ar 2 Hz of laser pulse repetition rate were better than those which grown at 5 Hz of laser pulse repetition rate.