• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집
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• pp.550-553
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• 2001

Li$_2$O-P$_2$O$_{5}$-Bi$_2$O$_3$-V$_2$O$_{5}$ glass containing glass former, P$_2$O$_{5}$ and Bi$_2$O$_3$ was prepard by melting the glass batch in pt. erucible followed by quenching on the copper plate. We found that Li$_2$O-P$_2$O$_{5}$-Bi$_2$O$_3$-V$_2$O$_{5}$ g1ass-ceramics obtained from the crystallization of glass showed significantly higher capacity and longer cycle life tham LiV$_3$O$_{8}$ made from powder synthesis. In this paper, we described crystallization process and LiV$_3$O$_{8}$ crystal growth in glass matrix by increasing temperature. The electrochemical properties were strongly affected by LiV$_3$O$_{8}$ crystal growth in matrix.rowth in matrix.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 영호남학술대회 논문집
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• pp.311-315
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• 2000

Vanadate glass in the $LiO_2-P_2O_5-Bi_2O_3-V_2O_5$ system containing 10mol% glass fonner, $P_2O_5$ and $Bi_2O_3$ was prepared by melting the batch in pt. crucible followed by Quenching on the copper plate. We found that $LiO_2-P_2O_5-Bi_2O_3-V_2O_5$ glass-ceramics obtained from nucleation of glass showed signifieantly higher capacity and longer cycle life than conventionally made crystalline $LiV_3O_{8}$. In the present paper, we describe the charge / discharge properties during crystallization process and find the best crystallization condition of $LiO_2-P_2O_5-Bi_2O_3-V_2O_5$ glass as cathod material.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.523-527
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• 2000

Vanadate glasses in the Li$_2$O-P$_2$O$_{5}$-V$_2$O$_{5}$ system containing 10mo1% glass former, P$_2$O$_{5}$ were prepared by melting the batch in pt. crucib1e followed by quenching on the copper plate. We found that Li$_2$O-P$_2$O$_{5}$-V$_2$O$_{5}$ glass-ceramics obtained from nucleation of glass showed significantly higher capacity and longer cycle life than conventionally made crystalline LiCoO$_2$, LiNiO$_2$and LiV$_3$O$_{8}$. In the present paper, We describe electro-chemical properties during crystallization process and find the best crystallization condition of Li$_2$O-P$_2$O$_{5}$-V$_2$O$_{5}$ g1ass as cathod material. Li$_2$O-P$_2$O$_{5}$-V$_2$O$_{5}$ glass-ceramics shows superior rechargeable capacity of 220 mAh/g in the cycling between 2.0 and 3.9V.etween 2.0 and 3.9V.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.19-20
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• 2007

At first the $Ba_{0.5}Sr_{0.5}TiO_3$-MgO powder with $B_2O_3-Li_2CO_3$ were made by the Sol-Gel method. The thick films of BST-MgO with $B_2O_3-Li_2CO_3$ were fabricated on the $Al_2O_3$ substrates coated with Pt by the screen printing method. The structural and dielectric properties of the BST-MgO thick film with $B_2O_3-Li_2CO_3$, addition were investigated. The structure of the BST-MgO with $B_2O_3-Li_2CO_3$ thick films were dense and homogeneous with no pores. The dielectric constant was increased and dielectric loss was decreased with increasing the sintering temperature.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2007년도 제38회 하계학술대회
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• pp.1261-1262
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• 2007

At first the $Ba_{0.5}Sr_{0.5}TiO_{3}$-MgO powder with $B_{2}O_{3}-Li_{2}CO_{3}$ were made by the Sol-Gel method. And then the thick films of BST-MgO with $B_{2}O_{3}-Li_{2}CO_{3}$ were fabricated on the $Al_{2}O_{3}$ substrates coated with Pt by the screen printing method. The structural and dielectric properties of the BST-MgO thick film with $B_{2}O_{3}-Li_{2}CO_{3}$ addition were investigated. The structure of the BST-MgO with $B_{2}O_{3}-Li_{2}CO_{3}$ thick films were dense and homogeneous with no pores. The dielectric constant and dielectric loss were increased with decreasing the $B_{2}O_{3}-Li_{2}CO_{3}$ addition ratio.

• 한국세라믹학회지
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• 제31권2호
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• pp.147-154
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• 1994

The imperfections of LiTaO3 crystals grown from the Pt-Rh and the Ir crucible were investigated with X-ray diffraction, optical and electron microscope. The growth direction was <100>h and the plane parallel to the plane connecting two main growth ridges was (012)h which would be the main cleavage plane. The dislocation density in the specimen cut parallel to (012)h plane increased with polishing time and the inverted ferroelectric microdomains were induced based on this dislocations. Such imperfections as 180$^{\circ}$ domains, microcracks, dislocations and stacking faults. could be found in the LiTaO3 crytals. The crystal contaminated with lots of Rh form Pt-Rh crucible during the crystal growing under air atmosphere contained more imperfections. The main cleavage plane and subgrain boundary parallel to its growing axis might be the main source of reducing the mechnical strength during the wafering process.

• 한국진공학회지
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• 제20권3호
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• pp.205-210
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• 2011

졸-겔(sol-gel) 방법을 이용하여 스피넬(spinel) 구조의 산화물 $LiMn_2O_4$ 박막을 Pt/Ti/$SiO_2$/Si 기판 위에 제작하여 그 구조적 성질 및 이차 전지 전기화학적 특성을 조사하였다. 박막에서의 Li/Mn 몰비(molar ratio)가 0.5 미만일 경우 박막에 $LiMn_2O_4$ 상뿐만 아니라 $Mn_2O_3$ 상이 존재함이 관측되었다. $LiMn_2O_4$ 박막을 이용한 반전극(half cell) 전지를 제작하여 충전-방전 순환과정을 반복수행 하였고, 과정 시작 전후에 X-ray diffraction 및 Raman spectroscopy 측정을 통하여 과정 중 발생하는 박막의 구조적 성질 변화를 조사하였다. 순수한 $LiMn_2O_4$ 박막 전지의 경우 충전-방전 횟수가 증가함에 따라 방전 용량은 서서히 감소하여 300회에 이르러서는 초기 용량의 72%로 줄어들었다. 이와 같은 결과는 충전-방전 과정 중 스피넬 구조의 사면체 자리로부터 탈리되었다가 다시 삽입되는 $Li^+$ 이온 수의 감소 및 이에 따르는 $Mn^{4+}$ 이온 수 증가와 관련이 있는 것으로 해석된다. 또한, 순환 횟수가 증가함에 따라 박막 내에 $Mn_2O_3$ 상의 밀도가 점차 증가함이 관측되었다.

• 한국진공학회지
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• 제11권4호
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• pp.230-234
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• 2002

고온 급속 열처리를 행한 $LiNbO_3Si$/(100) 구조를 가지고 여러 가지 전극을 사용하여 금속/강유전체/반도체 커패시터를 제작하였으며, 제작한 커패시터의 비휘발성 메모리 응용 가능성을 확인하였다. MFS 커패시터의 C-V 특성 곡선에서는 LiNbO$_3$박막의 강유전성으로 인한 히스테리시스 특성이 관측되었으며, 1 MHz C-V 특성 곡선의 축적 영역에서 산출한 비유전율은 약 25 이었다. Pt 전극을 사용하여 제작한 커패시터에서는 인가 전계 500 kV/cm 범위에서 $1\times10^{-8}$ A/cm 이하의 우수한 누설전류 특성이 나타났다. midgap 부근에서의 계면 준위 밀도는 약 $10^{11}\textrm{cm}^2$.eV 이었으며, 잔류분극 값은 약 1.2 $\muC/\textrm{cm}^2$ 였다. Pt 전극과 A1 전극 모두 500 kHz 주파수의 바이폴러 펄스를 인가하면서 측정한 피로 특성에서 $10^{10}$ cycle 까지 측정된 잔류 분극 값이 초기 값과 같았다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.58-61
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• 2001

Metal-insulator-semiconductor (MIS) C-V properties with high dielectric AIN thin films showed no hysteresis and good interface properties. The dielectric constant of the AIN film calculated from the capacitance at the accumulation region in the capacitance-voltage(C-V) characteristics was about 8. The C-V characteristics of MFIS capacitor showed a hysteresis loop due to the ferroelectric nature of the LiNbO$_3$ thin films. Typical dielectric constant value of LiNbO$_3$ film of MFIS device was about 23. The memory window width was about 1.2V at the gate voltage of $\pm$5 V ranges. Typical gate leakage current density of the MFIS structure was the order of 10$^{-9}$ A/cm$^2$ at the range of within $\pm$500 kV/cm. The ferroelectric capacitors showed no polarization degradation up to about 10$^{11}$ switching cycles when subjected to symmetric bipolar voltage pulse(peak-to-peak 8V, 50% duty cycle) in the 500kHz.

• 한국진공학회지
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• 제11권2호
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• pp.103-107
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• 2002

Metal/ferroelectric/semiconductor field effect transistors(MFSFET′s) with various gate electrodes, that are aluminum, platinum and poly-Si, using rapid thermal annealed $LiNbO_3$/Si(100) structures were fabricated and the properties of the FET′s have been discussed. The drain current of the "on" state of FET with Pt electrode was more than 3 orders of magnitude larger than the "off" state current at the same "read" gate voltage of 1.5 V, which means the memory operation of the MFSFET. A write voltage as low as about $\pm$4 V, which is applicable to low power integrated circuits, was used for polarization reversal. The retention properties of the FET using Al electrode were quite good up to about $10^3$ s and using Pt electrode remained almost the same value of its initial value over 2 days at room temperature.