• Journal of the Korean Crystal Growth and Crystal Technology
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• v.12 no.1
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• pp.27-30
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• 2002

ZnO co-doped Er:$LiNbO_3$ single crystal thin films have been grown on $LiNbO_3$ (001) substrate by liquid phase epitaxy (LPE) method. The melts of ZnO co-doped Er:$LiNbO_3$ was fixed $Er_2O_3$, concentration (1 mol%) and different ZnO concentrations 3 and 5 mol%. The crystallinity of ZnO co-doped Er :$LiNbO_3$ films became better than the $LiNbO_3$ substrate. At ZnO 5 mol% concentration, the surface of ZnO co-doped Er:$LiNbO_3$ film is affected by compressive stress along both the perpendicular and the parallel direction. Also the surface of ZnO 3 mol% co-doped Er:$LiNbO_3$film is smoother than the original $LiNbO_3$ substrate surface.

• Journal of the Microelectronics and Packaging Society
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• v.30 no.4
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• pp.79-85
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• 2023

A novel low-temperature co-fired ceramic (LTCC) dielectric, composed of (1-4x)Bi_1.5Zn_1.0Nb_1.5O₇-3xBi₂Zn_2/3Nb_4/3O₇-2xLiZnNbO₄ (x=0.03-0.21), was synthesized through reactive liquid phase sintering of Bi_1.5Zn_1.0Nb_1.5O₇-xLi₂CO₃ ceramic at temperatures ranging from 850℃ to 920℃ for 4 hours. During sintering, Li₂CO₃ reacted with Bi_1.5Zn_1.0Nb_1.5O₇, resulting in the formation of Bi₂Zn_2/3Nb_4/3O₇, and LiZnNbO₄. The resulting sintered body exhibited a relative sintering density exceeding 96% of the theoretical density. By altering the initial Li₂CO₃ content (x) and consequently modulating the volume fraction of Bi_1.5Zn_1.0Nb_1.5O₇, Bi₂Zn_2/3Nb_4/3O₇, and LiZnNbO₄ in the final sintered body, a sample with high dielectric constant (ε_r), low dielectric loss (tan δ), and the temperature coefficient of dielectric constant (TCε) characterized by NP0 specification (TCε ≤ ±30 ppm/℃) was achieved. As the Li₂CO₃ content increased from x=0.03 mol to x=0.15 mol, the volume fraction of Bi₂Zn_2/3Nb_4/3O₇ and LiZnNbO₄ in the composite increased, while the volume fraction of Bi_1.5Zn_1.0Nb_1.5O₇ decreased. Consequently, the dielectric constant (εr) of the composite materials varied from 148.38 to 126.99, the dielectric loss (tan δ) shifted from 5.29×10^-4 to 3.31×10^-4, and the temperature coefficient of dielectric constant (TCε) transitioned from -340.35 ppm/℃ to 299.67 ppm/℃. A dielectric exhibiting NP0 characteristics was achieved at x=0.09 for Li₂CO₃, with a dielectric constant (ε_r) of 143.06, a dielectric loss (tan δ) value of 4.31×10^-4, and a temperature coefficient of dielectric constant (TCε) value of -9.98 ppm/℃. Chemical compatibility experiment with Ag electrode revealed that the developed composite material exhibited no reactivity with the Ag electrode during the co-firing process.

• Journal of Sensor Science and Technology
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• v.9 no.2
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• pp.146-152
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• 2000

Lithium doped zinc oxide(ZnO:Li) films are prepared by rf magnetron sputtering on Corning 7059 glass substrate using specifically designed ZnO targets containing different amount of $Li_2CO_3$ powder as the Li doping source. The structural properties of the Li doped ZnO films are investigated by XRD, SEM and AFM. The electrical properties of the ZnO:Li films are measured for various deposition conditions, such as the substrate temperature, $O_2$/Ar gas ratio and rf power. The effects of the $Li_2CO_3$ content in target and the deposition conditions on the structural and electrical properties were studied. When ZnO:Li films were sputtered at the substrate temperature of $200^{\circ}C$, $O_2$/Ar gas ratio of 100% and rf power of 100W with a target containing less than 1wt% content of $Li_2CO_3$, showed good surface morphology, strong c-axis orientation and high resistivity of more than $10^8{\Omega}cm$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.947-950
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• 2004

[ $ZnCr_2O_4$ ]에 $Li_2CO_3$를 $5{\sim}30wt%$ 범위에서 정량적으로 첨가한 감습재료에서 screen printing법으로 알루미나 기판 위에 후막으로 인쇄하고 $650\sim750^{\circ}C$에서 소결하여 후막 습도센서를 제작하였으며, $30\sim90%RH$ 범위에서 상대습도에 따른 저항 및 정전용량 특성을 조사하였다. $ZnCr_2O_4$에 $Li_2CO_3$가 5wt%가 첨가된 조성의 센서는 70%RH이상에서, 25wt%이상 첨가된 조성의 센서는 40%RH이하에서 저항 및 정전용량이 급격히 변화하는 switching 현상을 나타내었다. 반면, $ZnCr_2O_4$에 $Li_2CO_3$가 15wt%가 첨가된 조성의 센서는 선형적으로 저항은 감소하였고, 정전용량은 증가하였다.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.15 no.3
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• pp.120-123
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• 2005

The 5 mol% ZnO doped $LiNbO_3$ film and the 2 mol% MgO doped $LiNbO_3$ film were grown on the $LiNbO_3$ (001) substrate by liquid phase epitaxy (LPE) method with $Li_2CO_3-V_2O_5$ flux system. The crytsallinity and the lattice mismatch between $Zn:LiNbO_3$, film and $Mg:LiNbO_3$, film were analyzed by x-ray rocking curve (XRC). In addition, the ZnO and MgO distribution in the cross-section of the multilayer thin films was observed using electron probe micro analyzer (EPMA).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.297-297
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• 2007

The $(B_{0.5},Sr_{0.5})TiO_3$ ceramics, which added with low sintering materials $Li_2CO_3$ and ZnBO, was investigated for LTCC(low temperature co-fired ceramic) applications. To compare sintering temperature of $(B_{0.5},Sr_{0.5})TiO_3$ respectively, we added 1, 2, 3, 4, and 5wt% of $Li_2CO_3$ and ZnBO to $(B_{0.5},Sr_{0.5})TiO_3$. For confirming the sintering temperature, the respective specimens were sintered from $750^{\circ}C$ to $1200^{\circ}C$ by $50^{\circ}C$. The case of $Li_2CO_3$ greatly lowered the sintering temperature of $(B_{0.5},Sr_{0.5})TiO_3$ ($1350^{\circ}C$) below $900^{\circ}C$. The addition of ZnBO improved the loss tangent of $(B_{0.5},Sr_{0.5})TiO_3$. The crystalline structure of $LiCO_3$ doped $(B_{0.5},Sr_{0.5})TiO_3$ and ZnBO doped $(B_{0.5},Sr_{0.5})TiO_3$ was analyzed with the X-ray diffraction (XRD) analysis. The dielectric permittivity and loss tangent of $Li_2CO_3$ doped BST and ZnBO doped BST were measured with the HP 4284A precision. From the electrical characterization, we respectively obtained the dielectric permittivity 1361, loss tangent $6.94{\times}10^{-3}$ at $Li_2CO_3$ doped $(B_{0.5},Sr_{0.5})TiO_3$ (3wt%) and the dielectric constant 1180, loss tangent $3.70{\times}10^{-3}$ at ZnBO doped $(B_{0.5},Sr_{0.5})TiO_3$(5wt%).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.209-209
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• 2009

Fabrication of p-type ZnO has already proven difficult and usually inconsistent despite numerous worldwide efforts. Many research groups studied electrical and optical properties P, Li, As, N single doped ZnO thin film. In P-doped ZnO thin film, the reproducibility of p-type conduction with $P_2O_5$ as a dopant source was shown to be relatively poor. In this study, we made P single doped and Li & P co-doped ZnO target. To investigate electrical and optical properties of P single doped and Li & P co-doped ZnO thin film using $P_2O_5$ and $Li_3PO_4$ dopant source respectively was deposited by PLD. The growth temperature was changed 500, $700^{\circ}C$ and various oxygen partial pressure and post-annealing conditions was changed temperature, different gas ambient($O_2,N_2$). We investigate that how to change electrical and optical properties as function of growth temperature, oxygen partial pressure and post-annealing(RTA).

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.19 no.1
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• pp.11-14
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• 2009

Yb and Zn co-doped $LiNbO_3$ single crystal rods which had a diameter of 2 mm and a length of $15{\sim}25 mm$ were grown by micro-pulling down (${\mu}-PD$) method. The single crystals were successfully grown and had a uniform diameter and a smooth surface without crack. We realized of $LiNbO_3$ single crystals were hexagonal structure to compare with peaks of $LiNbO_3$ powder by Raman spectra. The threshold level of Zn concentration which is effective for optical damage were observed as about 1 mol% with IR transmission spectra.

• Korean Chemical Engineering Research
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• v.40 no.6
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• pp.752-756
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• 2002

Green-emitting $Zn_2SiO_4:Mn$ phosphors for PDP(Plasma Display Panel) application were synthesized by colloidal seed-assisted spray pyrolysis process. The codoping with $Gd^{3+}/Li^+$, which replaces $Si^{4+}$ site in the willemite structure, was performed to improve the luminous properties of the $Zn_2SiO_4:Mn$ phosphors. The particles prepared by spray pyrolysis process using fumed silica colloidal solution had a spherical shape, small particle size, narrow size distribution, and non-aggregation characteristics. The $Gd^{3+}/Li^+$ codoping amount affected the luminous characteristics of $Zn_2SiO_4:Mn$ phosphors. The codoping with proper amounts of $Gd^{3+}/Li^+$ improved both the photoluminescence efficiency and decay time of $Zn_2SiO_4:Mn$ phosphor particles. In spray pyrolysis, the post-treatment temperature is another factor controlling the luminous performance of $Zn_2SiO_4:Mn$ phosphors. The $Zn_{1.9}SiO_4:Mn_{0.1}$ phosphor particles containing 0.1 mol% $Gd^{3+}/Li^+$ co-dopant had a 5% higher PL intensity than the commercial product and 5.7 ms decay time after post-treatment at $1,145^{\circ}C$.

• The Korean Journal of Ceramics
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• v.3 no.2
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• pp.110-115
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• 1997

Li-doped ZnO films were prepared on Corning 1737 glass substrate by an rf magnetron sputtering technique using ZnO targets with various $Li_2CO_3$ contents ranging from 0 to 10 mol%. The effects of Li doping on the crystallinity and electrical properties of ZnO films were studied for their SAW filter applications. The film resistivity largely increased without suppressing the c-axis orientation and crystallinity with a small addition of Li. Heat treatment of the film at 40$0^{\circ}C$ induced that the film resistivity, c-axis orientation and crystallinity slightly increased. However, heat treatment of the film at 50$0^{\circ}C$ resulted in much lower resistivity than that of as-deposited film due to the increase of electron concentration caused by the evaporationof Li atoms from the ZnO film. Large addition of Li into the ZnO film rather diminished the film resistivity and suppressed the c-axis growth. It was concluded that a small doping of Li into the ZnO film and heat treatment at 40$0^{\circ}C$ caused the film resistivity to be high enough for SAW filter applications without suppression of the c-axis orientation and crystallinity.