• Analytical Science and Technology
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• v.9 no.4
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• pp.382-391
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• 1996

In this study, 12 different chemical species of fine ceramic($BaTiO_3$) were synthesized as the standard materials for the fast and accurate measurements of X-ray fluorescence spectrometry. Samples were diluted to sixteen times with the filling compound ($Li_2B_4O_7+LiBO_2$) in order to remove the matrix effect, and to get the convenient storage and homogeneity of ingredients. The matrix effects among the ingredients were corrected by the empirical coefficient method based on the Lucas-Tooth and Price model. The standard curve on 12 standard materials containing 15 elements were obtained by using X-ray fluorescence spectrometry at three different laboratories. The correlation factors of BaO, PbO, SrO, $Fe_2O_3$, $La_2O_3$, $SnO_2$, ZnO, $ZrO_2$, CaO indicated the relati vely good agreement over 0.995 among the three different laboratories. $SiO_2$ and $Al_2O_3$ showed the poor linearity because of their low fluorescence intensities.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.140-140
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• 2009

The Metal-ferroelectric-semiconductor (MFS) structure has superior advantages such as high density integration and non-destructive read-out operation. However, to obtain the desired electrical characteristics of an MFS structure is difficult because of interfacial reactions between ferroelectric thin film and Si substrate. As an alternative solution, the MFS structure with buffer insulating layer, i.e. metal-ferroelectric-insulator-semiconductor (MFIS), has been proposed to improve the interfacial properties. Insulators investigated as a buffer insulator in a MFIS structure, include $Ta_2O_5$, $HfO_2$, and $ZrO_2$ which are mainly high-k dielectrics. In this study, we prepared the Dy-doped $La_2O_3$ solution buffer layer as an insulator. To form a Dy-doped $La_2O_3$ buffer layer, the solution was spin-coated on p-type Si(100) wafer. The coated Dy-doped $La_2O_3$ films were annealed at various temperatures by rapid thermal annealing (RTA). To evaluate electrical properties, Au electrodes were thermally evaporated onto the surface of the samples. Finally, we observed the surface morphology and crystallization quality of the Dy-doped $La_2O_3$ on Si using atomic force microscopy (AFM) and x-ray diffractometer (XRD), respectively. To evaluate electrical properties, the capacitance-voltage (C-V) and current density-voltage (J-V) characteristics of Au/Dy-doped La2O3/Si structure were measured.

• Journal of the Korean Ceramic Society
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• v.36 no.2
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• pp.145-150
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• 1999

Gd1-xSrxMnO3(0$\leq$X$\leq$0.6) as the cathode for solid oxide fuel cell was synthesized by citrate process and studied for its crystal structure, electrical conductivity, thermal expansion coefficient (TEC), and investigated reactivity with 8 mol% yttria stabilized zirconia(8YSZ) or Ce0.8Gd0.2O1.9 (CGO). The crystal structure of Gd1-xSrxMnO3 changed from orthorhombic (0$\leq$X$\leq$0.3) through cubic (0.4$\leq$X$\leq$0.5) to tetragonal structure (X=0.6). When Sr contents was increased, the electrical conductivity of Gd1-xSrxMnO3 was inthose of La1-xSrxMnO3, 8YSZ and CGO if Sr content was above 30mol%. TEC of Gd1-xSrxMnO3 was increased with Sr content. After heat treatment at 1300$^{\circ}C$ for 48 hours, reaction product of Gd1-xSrxMnO3 and 8YSZ was SrZrO3. However CGO had no reaction product with Gd1-xSrxMnO3.

• Journal of the Korean Electrochemical Society
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• v.8 no.2
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• pp.88-93
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• 2005

Anode-supported solid oxide fuel cell (SOFC) was investigated to increase the cell power density at intermediate temperature through control of the cathode structure. The anode-supported SOFC cell were fabricated by wet process, in which the electrolyte of $8mol\%\;Y_2O_3-stabilized\;ZrO_2 (YSZ)$ was coated on the surface of anode support of Ni/YSA and then the cathode was coated. The cathode has two- or three- layered structure composed of $(La_{0.85}Sr_{0.15})_{0.9}MnO_{3-x}(LSM),\;LSM/YS$ composite (LY), and $La_{0.6}Sr_{0.4}Co_{0.2}Fe_{0.8}O_3{LSCF)$ with different thickness. Their single cells with different cathode structures were characterized by measuring the cell performance and ac impedance in the temperature range of 600 to $800^{\circ}C$ in humidified hydrogen with $3\%$ water and air. The cell with $LY\;9{\mu}m/LSM\;9{\mu}m/LSCF\;17{\mu}m$ showed best performance of $590mW/cm^2$, which was attributed to low polarization resistance due to LY and to low interfacial resistance due to LSCF.

• The Korean Journal of Ceramics
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• v.4 no.3
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• pp.260-267
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• 1998

A homogeneous and stoichimetric fine powder of the ferroelectric $Pb_[0.97}La_{0.02}(Zr_{0.64}Sn_{0.25}Ti_{0.11})O_3$ (PLZST) has been prepared by the hydroxide coprecipitation method. Studies on the crystallization behavior of precursor as a function of temperature by X-ray powder diffraction and transmission electron microscopy technique were consistent with the formation of the pyrochlore phase from amorphous, initially at low temperatures around 500~$550^{\circ}C$. Further heat treatment up to $750^{\circ}C$ resulted in development of the perovskite phase with no significant pyrochlore crystallite growth. At intermediate temperatures the precursor yields a fine mixture of pyrochlore and perovskite phases. When the pyrochlore phase was heat teated in air, slight weight increase was observed in the temperature range of 300~$700^{\circ}C$, which is thought to be caused from oxygen absorption. In argon atmosphere, weight increase was not observed. On the other hand, weight loss began to occur near $700^{\circ}C$, with giving off mostly CO2 gas. This implies that the pyrochlore phase seems to be crystallorgraphycally and thermodynamically metastable. An apparent activation energy of 53.9 ㎉/mol was estimated for the pyrochlore-perovskite phase transformation.

• Journal of the Korean Ceramic Society
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• v.48 no.2
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• pp.127-133
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• 2011

Non-Alkali multicomponent $La_2O_3-Al_2O_3-SiO_2$ glasses has been designed and analyzed on the basis of a mixture design experiment with constraints. Fitted models for thermal expansion coefficient, glass transition temperature, Young's modulus, Shear modulus and density are as follows: ${\alpha}(/^{\circ}C)=8.41{\times}10^{-8}x_1+5.72{\times}10^{-7}x_2+2.13{\times}10^{-7}x_3+1.09{\times}10^{-7}x_4+1.10{\times}10^{-7}x_5+1.15{\times}10^{-7}x_6+2.72{\times}10^{-8}x_7+2.41{\times}10^{-7}x_8-1.08{\times}10^{-8}x_1x_2+4.28{\times}10^{-8}x_3x_7-2.02{\times}10^{-8}x_3x_8-1.60{\times}10^{-8}x_4x_5-2.71{\times}10^{-9}x_4x_8-2.19{\times}10^{-8}x_5x_6-3.89{\times}10^{-8}x_5x_7$ $T_g(^{\circ}C)=7.36x_1+15.35x_2+20.14x_3+8.97x_4+13.85x_5+4.22x_6+28.21x_7-1.44x_8-0.84x_2x_3-0.45x_2x_5-1.64x_2x_7+0.93x_3x_8-1.04x_5x_8-0.48x_6x_8$ $E(GPa)=2.04x_1+14.26x_2-1.22x_3-0.80x_4-2.26x_5-1.67x_6-1.27x_7+3.63x_8-0.24x_1x_2-0.07x_2x_8+0.14x_3x_6-0.68x_3x_8+0.29x_4x_5+1.28x_5x_8$ $G(GPa)=0.35x_1+1.78x_2+1.35x_3+1.87x_4+9.72x_5+29.16x_6-0.99x_7+3.60x_8-0.48x_1x_6-0.50x_2x_5+0.08x_3x_7-0.66x_3x_8+0.94x_5x_8$ ${\rho}(g/cm^3)=0.09x_1+0.51x_2-4.94{\times}10^{-3}x_3-0.03x_4+0.45x_5-0.07x_6-0.10x_7+0.07x_8-9.60{\times}10^{-3}x_1x_2-8.20{\times}10^{-3}x_1x_5+2.17{\times}10^{-3}x_3x_7-0.03x_3x_8+0.05x_5x_8$ The optimal glass composition similar to the thermal expansion coefficient of Si based on these fitted models is $65.53SiO_2{\cdot}25.00Al_2O_3{\cdot}5.00La_2O_3{\cdot}2.07ZrO_2{\cdot}0.70MgO{\cdot}1.70SrO$.

• Journal of the Korean Vacuum Society
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• v.15 no.2
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• pp.173-179
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• 2006

We have investigated structural and electrical properties of $PbZr_{0.3}Ti_{0.7}O_{3}$ (PZT) thin films deposited by pulsed laser deposition methods. PZT thin films have been deposited on $LaMnO_3$ (LMO) bottom electrodes with $LaAlO_3$ (LAO) substrates during different deposition times. High-resolution x-ray diffraction data have shown that all the PZT films and bottom electrodes are highly oriented. The thickness of each film is determined by field-emission scanning electron microscope. We have also observed root mean square roughness by using atomic force microscopy mode, and local polarization distribution and retention behavior of a ferroelectric domain by using piezoelectric force microscopy mode. A PZT/LMO structure has shown good ferroelectric and retention properties as the media for nano-storage devices.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1995.05a
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• pp.187-191
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• 1995

Thin film of the (Pb$\_$1-x/La.sub x/)(Zr$\_$0.25/Ti/Sub 0.48/) O$_3$(x=0~13[at%]) were prepared by Sol - Gel method. Multi-layer PLZT thin films were fabricated by spin-coating on Pt/Ti/SiO$_2$/Si substrate. The crystallinity and microstructure of the films were investigated with the sintering condition. At the sintering temperature of of 600[$^{\circ}C$], the perovskite phase was dominat. PLZT(11/52/48)thin films sintered at 600[$^{\circ}C$], 1[hr] had good dielectric constant (1236), dielectric loss (2.2[%]), remanent polarization (1.38[${\mu}$C/$\textrm{cm}^2$] and coercive field(16.86[ kV/cm]) respectively.

• Progress in Superconductivity and Cryogenics
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• v.10 no.2
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• pp.20-23
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• 2008

[ $La_2Zr_2O_7$] (LZO) buffer layers were deposited on biaxially textured Ni-W substrates by chemical solution deposition method (CSD). In this study, the effect of $B_2O_3$ addition on texture and surface roughness of LZO films was investigated. The alkoxide-based precursor solution was employed to synthesize the precursor solution of LZO and the solution was coated on biaxially textured Ni-W substrates and subsequently annealed at $900^{\circ}C$ for crystallization. The pure LZO film without $B_2O_3$ addition showed a (222) reflection in the X-ray diffraction (XRD) profile. The intensity of (222) reflection was enhanced and more rough surface was obtained after further repetition of coating. Contrary to this, the LZO film prepared by $B_2O_3$ added precursor solution shows well-developed (400) reflection peak in the XRD profile and excellent biaxial texture (${\Delta}{\theta}=4.3^{\circ}$, ${\Delta}{\phi}=6.8^{\circ}$). The surface roughness of LZO films were also improved by addition of $B_2O_3$ even after multicoating ($R_{rms}{\sim}3.1nm$). It was shown that the LZO film with smooth surface and biaxial texture was grown on the biaxially textured Ni-W substrates with addition of $B_2O_3$ in the precursor solution.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.307-307
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• 2010

최근 유한연료의 고갈로 인해 세계 유가가 불안정 됨으로서 대체 에너지에 대한 연구가 많이 진행 되고 있다. 특히 압전 소자를 이용한 에너지 하베스팅은 압전 역효과를 이용한 것으로서 주변에서 무의미하게 버려지는 진동이나 바람, 열 에너지를 실 생활에 사용할 수 있는 전기 에너지로 변환할 수 있는 유망한 기술 중 하나이다. 이러한 에너지 하베스팅 기술은 일본과 같은 선진국에서 이미 지하철 및 일반 다리와 같이 진동이 극히 많은 곳에서 응용되고 있다. 이러한 에너지 하베스팅 기술을 응용 하려면 전압출력 계수($g_{33}$)가 높아야 한다. 이것은 압전 d 상수와 유전상수에 영향을 많이 받는 것으로 알려져 있다. 현재가지 응용되는 압전 하베스팅 조성은 Pb(Zr,Ti)$O_3$ (PZT)를 기초로한 세라믹이 응용되고 있다. Pb(Zr,Ti)$O_3$ (PZT) 세라믹은 Morpohotropic phase boundary(MPB)에서 전기기계 결합계수 (kp) 와 기계적 품질계수 (Qm) 이 각각 0.5와 500으로 우수한 특성을 나타낸다. 또한 큐리온도 (Tc) 도 $400^{\circ}C$로 온도 안정성 또한 높다. 하지만 $1000^{\circ}C$ 이상에서 소결하는 PbO는 소결 중 급격한 휘발로 환경적 오염 뿐 아니라 특성의 저하를 야기시킨다. 그래서 몇몇 나라에서는 그 사용을 제한하고 점차적으로 사용을 줄여 나가고 있는 동시에 PbO가 첨가되어 있지 않은 Lead-Free 세라믹의 연구가 많이 진행되고 있다. Lead-Free 세라믹 중 alkaline niobate를 기초로 한 페로브스카이트 구조의 ($Na_{0.5}K_{0.5})NbO_3$ (NKN) 은 PbO를 기초로 한 세라믹을 대체할 유망한 후보자 중 하나이다. 하지만 NKN세라믹의 K 성분의 조해성 및 고온에서의 휘발로 인해 일반 적인 소결 방법으로는 고밀도의 세라믹을 얻기 매우 어렵다. 그래서 Hot pressing, Hot forging, RTGG(Reactive Template Grain Growth), SPS(Spark plasma Sintering)와 같은 특별한 소결 법을 이용하거나 $K_8CuNb_4O_{23}$(KCN) 이나 $K_{5.4}Cu_{1.3}Ta_{10}O_{29}$(KCT) 등을 첨가하여 그 소결성을 향상 시키는 방법도 있다. 또한 압전 d상수를 향상 시키기 위해 $Nb_2O_5$나, $La_2CO_3$, $CeO_2$, $Li_2CO_3$ 등을 치환함으로써 압전 d상수를 향상 시켜 전압출력 계수를 높이는 연구 또한 많은 보고가 되어 있다. 특히 $Li_2CO_3$의 첨가는 일반 적인 소결 방법으로도 밀도의 조밀함을 향상 시켜 그에 따른 높은 유전율과 전기기계 결합계수, 압전 d상수를 가져 많은 연구가 되어지고 있다. 그래서 본 연구에서는 일반적인 ($K_{0.5}N_{0.5})_{1-x}Li_x(Nb_{0.96}Sb_{0.04})O_3$ + 0.2mol%$La_2O_3$ + 1.2mol%$K_8CuNb_4O_{23}$ 세라믹에 x(=Li) 치환에 따른 유전 및 압전특성을 조사하였다.