• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제48권5호
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• pp.396-401
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• 1999

In this study, $Ar^+$ ion laser etching process of single/poly-crystalline Si with $CCl_2F_2$ gas is investigated for MEMS applications. In general, laser direct etching process is useful in microelectronic process, fabrication of micro sensors and actuators, rapid prototyping, and complementary processing because of the advantages of 3D micromachining, local etching/deposition process, and maskless process with high resolution. In this study, a pyrolytic method, in which $CCl_2F_2$ gasetches molten Si by the focused laser, was used. In order to analyze the temperature profile of Si by the focused laser, the 3D heat conduction equation was analytically solved. In order to investigate the process parameters dependence of etching characteristics, laser power, $CCl_2F_2$ gas pressure, and scanning speed were varied and the experimental results were observed by SEM. The aspect ratio was measured in multiple scanning and the simple 3D structure was fabricated. In addition, the etching characteristics of $6\mum$ thick poly-crystalline Si on the insulator was investigated to obtain flat bottom and vertical side wall for MEMS applications.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1999년도 하계학술대회 논문집 E
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• pp.2453-2455
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• 1999

We propose that we use a porous-Si for a new spatial walk-off polarizing material with a large split angle. The beam-split an91e f is determined by the filling factor g(or porosity p) of the columnar dielectric substance and the slant angle $\theta$. Theoretically, by the assuming that $n_2$=3.5, and $n_1$=1 one can predict that a large split angle, up to $27^{\circ}$, is possible if one can construct such films with $Si.^{[3]}$ To accomplish this, we use porous-Si. As a result of theoretical simulation, the best structural parameters for attaining the maximum split angle $\phi$=$27.5^{\circ}$ are $\theta$=$58.7^{\circ}$ and p=57.6%.

• Journal of Electrical Engineering and Technology
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• 제9권5호
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• pp.1719-1723
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• 2014

In this study, the microwave dielectric properties of nano spheroidization glass powders added $Ba(Zn_{1/3}Ta_{2/3})O_3$ ceramics prepared by solid state reaction have been investigated. Adding $(Ba_{0.4}Ca_{0.6})SiO_3$ nano spheroidization glass powders could effectively promote the densification even in the case of decreasing the sintering temperature. When the glass frit is 0.3 wt% and sintering is carried out at a temperature of $1500^{\circ}C$ for 6 hr, a temperature stable microwave dielectric ceramic could be obtained, which has a dielectric constant (${\varepsilon}_r$) of 30.2, a quality factor ($Q{\times}f_0$) of 124,000 GHz and a temperature coefficient of resonance frequency (${\tau}_f$) of $2ppm/^{\circ}C$.

• 한국세라믹학회지
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• 제36권12호
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• pp.1350-1355
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• 1999

Sintering characteristics and dielectric properties of low temperature sinterable Glass/Ceramic dielectric materials were investigated. The dielectric materials which were developed for microwave frequency applications consist of SiO2-TiO2-Bi2O3-RO system(RO:BaO-CaO-SrO) crystallizable glass and Al2O3 as a ceramic filler. Sintering experiments showed that no more densification occurred above 80$0^{\circ}C$ and bulk density and shrinkage depended on Al2O3 content only. Results of dielectric measurements showed that $\varepsilon$r Q$\times$f and $\tau$f of the material containing 30wt% Al2O3 were 17.3, 600 and +23 ppm respectively. Those values for 45 and 60wt% Al2O3 samples were 11.6, 1400, +0.7 ppm and 7.2, 2000, -8.5 ppm, repectively. The results clearly showed that the Glas/Ceramic materials of present experiment decreased in $\varepsilon$r and increased in $\times$f value and changed from positive to negative value in $\tau$f value with the increasement of Al2O3 content.

• 마이크로전자및패키징학회지
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• 제6권2호
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• pp.51-61
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• 1999

R.f. magnetron sputtering법에 의해 $SrBi_2Ta_2O_9$ 박막을 $Pt/SiO_2$/Si p-tyPp (100) 기판 위에 제조하였다. 제조된 박막을 $800^{\circ}C$에서 열처리한 후 증착 조건에 따라 미세구조와 전기적 특성을 측정하였다. $800^{\circ}C$에서 열처리된 박막은 (006), (111), (200) 및 이차상인 BiPt 피크가 XRD 분석 결과 나타났으며, 가스 압력의 감소와 기판 온도의 증가에 따라 결정입자는 성장하였다. 50mtorr, $100^{\circ}C$에서 증착 후 $800^{\circ}C$에서 열처리한 박막의 두께는 200nm이었다. 이 박막의 잔류분극과 항전계 값은 각각 20.07 $\mu$C/$\textrm {cm}^2$, 79kV/cm이었다.

• 한국진공학회지
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• 제4권S1호
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• pp.34-39
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• 1995

Various silicon films were prepared by thermal- and UV photo-CVD processes. The reactants were SiH4, Si2H6, SiH2F2, SIF4, and H2. Silicon films grown at temperatures below $500 ^{\circ}C$ were either amorphous or crystalline depending on the process conditions, and the growth rates ranged between 5 and $80\AA$min. Crystallinity of the film was improved even at $250^{\circ}C$ when the film was grown by photo-CVD using fluoro-silanes as the reactants. Analysis of the film by RBS, SIMS, XRD, and ex-situ IR indicated that substrate surface was contaminated by oxygen and other impurities when the reactants contained neither hydrogen nor fluoro-silnanes, but when fluoro-silanes were used as reactants the silicon film was highly crystalline.

• 전기화학회지
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• 제4권1호
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• pp.6-9
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• 2001

유리섬유(glass fiber cloth, GFC)가 보강제로 사용된 고분자 겔 전해질(polymeric gel electrolytes, PGEs)에 $SiO_2$를 첨가하여 전해질의 전기 화학적 특성을 조사하였다. 가소제로는 Ethylene carbonate(EC) , propylene carbonate(PC), diethyl carbonate(DEC)를, 리튬염으로는 $LiClO_4$를 고분자로는 polyacrylronitrile(PAN)과 poly(vinylidene fluoride-co-hexafluoro propylene)(P(VdF-co-HFP))을 사용하여 $80\~90{\mu}m$의 두께로 전해질을 제조하였다. 제조된 전해질은 모두 상온체서 $10^{-3}S/cm$의 이온 전도도를 나타내었고, 4.8V까지 안정하였다. 리튬금속을 사용하여 제조된 셀의 임피던스 결과에서는 시간이 지남에 따라 모든 전해질이 부동태 피막의 성장으로 계면저항이 증가했으나, $SiO_2$첨가비율에 따라 뚜렷한 차이는 보이지 않았다. $LiClO_2$와 mesophase pitch-based carbon fiber(MCF)를 각각 양극과 음극으로 사용하여 제조된 겔의 임피던스에서는 $SiO_2$가 첨가되지 않은 셀의 옴 저항이 충전, 방전이 진행되는 동안 많은 변화를 보였으며, $SiO_2$가 첨가된 셀의 저항은 거의 변화되지 않았고, 계면의 변화도 적었다. 또한 방전용량에서도 $SiO_2$가 $20\%$가 첨가된 전해질이 0.2C의 방전속도에132mAh/g의 비 용량을 나타내었고, 2C의 방전속도에서$85\%$의 방전용량을 유지하였다.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2012년도 추계총회 및 학술대회 논문집
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• pp.16-16
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• 2012

Mg and its alloys have been of great interest because of their low density of 1.7, 30% lighter than Al, but their wide applications have been limited because of their poor resistances against corrosion and/or abrasion. Corrosion resistance of Mg alloys can be improved by formation of anodic films using anodic oxidation method in aqueous electrolytes. Plasma electrolytic oxidation (PEO) is one of anodic oxidation methods by which hard anodic films can be formed as a result of micro-arc generation under high electric field. PEO method utilize not only substrate elements but also chemical components in electrolytes to form anodic films on Mg alloys. PEO films formed on AM50 magnesium alloy in an acidic fluozirconate electrolyte were observed to consist of mainly $ZrO_2$ and $MgF_2$. Liu et al reported that PEO coating on AM30 Mg alloy consists of $MgF_2$-rich outer porous layer and an MgO-rich dense inner layer. PEO films prepared on ACM522 Mg die-casting alloy in an aqueous phosphate solution were also reported to be composed of monoclinic $Mg_3(PO_4)_2$. $CeO_2$-incorporated PEO coatings were also reported to be formed on AZ31 Mg alloys in $CeO_2$ particle-containing $Na_2SiO_3$-based electrolytes. Magnesium tin hydroxide ($MgSn(OH)_6$) was also produced on AZ91D alloy by PEO process in stannate-containing electrolyte. Effects of $OH^-$, $F^-$, $PO{_4}^{3-}$ and $SiO{_3}^{2-}$ ions and alloying elements of Al and Sn on the formation of PEO films on pure Mg and Mg alloys and their protective properties against corrosion have been investigated in this work. $PO{_4}^{3-}$, $F^-$ and $SiO{_3}^{2-}$ ions were observed to contribute to the formation of PEO films but $OH^-$ ions were found to break down the surface films under high electric field. The effect of pulse current on the formation of PEO films will be also reported.

• Restorative Dentistry and Endodontics
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• 제35권1호
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• pp.13-19
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• 2010

이 연구는 다이몬드 포인트와 카바이드 버 및 SiC paper로 삭제한 상아질에 대한 자가부식 프라이머 접착제의 결합강도를 비교하고, 실험실에서 사용하는 SiC paper와 유사한 결합강도를 나타내는 회전용 삭제기구를 알아보기 위하여 시행하였다. 56개의 발거된 대구치 치관의 교합면 상아질을 노출시켜 1.2 mm의 두께의 시편을 제작한 후 8개의 군으로 분류하였다. 1군은 standard diamond point (TF-12), 2군은 fine diamond point (TF-12F). 3군은 extrafine diamond point (TF-12EF), 4군은 cross-cut carbide bur (no. 557), 5군은 plain-cut carbide bur (no. 245), 6군은 P 120-grade SiC paper, 7군은 P 220-grade SiC paper, 8군은 P 800-grade SiC paper를 사용하여 각 시편의 상아질 표면을 약 0.2 mm정도 삭제하였다. 상아질 표면에 Clearfil SE Primer와 Bond를 적용하고 Tygon tube를 이용하여 Clearfil AP-X를 충전하고 40초간 광조사 하였다. 제작된 시편은 만능시험기를 이용하여 를 미세전단 결합강도는 측정한 후, 각 군의 결합강도를 one-way ANOVA와 Tukey검정을 이용하여 분석하여 다음과 같은 결과를 얻었다. 자가부식 프라이머 접착제 사용 시 상아질에 대한 개선된 접착을 위해서는 초미세입자 다이아몬드 포인트의 사용이 추천되며, 실험실적인 연구에서 P 220-grade SiC paper의 사용은 미세입자 다이아몬드 포인트나 카바이드 버로 삭제한 상아질 면과 유사한 결합강도를 나타내었다.

• Bulletin of the Korean Chemical Society
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• 제30권6호
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• pp.1285-1292
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• 2009

Large single crystals of zeolite, |$Na_{75}$|[$Si_{117}Al_{75}O_{384}$]-FAU (Na-Y, Si/Al = 1.56), were synthesized from gels with composition of 3.58Si$O_2$ : 2.08NaAl$O_2$ : 7.59NaOH : 455$H_2$O : 5.06TEA : 2.23TCl. One of these, a colorless single-crystal was ion exchanged by allowing aqueous 0.02 M CsOH to flow past the crystal at 293 K for 3 days, followed by dehydration at 673 K and 1 ${\times}\;10^{-6}$ Torr for 2 days. The crystal structure of fully dehydrated partially $Cs^+$-exchanged zeolite Y, |$Cs_{45}Na_{30}$|[$Si_{117}Al_{75}O_{384}$]-FAU per unit cell (a = 24.9080(10) $\AA$) was determined by single-crystal X-ray diffraction technique in the cubic space group Fd $\overline{3}$ m at 294(1) K. The structure was refined using all intensities to the final error indices (using only the 877 reflections with $F_o\;>\;4{\sigma}(F_o))\;R_1$ = 0.0966 (Based on F) and $R_2\;=\;0.2641\;(Based\;on\;F^2$). About forty-five $Cs^+$ ions per unit cell are found at six different crystallographic sites. The 2 $Cs^+$ ions occupied at site I, at the centers of double 6-ring (D6Rs, Cs-O = 2.774(10) $\AA$ and O-Cs-O = 88.9(3) and 91.1(3)$^o$). Two $Cs^+$ ions are found at site I’ in the sodalite cavity; the $Cs^+$ ions were recessed 2.05 $\AA$ into the sodalite cavity from their 3-oxygen plane (Cs-O = 3.05(3) $\AA$ and O-Cs-O = 77.4(13)$^o$). Site-II’ positions (opposite single 6-rings in the sodalite cage) are occupied by 7 $Cs^+$ ions, each of which extends 2.04 $\AA$ into the sodalite cage from its 3-oxygen plane (Cs-O = 3.067(11) $\AA$ and O-Cs-O = 80.1(3)$^o$). The 26 $Cs^+$ ions are nearly three-quarters filled at site II in the supercage, being recessed 2.34 $\AA$ into the supercage (Cs-O = 3.273(8) $\AA$ and O-Cs-O = 74.3(3)$^o$). The 4 $Cs^+$ ions are found at site III deep in the supercage (Cs-O = 3.321(19) and 3.08(3) $\AA$), and 4 $Cs^+$ ions at another site III’ (Cs-O = 2.87(4) and 3.38(4) $\AA$). About 30 $Na^+$ ions per unit cell are found at one crystallographic site; The $Na^+$ ions are located at site I’ in the sodalite cavity opposite double 6-rings (Na-O = 2.578(11) $\AA$ and O-Na-O = 97.8(4)$^o$).