• Journal of the Korean Ceramic Society
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• v.34 no.2
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• pp.163-170
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• 1997

The retarding effects of MgSiF6.6H2O on the hydration of portland cement were studied. The setting time, flow value and compressive strength of mortar were measured and the mechanism of retardation was also studied by ion concentration in solution, SEM, BET, and X-ray diffraction. The results are as follows ; 1. Setting time was delayed by the addition of MgSiF6.6H2O. 2. The flow value of mortar decreases depending upon the amount of MgSiF6.6H2O. 3. The compressive strength was almost same or some increase on 28 days hydration. 4. The main retardation mechanism of MgSiF6 on the hydration of portland cement may be explained by the following hypothesis. MgSiF6 depressing the Ca++ and K+ ion concentration of cement paste solution be-cause of the recrystalization of K2SiF6 and CaF2 phase. The new products of K2SiF6 and CaF2 deposit on the surface of unhydrated cement powder and harzard the mass transfer through these layer. The low con-centration of Ca++, K+ ion in solution was decreasing the hydration rate of portland cement.

• Journal of the Korean Ceramic Society
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• v.33 no.3
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• pp.307-312
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• 1996

In following addition of 0.3, -0.6, 0.8, 1.0 and 5 weight percent MgSiF66H2O studies have been made of the setting and hardening characteristics of ordinary portland cement. MgSiF66H2O retarded the setting time of ordinary portland cement and extended the induction pariod of the hydration. In ordinary portland cement the setting characteristics were drastically altered especially at high MgSiF66H2O contents. Evidence was also obtained by the formation of a KSiF6 which was very fine particle. The results wee as follows. 1. Slump was slightly decreased when MgSiF66H2O added. 2. Setting time was retarded depending on the amount of retarding agent 2 to 8 hours 3. Compressive strength was almost same or some increased in comparision with opc. 4. When MgSiF66H2O was added to cement paste K2SiF6 were formed It was fine-sized distributed uniformly in cement grain and caused retardation of cement setting.

• Korean Journal of Materials Research
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• v.1 no.4
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• pp.214-220
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• 1991

The effects of $SiO_2$ reactive ion etching (RIE) in $CHF_{3/}C_2F_6$ on the surface properties of the underlying Si substrate were studied by X-ray photoelectron spectroscopy(XPS) and secondary ion mass spectrometry(SIMS) techniques. Angle-resolved XPS analysis was carried out as non-destructive depth profile one for investigating the chemical bonding states of silicion, carbon, oxygen and fluorine. The residue layer consists of C-F polymer. O-F bond was found on the top of the polymer layer and Si-O, Si-C and Si-F bonds were detected between Si substrate and polymer film. A 60nm thick damaged layer of silicon surface mainly contains carbon and fluorine.

• Journal of the Korean Ceramic Society
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• v.39 no.2
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• pp.178-183
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• 2002

Zinc fluosilicate ($ZnSiF_6$, 15% aqueous solution) was prepared using zinc oxide (ZnO) and fluosilicic acid ($H_2SiF_6$) by soluiton synthetic method. The fluidity and hydration properties of cement which was added $ZnSiF_6$ (aq.) as an additive for cement were studied. At water to cement ratio (W/C) equals to 0.45, the initial fluidity and slump loss of cement paste which the addition of $ZnSiF_6$ (aq.) was increased from 1.0% to 4.0% based on cement weight were investigated. Initial fluidity of cement paste was measured by mini-slump test and slump loss was examined by measuring the fluidity variation of cement paste with time elapsed from 0 min to 120 min at intervals 30 min. Also, the effect of $ZnSiF_6$ addition on the setting and hydration of cement paste when $ZnSiF_6$ increased in the addition range 1.0% to 3.0% were investigated. The fluidity of cement paste which was added 2.1% $ZnSiF_6$ (aq.) presented the highest value among all addition ranges. The setting time of cement paste was retarded gradually and the heat evolution of hydrated cement was reduced with the increasing of $ZnSiF_6$ addition.

• Bulletin of the Korean Chemical Society
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• v.34 no.12
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• pp.3738-3742
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• 2013

The reaction mechanism of $SiF_2$ radical with HNCO has been investigated by the B3LYP method of density functional theory(DFT), while the geometries and harmonic vibration frequencies of reactants, intermediates, transition states and products have been calculated at the B3LYP/$6-311++G^{**}$ level. To obtain more precise energy result, stationary point energies were calculated at the CCSD(T)/$6-311++G^{**}$//B3LYP/$6-311++G^{**}$ level. $SiF_2+HNCO{\rightarrow}IM3{\rightarrow}TS5{\rightarrow}IM4{\rightarrow}TS6{\rightarrow}OSiF_2CNH(P3)$ was the main channel with low potential energy, $OSiF_2CNH$ was the main product. The analyses for the combining interaction between $SiF_2$ radical and HNCO with the atom-in-molecules theory (AIM) have been performed.

• Journal of the Korean Society for Nondestructive Testing
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• v.34 no.1
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• pp.23-30
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• 2014

The wear characteristics of $SiC_f$/SiC composites were evaluated according to the alignment direction of the fibers, and the elastic wave-generated friction was detected and analyzed in wearing. The friction coefficient and wear loss were similar in the longitudinal and the transverse direction of the fibers. However, these values were lower in the vertical direction of the fibers because of the brittle nature of the fiber. The friction coefficient and the wear loss were directly proportional to each other. The dominant frequencies were 58.6 kHz for monolithic SiC and 117.2 and 136.7 kHz for $SiC_f$/SiC composites, respectively.

• Journal of the Korean Ceramic Society
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• v.20 no.1
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• pp.37-42
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• 1983

An attempt was made to derive a possible synthetic mechanism of Fluoro-phlogopite (Mica, 4Mg.$Al_2O_3$.$6SiO_2$.$K_2O$.$2MgF_2$) The pevention of fluorine vaporization turned out to be the key in the synthesis of Mica in question.l Consequently the quinary system of Mica was seperately synthesized ; frist 4MgO.$Al_2O_3-6SiO_2$(ternary system) was sintered at 135$0^{\circ}C$ and $K_2O$ and $MgF_2$ were added and second 4MgO.$Al_2O_3-6SiO_2$.$K_2O$ (quarternary system) was heat-treated at 135$0^{\circ}C$ and $MgF_2$ was added. The ternary system resulted in Proto-enstatite Cordierite and Spinel phases while Forsterite and Leucite were shown in the quarternay system . In both methods Fluoro-phlogopite was systhesized but the solid state reactions to form Mica from the ternary system and the quarternary system were different. High temperature reactions in the formation of Mica were investigated employing XRD, DTA and SEM The study of the synthesis of Mica indirectly suggested a method of phase analysis of quinary system(MgO-$Al_2O_3-SiO_2-K_2O-MgF_2$) and quarternary system(MgO-$Al_2O_3-SiO_2-K_2O-MgF_2$) at various temperatures.

• Korean Journal of Materials Research
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• v.7 no.11
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• pp.969-973
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• 1997

저유전율 층간절연물질인 불소첨가 SiO$_{2}$박막을 ECR(electron cyclotron resonance) Plasma chemical vapor deposition 법으로 성막하였다. SiOF박막의 증착은 SiF$_{4}$/O$_{2}$의 가스유량비를 변수로하여 0.2에서 1.6까지 변화시켜 증착하였고, 이때 마이크로파 전력은 700W, 기판온도는 30$0^{\circ}C$에서 행하였다. 증착된 SiOF박막의 흡습특성을 알아보기 위하여 Fourier transformed infrared spectroscopy(FTIR)을 이용하여 분석한 결과, 가스유량비 (SiF$_{4}$O$_{2}$)가 0.2 에서 1.6으로 증가하였을 때 Si-Ostretching피크의 위치는 1072$cm^{-1}$ /에서 1088$cm^{-1}$ /로 증가하였으며, Si-F$_{2}$피크는 가스유량비가 1.0이상에서 나타나기 시작하였다. 또한 가스유량비가 0.2에서 0.8까지 변화하여 증착한 시편은 Si-OH 피크가 관찰되지 않았지만 가스유량비가 1.0이상(11.8at.% F함유)의 시편의 경우 Si-OH 피크가 관찰되어 내흡습성이 저하되고 있음을 확인할 수 있었다.

• Journal of the Korean Vacuum Society
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• v.4 no.S2
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• pp.64-68
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• 1995

Silicon films were deposited at $430^{\circ}C$ by remote plasma chemical vapor deposition(RPECVD) with a gas mixture of $Si_2H_6/SiF_4/H_2$. The silicon films deposited without and with $SiF_4$ were characterized using atomic force microscopy(AFM), transmission electron microscopy(TEM) and X-ray diffraction(XRD). Both silicon films have the same rugged surface morphology, but, the silicon film deposited with $SiF_4$ exhibits more rugged. The silicon film deposited without $SiF_4$ is amorphous, whereas the silicon film deposited with $SiF_4$ is polycrystalline with very small needle-like grains which are perpendicular to the substrate and uniformly distributed in the thickness of the film. The silicon film deposited with $SiF_4$ was found to have a preferred orientation along the growth direction with the<110> of the film parallel to the <111> of the substrate. The effect of $SiF_4$ during RPECVD was discussed.

• Resources Recycling
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• v.18 no.4
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• pp.62-69
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• 2009

We researched separation of mixed waste acids with HF, $CH_3COOH$, $HNO_3$ that were produced during a semiconductor wafer process to recycle these acids. At first, we manufactured the fluoride compound in form of $Na_2SiF_6$ by precipitating HF using $NaNO_3$ and Si powder. The concentration of HF was reduced from the initial concentration of 127 g/L to 0.5 g/L with an HF recovery ratio of 99.5%. After the manufacture of $Na_2SiF_6$, the concentration of $HNO_3$ and $CH_3COOH$ demonstrated 502 g/L and 117 g/L respectively. Following these findings we added NaOH in this $CH_3COOH/HNO_3$ mixed acid in order to obtain pH=4. Next we separated the $CH_3COOH$ and recoverd it through the use of vaccum evaporation at -440 mmHg, $95^{\circ}C$. The concentration of the recovered $CH_3COOH$ was approximately 15% and the recovery ratio of $CH_3COOH$ was over 85%. We precipitated the $NaNO_3$ by cooling the concentrated solution to $20^{\circ}C$ with a $HNO_3$ recovery ratio of over 93%. We confirmed that only $Na_2SiF_6$ and $NaNO_3$ were manufactured by XRD analysis after drying these precipitants at $90^{\circ}C$. The precipitants demonstrated a purity of approximately 97% and 98% respectively. Therefore, the purity of the precipitants proved to be similar to that of commercial products.