Low-Voltage, Room temperature Fabricated ZnO Thin Film Transistor using High-K $(Bi_{1.5}Zn_{1.0}Nb_{1.5}O_7)_{0.7}(MgO)_{0.3}$ Gate Insulator
(고유전 $(Bi_{1.5}Zn_{1.0}Nb_{1.5}O_7)_{0.7}(MgO)_{0.3}$ 게이트 절연막을 이용한 저전압 구동 상온공정 ZnO 박막트랜지스터)
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- Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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- 2007.11a
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- pp.96-96
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- 2007