• Proceedings of the KIEE Conference
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• 1997.07e
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• pp.1752-1754
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• 1997

The Kaufman type ion beam source with focusing lens was prepared to measure $\gamma$-coefficient of MgO thin film. Initial discharge of the system was started with the discharge voltage of 25V, the cathode filament current of 5.5A at the constant magnetic field of 150G. The system shows the maximum ion current density of $120{\mu}A/cm^2$, energy dispersion of 200eV and beam divergence of $30^{\circ}$ under the condition of Ar gas pressure $2.5{\times}10^{-4}Torr$, the beam voltage of 500V, the discharge voltage of 90V, the accelerator voltage of -200V and the cathode filament current of 6.1A. When the focusing lens was installed onto the ion beam source, the spreadness diameter of ion beam was about 10mm.

• Journal of the Korean Vacuum Society
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• v.5 no.3
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• pp.251-257
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• 1996

The present paper represents the results of development and first experimental tests of a new ionized cluster beam (ICB) source. The novelty of ICB source lies in the fact that the crucible and ionization parts are spaced in one cylindrical shell but are not divided in an electric circuit. The ICB source adapts permanent magnets to increase the ionization efficiency. The maximum obtained $Cu^+$ ion current denisity is $1.5{\mu}A/\textrm{cm}^2$, therewith the ionization rate amounts 3% under deposition rate is 0.2$\AA$/s and the acceleration voltage is 4 kV, the $Cu^+$ ion beam uniformity is better than 95%.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2008.06a
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• pp.409-410
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• 2008

• Journal of the Korean Vacuum Society
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• v.4 no.S2
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• pp.106-114
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• 1995

Direct implantation of metallic ion species has been employed in surface processing of industrial components and tools with very encouraging improvements in recent years. In spite of high technicla effectiveness, this new surface processing technique has not been extensively accepted by industries mainly because of high cost(capital and operating) compared with other competitive surface processing techniques. High current and large implantation area with eliminating the mass analyzer and the beam-scanning unit make metal vapor vacuum are(MEVVA)source ion implantation versatile, simple and cheap to operate and well suited to commercial surface processing. In this paper, the recent development of MEVVA source ion implantation technique ar Beijing Normal University has been reviewed and the results of production trials of several industrial components and tools implanted by MEVVA source ion implantation have been presented and discussed.

• Progress in Superconductivity and Cryogenics
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• v.18 no.2
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• pp.37-41
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• 2016

This paper presents the developed quench analysis code and protection circuit design for a superconducting magnet system of 28GHz electron cyclotron resonance (ECR) ion source. The superconducting magnet is composed of a hexapole magnet and four solenoid magnets located outside of the hexapole one. All magnets are wound with NbTi composite wire and impregnated by epoxy. By using the developed characteristic analysis code, the normal zone resistance, decaying current and temperature rising can be estimated during quench. Also, the stored magnetic energy is successfully consumed from the series resistor of the designed protection circuit. The analytical results are compared with the experimental results to verify the developed quench analysis code and protection circuit.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.9 no.1
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• pp.106-113
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• 2010

The most suitable condition for plasma source ion implantation(PSII) was found based on the study of the characteristics of PSIIed tool and machined surfaces. The depth analysis according to the chemical bonding state of elements and surface component elements through the XPS and SIMS, was conducted to find the improved property of the PSIIed surface. Due to the diffusion of PSII, the nitrogen was found up to a depth of about 150nm according to the supplied voltage and ion implanted time. The deep diffusion by nitrogen caused the surface modification, but the formation of oxide component was found due to the residual gas contamination on the surface. Statistical method of ANOVA was conducted to find the effects of spindle speed and feed rate in interaction for machined surface roughness with PSIIed tools. The surface modification was found largely occurred by the nitrogen implanted surface with 2 hours for 27kV, 35kV and 43kV.

• Korean Journal of Materials Research
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• v.17 no.10
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• pp.509-515
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• 2007

In order to fabricate adhesiveless 2-layer flexible copper clad laminate (FCCL) used for COF (chip on film) with high peel strength, polyimide (PI; Kapton-EN, $38\;{\mu}m$) surface was modified by reactive $O_2^+$ and $N_2O^+$ ion beam irradiation. 300 mm-long linear electron-Hall drift ion source was used for ion irradiation with ion current density (J) higher than $0.5\;mA/cm^2$ and energy lower than 200 eV. By vacuum web coating process, PI surface was modified by linear ion source and then 10-20 nm thick Ni-Cr and 200 nm thick Cu film were in-situ sputtered as a tie layer and seed layer, respectively. Above this sputtered layer, another $8-9{\mu}m$ thick Cu layer was grown by electroplating and subsequently acid and base resistance and thermal stability were tested for examining the change of peel strength. Peel strength for the FCCLs treated by both $O_2^+$ and $N_2O^+$ ion irradiation showed similar magnitudes and increased as the thickness of tie layer increased. FCCL with Cu (200 nm)/Ni-Cr (20 nm)/PI structure irradiated with $N_2O^+$ at $1{\times}10^{16}/cm^2$ ion fluence was proved to have a strong peel strength of 0.73 kgf/cm for as-received and 0.34 kgf/cm after thermal test.

• Proceedings of the Korea Contents Association Conference
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• 2007.11a
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• pp.865-868
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• 2007

This research is the method that develops the efficient Source Head and the performance of Ion Implanter. Source Head is used during 20 days because Source Head's life time is different from the life time of most components. Components which is replaced to remake the Source Head is very expensive, and moreover, the above of 50% is used with one time. In this research, as we applied the influx method of the atom in aerial distributed method, obtained the effect which suppresses the portion which occurs with loss of thermion and is a possibility of lowering the pressure of the Arc. And then We it will be able to suppress be imbrued of the Chamber.

• Journal of Information Display
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• v.5 no.1
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• pp.1-6
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• 2004

Ion shower doping with a main ion source of $P_2H_x$ using a source gas mixture of $PH_3/H_2$ was conducted on excimer-laser- annealed (ELA) poly-Si. The crystallinity of the as-implanted samples was measured using a UV-transmittance. The measured value of as-implanted damage was found to correlate well with the one calculated through/obtained from TRIM-code simulation. The sheet resistance was found to decrease as the acceleration voltage increased from 1 kV to 15 kV at a doping time of 1 min. However, it increases as the acceleration voltage increases under severe doping conditions. Uncured damage after furnace annealing is responsible for the rise in sheet resistance.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.240-240
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• 2011

The first neutral beam injector (NBI-1) has been developed for the Korea Superconducting Tokamak Advanced Research (KSTAR) tokamak. A first long pulse ion source (LPIS-1) has been installed on the NBI-1 for an auxiliary heating and current drive of KSTAR core plasmas. Performance of ion and neutral beam extractions in the LPIS-1 was investigated initially on the KSTAR NBI-1 system, prior to the neutral beam injection into the main plasmas. The ion source consists of a JAEA magnetic bucket plasma generator with multi-pole cusp fields and a set of KAERI prototype-III tetrode accelerators with circular apertures. The inner volume of plasma generator and accelerator column in the LPIS-1 is approximately 123 liters. Final design requirements for the ion source were a 120 kV/ 65 A deuterium beam and a 300 s pulse length. The extraction of ion beams was initiated by the formation of arc plasmas in the LPIS-1, called as an arc-beam extraction method. A stable ion beam extraction of LPIS-1 has been achieved up to an 100 kV/42 A for a 4 s pulse length and an 80 kV/25 A for a 14 s pulse length. Optimum beam perveance of 1.21 microperv has been found at an accelerating voltage of 80 kV. Neutralization efficiency has been measured by using a water flow calorimetry (WFC) method of calorimeter and an operation of bending magnet. The full-energy species of ion beams have been detected by using the diagnostic method of optical multichannel analyzer (OMA). An arc efficiency of the LPIS was 0.6~1.1 A/kW depending on the operating conditions of arc discharge.