• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.11
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• pp.1025-1028
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• 2006

Dense $0.95(Na_{0.5}K_{0.5})NbO_3-0.05LiTaO_3$ (NKN-5LT) ceramics were developed by conventional sintering process. Sintering temperature was lowered by adding $Na_2CO_3$ as a sintering aid. The electrical properties of NKN-5LT ceramics were investigated as a function of $Na_2CO_3$ concentration. When the sample sintered at $1000^{\circ}C$ for 4 h with the addition of 1 mol% $Na_2CO_3$, electro-mechanical coupling factor $(k_p)$ and piezoelectric coefficient $(d_{33})$ of NKN-5LT ceramics were found to reach the highest values of 0.43 and 190 pC/N, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.11
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• pp.806-809
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• 2013

In this study, $(Na_{0.525}K_{0.443}Li_{0.037})(Nb_{0.883}Sb_{0.08}Ta_{0.037})O_3+0.10\;wt%Bi_2O_3+0.35\;wt%B_2O_3$ ceramics were prepared by conventional soild-state sintering process. The specimens were sintered at temperature range from $1,060^{\circ}C$ to $1,100^{\circ}C$. XRD (X-ray diffractron), SEM (scanning electron microscope) were used to analyze the crystal structure and microstructural sproperties of specimens. And also, $T_{O-T}$, TC were observed by the mesurement of temperature dependence of dielectric constant. Excellect physical properties of the piezoelectric constant $d_{33}$= 170 pC/N, electromechanical coupling factor kp= 0.312, Tc= $315^{\circ}C$ were obtained, respectively, from the specimen sintered at $1,080^{\circ}C$.

• Journal of the Korean Ceramic Society
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• v.35 no.10
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• pp.1040-1048
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• 1998

Ferroelectric properties of{{{{ { { { {SrBi }_{2 }Ta }_{2-x }Nb }_{x }O }_{9 } }} (SBIN) thin films were affected by the amount of Bi content in SBTN. The addition of Bi into the SBTN films could be accomplished by heat treating SBTN/Bi2O3/SBTN het-erostructures fabricated by r.f. magnetron sputtering method. The variation of Bi content was controlled by changing the thickness of the sandwiched Bi2O3 in SBTN/Bi2O3/SBTN heterostructure from 50 to 400$\AA$. As changing the thickness of the sandwiched Bi2O3 in Bi2O3 films was increased from 0 to 100$\AA$ the grain grew faster and the ferroelectric pro-perties were improved. On the other hand when the thickness of Bi2O3 films was thicker than 150$\AA$ the fer-roelectric properties were deteriorated Especially for SBTN thin films inserted by 400$\AA$ Bi2O3 layer a Bi2Phase appeared as a second phase resulting in poor ferroelectric properties. The maximum remanent po-larization (2Pr) and coercive field(Ec) were obtained for the SBTN/Bi2O3/(100$\AA$)/SBTN thin films. In this case 2Pr and Ec were 14.75 $\mu$C/cm2 and 53.4kV/cm at an applied voltage of 3V respectively.

• Journal of Ceramic Processing Research
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• v.20 no.6
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• pp.603-608
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• 2019

In this study, the multilayered thin films of (Ba,Sr)TiO3/K(Ta,Nb)O3 were fabricated by the sol-gel and spin coating methods, and their structural and electrical properties were investigated. The specimen showed polycrystalline X-ray diffraction (XRD) characteristics with a tetragonal structure. The average grain size and film thickness for one coating were about 30~40nm and 60nm, respectively. The phase transition temperature of specimen was lower than 10 ℃. The dielectric constant and loss at 20 ℃ of the specimen coated six times were 1,231 and 0.69, respectively. The rate of change in dielectric constant at an applied direct current (DC) voltage of the six times coated thin films was 17.3%/V. The electrocaloric effect was the highest around the temperature at which the remanent polarization rapidly changed. When an electric field of 660kV/cm was applied to the triply coated thin films, the highest electrocaloric property of 4.41 ℃ was observed.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.3
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• pp.159-163
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• 2016

In this paper, in order to develop optimum composition ceramics with excellent piezoelectric properties, $(Na_{0.525}K_{0.443}Li_{0.037})(Nb_{0.823}Sb_{0.08}Ta_{0.037})O_3+0.3wt%Bi_2O_3+0.4wt%Fe_2O_3$ lead-free piezoelectric ceramics were synthesized by conventional soild-state method. The calcination temperature of columbite precursors were fabricated at temperature range from $950^{\circ}C$ to $1,150^{\circ}C$ and sintering aids with low melting point were added to densify these ceramics. Effect of calcination temperature on dielectric and piezoelectric properties of ceramics were investigated. the ceramics with B-site columbite precursors at temperature of $1,100^{\circ}C$ obtained the optimal values of $d_{33}=272$ [pC/N], $k_p=0.51$, $Q_m=102$, ${\varepsilon}_r=978$.

• Proceedings of the KIEE Conference
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• 1998.07d
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• pp.1453-1455
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• 1998

$Ba(Mg,Ta)O_3-Ba(Co,Nb)O_3$ ceramics were prepared by the conventional mixed oxide method. The ceramics were sintered at the temperature of 1500-$1575^{\circ}C$ for 5[hr.] in air. The crystal structure was investigated by the XRD. The microstructure of the ceramics were observed by SEM. The microwave properties of dielectric resonators were investigated as a function of composition and sintering temperature. $Ba(Mg,Ta)O_3-Ba(Co,Nb)O_3$ ceramics have a structure of complex perovskite type, and have peaks of (101),(102),(201),(202) and (212). In the case of the $0.7Ba(Mg,Ta)O_3-0.3Ba(Co,Nb)O_3$ ceramic resonator, dielectric constant, quality factor and temperature coefficient of resonant frequency(TCRF, ${\tau}_l$) were a good value of 26.5, 11.500 at 10[GHz] and -1.3[ppm/$^{\circ}C$] from $25^{\circ}C$ to $60^{\circ}C$, respectively.

• Journal of the Korean Chemical Society
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• v.29 no.3
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• pp.265-270
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• 1985

Ta$_2$O$_5$, Nb$_2$O$_5$, SnO$_2$ and ZrO$_2$ in tin-slag samples were determined by X-ray fluorescence spectrometry using the dilution parameter method and the analytical results were compared with the data obtained by standard calibration curve method. Tin-slag samples and one standard sample having very similar composition to the tin-slags were diluted with a proper diluent (La$_2$O$_3$) to the ratio of 1: 1, 1 : 2, 1 : 3 and 1 : 4. After measuring the X-ray intensities of original and diluted samples, the values of dilution parameters were calculated by using the dilution parameter equation. Without any calibration curve, the analytical results were calculated from the equation including the dilution parameter term. The results were in good agreement with the reference data by the standard calibration curve method.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.9
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• pp.702-710
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• 2012

Eco-friendly $(Na,K)NbO_3$ (NKN)-based piezoelectric ceramic materials were fabricated by conventional ceramic method for shear mode piezoelectric energy harvesting application. $NKN-LiTaO_3$ (LT) based compositions were adopted for the high $d_{15}{\times}g_{15}$ which is proportional to harvested energy density. The composition $0.935(Na_{0.535}K_{0.485})NbO_3-0.065LiTaO_3$ was found to be lie on the boundary of tetragonal and orthorhombic phases. With reducing Ta content, the dielectric constant decreased gradually while maintaining high $d_{15}$, which resulted in increased $d_{15}{\times}g_{15}$. The composition $0.935(Na_{0.535}K_{0.485})NbO_3-0.065Li(Nb_{0.990}Ta_{0.010})O_3$ was found to possess excellent piezoelectric and electromechanical properties ($d_{15}{\times}g_{15}=29\;pm^2/N$, $d_{15}$ = 417 pC/N, $k_{15}$ = 0.55), and high curie temperature ($T_c=455^{\circ}C$).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.221-224
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• 2000

The microwave dielectric properties of Ba(Mg$_{1}$3/Ta$_{2}$3/)O$_3$-xBa(Co$_{1}$3/Nb$_{2}$3/)O$_3$[BMT-BCN] ceramics were investigated. The specimens were prepared by the conventional mixed oxide method. It was found that Ba(Mg$_{1}$3/Ta$_{2}$3/)O$_3$ and Ba(Co$_{1}$3/Nb$_{2}$3/)O$_3$ formed a solid solution with complex perovskite structure. Increasing the BCN content, dielectric constant was increased, but temperature coefficient of resonant frequency was decreased. In the range of x$\geq$0.4, dielectric constant was about 30. 0.55BMT-0.45BCN ceramics showed excellent microwave dielectric properties with $\varepsilon$$_{r}$=30.84, Q$\times$f$_{0}$=75,325[GHz] and $\tau$$_{f}$=-2.9015[ppm/$^{\circ}C$].X>].

• Proceedings of the IEEK Conference
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• 2006.06a
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• pp.985-986
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• 2006

The epitaxial $KTa_{0.524}Nb_{0.446}Ti_{0.03}O_3$ films with 3% Ti were investigated. Titanium (+4) substitution on the Nb/Ta site should reduce dielectric losses of KTN: Ti film by introducing an acceptor state. This acceptor state traps electrons due to oxygen vacancies that form during oxide film growth. KTN:Ti films were grown using pulsed laser deposition, and then annealed at different temperatures in oxygen ambient. The crystallinity, and surface morphology of KTN:Ti film were investigated using x-ray diffraction, and atomic force microscopy. The dielectric properties of Ti doped KTN films measured for unannealed and annealed films will be reported. Tunability and dielectric loss of as-deposited KTN:Ti film were determined to be 10% and 0.0134, respectively. For films annealed at $800^{\circ}C$ and $900^{\circ}C$, the dielectric loss decreased but with a decrease in tunability as well.