• The Korean Journal of Ceramics
• /
• v.6 no.1
• /
• pp.64-67
• /
• 2000

Reactively sputtered $Pb(Zr,Ti)O_3$(PZT) films on $IrO_2$and Ir were evaluated with particular consideration on interface properties. The $IrO_2$and Ir were previously annealed at $650^{\circ}C$ in $O_2$or $N_2$atmosphere, respectively. There was no appreciable roughening in the interface of the $PZT/IrO_2$respective to that of the PZT/Ir; the rms roughness of $IrO_2$and Ir was about 3nm and 10nm, respectively. The ferroelectric properties of the $PZT/IrO_2$were found to be better than that of the PZT/Ir; however, the leakage current of the $PZT/IrO_2$was slightly larger than that of the PZT/Ir. The $PZT/IrO_2$thin films did not exhibit any fatigue up to $10^{11}$ cycles; the $P^*\;_r-P^r$ value decreased only from 16.6 to 14$\mu$C/$\textrm{cm}^2$ until $10^{12}$ polarization reversals. On the other hand, although thin $IrO_2$layer was formed between PZT and Ir, the PZT/Ir thin films began to undergo fatigue after $10^9$ polarization reversals.

• Transactions of the Korean hydrogen and new energy society
• /
• v.27 no.5
• /
• pp.471-477
• /
• 2016

In this research, the Ir supported $TiO_2$ (P25) catalyst was prepared by precipitation method for oxygen evolution reaction. The $Ir/TiO_2$ catalyst was synthesised by reduction reaction using reducing agent. Physiochemical characterizations of synthesized $Ir/TiO_2$ catalyst was studied by means of SEM, EDS mapping, TEM and XRD. The Electrochemical characterizations were tested by using the technique of CV and LSV by RDE and Potentiostat. Physicochemical properties were characterized with XRD where Iridium metal morphology and Ir(111) and Ir(222) peaks were founded. $Ir0.2Ru0.8O_2$ exhibited higher OER activity than $Ir0.5Ru0.5O_2$ followed by $Ir/TiO_2$ and $IrO_2$.

• Journal of Environmental Science International
• /
• v.29 no.10
• /
• pp.943-949
• /
• 2020

In this work, we prepared a heterojunction anode with a surface layer of SnO₂-Sb-Ni (SSN) on a Ti/IrO₂ electrode by thermal decomposition to improve the electrochemical activity of the Ti/IrO₂ electrode. The Ti/IrO₂-SSN electrode showed significantly improved electrochemical activity compared with Ti/IrO₂. For the 0.1 M NaCl and 0.1 M Na₂SO₄ electrolytes, the onset potential of the Ti/IrO₂-SSN electrode shifted in the positive direction by 0.1 V_SCE and 0.4 V_SCE, respectively. In 2.0-2.5 V voltages, the concentration in Ti/IrO₂-SSN was 2.59-214.6 mg/L Cl₂, and Ti/IrO₂ was 0.55-49.21 mg/L Cl₂. Moreover, the generation of the reactive chlorine species and degradation of Eosin-Y increased by 3.79-7.60 times and 1.06-2.15 times compared with that of Ti/IrO₂. Among these voltages, the generation of the reactive chlorine species and degradation of Eosin-Y were the most improved at 2.25 V. Accordingly, in the Ti/IrO₂-SSN electrode, it can be assumed that the competitive reaction between chlorine ion oxidation and water oxidation is minimized at an applied voltage of 2.25V.

• Proceedings of the Korean Ceranic Society Conference
• /
• 2000.04a
• /
• pp.154.1-154.1
• /
• 2000

• Proceedings of the Korean Institute of Surface Engineering Conference
• /
• 2016.11a
• /
• pp.191.2-191.2
• /
• 2016

$TiO_2$는 우수한 화학적 및 물리적 안정성 때문에 수전해 장기간 사용에 적합한 전기화학 전극으로 여겨진다. 큰 표면적을 갖는 $TiO_2$를 제조하기 위한 수많은 방법 중 양극산화(anodization)는 비교적 간단하고 저렴한 공정으로 인하여 매우 실용적인 방법으로서 알려져 있다. 특히, 고도로 정렬 된 $TiO_2$ 나노튜브($TiO_2$ NTs) 의 경우에는 분말상과 달리 전극제조를 위해 추가적인 접착제를 필요하지 않다. 그러나, $TiO_2$는 일반적으로 절연 특성을 나타내기 때문에 전극의 활용을 위해서는 본질적으로 촉매의 사용이 불가피하다. 다수의 전기 촉매 중, $IrO_2$와 $RuO_2$는 수전해 분야에 잘 알려진 산화 촉매이다. 그럼에도 불구하고, 특유의 높은 종횡비 때문에 $TiO_2$ 나노튜브에 전기 촉매를 균일하게 도핑하는 것은 많은 어려움이 따른다. 이를 해결하기 위한 방법으로 $RuO_2$를 도핑하기 위한 단일공정 $TiO_2$ 양극산화 기술이 보고된 바 있다. 본 연구에서는 2원 촉매($IrO_2$ 및 $RuO_2$)를 $TiO_2$ 나노튜브에 도핑하기 위한 단일공정 양극산화 기술에 대하여 연구하였다. 전구물질로써 $KRuO_4$($RuO_2$ 전구체)와 IrOx 나노입자(IrOx NPs, $IrO_2$ 전구체)를 사용하였다. 특히, IrOx를 나노 입자는 $IrCl_3$로부터 중간 매체로 합성된다. IrOx는 단일공정 양극산화 중에 $TiO_2$ 나노튜브 상에 도핑 가능한 이온 형태인 $IrO_4$-로 전환될 수 있다. 제조된 시료는 열처리 후 바로 전극으로 사용되었으며 SEM, XPS, TEM, ICP-OES 등으로 정성, 정량 분석을 수행하였다. LSV와 EIS를 통해 전기화학적 성능 평가가 이루어졌으며, LSV를 통해 포집한 기체는 가스 크로마토그래피를 사용하여 정량분석한 후 그 효율을 측정하였다.

• Journal of the Korean Ceramic Society
• /
• v.37 no.3
• /
• pp.233-239
• /
• 2000

Sr0.9Bi2+xTa2O9(x=0, 0.1, 0.2, 0.3) thin films on IrO2/SiO2/Si or Pt/Ti/SiO2/Si substrate were prepared by spin coating method using SBT stock solutions synthesized by MOD process. SBT thin films on IrO2 transformed to layered perovskite phase at $700^{\circ}C$, but showed low breakdown voltage due to their porous microstructure. The smaple of Sr0.9Bi2+xTa2O9 composition showed the best dielectric and electrical properties. When the sample of the same composition was annealed at 80$0^{\circ}C$, the dielectric and electric properties were improved due to the grian growth and dense surface. the remanent polarization values(2Pr) at $\pm$3 V for IrO2 and Pt electrodes were 10.5, 7.15$\mu$C/$\textrm{cm}^2$, respectively. The SBT thin film with IrO2 electrode showed the lower coercive field. The leakage current density and breakdown voltage of SBT thin films on IrO2 were higher than those on Pt.

• Journal of the Korean Chemical Society
• /
• v.27 no.5
• /
• pp.340-344
• /
• 1983

It has been found that both of the iridium (Ⅰ) complexes, Ir$(ClO_4$)(AN)(CO)$(Ph_3P)_2$(AN = $CH_2$CHCN, $Ph_3P = (C_6H_5)_3$P) and [Ir(AN)(CO)$(Ph_3P)_2]ClO_4$, react with $Cl^-$ to give IrCl(AN)(CO)$(Ph_3P)_2$, and [Ir(AN)(CO)$(Ph_3P)_2]ClO_4$ dissociates AN to yield Ir$(ClO_4)(CO)(Ph_3P)_2$ in the absence of excess AN added, and Ir$(ClO_4)(CO)(Ph_3P)_2$ reacts with $Cl^-$ to produce IrCl(CO)$(Ph_3P)_2$. It is suggested that the catalytic polymerization of AN with Ir$(ClO_4)(AN)(CO)(Ph_3P)_2$ proceeds through the formation of [(CO)(Ph_3P)_2$Ir(-CH=CHCN)(H)($CH_2$=CHCN)]Cl$O_4$ followed by the formation of iridium(alkyl)(alkenyl) type complex which undergoes a reductive elimination to produce the polymer of acrylonitrile.

• Journal of the Korean Ceramic Society
• /
• v.38 no.1
• /
• pp.39-44
• /
• 2001

솔-젤법으로 S $r_{0.9}$B $i_{2.1}$T $a_2$$O_{9}$ stock solution을 합성하고, Ir $O_2$/ $SiO_2$/Si 및 기판 위에 스핀코팅법으로 약 2000$\AA$ 정도의 두께를 가지고 SBT 박막을 제조하였다. Pt/Ti $O_{x}$ 전극을 사용한 SBT 박막과 비교하였을 때 Ir $O_2$전극을 사용한 SBT 박막의 경우 더 낮은 급속 열처리 온도 즉, 72$0^{\circ}C$에서 형석상에서 층상 페롭스카이트 상으로의 상전이가 관찰되었다. 그리고, Ir $O_2$전극을 사용한 SBT 박막은 낮은 열처리에서 결정성장이 이루어졌다. Ir $O_2$전극을 사용한 SBT 박막은 $650^{\circ}C$에서 열처리하였을 때 포화된 이력곡선을 얻었지만, Pt/Ti $O_{x}$ 전극을 사용한 SBT 박막은 $700^{\circ}C$에서 열처리하였을 때 이력곡선이 관찰되었다. Ir $O_2$전극을 사용한 SBT 박막은 $700^{\circ}C$의 열처리에서 8.79 $\mu$C/$ extrm{cm}^2$ (3V)의 2Pr 값을 나타내었다.나타내었다.다.

• Korean Journal of Materials Research
• /
• v.11 no.2
• /
• pp.151-154
• /
• 2001

The leakage current behaviors of PLZT capacitors with top electrodes of Pt, Ir, and $IrO_2$ are investigated before and after hydrogen forming gas anneal. The P-E hysteresis and fatigue properties of Pt/PLZT/Pt capacitors are almost recovered after recovery anneal in $O_2$ ambient. The leakage current mechanisms of PLZT capacitors with Pt and $IrO_2$ top electrodes are consistent with space-charge influenced injection model showing the strong time dependence irrespective of annealing conditions. On the other hand, the leakage current behavior of Ir/PLZT/Pt capacitor shows steady state independent of time because IrPb, conducting phase, formed at interface between Ir top and PLZT is a high conduction path. Teh leakage current mechanism of Ir/PLZT/Pt capacitor is consistent with Schottky barrier model.

• Bulletin of the Korean Chemical Society
• /
• v.7 no.5
• /
• pp.338-341
• /
• 1986

Hydrocarbon solution of $Ir(PPh_3)_2(CO)OClO_3$ reacts with $Ph_2PC_6H_4$-o-CHO and 3-methyl-2-aminopyridinyl aldimine to yield ${\bar{Ir(Ph_2PC_6H_4-o-CO)}}\;(PPh_3)_2(CO)(H)ClO_4$(1) and ${\bar{Ir(NC_6H_6NC}}C_6H_5)(PPh_3)_2(CO)(H)ClO_4$(2), respectively. The compound $Ir(PPh_3)_2N_2Cl$ also reacts with $Ph_2PC_6H_4$-o-CHO and 3-methyl-2-aminopyridinyl aldimine to give ${\bar{Ir(Ph_2PC_6H_4-o-C}}O)(PPh_3)_2(H)Cl(3)$ and $Ir(NC_6H_5NCC_6H_5(PPh_3)_2(H)Cl(4)$, respectively. Compounds 1, 2, 3, and 4 were characterized by infrared, $^1H$ NMR, $^{31}p$ NMR, UV spectra, and conductivity measurements.