• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.229.2-229.2
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• 2016

본 연구에서는 Host와 Dopant $Ir(ppy)_3$의 도핑 위치 변화에 따른 bottom emission 인광 OLED를 제작하여 발광 효율 및 특성을 분석하였다. 소자의 EML은 $Ir(ppy)_3/CBP$와 $CBP/Ir(ppy)_3$ 순으로 증착하여 제작하였다. $Ir(ppy)_3/CBP$은 낮은 구동 전압에서 큰 전류밀도와 큰 luminance을 측정하였고, 반대로 $CBP/Ir(ppy)_3$은 높은 구동 전압에서 $CBP/Ir(ppy)_3$은 큰 전류밀도와 큰 luminance가 측정되었다. 이는 $Ir(ppy)_3/CBP$에서 HTL과 EML 사이에 hole direct injection이 발생으로 Hole이 증가하지만 charge balance 불일치로 roll-off가 발생하고, $CBP/Ir(ppy)_3$에서 electron direct injection에 의한 electron 증가로 charge balance가 향상된다. EL spectrum 측정에서 $Ir(ppy)_3$은 파장 512nm 발광이 일어나고, CBP와 NPB은 각각 파장 380nm, 433nm로 분석된다. 각 물질의 triplet의 전달은 energy level이 큰 곳에서 작은 곳으로 전달되는데 이러한 이유로 전압에 따른 recombination zone 변화로 각 물질에서 나오는 파장의 intensity가 달라지는 것을 확인하였다. $Ir(ppy)_3/CBP$은 낮은 전류 밀도에서는 CBP의 영향으로 380nm 파장대가 크고, 높은 전류 밀도에서는 $Ir(ppy)_3$의 영향으로 512nm 파장대가 크게 나오는 것을 확인했고, $CBP/Ir(ppy)_3$에서는 낮은 전류 밀도에서 512nm 파장대가 커지고, 큰 전류 밀도에서는 CBP에서 NPB로의 triplet 에너지 전달의 증가로 433nm 파장대가 커지는 것을 확인하였다.

• Journal of the Korean Applied Science and Technology
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• v.20 no.2
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• pp.125-129
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• 2003

The effects of molecular structure on the redox properties of the organic electroluminescent materials (Ir$(ppy)_3$ Ir$(m-ppy)_3$ Ir$(p-toly)_3$) were studied using cyclic voltammetry and spectroscopy. These iridium complexes show reversible oxidation and reduction on the electrode, which produce the symmetric cyclic voltammogram. It indicates that these materials are very stable under repetitive oxidation/reduction cycles. The electrochemically determined ionization potentia/electron affinity values are 5.4OeV/3.02eV for Ir$(ppy)_3$, 5.36eV/2.96eV for Ir$(m-ppy)_3$, and 5.35eV/2.97eV for Ir$(p-toly)_3$ from the SCE(Standard Calomel Electrode). The electrically determined band gaps are 2.38eV (521nm), Ir$(ppy)_3$, 2.4OeV (517nm), Ir$(m-ppy)_3$, and 2.38eV (521nm). Ir$(p-toly)_3$, which are similar with the optical band gaps. The position of methyl group on 2-phenylpyridine (ppy) effects do not influence much on the ionization potential, electron affinity, and band gap of Ir$(ppy)_3$ derivatives.

• Journal of the Microelectronics and Packaging Society
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• v.18 no.4
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• pp.79-83
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• 2011

White phosphorescence polymer light emitting diodes (WPhPLEDs) with a glass/ITO/PEDOT:PSS/PFO:$Ir(ppy)_3$:MDMO-PPV/TPBI/LiF/Al structure were fabricated to investigate the effects of $Ir(ppy)_3$ doping concentrations on the optical and electrical properties of the devices. PFO, $Ir(ppy)_3$ and MDMO-PPV conjugated polymers as host and guest materials in the emission layer were spin coated at various concentrations of $Ir(ppy)_3$ ranging from 0.0 to 20.0 vol.%. As the concentration of $Ir(ppy)_3$ increased from 5.0 to 20.0 vol.%, the luminance and current efficiency values of the devices decreased clearly, which are attributable to the quenching effect at a high doping concentration. The maximum luminance and current density were 2850 $cd/m^2$ and 741 $mA/cm^2$, respectively for a WPhPLED with an $Ir(ppy)_3$ concentration of 5.0 vol.%. The CIE color coordinates were about x=0.33 and y=0.34 at 11V, showing a good white color.

• Korean Journal of Materials Research
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• v.18 no.4
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• pp.199-203
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• 2008

High-efficiency phosphorescent organic light emitting diodes using TCTA-TAZ as a double host and $Ir(ppy)_3$ as a dopant were fabricated and their electro-luminescence properties were evaluated. The fabricated devices have the multi-layered organic structure of 2-TNATA/NPB/(TCTA-TAZ) : $Ir(ppy)_3$/BCP/SFC137 between an anode of ITO and a cathode of LiF/AL. In the device structure, 2-TNATA[4,4',4"-tris(2-naphthylphenyl-phenylamino)-triphenylamine] and NPB[N,N'-bis(1-naphthyl)-N,N'-diphenyl-1,1'-biphenyl-4,4'-diamine] were used as a hole injection layer and a hole transport layer, respectively. BCP [2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline] was introduced as a hole blocking layer and an electron transport layer, respectively. TCTA [4,4',4"-tris(N-carbazolyl)-triphenylamine] and TAZ [3-phenyl-4-(1-naphthyl)-5-phenyl-1,2,4-triazole] were sequentially deposited, forming a double host doped with $Ir(ppy)_3$ in the [TCTA-TAZ] : $Ir(ppy)_3$ region. Among devices with different thickness combinations of TCTA ($50\;{\AA}-200\;{\AA}$) and TAZ ($100\;{\AA}-250\;{\AA}$) within the confines of the total host thickness of $300\;{\AA}$ and an $Ir(ppy)_3$-doping concentration of 7%, the best electroluminescence characteristics were obtained in a device with $100\;{\AA}$-think TCTA and $200\;{\AA}$-thick TAZ. The $Ir(ppy)_3$ concentration in the doping range of 4%-10% in devices with an emissive layer of [TCTA ($100\;{\AA}$)-TAZ ($200\;{\AA}$)] : $Ir(ppy)_3$ gave rise to little difference in the luminance and current efficiency.

• Proceedings of the KAIS Fall Conference
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• 2008.11a
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• pp.201-203
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• 2008

ITO 투명전극을 양극으로 사용하고 PEDOT:PSS 고분자 물질위에 PVK와 Ir(ppy)3를 각각 host와 dopant로 사용하여 고분자 발광다이오드를 제작하였다. 전자 수송층의 역할로 TPBI, 음극으로 Al을 증착하여 최종적으로 ITO/PEDOT:PSS/PVK:Ir(ppy)3/TPBI/LiF/Al 구조를 갖는 녹색 인광 고분자 유기발광소자(PhPLED)를 제작하였다. 제작 된 소자의 발광부 dopant인 Ir(ppy)3도핑 농도에 따른 전기적 광학적 특성을 평가하였다. PVK:Ir(ppy)3를 host와 dopant system으로 dopant Ir(ppy)3의 도핑 양을 0.5 wt%에서2.5 wt%까지 씩 변화시키면서 최적의 농도를 찾고자 하였다. TPBI를 전자 수송층으로 사용 하였을 경우 최대 휘도는 약 8600 cd/$m^2$ (at 8V)이고, 전류밀도는 337mA/$cm^2$ 를 나타내었다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.178-181
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• 2001

The organic light-emitting devices (OLEDs) based on fluorescence have low efficiencies due to the requirement of spin-symmetry conservation. By using the phosphorescent material, the internal quantum efficiency can reach 100 %, compared to 25 % in the case of the fluorescent material. Thus, the phosphorescent OLEDs have recently been extensively studied and showed higher internal quantum efficiencies then the conventional OLEDs. In this study, we investigated the characteristics of the phosphorescent OLEDs, with the green emitting phosphor, Ir(ppy)$_3$ (tris(2-phenylpyridine)iridium). The devices with a structure of ITO/TPD/Ir(PPy)$_3$ doped in the host material/BCP/Alq$_3$/Li:Al/Al were fabricated, and its electrical and optical characteristics were studied. By changing the doping concentration of Ir(PPy)$_3$ and the host materials, we fabricated several devices and investigated the device characteristics.

• 한국정보디스플레이학회:학술대회논문집
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• 2002.08a
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• pp.98-101
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• 2002

The effect of morphology on energy transfer and device performance in phosphorescent dye doped polymer light emitting diodes is reported. We selected two host polymers (PVK and PFHP) which have nearly the same potential for the energy transfer to Ir(ppy)$_3$. The PFHP:Ir(ppy)$_3$ film showed b-micron size aggregation, whereas the PVK:Ir(ppy)$_3$ film showed homogeneous and smooth images. As a result, energy transfer is efficient with high emission efficiency in PVK:Ir(ppy)$_3$ whereas little energy transfer and low quantum efficiency are obtained in PFHP:Ir(ppy)$_3$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.04a
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• pp.33-35
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• 2008

We have fabricated and evaluated new high efficiency green light emitting phosphorescent devices with an emission layer of $[TCTA_{1/3}TAZ_{2/3}/TAZ]:Ir(ppy)_3$. The whole experimental devices have the basic structure of $2-TNATA(500 {\AA})/NPB(300{\AA})/EML(300{\AA})/BCP(50{\AA})/SFC137(500{\AA})$ between anode and cathode. We have also fabricated conventional phosphorescent devices with emission layers of $(TCTA_{1/3}TAZ_{2/3}):Ir(ppy)_3$ and $(TCTA/TAZ):Ir(ppy)_3$ and compared their electroluminescence characteristics with those of the device with an emission layer of $(TCTA/TCTA_{1/3}TAZ_{2/3}/TAZ):Ir(ppy)_3$. The current density(J), luminance(L), and current efficiency($\eta$) of the device with an emission layer of $(80{\AA}-TCTA/90{\AA}-TCTA_{1/3}TAZ_{2/3}/130{\AA}-TAZ):10%-Ir(ppy)_3$ were 95 $mA/cm^2$, 25000 $cd/m^2$, and 27 cd/A at an applied voltage of 10V, respectively. The maximum current efficiency was 52 cd/A under the luminance of 400 $cd/m^2$. The peak wavelength and FWHM(full width at half maximum) in the electroluminescence spectral were 513nm and 65nm, respectively. The color coordinate was (0.30, 0.62) on the CIE (Commission Internationale de l'Eclairage) chart. Under the luminance of 15000 $cd/m^2$, the current efficiency of the device with an emission layer of $(80{\AA}-TCTA/90{\AA}-TCTA_{1/3}TAZ_{2/3}/130{\AA}-TAZ):10%-Ir(ppy)_3$ was 34 cd/A, which has been improved 1.7 times and 1.4 limes compared to those of the devices with emission layers of $(300{\AA}-TCTA_{1/3}TAZ_{2/3}): 10%-Ir(ppy)_3$ and $(100{\AA}-TCTA/200{\AA}-TAZ):10%-Ir(ppy)_3$, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.276-277
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• 2006

본 연구에서는 인광 발광 물질인 host재료, CBP에 guest로 인광색소인 $Ir(ppy)_3$을 첨가하여 광학적, 전기적 특성을 보았다. $Ir(ppy)_3$ 색소를 서로 다른 중량비로 첨가할 때의 소자들의 특성을 평가하였다.$ Ir(pppy)_3$을 3.125%의 중량비로 하였을 때 가장 좋은 휘도특성을 보였다. 소자의 기본구조는 glass/ITO/${\alpha}-NPD(300{\AA})$/CBP:$Ir(ppy)_3(300{\AA})$/$BCP(80{\AA})$/$Alq_3(200{\AA})$)/$Al(1000{\AA})$로 하였다.

• Korean Journal of Materials Research
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• v.18 no.7
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• pp.347-351
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• 2008

We have fabricated and evaluated newNew high high-efficiency green green-light light-emitting phosphorescent devices with an emission layer of [$TCTA/TCTA_{1/3}TAZ_{2/3}/TAZ$] : $Ir(ppy)_3$ were fabricated and evaluated, and compared the electroluminescence characteristics of these devices were compared with the conventional phosphorescent devices with emission layers of ($TCTA_{1/3}TAZ_{2/3}$) : $Ir(ppy)_3$ and (TCTA/TAZ) : $Ir(ppy)_3$. The current density, luminance, and current efficiency of the a device with an emission layer of ($80{\AA}-TCTA/90^{\circ}{\AA}-TCTA_{1/3}TAZ_{2/3}/130{\AA}-TAZ$) : 10%-$Ir(ppy)_3$ were $95\;mA/cm^2$, $25000\;cd/m^2$, and 27 cd/A at an applied voltage of 10 V, respectively. The maximum current efficiency was 52 cd/A under the a luminance value of $400\;cd/m^2$. The peak wavelength and FWHM (FWHM (full width at half maximum) in the electroluminescence spectral were 513 nm and 65 nm, respectively. The color coordinate was (0.30, 0.62) on the CIE (Commission Internationale de I'Eclairage) chart. Under the a luminance of $15000\;cd/m^2$, the current efficiency of the a device with an emission layer of ($80{\AA}-TCTA/90{\AA}-TCTA_{1/3}TAZ_{2/3}/130{\AA}-TAZ$) : 10%-$Ir(ppy)_3$ was 34 cd/A, which has beenshowed an improvement of improved 1.7 and 1.4 times compared to those of the devices with emission layers of ($300{\AA}-TCTA_{1/3}TAZ_{2/3}$) : 10%-$Ir(ppy)_3$ and ($100{\AA}-TCTA/200{\AA}$-TAZ) : 10%-$Ir(ppy)_3$, respectively.