• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2017.05a
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• pp.164-164
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• 2017

해양환경 중 많이 사용되는 철강재료들은 그 가혹한 부식환경에 대응하기 위하여 일반적으로 피복 도장방식법이나 음극방식법이 적용되고 있다. 여기서 음극방식법은 선박 및 해양구조물의 해중부 부식에 대해 가장 효과적인 방식법으로 알려져 있다. 한편, 이와 같이 해수 중 철강재에 음극방식을 적용할 경우, 피방식체인 그 강재 표면에 해수 중 용존된 산소의 음극환원 반응이 일어나며 국부적인 알카리 표면 조건을 형성시켜 $Mg(OH)_2$와 $CaCO_3$의 막을 석출시킨다. 이와같이 음극방식 중 형성된 전착물은 방식해야 될 표면적을 감소시켜 방식전류밀도를 감소시키는 효과가 있는 것으로 보고되고 있다. 이렇게 석출된 전착물은 음극표면에 부분적으로 형성되고, 여러 가지 환경 조건 등의 영향을 받아 그 피막의 형성 정도도 가늠하기 어렵기 때문에 음극방식 설계 시 그 정도에 따른 영향을 고려-반영하기가 곤란하다. 또한 이 전착물은 그 형성 메커니즘에 관한 해석이나 강도, 균일한 밀착성, 장기적인 방식효과 및 효율성 등이 아직 충분히 입증되어 있지 않은 실정에 있다. 따라서 본 연구에서는 해수 중 다양한 전착 프로세스에 의해 제작된 전착물의 기간별, 도장코팅 종류별 특성변화를 분석 및 평가하고, 전착물에 의한 희생양극 소모전류 변화 측정 분석을 통해 전착막을 균일하고 치밀하게 형성시키기 위한 최적의 조건을 찾고자 하였다. 또한 석출속도, 밀착성 및 내식특성을 향상시키기 위해 해수 중 기체를 용해시켜 제작한 막의 특성을 분석-평가하였다. 본 연구에 사용된 강 기판은 일반구조용강(KS D 3503, SS400)으로 ${\varnothing}42.7{\times}1,000mm{\times}4.0t$의 형상으로 제작하였다. 인가된 전류밀도는 1, 3 및 $5A/m^2$이고 도장 코팅 종류별 전착 석출물의 형성차이 비교 분석을 위한 실험은 선박 및 해양구조물에 많이 사용되는 Universal Epoxy 도료 2종을 선정하여 진행하였다. 또한 Steel Wire Mesh의 영향을 알아보기 위해 Mesh를 설치하여 실험을 진행하였다. 기간별-도장 종류별 외관관찰, 전착물의 두께 측정, SEM, EDS 및 XRD를 통해 막의 모폴로지, 조성원소 및 결정구조를 분석하였으며, 전착물의 내식성과 내구성을 평가하기 위해 테이핑 테스트(Taping Test) 및 전기화학적 양극분극 시험을 실시하였다. 희생양극 소모율에 대한 전착물의 영향을 확인하기 위해 외부전원을 인가하여 전착 피막을 형성시킨 강 기판에 희생양극을 연결하여 희생양극 소모효율 측정 시험을 진행하였다. 전착물의 석출량은 시간 및 전류밀도의 증가에 따라 비례하여 증가하였으며, 음극전류 인가 시 금속과 용액 계면 사이의 확산층에서 발생한 $OH^-$ 이온으로 인해 금속과 용액 계면 사이 pH가 부분적으로 증가하여 $Mg(OH)_2$ 화합물이 많이 생성되는 것으로 확인되었다. 또한 Mesh의 부착으로 평활하지 않게 형성된 미세한 굴곡구조 및 표면적 증가로 인하여 단계적으로 피복되는데 필요한 시간이 지연되면서 $CaCO_3$에 비해 $Mg(OH)_2$ 화합물이 상대적으로 증가한 것으로 사료된다. $CaCO_3$(Aragonite) 구조는 견고한 피막으로 치밀하고 화학적 친화력이 높아 우수한 밀착성을 보였으며 전착물의 영향으로 양극 전류가 감소하였고, 이로인해 방식전류 절감효과를 얻을 수 있을 것으로 기대된다.

• Resources Recycling
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• v.24 no.1
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• pp.35-42
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• 2015

To obtain the fundamental information on the dissolution of nickel into the slag in the pyrometallurgical processes for treatment of wasted PCB, the distribution ratios of nickel between CaO-$SiO_2-Al_2O_3$-MgO slag and copper-5 wt%Ni alloy were measured at 1623 K to 1823 K under a controlled $CO_2$-CO atmosphere. The distribution ratio of Ni increased linearly with increasing oxygen partial pressure. Therefore, the dissolution reaction of nickel into the slags could be described by the following equation; $$Ni(l)_{metal}+\frac{1}{2}O_2(g)NiO(l)_{slag}$$ The distribution ratio of Ni increased linearly with increasing content of basic oxides(CaO and MgO) in slag. However, the distribution ratio of Ni decreased linearly with increasing temperature. From these results, the empirical equation of distribution ratio of Ni was obtained by the following equation from the analysis of experimental conditions by multiple regression. $${\log}L_{Ni}=0.4000{\log}P_{O2}-5.1{\times}10^{-4}T+0.3375\(\frac{X_{CaO}+X_{MgO}}{X_{SiO2}}\)$$

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.4 no.1
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• pp.11-20
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• 1994

GaAs and AlGaAs epi-layers were grown on semi-insulating (100) GaAs substrate by molecular beam epitaxy (MBE) and their electrical and optical properties have been investigated by several measurements. In undoped GaAs, the p-type GaAs layers with the good surface morphology were obtained under the growth conditions of the substrate temperatures ranging from 570 to $585^{\circ}C$ and the $As_4$/Ga ratios from 17 to 22. In the samples with the growth rates of the ranges of $0.9~1.1 {\mu}m/h$, the impurity concentrations were in the ranges of $1.5{\times}10^{14}~5.6{\times}10^{14}cm^{-3}$ with the Hall mobilities of $590~410cm^2/V-s$. In the Si-doped GaAs, the n-type GaAs layers with low electro trap, only two hole deep levels were observed with uniform doping profiles (<1%). AlGaAs layers with good surface morphology and crystallinity were grown under an optimum condition of the substrate temperature, $600^{\circ}C $. 8 deep level defects were observed between 0.17~0.85eV in undoped AlGaAs layers.

• Journal of Sensor Science and Technology
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• v.10 no.6
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• pp.328-337
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• 2001

The stochiometric mix of evaporating materials for the $CdGa_2Se_4$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, $CdGa_2Se_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were $630^{\circ}C$ and $420^{\circ}C$, respectively. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CdGa_2Se_4$ single crystal thin films measured from Hall effect by van der Pauw method are $8.27{\times}10^{17}cm^{-3}$, $345\;cm^2/V{\cdot}s$ at 293 K, respectively. From the photocurrent spectrum by illumination of perpendicular light on the c-axis of the $CuInSe_2$ single crystal thin film, we have found that the values of spin orbit splitting ${\Delta}So$ and the crystal field splitting ${\Delta}Cr$ were 106.5 meV and 418.9 meV at 10 K, respectively. From the photoluminescence measurement on $CdGa_2Se_4$ single crystal thin film, we observed free excition ($E_x$) existing only high quality crystal and neutral bound exiciton ($D^{\circ}$, X) having very strong peak intensity. Then, the full-width-at -half-maximum(FWHM) and binding energy of neutral donor bound excition were 8 meV and 13.7 meV, respectivity. By Haynes rule, an activation energy of impurity was 137 meV.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.18 no.9
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• pp.1064-1069
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• 2007

This paper proposes the highly miniaturized active $90^{\circ} power combiner for application to MMIC. Conventional passive $90^{\circ} power combiners can't be integrated on MMIC because of their very larger size. Therefore, the highly miniaturized $90^{\circ} power combiners are required for a development of highly integrated MMIC. For this paper, the highly miniaturized active $90^{\circ} power combiner employing InGaP/GaAs HBT was fabricated on GaAs substrate for application to highly integrated MMIC. A size of fabricated active $90^{\circ} power combiner was $2.42{\times}1.05$ mm, which was 2.2 % of conventional passive $90^{\circ} power combiner. The fabricated active $90^{\circ} power combiner showed a gain characteristic about 10 dB and a good phase-difference coupling characteristic of $-92.6^{\circ} than conventional passive $90^{\circ} power combiner at 2.4 GHz. The highly miniaturized active $90^{\circ} power combiner exhibited good RF performances comparable to conventional passive $90^{\circ} power combiners. This work is the first report of an active $90^{\circ} power combiner.

• Korean Journal of Materials Research
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• v.11 no.4
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• pp.290-293
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• 2001

The SrBi$_2$Nb$_2$O$_{9}$ (SBN) thin films were deposited on p-type(100) Si substrates by rf magnetron sputtering to confirm the Possibility of Pt/SBN/Si structure for the application of nondestructive read out ferroelectric random access memory (NDRO- FRAM). The SBN thin films were deposited by co-sputtering method with Sr$_2$Nb$_2$O$_{7}$ (SNO) and Bi$_2$O$_3$ ceramic targets. The SBN thin films deposited at room temperature were annealed at $700^{\circ}C$ for 1hr in $O_2$ ambient. The structural and electrical properties of SBN with different power ratios of targets were measured by x-ray diffraction(XRD), scanning electron microscopy(SEM), capacitance-voltage(C-V), and current-voltage(I-V). The C-V curves of the SBN films showed hysteresis curves of a clockwise rotation showing ferroelectricity. When the Power ratio of the SNO/Bi$_2$O$_3$ targets was 120 W/100 W, the SBN thin films had excellent electrical properties. The memory window of SBN thin film was 1.8 V-6.3 V at applied voltage of 3 V-9 V and the leakage current density was 1.5 $\times$ 10$^{-7}$ A/$\textrm{cm}^2$ at applied voltage of 5 V The composition of SBN thin films was analysed by electron probe X-ray micro analyzer(EPMA) and the atomic ratio of Sr:Bi:Nb with pawer ratio of 120 W/100 W was 1:3:2.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.32 no.5A
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• pp.490-496
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• 2007

This paper describes the design and implementation of an integrated LTCC front-end module for the IEEE802.11a WLAN applications by performing the behavioral-level simulation using measurement-based behavioral model. To meet the IEEE802.11a WLAN standard, a system transmitting 1024 symbols through 64-QAM process at the rate of 54Mbps should be implemented and nonlinear properties are confirmed by simulations of ACPR and EVM in this circumstance. The right offsets of ACPR which are 30MHz, 20MHz, and 11MHz distant from the center frequency of 5.8GHz are 49.36dBc, 36.90dBc, and 24.58dBc, respectively. The left offsets are 50.14dBc, 30.04dBc, and 28.85dBc, respectively and EVM is 2.94%. The size of the module implemented with LTCC five-layer substrates is $13.4mm{\times}14.2mm$. The measured characteristics of the transmitter show P1dB of 16.2dBm and power gain of 16.73dB. Those of the receiver exhibit the small signal gain of 16.24dB and noise figure of 7.83dB.

• Journal of the Institute of Electronics Engineers of Korea SC
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• v.37 no.4
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• pp.49-54
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• 2000

A new functional organic thin film optical waveguide ion sensor is designed, which can select a specific ion, i.e., $Ca^{2+}$ -ion. The sensing membrane was composed of PVC-PVAC-PVA copolymer matrix based on anionic cation-selective chromoionophor(ETH5294), neutral ionophore(K23El), anionic site and plasticizer and it was coated on the etched glass substrate as embeded type optical waveguide itself. The sensor sensitivity dependence on waveguide length and thickness, contence of chromoionophore, and each mode was investigated. And this sensor could detect $Ca^{2+}$ ion in concentrations ranging from 1$\times$10­6~1M(with 0.05M tris-HCI buffer solution of pH7.4) by measuring the absorbance change at 514nm of light. Utilizing thin film membrane, the fast response time and high sensitivity are obtained. Also, it is expected that this sensor can be applied to various biochemical important ions.ons.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.7
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• pp.473-478
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• 2001

Ferroelectric P $b_{0.99}$［(Z $r_{0}$ 6S $n_{0.4}$)/0.9/ $Ti_{0.1}$］0.98/N $b_{0.02}$ $O_3$(PNZST) thin films were deposited by a RF magnetron sputtering on L $a_{0.5}$S $r_{0.5}$Co $O_3$(LSCO)/Pt/Ti/ $SiO_2$/Si substrate using a PNZST target with excess PbO of 10 mole%. The crystallinity and electrical properties of the thin films annealed at various temperature and time were investigated. The thin films deposited at the substrate temperature of 500 $^{\circ}C$ and the power of 80 W were crystallized to a perovskite phase after rapid thermal annealing(RTA). The thin films annealed at 650 $^{\circ}C$ for 10 seconds in air exhibited the good crystal structures. The remanent polarization and coercive field of the PNZST capacitor were about 20 $\mu$C/$\textrm{cm}^2$ and 50 kV/cm, respectively. The reduction of the polarization after 2.2$\times$10$^{9}$ switching cycles was less than 10 %..10 %......

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.10
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• pp.671-677
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• 2001

A RuO$_2$ Schottky photo-detector was designed and fabricated with GaN layers on the sapphire substrate. For good absorption of UV light, an epitaxial structure with undoped GaN(0.5 ${\mu}{\textrm}{m}$)/n￣-GaN(0.1${\mu}{\textrm}{m}$)/n＋-GaN(1.5${\mu}{\textrm}{m}$) was grown by MOCVD. The structure had the carrier concentrations of 3.8$\times$10$^{18}$ cm￣$^3$, the mobility of 283$\textrm{cm}^2$/V.s. After ECR etching process for mesa structure with the diameter of about 500${\mu}{\textrm}{m}$, Al ohmic contact was formed on GaN layer. After proper passivation between the contacts with Si$_3$/N$_4$, was formed on undoped GaN layer. The fabricated Schottky diode had a specific contact resistance of 1.15$\times$10$^{-5}$ ［$\Omega$.$\textrm{cm}^2$］. It has a low leakage current of 305 pA at -5 V, which was attributed by stable characteristics of RuO$_2$ Schottky contact. In optical measurement, it showed the high UV to visible extinction ratio of 10$^{5}$ and very high responsivity of 0.23 A/W at the wavelength of 365nm.