• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.4
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• pp.655-659
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• 1998

The effect of quenching speed of melt-spinning on intrinsic coercivity ($_iH_c$$) of annealed ribbons and the crystallization behavior from amorphous $Nd_{14.73}Fe_{78.67}B_{6.60}$ alloy have been studied. We have found that the intrinsic coecivity for annealed melt-spun ribbon is reduced with increasing of quenching rate. $\alpha$-Fe and $Fe_3B$ were formed as intermediate phases prior to the formation of $Nd_2Fe_{14}B$ phase during crystallization. The $Fe_3B$ is disappeared with crystallization of $Nd_2Fe_{14}B$ phase. But the $\alpha$-Fe phase is retained in fully crystallized ribbon by annealing. The intrinsic coercivity loss of annealed ribbon with increasing of quenching speed is believed to be due to existence of soft magnetic phase $\alpha$-Fe in annealed ribbons.

• Korean Journal of Materials Research
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• v.22 no.4
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• pp.190-194
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• 2012

The formation of high-quality polycrystalline silicon (poly-Si) on relatively low cost substrate has been an important issue in the development of thin film solar cells. Poly-Si seed layers were fabricated by an inverse aluminum-induced crystallization (I-AIC) process and the properties of the resulting layer were characterized. The I-AIC process has an advantage of being able to continue the epitaxial growth without an Al layer removing process. An amorphous Si precursor layer was deposited on Corning glass substrates by RF magnetron sputtering system with Ar plasma. Then, Al thin film was deposited by thermal evaporation. An $SiO_2$ diffusion barrier layer was formed between Si and Al layers to control the surface orientation of seed layer. The crystallinity of the poly-Si seed layer was analyzed by Raman spectroscopy and x-ray diffraction (XRD). The grain size and orientation of the poly-Si seed layer were determined by electron back scattering diffraction (EBSD) method. The prepared poly-Si seed layer showed high volume fraction of crystalline Si and <100> orientation. The diffusion barrier layer and processing temperature significantly affected the grain size and orientation of the poly Si seed layer. The shorter oxidation time and lower processing temperature led to a better orientation of the poly-Si seed layer. This study presents the formation mechanism of a poly seed layer by inverse aluminum-induced crystallization.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.34 no.2
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• pp.99-104
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• 2021

Ion-beam sputtering (IBS) was used to deposit semiconducting IZTO (indium zinc tin oxide) thin films onto heavily-doped Si substrates using a sintered ceramic target with the nominal composition In0.4Zn0.5Sn0.1O1.5, which could work as a channel layer for oxide TFT (oxide thin film transistor) devices. The crystallization behavior and electrical properties were examined for the films in terms of deposition parameters, i.e. target tilt angle and substrate temperature during deposition. The thickness uniformity of the films were examined using a stylus profilometer. The observed difference in electrical properties was not related to the degree of crystallization but to the deposition temperature which affected charge carrier concentration (n), electrical resistivity (ρ), sheet resistance (Rs), and Hall mobility (μH) values of the films.

• Macromolecular Research
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• v.9 no.4
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• pp.228-237
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• 2001

The evolution of conformational constraints in bisphenol-A polycarbonate (BAPC) upon quiescent bulk crystallization was quantitatively analyzed from calorimetric study employing a rigid amorphous fraction (RAF) as an indicator of the level of conformational constraints. From the correlation between corrected crystallinity (X$\sub$c/) and total rigid fraction (f$\sub$r/), it was found that, regardless of molar mass distribution and thermal treatment conditions, semicrystalline BAPC always exhibits greater f$\sub$r/ than X$\sub$c/ maintaining a quantitative relationship of f$\sub$r/〓2X$\sub$c/ in the range of 0.0 $\sub$c/< 0.4. This directly indicates the evolution of approximately the same amount of RAF as X$\sub$c/, (i.e., RAF〓X$\sub$c/) upon bulk crystallization of BAPC. It was also found that T$\sub$g/ per se and T$\sub$g/ broadening enhance as RAF increases, and there appears to be a critical level of RAF (>0.2) needed to initiate significant changes in both quantities.

• Economic and Environmental Geology
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• v.27 no.5
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• pp.459-467
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• 1994

The Gadaeri granite near Ulsan mine is an oval-shape isolated granitic body, and is genetically related to the iron-tungsten mineralization. The Gadaeri granite exhibits calc-alkaline and I-type characteristics, and generally shows the micrographic texture which indicates the shallow depth of emplacement. Consideration of the stratigraphic thickness of Ulsan formation and minimum-melt compositions suggests that the bulk magma crystallized at pressure of 0.5~2.0 kbar under water saturated condition. The evolutionary trend observed in the studied rocks represents that feldspar fractional crystallization has been a major magmatic process at the Gadaeri granite pluton. Different chemical characteristics between the Gadaeri and the Masan-Kimhae granites cannot be explained by fractional crystallization or different degrees of partial melting, and it reflects that the magma source for Gadaeri granite was different from that of the Masan and Kimhae granites.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.8
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• pp.708-712
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• 2002

The crystallization of amorphous $\alpha$-Fe$_2$O$_3$/$\alpha$-AI$_2$O$_3$(0001) thin films during thermal annealing in air has been studied using real-time synchrotron x-ray scattering. The well aligned (0.02$^{\circ}$/ FWHM) $\alpha$-Fe$_2$O$_3$and Fe$_3$O$_4$interfacial crystallites (50- -thick) coexist on the $\alpha$-AI$_2$O$_3$(0001) in the sputter-grown amorphous films at room temperature. The amorphous precursor is crystallized to the epitaxial $\alpha$-Fe$_2$O$_3$grains in three steps with annealing temperature; i ) the growth of the well aligned $\alpha$-Fe$_2$O$_3$interfacial crystallites, together with the transformation of the Fe$_3$O$_4$crystallites to the $\alpha$-Fe$_2$O$_3$ crystallites, ii ) the growth of the less aligned (3.08$^{\circ}$ FWHM)$\alpha$-Fe$_2$O$_3$grains on the well aligned grains (＞40$0^{\circ}C$), and iii) the nucleation of the other less aligned (1.39$^{\circ}$ FWHM) $\alpha$-Fe$_2$O$_3$grains directly on the $\alpha$-AI$_2$O$_3$substrate (＞$600^{\circ}C$). The effective thickness thinner than 230 may be very useful for enhancing the epitaxial quality of $\alpha$-Fe$_2$O$_3$/AI$_2$O$_3$(0001) thin films.

• Molecules and Cells
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• v.19 no.3
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• pp.398-401
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• 2005

The bacterial enzyme UDP-N-acetylglucosamine enolpyruvyl transferase catalyzes the first committed step of peptidoglycan biosynthesis, i.e., transfer of enolpyruvate from phosphoenolpyruvate to UDP-N-acetyl-glucosamine. We have overexpressed the enzyme from Haemophilus influenzae in Escherichia coli and crystallized it in the apo-form, as well as in a complex with UDP-N-acetylglucosamine and fosfomycin using ammonium sulfate as the precipitant. X-ray diffraction data from a crystal of the apo-form were collected to $2.8{\AA}$ resolution at 293 K. The crystal quality was improved by co-crystallization with UDP-N-acetylglucosamine and fosfomycin. X-ray data to $2.2{\AA}$ have been collected at 100 K from a flash-frozen crystal of the complex. The complex crystals belong to the orthorhombic space group I222 (or $I2_12_12_1$) with unit-cell parameters of a = 63.7, b = 124.5, and $c=126.3{\AA}$. Assuming a monomer of the recombinant enzyme in the crystallographic asymmetric unit, the calculated Matthews parameter ($V_M$) is $2.71{\AA}^3Da^{-1}$ and solvent content is 54.6%.

• The Journal of the Petrological Society of Korea
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• v.21 no.3
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• pp.277-285
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• 2012

Hawaiite which distributed in Sanjideungdae of Sarabong cinder cone and Biseokgeori area in northern part of Jeju island, contains phenocrysts of titanium-rich hornblende (kaersutite) and plagioclase with microphenocrysts of olivine, pyroxene and very small amounts of K-feldspar lath and apatite. Kaersutite is mostly euhedral or subhedral phenocrysts having opaque reaction rim. And kaersutite in Sanjideungdae area completely replaced to opaque minerals showing pseudomorph. Also it may be seen partly replacement of pyroxene by kaersutire as reaction rim. It is considered that hydration reaction had occurred with fluids. The crystallization pressure of kaersutite using pressure-$Al^T$ geobarometer is approximately 6.3 kb in Sanjideungdae area and 4.9 kb in Biseokgeori area, respectively. As a result, fluid injection to magma and crystallization of kaersutite of Sanjideungdae hawaiite is deeper than that of Biseokgeori hawaiite, and it was growed to phenocrysts through crystallization. It is estimated that kaersutite of Biseokgeori hawaiite originated from crystallization from the host magma, based on the euhedral nature of the phenocrysts and on the presence of apatite inclusions.

• Journal of the Korean Society of Manufacturing Technology Engineers
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• v.19 no.3
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• pp.388-393
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• 2010

In recent years the research has been focused on the preparation of special glasses, i.e., chalcogenide and heavy metal oxide ones that can transmit optical radiation above 2 um and also other optical parameters exceed those of silica based glasses. The attention in this paper is focused on chalcogenide glasses, on preparation of high quality base glass, for an application in infrared optical product design and manufacture. The amorphous materials of As-Se and Ge-As-Se chalcogenides were prepared by a standard melt-quenching technique. The compositions were mesaured by ICP-AES and EPMA, and structural and thermal properties were studied through various annealing processes. Several anomalies of glass transition and crystallization were observed in the DSC/DTA/TG results of the chalcogenide glass.

• Korea-Australia Rheology Journal
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• v.15 no.2
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• pp.63-73
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• 2003

An experimental technique was developed to determine the strain-rate in a tensile specimen. Then one can calculate the transient isothermal elongational viscosity. Both shear and elongational viscosities were measured to study the effect of shear and elongational fields on the flow properties. The comparison between these viscosities shows that the onset of rapid viscosity growth as crystallization solidification proceeds occurs at about the same value of time at very small deformation rates (0.0028 and 0.0047 $s^{-1}$). The comparison of these measured viscosities as functions of shear and elongational Hencky strains also reveals that the onset of rapid viscosity growths starts at critical Hencky strain values. The behaviour of steady shear viscosity as function of temperature sweep was also explored at three different low shear rates. Finally, the influence of changing oscillatory frequencies and strain rates was also investigated.