• Transactions on Electrical and Electronic Materials
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• v.9 no.1
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• pp.12-15
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• 2008

Hafnium oxynitride films have been deposited onto a silicon substrate by means of radio frequency (RF) reactive sputtering using a hafnium dioxide $(HfO_2)$ target with a variety of nitrogen! argon $(N_2/Ar)$ gas flow ratios. Auger electron spectroscopy (AES)results confirm that $N_2$ was successfully incorporated into the HfON films. An increase in the $N_2/Ar$ gas flow ratio resulted in metal oxynitride formation. The films prepared with a $N_2/Ar$ flow ratio of 20/20 sccm show (222), (530), and (611) directions of $HfO_2N_2$, and the (-111), (311) directions of $HfO_2$. From X-ray reflectometry measurements, it can be concluded that with $N_2$ incorporated into the HfON films, the film density increases. The density increases from 9.8 to $10.1g/cm^3$. XRR also reveals that the surface roughness is related to the $N_2/Ar$ flow ratio.

• Journal of the Korean institute of surface engineering
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• v.29 no.1
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• pp.36-44
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• 1996

Fe-Cr-Al and Fe-Cr-Al-Hf alloys prepared either by arc melting or by single roll casting(melt spinning) were exposed to air isothermally at 900~$1100^{\circ}C$. Whisker-like alumina was observed on the surface of the specimens when oxidized at $900^{\circ}C$, but convoluted alumina above $1000^{\circ}C$. All the Hf-free specimens and Hf-added specimens produced by single roll casting formed only external scale mainly composed of $Al_2O_3$ after oxidation at 900~$1100^{\circ}C$ for 100 hours, but Hf-added specimen produced by arc melting formed Hf-rich internal oxides below the thin external $Al_2O_3$ scale except at $900^{\circ}C$. Most of the rapidly solidified Fe-Cr-Al alloys showed smaller weight gains than conventionally casted ones besides Hf-added one oxidized at $1100^{\circ}C$.

• Proceedings of the Korean Vacuum Society Conference
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• 2008.08a
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• pp.159-159
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• 2008

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.4 no.2
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• pp.157-168
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• 1994

The surface morphology, electrical properties, and optical properties of textured $SnO_2(:F)$ films according to deposition parameters such as HF and $H_2O$ content was studies. The electron concentration, resistivity, and mobility was $3{\Times}10^{20}/cm^3$, $7{\Times}10^4~9{\Times}10^4{Omega}cm$ and $18~25cm^2/V.sec$, respectively, when HF bubbling rate over 0.9 slm. The surface morphology was sharp edged pyramid shape without bubbling $H_2O$ but changed to round edged hemispherical shape when $H_2O$ was added.

• Economic and Environmental Geology
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• v.37 no.4
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• pp.375-381
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• 2004

Pyrochlore was known as one of the most promising materials for the immobilization of radioactive actinide. This study includes the synthesis, phase relation and characteristics of pyrochlores (CaCeH$f_xTi_{2-x}O_7$=0.2, 0.6, 1.0, 1.4, 1.8, 2.0) in the system of Ca-Ce-Hf-Ti-O. The samples were prepared from high purity of starting materials under the pressure of 400kg/cm$^2$ at room temperature, and were sintered at 1200∼1$600^{\circ}C$ The synthesized samples were analyzed and identified with XRD. The optimal formation conditions of pyrochlores were at 1300∼150$0^{\circ}C$ under $O_2$ atmosphere with batch compositions. During synthesis, pyrochlore, perovskite and $A_{2}BO_{5}$ oxide were formed. The characteristics of this system is that parameter of pyrochlore was increased with the content of hafnium. This phenomenon was due to the difference of ionic size between hafnium and titanium in six coordinated site.

• Journal of the Korean institute of surface engineering
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• v.33 no.4
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• pp.251-260
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• 2000

Ta and Hf added Ti-l5Sn-4Nb alloys without V and Al elements for biomaterial were melted by arc furnace in response to recent concerns about the long term safety of Ti-6Al-4V alloy. All specimens were homogenized at $1000^{\circ}C$ and solution treatment was performed at $812^{\circ}C$ and aging treatment at $500^{\circ}C$. The microstructure and mechanical properties were analysed by optical micrograph, hardness tester and instron. Ti-l5Sn-4Nb system alloys showed widmanstatten microstructure which is typical microstructure in $\alpha$＋$\beta$ type Ti alloys. The Ti-l5Sn-4Nb-2Hf and Ti-l5Sn-4Nb-2Ta alloys showed better hardness and tensile strength compared with Ti-6Al-4V. The result of XPS analysis, Ti-l5Sn-4Nb alloy in air atmosphere consisted of $TiO_2$, SnO and NbO.

• Applied Science and Convergence Technology
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• v.24 no.6
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• pp.289-292
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• 2015

The etching processes of glass in aqueous hydrofluoric acid (HF) solutions were used to improve the current density of solar cell. In this study, the textured glass substrate has been etched by solution and the $TiO_2$ thin films have been prepared on this textured glass. After the $TiO_2$ film deposition the surface has been etched by HF under different concentration and the etched $TiO_2$ thin films had a longer electron lifetime and higher haze ratio as well as light scattering, resulting in 1.7 times increment of dye-sensitized solar-cell(DSSC) efficiency. Increases in the surface root-mean-square roughness of glass substrates from 80 nm to 1774 nm enhanced haze ratio in above 300 nm wavelength. In particular, haze ratio of etched $TiO_2$ films on textured glass showed gradually increasing tendency at 550 nm wavelength by increasing of HF concentration up to 10M, suggesting a formation of crater with various sizes on its surface.

• Proceedings of the Korea Crystallographic Association Conference
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• 2002.11a
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• pp.42-43
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• 2002

반도체 디바이스의 발전은 높은 직접화 및 동작 속도를 추구하고 있으며, 이를 위해서 MOSFET의 scale down시 발생되는 문제를 해결해야만 한다. 특히, Channel이 짧아짐으로써 발생하는 device의 열화현상으로 동작전압의 조절이 어려워 짐을 해결해야만 하며, gate oxide 두께를 줄임으로써 억제할 수 있다고 알려져 왔다. 현재, gate oxide으로 사용되고 있는 SiO2박막은 비정질로써 ～8.7 eV의 높은 band gap과 Si기판 위에서 성장이 용이하며 안정하다는 장점이 있으나, 두께가 1.6 nm 이하로 얇아질 경우 전자의 direct Tunneling에 의한 leakage current 증가와 gate impurity인 Boron의 channel로의 확산, 그리고 poly Si gate의 depletion effect[1,2] 등의 문제점으로 더 이상 사용할 수 없게 된다. 2001년 ITRS에 의하면 ASIC제품의 경우 2004년부터 0.9～l.4 nm 이하의 EOT가 요구된다고 발표하였다. 따라서, gate oxide의 물리적인 두께를 증가시켜 전자의 Tunneling을 억제하는 동시에 유전막에 걸리는 capacitance를 크게 할 수 있다는 측면에서 high-k 재료를 적용하기 위한 연구가 진행되고 있다[3]. High-k 재료로 가능성 있는 절연체들로는 A1₂O₃, Y₂O₃, CeO₂, Ta₂O, TiO₂, HfO₂, ZrO₂,STO 그리고 BST등이 있으며, 이들 재료 중 gate oxide에 적용하기 위해 크게 두 가지 측면에서 고려해야 하는데, 첫째, Si과 열역학적으로 안정하여 후속 열처리 공정에서 계면층 형성을 배제하여야 하며 둘째, 일반적으로 high-k 재료들은 유전상수에 반비례하는 band gap을 갖는 것으로 알려줘 있는데 이 Barrier Height에 지수적으로 의존하는 leakage current때문에 절연체의 band gap이 낮아서는 안 된다는 점이다. 최근 20이상의 유전상수와 ～5 eV 이상의 Band Gap을 가지며 Si기판과 열역학적으로 안정한 ZrO₂[4], HfiO₂[5]가 관심을 끌고 있다. HfO₂은 ～30의 고유전상수, ～5.7 eV의 높은 band gap, 실리콘 기판과의 열역학적 안전성 그리고 poly-Si와 호환성등의 장점으로 최근 많이 연구가 진행되고 있다. 또한, Hf은 SiO₂를 환원시켜 HfO₂가 될 수 있으며, 다른 silicide와 다르게 Hf silicide는 쉽게 산화될 수 있는 점이 보고되고 있다.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.319.1-319.1
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• 2016

Recently, the Al-doped ZnO (ZnO:Al) films are intensively used in thin film a-Si solar cell applications due to their high transmittance and good conductivity. The textured ZnO:Al films are used to enhance the light trapping in thin film solar cells. The wet etch process is used to texture ZnO:Al films by dipping in diluted acidic solutions like HCl or HF. During that process the glass substrate could be damaged by the acidic solution and it may be difficult to apply it for the inline mass production process since it has to be done outside the chamber. In this paper we report a new technique to control the surface morphology of RF-sputtered ZnO:Al films. The ZnO:Al films are textured with vaporized HF formed by the mixture of HF and H2SiO3 solution. Even though the surface of textured ZnO:Al films by vapor etching process showed smaller and sharper surface structures compared to that of the films textured by wet etching, the haze value was dramatically improved. We achieved the high haze value of 78% at the wavelength of 540 nm by increasing etching time and HF concentration. The haze value of about 58% was achieved at the wavelength of 800 nm when vapor texturing was used. The ZnO:Al film texture by HCl had haze ratio of about 9.5 % at 800 nm and less than 40 % at 540 nm. In addition to low haze ratio, the texturing by HCl was very difficult to control etching and to keep reproducibility due to its very fast etching speed.

• Journal of the Korean Society of Food Science and Nutrition
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• v.27 no.6
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• pp.1204-1210
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• 1998

This study was focused on the purification, characterization and promotion mode of an anticoagulant polysaccharide from Hizikia fusiforme. The anticoagulant crude polysaccharide(HF 0) was obtained by using hot water extraction at 100oC for 3 hrs after homogenizing desalted Hizikia fusiforme. The anticoagulant polysaccharide(HF 2 3 1a) was purified from the crude extract(HF 0) through stepwise gradient ethanol precipitation(HF 2), DEAE Toyopearl 650C(HF 2 3), Sephadex G 75(HF 2 3 1), Sepharose CL 6B(HF 2 3 1a) chromatography and HPLC to homogeneity. HF 2 3 1a was estimated at 5.3$\times$105 Da molecular weight and composed of fucose(51.92%), galactose(19.34%), mannose(13.92%), xylose (7.14%), arabinose(3.95%) and rhamnose(3.78%), and comprimised 29.7 % sulfate residue. The sulfated anticoagulant polysaccharide from HF 2 3 1a was proposed to inhibit via the intrinsic pathway and common pathway in the blood coagulation. The HF 2 3 1a exhibited the anticoagulant activity by activating an antithrombin III and the activity depended on the concentration of HF 2 3 1a. Acute toxicity of HF 2 in mice was not detected. Only 14 of 33 control mice(11.4%) that had taken saline survived for 30 min after injecting thrombin(100 NIH unit/ml).