• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.193-193
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• 2013

실리콘 박막 태양전지는 광 흡수층에서 형성된 정공과 전자를 효과적으로 분리하기 위해 p형과 n형으로 도핑된 층을 형성하는 p-i-n구조를 갖게 된다. 이러한 도핑 층을 형성하기 위해 B2H6와 PH3와 같은 독성 가스를 사용하기 때문에, 공정 안정성과 환경적인 이슈가 대두된다. 또한 도핑은 추가적으로 실리콘 박막 태양전지의 안정화 효율을 지속적으로 저하시키는 요인이 된다. 이러한 문제점을 개선하기 위하여, 창층으로 MoO3, V2O5, WO3 등과 같이 높은 일함수를 갖는 전이금속 산화물을 사용하고, 광 흡수층으로 i-Si:H을, 후면 전극으로 낮은 일함수를 나타내는 LiF/Al을 사용하였다. 전이금속 산화물과 LiF/Al의 큰 일함수 차이에 의해서 흡수층인 i-Si:H 에서 생성된 캐리어들은 효과적으로 분리되고 수집이 된다. 금속 산화물은 스퍼터링 공정에 의하여 이루어졌으며, 스퍼터링 공정조건에 따라 산화도가 조절되며, 이러한 산화도에 따라 태양전지의 셀 특성이 결정된다. 도핑 층이 없는 새로운 형태의 실리콘 박막 태양전지는 기존 비정질 실리콘 박막 태양전지에 비해 높은 안정화 효율을 나타내며, 이는 도핑 층이 없기 때문에 기존 실리콘 박막 태양전지의 열화현상에 따른 효율저하가 발생하지 않는 장점을 지내고 있다.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.64-64
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• 1999

다결정 실리콘-게르마늄(poly-SiGe)은 태양전지 및 TFT-LCD와 같은 소자 응용에 있어서 중요하게 연구되고 있는 물질이다. 우리는 수소화된 비정질 실리콘-게르마늄 (a-Si1-xGex:H) 박막을 증착시키고 고상결정화시키며 XRD(x-ray diffraction) 및 ESR (electron spin resonance) 측정을 수행하였다. PECVD 증착가스는 SiH4과 GeH4가스를 사용하였고 Ge의 성분비는 x=0.0, 0.1, 0.5 정도로 조절되었다. 기판은 Corning 1737 glass를 사용하였고, 기판 온도는 20$0^{\circ}C$ 이었다. 증착압력과 r.f. 전력은 각각 0.6Torr와 3W이었다. 증착된 SiGe 박막은 고상결정화를 위해 $600^{\circ}C$ N2 분위기에서 가열되고, 그에 따른 XRD 및 ESR spectrum의 변화를 관찰하였다. ESR 측정은 X-band 그리고 상온에서 행해졌다. 먼저 XRD 측정으로부터 박막의 고상결정화 정도를 알 수 있었고, 고상결정화 과정이 초기 핵형성 단계와 결정화 단계, 그리고 더 이상 결정화가 일어나지 않는 완료 단계로 구분될 수 있음을 보여주었다. X값이 증가함에 따라 결정화 시간은 훨씬 단축되었다. ESR로 측정된 스핀 밀도는 a-Si1-xGex:H 박막이 처음 가열됨에 따라 전체적으로 크게 증가했다가, 결정화가 일어나면서 다시 감소하여 나중에는 거의 변화가 없었다. ESR 신호의 초기 증가는 수소 이탈에 의한 dangling bond의 증가에 기인하며, 다음 단계의 감소 및 안정 상태는 결정화에 따른 결정경계 영역의 감소와 결함들의 안정성에 기인하는 것으로 생각된다. 그러나 흥미로운 것은 Si1-xGex 합금의 경우 가열시간이 증가됨에 따라 Si-db(Si-dangling bond)와 Ge-db에 의한 신호가 서로 분리되어 나타났으며, 이 Si-db 스핀 밀도와 Ge-db 스핀밀도의 변화정도는 x값에 크게 의존함을 보여준 것이다. 즉 순수한 a-Si:H의 경우 Si-db 의 스핀밀도의 증가시간은 4시간 정도였고, 그리고 다시 감소하였으며, x=0.1 인 박막에서 Si-db와 Ge-db의 변화 시간은 순수 S-db 변화의 경우와 거의 유사하였다. 그러나 x=0.5 샘플에서는 Si-db의 변화가 빨라져서 0.1 시간 안에 증가되었고, Ge-db의 변화는 더 빠르게 수 분 동안에 증가 된후 다시 감소하였다. 이것은 수소의 Si에 대한 친화력 뿐 만아니라 Si-H과 Ge-H 결합에너지가 주위 원자들의 구성에 크게 영향받을 수 있는 가능성을 제시해준다.

• Proceedings of the KIEE Conference
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• 1994.07b
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• pp.1243-1245
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• 1994

SiN films were deposited in $Si_2H_6$(99.9%), $NH_3$(99.99%) gas mixture with carrier gas $N_2$ on Si substrate by ArF Excimer Laser CVD. SiN film deposition conditions that are substrate temperature and Laser average power were varied in order to investigate the dependence of SiN film on the condition. A post-deposition anneal was performed to examine variation of fixed charge density in the films. The deposition rate was increased as the substrate temperature and Laser power were increased during film deposition. The refractive index was increased with increasing substrate temperature, but it didn't have the dependence on Laser power. The fixed charge density was decreased when a post-deposition anneal was performed.

• Journal of Powder Materials
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• v.13 no.4 s.57
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• pp.285-289
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• 2006

Co-Fe-Ni-B-Si-Cr based amorphous strips containing nitrogen were manufactured via melt spinning, and then devitrified by crystallization treatment at the various annealing temperatures of $300^{\circ}C{\sim}540^{\circ}C$ for up to 30 minutes in an inert gas $(N_2)$ atmosphere. The microstructures were examined by using XRD and TEM and the magnetic properties were measured by using VSM and B-H meter. Among the alloys, the amorphous ribbons of $Co_{72.6}Fe_{9.8}Ni_{5.5}B_{2.4}Si_{7.1}Cr_{2.6}$ containing 121 ppm of nitrogen showed relatively high saturation magnetization. The alloy ribbons crystallized at $540^{\circ}C$ showed that the grain size of $Co_{72.6}Fe_{9.8}Ni_{5.5}B_{2.4}Si_{7.1}Cr_{2.6}$ alloy containing 121 ppm of nitrogen was about f nm, which exhibited paramagnetic behavior. The formation of nano-grain structure was attributed to the finely dispersed Fe4N particles and the solid-solutionized nitrogen atoms in the matrix. Accordingly, it can be concluded that the nano-grain structure of 5nm in size could reduce the core loss within the normally applied magnetic field of 300A/m at 10kHz.

• Journal of the Korean Magnetics Society
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• v.10 no.6
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• pp.269-273
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• 2000

Fe-l7Cr-2M(M=Si, Nb, Mo) alloy powder was prepared by plasma electrode rotating atomizer and than the alloy powder was formed and sintered. The particle shape of the Fe-l7Cr-2M(M=Si, Nb, Mo) alloy power is spherical. The saturation magnetization of the sintered Fe-17Cr-2Mo and Fe-l7Cr-2Nb alloy are 155 emu/g. The saturation magnetization of the sintered Fe-l7Cr-2Si alloy is less than that of the sintered Fe-l7Cr-2Mo and Fe-l7Cr-2Nb alloy. The amplitude relative permeability of the sintered Fe-l7Cr-2M(M=Si, Nb, Mo) alloy has the maximum value in the range of 3∼5 Oe applied field at forming pressure 12 ton/cm$^2$, sintering temperature 1200$^{\circ}C$, and frequency 1 kHz. Power loss of the sintered Fe-l7Cr-2Nb alloy is 40 mW/cc at applied field, H$\sub$a/=5 Oe, and frequency, f=1 kHz. The power loss of the sintered Fe-l7Cr-2Nb alloy is a half of that of the sintered Fe-l7Cr-2Si and Fe-l7Cr-2Mo alloy.

• Proceedings of the Korean Vacuum Society Conference
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• 1998.02a
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• pp.77-77
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• 1998

Present silicon dioxide (SiOz) 떠m as intennetal dielectridIMD) layers will result in high parasitic c capacitance and crosstalk interference in 비gh density devices. Low dielectric materials such as f f1uorina뼈 silicon oxide(SiOF) and f1uoropolymer IMD layers have been tried to s이ve this problem. I In the SiOF ftlm, as fluorine concentration increases the dielectric constant of t뼈 film decreases but i it becomes unstable and wa않r absorptivity increases. The dielectric constant above 3.0 is obtain어 i in these ftlms. Fluoropolymers such as polyte$\sigma$따luoroethylene(PTFE) are known as low dielectric c constant (>2.0) materials. However, their $\alpha$)Or thermal stability and low adhesive fa$\pi$e have h hindered 야1리ru뚱 as IMD ma따"ials. 1 The concept of a plasma processing a찌Jaratus with 비gh density plasma at low pressure has r received much attention for deposition because films made in these plasma reactors have many a advantages such as go여 film quality and gap filling profile. High ion flux with low ion energy in m the high density plasma make the low contamination and go어 $\sigma$'Oss피lked ftlm. Especially the h helicon plasma reactor have attractive features for ftlm deposition 야~au똥 of i앙 high density plasma p production compared with other conventional type plasma soun:es. I In this pa야Jr, we present the results on the low dielectric constant fluorocarbonated-SiOF film d밑JOsited on p-Si(loo) 5 inch silicon substrates with 00% of 0dFTES gas mixture and 20% of Ar g gas in a helicon plasma reactor. High density 띠asma is generated in the conventional helicon p plasma soun:e with Nagoya type ill antenna, 5-15 MHz and 1 kW RF power, 700 Gauss of m magnetic field, and 1.5 mTorr of pressure. The electron density and temperature of the 0dFTES d discharge are measUI벼 by Langmuir probe. The relative density of radicals are measured by optic허 e emission spe따'Oscopy(OES). Chemical bonding structure 3I피 atomic concentration 따'C characterized u using fourier transform infrared(FTIR) s야3띠"Oscopy and X -ray photonelectron spl:’따'Oscopy (XPS). D Dielectric constant is measured using a metal insulator semiconductor (MIS;AVO.4 $\mu$ m thick f fIlmlp-SD s$\sigma$ucture. A chemical stoichiome$\sigma$y of 야Ie fluorocarbina$textsc{k}$영-SiOF film 따~si야영 at room temperature, which t the flow rate of Oz and FTES gas is Isccm and 6sccm, res야~tvely, is form려 야Ie SiouFo.36Co.14. A d dielec$\sigma$ic constant of this fIlm is 2.8, but the s$\alpha$'!Cimen at annealed 5OOt: is obtain려 3.24, and the s stepcoverage in the 0.4 $\mu$ m and 0.5 $\mu$ m pattern 킹'C above 92% and 91% without void, res야~tively. res야~tively.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.6 no.1
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• pp.62-72
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• 1996

The interface formation and reaction-product morphology between SiC and thin metal films were studied at temperatures between 550 and $1450^{\circ}C$ for various times. The typical reaction layer sequence was CoSi/CoSi+C/CoSi/CoSi+C/ $\cdots$ /SiC reaction at 1050 and $1250^{\circ}C$ for 2 h, while $Ni_2Si/Ni_2Si+C/Ni_2Si/Ni_2Si+C/ {\cdots} /SiC$ at 950 and 105$0^{\circ}C$ for 2 h. Carbon precipitated preferentially on the outer surface and crystallized as graphite above $1450^{\circ}C$ for SiC/Co reaction zone and $1250^{\circ}C$ for SiC/Ni. The mechanism of the periodic band structure formation with carbon precipitation behaviour was discussed in terms of thermodynamic considerations.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.1028-1031
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• 2009

High quality poly-SiGe thin films were prepared on 6-inch substrates using Reactive-thermal CVD with $Si_2H_6$ and $GeF_4$ around at $500^{\circ}C$ directly. Its thickness uniformity was ~ 3% on the entire substrate area. N-channel mobility of ~30 nm thick bottom-gate TFTs exceeded 20 $cm^2$/Vs without any further crystallization.

• Proceedings of the KIEE Conference
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• 1997.07d
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• pp.1301-1303
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• 1997

This study was performed to investigate the deposition mechanism of $SiO_2$ by ArF excimer Laser(193nm) CVD with $Si_2H_6$ and $N_2O$ gas mixture and evaluate Laser CVD quantitatively by modeling. In this study, new model of $SiO_2$ deposition process by Laser CVD is introduced and deposition rates are simulated by computer with the basis on this modeling. And simulation results are compared with experimental results measured at various conditions such as reaction gas ratio, chamber pressure, substrate temperature and laser beam intensity.

• Journal of Powder Materials
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• v.12 no.6 s.53
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• pp.447-452
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• 2005

The synthesis and consolidation of titanium silicide by electro-discharge-sintering has been investigated. As-received Ti powder was in flaky shape and the mean particle size was $45.0{\mu}m$, whereas the mean particle size of the pre-milled Si powder with angular shape was $8.0{\mu}m$. Single pulse of 2.5 to 5.0 kJ/0.34g-elemental Ti and pre-milled Si powder mixture with the composition of $Ti-37.5at.\%$ Si was applied using $300{\mu}F$ capacitor. The solid with $Ti_5Si_3$ phase has been successfully fabricated by the discharge with the input energy more than 2.5kJ in less than $129{\mu}sec.$ Hv values were found to be higher than $1000kgf/mm^2$. The formation of $Ti_5Si_3$ occurred through a fast solid state diffusion reaction.