• Journal of Electrochemical Science and Technology
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• v.2 no.3
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• pp.168-173
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• 2011

The availability, low toxicity, and high degree of technological development make silicon the most likely material to be used in solar cells, the cost of solar cells depends entirely on cost of high purity silicon production. The present work was conducted to electrodeposite of silicon from $K_2SiF_6$, an inexpensive raw material prepared from fluorosilicic acid ($H_2SiF_6$) produced in Iraqi Fertilizer plants, and using inexpensive graphite material as cathode electrode. The preparation of potassium fluorosilicate was performed at ($60^{\circ}C$) in a three necks flask provided with a stirrer, while the electro deposition was performed at $750^{\circ}C$ in a three-electrodes configuration with melt containing in graphite pot. High purity potassium fluorosilicate (99.25%) was obtained at temperature ($60^{\circ}C$), molar ratio-KCl/$H_2SiF_6$(1.4) and agitation (600 rpm). Spongy compact deposits were obtained for silicon with purity not less than (99.97%) at cathode potential (-0.8 V vs. Pt), $K_2SiF_6$ concentration (14% mole percent) with grain size (130 ${\mu}m$) and level of impurities (Cu, Fe and Ni) less than (0.02%).

• Journal of the Korean Ceramic Society
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• v.39 no.2
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• pp.178-183
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• 2002

Zinc fluosilicate ($ZnSiF_6$, 15% aqueous solution) was prepared using zinc oxide (ZnO) and fluosilicic acid ($H_2SiF_6$) by soluiton synthetic method. The fluidity and hydration properties of cement which was added $ZnSiF_6$ (aq.) as an additive for cement were studied. At water to cement ratio (W/C) equals to 0.45, the initial fluidity and slump loss of cement paste which the addition of $ZnSiF_6$ (aq.) was increased from 1.0% to 4.0% based on cement weight were investigated. Initial fluidity of cement paste was measured by mini-slump test and slump loss was examined by measuring the fluidity variation of cement paste with time elapsed from 0 min to 120 min at intervals 30 min. Also, the effect of $ZnSiF_6$ addition on the setting and hydration of cement paste when $ZnSiF_6$ increased in the addition range 1.0% to 3.0% were investigated. The fluidity of cement paste which was added 2.1% $ZnSiF_6$ (aq.) presented the highest value among all addition ranges. The setting time of cement paste was retarded gradually and the heat evolution of hydrated cement was reduced with the increasing of $ZnSiF_6$ addition.

• Journal of the Korean Vacuum Society
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• v.7 no.4
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• pp.368-373
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• 1998

As device dimensions approach submicrometer size in ULSI, the demand for interlayer dielectric materials with very low dielectric constant is increased to solve problems of RC delay caused by increase in parasitic resistance and capacitance in multilevel interconnectins. Fluorinated amorphous carbon in one of the promising materials in ULSI for the interlayer dielectric films with low dielectric constant. However, poor thermal stability and adhesion with Si substrates have inhibited its use. Recently, amorphous hydrogenated carbon (a-C:H) film as a buffer layer between the Si substrate and a-C:F has been introduced because it improves the adhesion with Si substrate. In this study, therfore, a-C:F/a-C:H films were deposited on p-type Si(100) by ECRCVD from $C_2F_6, CH_4$and $H_2$gas source and investigated the effect of forward power and composition on the thickness, chemical bonding state, dielectric constant, surface morphology and roughness of a-C:F films as an interlayer dielectric for ULSI. SEM, FT-IR, XPS, C-V meter and AFM were used for determination of each properties. The dielectric constant in the a-C:F/a-C:H films were found to decrease with increasing fluorine content. However, the dielectric constant increased after furnace annealing in $N_2$atomosphere at $400^{\circ}C$ for 1hour due to decreasing of flurorine content. However, the dielectric constant increased after furnace annealing in $N_2$atmosphere at $400^{\circ}C$ for 1hour due to decreasing of fluorine concentration.

• Applied Chemistry for Engineering
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• v.29 no.1
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• pp.122-126
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• 2018

Mesoporous molecular sieves were prepared by the reaction of $Na_2SiO_3$ and $H_2SiF_6$ using nonionic micelle templates in an aqueous solution. Well-crystalline mesoporous molecular sieves were obtained after several seconds at atmospheric conditions. Powder samples exhibited d-spacing of 3.8-5.1 nm with the sharpness of the d00l peak, showing well-crystalline mesoporous molecular sieves, pore size distributions of 2.5-3.1 nm and large specific surface areas of $290-1,018m^2/g$, depending on types of surfactants. SEM images of samples showed well-divided spherical particles with an uniform size of ${\sim}0.5{\mu}m$ and TEM images demonstrated uniform pores with a worm hole shape.

• Journal of the Korean Ceramic Society
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• v.41 no.10 s.269
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• pp.749-755
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• 2004

Fluosilicic acid ($H_2SiF_6$) is recovered as aqueous solution which absorbs $SiF_4$ produced from the manufacturing of industrial-graded $H_3PO_4$ or HF. Generally, fluosilicate salts prepared by the reaction between $H_2SiF_6$ and metal salts. Addition of fluosilicate salts to cement endows odd properties through unique chemical reaction with the fresh and hardened cement. In this study, two-component fluosilicate salt based chemical admixtures (MZ) of $4\%,\;6\%$, and $8\%$ concentration were prepared by the reaction of $H_2SiF_6$ ($25\pm2\%$) and metal salts. The effect of concentration of MZ at a constant adding ratio on the hydration and watertightness of cement were investigated respectively. In a cement containing MZ, metal fluorides such as $CaF_2$ and soluble silica by hydrolysis were newly formed during hydration. The total porosity of the hardened cement was lower in the presence of U because of packing role of metal fluoride and pozzolanic reaction of soluble $SiO_2$. Consequently, the watertightness of the hardened paste containing MZ was more improved than non-added (plain) due to an odd hydration between cement and MZ.

• Journal of the Korean Chemical Society
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• v.43 no.1
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• pp.52-57
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• 1999

The anionic complexes, [ln($C_6F_5)_4$]-, which are thermal and moisture sensitive, have been prepared by the reaction of In($C_6F_5)_3{\cdot}D(D=CH_3CN$, O($C_2H_5)_2$) with the system ($CH_3)_3SiC_6F_5$/CsF, $C_6F_5$MgBr or Cd($C_6F_5)_2$. The stable anionic indium(III) complexes are obtained through cation exchange with PNPCI ([PNP]= bis(triphenylphosphino)ammonium). The pure substance is obtained by column chromatography. These new anionic complexes are unambiguously identifed by NMR-spectroscopy, IR spectroscopy, molecular weight, DTA/TG and elemental analysis.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.4 no.4
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• pp.809-815
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• 2000

The box capacitor structure with HSG-Si described here reliably achieves a cell capacitance of 28fF with a cell area of a $0.4820\mum^2$ for 128Mbit DRAM. An HSG-Si formation technology with seeding method, which employs Si2H6 molecule irradiation and annealing, was applied for realizing 64Mbit and larger DRAMS. By using this technique, grain size controlled HSG-Si can be fabricated on in-situ phosphorous doped amorphous silicon electrodes. The HSG-Si fabrication technology achieves twice the storage capacitance with high reliability for the stacked capacitors.The box capacitor structure with HSG-Si described here reliably achieves a cell capacitance of 28fF with a cell area of a $0.4820\mum^2$ for 128Mbit DRAM. An HSG-Si formation technology with seeding method, which employs Si2H6 molecule irradiation and annealing, was applied for realizing 64Mbit and larger DRAMS. By using this technique, grain size controlled HSG-Si can be fabricated on in-situ phosphorous doped amorphous silicon electrodes. The HSG-Si fabrication technology achieves twice the storage capacitance with high reliability for the stacked capacitors.

• Journal of the Korean Vacuum Society
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• v.4 no.S2
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• pp.64-68
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• 1995

Silicon films were deposited at $430^{\circ}C$ by remote plasma chemical vapor deposition(RPECVD) with a gas mixture of $Si_2H_6/SiF_4/H_2$. The silicon films deposited without and with $SiF_4$ were characterized using atomic force microscopy(AFM), transmission electron microscopy(TEM) and X-ray diffraction(XRD). Both silicon films have the same rugged surface morphology, but, the silicon film deposited with $SiF_4$ exhibits more rugged. The silicon film deposited without $SiF_4$ is amorphous, whereas the silicon film deposited with $SiF_4$ is polycrystalline with very small needle-like grains which are perpendicular to the substrate and uniformly distributed in the thickness of the film. The silicon film deposited with $SiF_4$ was found to have a preferred orientation along the growth direction with the<110> of the film parallel to the <111> of the substrate. The effect of $SiF_4$ during RPECVD was discussed.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2000.10a
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• pp.475-479
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• 2000

The box capacitor structure with H5G-Si described here reliably achieves a cell capacitance of 28fF with a cell area of a 0.482f${\mu}{\textrm}{m}$$^2$ for 128Mbit DRAM. An H5G-Si formation technology with seeding method, which employs Si$_2$H$_{6}$ molecule irradiation and annealing, was applied for realizing 64Mbit and larger DRAMS. By using this technique, grain size controlled H5G-Si can be fabricated on in-situ phosphorous doped amorphous silicon electrodes. The HSG-Si fabrication technology achieves twice the storage capacitance with high reliability for the stacked capacitors.s.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.137-137
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• 1999

DLC(diamond-like carbon) 필름은 경도가 높고 마찰계수가 낮다는 장점을 가지고 있기 때문에 내마모성 코팅이나 윤활성 코팅에 대한 많은 응용이 이루어지고 있다. 그러나 DLC 필름은 수 GPa 정도의 높은 필름 자체의 큰 잔류 응력을 가지며, 마찰 계수가 주변환경에 매우 큰 영향을 받는다는 단점이 있다. 이러한 단점은 DLC 필름의 응용에 대한 저해 요인이 되며, 이 점을 보완하기 위하여 DLC 필름에 Si를 첨가한 연구들이 진행되고 있다. 본 실험에서는 r.f-PACVD 법을 이용하여 Si이 첨가된 DLC 필름의 바이어스 전압에 따른 특성변화를 연구하였다. 사용한 반응 가스는 벤젠(C6H6)과 희석된 (SiH4:H2=10:90)이며, 희석된 실랜과 벤젠의 첨가비율은 6:4 고정시키고, 음전압은 -150V에서 -750V까지, -150V씩 증가하여 바이어스 전압의 변화에 따른 필름의 특성을 분석하였다. 바이어스 전압을 증가시킴에 따라 수소의 함량은 48.8 at.%에서 20.3 at.%로, Si의 함량은 1.5 at.%에서 2.4 at.%로 증가하였다. 그리고 잔류응력은 0.5GPa에서 2.1GPa로 증가하였고, 경도의 경우 5GPa에서 21.5GPa로 증가하는 경향을 보였다. 이러한 경향은 필름내부의 3차원 상호결합과 이온의 충돌에너지의 영향임을 알 수 있었다.