• 한국세라믹학회지
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• 제33권3호
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• pp.307-312
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• 1996

In following addition of 0.3, -0.6, 0.8, 1.0 and 5 weight percent MgSiF66H2O studies have been made of the setting and hardening characteristics of ordinary portland cement. MgSiF66H2O retarded the setting time of ordinary portland cement and extended the induction pariod of the hydration. In ordinary portland cement the setting characteristics were drastically altered especially at high MgSiF66H2O contents. Evidence was also obtained by the formation of a KSiF6 which was very fine particle. The results wee as follows. 1. Slump was slightly decreased when MgSiF66H2O added. 2. Setting time was retarded depending on the amount of retarding agent 2 to 8 hours 3. Compressive strength was almost same or some increased in comparision with opc. 4. When MgSiF66H2O was added to cement paste K2SiF6 were formed It was fine-sized distributed uniformly in cement grain and caused retardation of cement setting.

• 한국세라믹학회지
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• 제34권2호
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• pp.163-170
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• 1997

대표적인 무기계 지연제인 규불하마그네슘(MgSiF6.6H2O)을 시멘트 수화반응시 첨가했을 때의 수화반응의 지연 효과 및 특성과 수용액 이온농도 변화 고찰하기 위하여 규불화마그네슘을 시멘트 질랴의 0.3wt%에서 5wt%까지 변화시키면서 그 영향을 연구 검토하였다. 시멘트 모르타르의 flow는 지연제의 첨가에 따라 감소하는 경향이 있으며 응결 시간은 지연제의 첨가량에 따라 지연되었다. 모르타르의 압축 강도는 지연제의 첨가량에 따라 3일, 7일까지는 지연제를 첨가하지 않은 plain mortar에 비하여 약간 낮은 강도를 나타내나, 시간이 지남에 따라 회복되어 28일이 지나면 plain 모르타르와 같은 강도를 나타낸다. 규불화마그네슘이 첨가되면 수화 초기 단계에서 시멘트로부터 용출된 알카리 이온과 반응하여 K2SiF6의 생성이 일어나며 그와 동시에 Ca++와 F++와의 반응에 따라 CaF2화합물이 생성됨을 확인하였다. 이때 생성된 K2SiF6 및 CaF2생성물의 비표면적은 대단히 컸으며 이들 물질이 수화반응 초기에 미수화 시멘트시 입자 표면에 생성되어 시멘트의 수화가 지연되는 것으로 검토된다. 또한 수화초기의 수화용액의 Ca++ 및 K+이온 농도의 저하 역시 포틀랜드 수화반응속도를 지연시켜 주는 이유가된다.

• 한국진공학회지
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• 제4권S1호
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• pp.1-6
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• 1995

Polycrystalline Si films have been used in many applications such as thin film transistors(TFT), image sensors and LSI applications. In this research deposition of Si films at low temperatures with remote plasma enhanced CVD from Si2H6-SiF4-H2 on SiO2 was studied and their crystallinity was investigated. It was condluded that growth of crystalline Si films was favorable with (1) low Si2H6 flow rates, (2) moderate plasma power, (3) moderate SiF4 flow rates, (4) moderate substrate temperature, and (5) suitable method of surface cleaning.

• 한국환경과학회:학술대회논문집
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• 한국환경과학회 2003년도 봄 학술발표회 발표논문집
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• pp.279-280
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• 2003

실리콘웨이퍼 제조공정에서 폐기되는 HF에는 순수한 실라카만 함유되어 있지만 브라운관 업체에서 폐기되는 HF 폐액에는 유리의 조성에 따라서 다양한 성분들이 소량씩 함유되어 있다. 몰비로 Si:F=1:6이 되도록 조정한 후에 20% NaOH를 사용하여 pH를 6으로 조정하여 규불화소다를 얻고, 이어서 pH를 9로 조정하여 NaF를 었었다. 규불화소다에 NaCl, 칠레초석을 다양하게 첨가하여 금속 융제로 사용한 결과에 의하면 규불화소다의 양이 증가할수록 융제의 특성은 우수하였고, 가장 이상적인 첨가량은 50%~60%이었다. 따라서 각 공정에서 폐기되는 HF는 $Na_2SiF_{6}$와 NaF를 제조함으로서 재활용이 가능하였다.

• 한국진공학회지
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• 제1권1호
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• pp.145-152
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• 1992

Si surfaces exposed to CHF3/C2F6 gas plasmas ih reactive ion etching (RIE) have been characterized by X-ray photoelectron spectroscopy (XPS). CHF3/C2F6 gas plasma exposure of Si surface leads to the deposition of residual film containing carbon and fluorine. The narrow scan spectra of C 1s show various bonding states of carbon as C-Si, C-F/H, C-CFx(x $\leq$ 3), C-F, C-F2, and C-F3. The chemical bonding states of fluorine are described with F-Si, F-C and F-O. And the oxygen and silicon are also detected. The effects of parameters for reactive ion etching as CHF3/C2F6 gas ratio, RF power, and pressure are investigated.

• Bulletin of the Korean Chemical Society
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• 제22권12호
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• pp.1337-1340
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• 2001

The bulk photopolymerization of methyl methacrylate (MMA) with para-substituted phenylsilanes such as F-C6H4SiH3 (1), H3C-C6H4SiH3 (2), and H3CO-C6H4SiH3 (3) was performed to produce poly(MMA)s containing the respective silyl moiety as an end group. For all the hydrosilanes, the polymerization yields and the polymer molecular weights decreased, whereas the TGA residue yields and the relative intensities of Si-H IR stretching bands increased as the relative silane concentration over MMA increased. The polymerization yields and polymer molecular weights of MMA with 1-3 increased in the order of 3 < 1 < 2. These hydrosilanes influence significantly upon the photopolymerization of MMA as both chain-initiation and chain-transfer agents.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 춘계학술대회 논문집 센서 박막재료 반도체재료 기술교육
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• pp.66-69
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• 2002

This paper presents deposition and characterizations of microcrystalline silicon$({\mu}c-Si:H)$ films prepared by hot wire chemical vapor deposition at substrate temperature below $300^{\circ}C$. The $SiH_{4}$ concentration$[F(SiH_{4})/F(SiH_{4})+F(H_{2})]$ is critical parameter for the formation of Si films with microcrystalline phase. At 6% of silane concentration, deposited intrinsic ${\mu}c-Si:H$ films shows sufficiently low dark conductivity and high photo sensitivity for solar cell applications. P-type ${\mu}c-Si:H$ films deposited by Hot-Wire CVD also shows good electrical properties by varying the rate of $B_{2}H_{6}$ to $SiH_{4}$ gas. The solar cells with structure of Al/nip ${\mu}c-Si:H$/TCO/glass was fabricated with single chamber Hot-Wire CVD. About 3% solar efficiency was obtained and applicability of HWCVD for thin film solar cells was proven in this research.

• 한국결정성장학회지
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• 제3권2호
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• pp.107-116
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• 1993

LPCVD 조건하에서 Si 기판을 이용하여 W$F_6$를 환원시키거나 Si$H_4$를 이용하여 W$F_6$를 환원시켜 Si(100) 기판위에 텅스텐 박막을 증착하였다. 증착된 박막들의 표면 및 단면 형상과 특성들을 조사하였으며 박막들의 결정구조는 체심입방구조를 이루는${alpha}$-W임을 알수 있었다. 박막내의 텅스텐의 양과 grain들의 크기는 박막이 성장함에 따라 증가하였다. 실험적인 결과와 이론적인 고찰들로부터 텅스텐 박막은 Volmer-Weber 성장양식인 island growth를 이룸을 알 수 있었고 세부적인 박막 성장양식을 제시하였다. 또한 텅스텐 박막이 성장할수록 박막의 결정구조는 점점 단결정화 하여감을 알수 있었다.

• Bulletin of the Korean Chemical Society
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• 제31권5호
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• pp.1349-1354
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• 2010

The geometries and isomerization of the alkylidene silylenoid $H_2C$ = SiLiF as well as its insertion reactions with R-H (R = F, OH, $NH_2$) have been systematically investigated at the B3LYP/6-311+$G^*$ level of theory. The potential barriers of the three insertion reactions are 97.5, 103.3, and 126.1 kJ/mol, respectively. Here, all the mechanisms of the three reactions are identical to each other, i.e., an intermediate has been formed first during the insertion reaction. Then, the intermediate could dissociate into the substituted silylene ($H_2C$ = SiHR) and LiF with a barrier corresponding to their respective dissociation energies. Correspondingly, the reaction energies for the three reactions are -36.4, -24.3, and 3.7 kJ/mol, respectively. Compared with the insertion reaction of $H_2C$ = Si: and R-H (R = F, OH and $NH_2$), the introduction of LiF makes the insertion reaction occur more easily. Furthermore, the effects of halogen (F, Cl, Br) substitution and inorganic salts employed on the reaction activity have also been discussed. As a result, the relative reactivity among the three insertion reactions should be as follows: H-F > H-OH > H-$NH_2$.

• 한국재료학회지
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• 제28권12호
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• pp.709-713
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• 2018

To improve the etch rate of $Si_3N_4$ thin film, $H_2SiF_6$ is added to increase etching rate by more than two times. $SiO_3H_2$ is gradually added to obtain a selectivity of 170: 1 at 600 ppm. Moreover, when $SiO_3H_2$ is added, the etching rate of the $SiO_2$ thin film increases in proportion to the radius of the wafer. In $Si_3N_4$ thin film, there is no difference in the etching rate according to the position. However, in the $SiO_2$ thin film, the etching rate increases in proportion to the radius. At the center of the wafer, the re-growth phenomenon is confirmed at a specific concentration or above. The difference in etch rates of $SiO_2$ thin films and the reason for regrowth at these positions are interpreted as the result of the flow rate of the chemical solution replaced with fresh solution.