• 대한의용생체공학회:의공학회지
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• 제32권2호
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• pp.118-126
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• 2011

This study proposes a human body orientation tracking system by inertial and earth magnetic sensors. These sensors were fused by indirect Kalman filter. The proposed tracking system was configured and the filter was implemented. The tracking performance was evaluated with static and dynamic tests. In static test, the sensor was fixed on the floor while its static characteristics was analyzed. In dynamic test, the sensor was held and moved manually for 30 seconds. The dynamic test included x, y, z axis rotations, and elbow flection/extension motions that mimic drinking. For these dynamic motions, the tracking angle error was under $4.1^{\circ}$ on average. The proposed tracking method is expected to be useful for various human body motion analysis.

• 센서학회지
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• 제1권1호
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• pp.5-12
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• 1992

팩시밀리용 1차원 영상감지소자로 사용 가능한 수소화된 비정질 실리콘 다층막을 RF 글로방전 분해법으로 제작하였다. ITO/i-a-Si:H/Al 구조는 양전극으로부터의 캐리어주입과 인듐확산으로 인한 암전류가 상대적으로 크므로 본 논문에서는 이 암전류를 억제하고, ITO/i-a-Si:H의 계면에 임듐확산으로 인한 광전변환특성의 저하를 막기 위하여 $SiO_{2}$ 혹은 $SiO_{x}N_{y}$막이 사이에 끼인 ITO/유전체/i-a-Si:H/p-a-Si:H/Al구조를 제작하였다. 이는 계면의 전장을 증가시켜 양호한 광전변환특성을 얻기 위한 것이다. $SiO_{2}$막의 두께가 $300{\AA}$이고 p-a-Si:H막의 두께가 $1500{\AA}$일 때 암전류는 0.1nA이하로 억제되고 광전류도 5V의 인가전압에서 20nA로 포화되었다. 또한 광이용률을 향상시키기 위해 $SiO_{x}N_{y}$막을 ITO와 함께 이중 반반사약으로 형성시켜 ITO/a-$SiO_{x}N_{y}$/i-a-Si:H/p-a-Si:H/Al구조의 다층막을 제작하였다. 이 때 $SiO_{x}N_{y}$막 및 p-a-Si:H막의 두께는 각각 $300{\AA}$ 및 $1500{\AA}$으로 하였다. 광도 $20{\mu}W/cm^{2}$ 및 인가바이어스 5V하에서 광전류는 30nA, 암전류는 0.08nA로 각각 좋은 특성을 나타내었으며 광전류도 5V게서 포화되었다. 또한 분광감도특성의 결과로부터 단층막의 최대감도를 나타내는 파장은 약 630nm이었으며 다층막의 경우는 약 560nm정도이었다. 제작된 다층막의 균일도는 약 5%의 오차를 가졌으며 광응답시간은 0.3msec였다.

• 센서학회지
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• 제5권1호
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• pp.9-14
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• 1996

$WO_{3}$가 첨가된 $BaTiO_{3}$를 고상법으로 제작하여 상온에서 $160^{\circ}C$의 온도 범위와 300 kHz - 300 MHz의 주파수 범위에서 회로망분석기를 이용하여 2포트 S-파라메터 방법으로 고주파 저항, 리액턴스 및 임피던스를 측정하여 $130^{\circ}C$ 이하에서 주파수 및 온도센서로서의 가능성을 진단하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 추계학술대회 논문집 Vol.16
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• pp.396-399
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• 2003

In this paper, the purpose is to develop imaging technique of synchrotron radiation using CMOS image sensor. The detector using hybrid method to be research in this lab was used, in order to increase image signal. We made experiments with 1B2 Whitebeam/microprobe beamline in PAL (Pohang Accelerator Laboratory). Phosphor materials such as ZnS:(Ag,Li), ZnS:(Cu,Al), $Y_2O_2S:Eu$ were produced by spin coating on glass. Synchrotron radiation images were acquired and evaluated from monochromatic light from monochromoator in PAL 1B2line. From obtained object and phantom, MTF was 0.15 in ZnS:(Ag,Li) phosphor, and 0.178 in ZnS:( Cu,Al) at 151p/mm. MTFs were unsystematic because thickness of phosphor and uniformity of surface were not optimized. It's expected to improve MTF and the qualify of images as uniformity's optimized.

• Bulletin of the Korean Chemical Society
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• 제26권1호
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• pp.38-42
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• 2005

Bis(2-methylbenzaldehyde)butane-2,3-dihydrazone(TDSB) was used as new N-N Schiff's base which plays the role of an excellent ion carrier in the construction of a La(III) membrane sensor. The best performance was obtained with a membrane containing, 30% poly(vinyl chloride), 60% benzyl acetate, 6% TDSB and 4% sodium tetraphenyl borate. This sensor reveals a very good selectivity towards La(III) ions over a wide variety of cations, including alkali, alkaline earth, transition and heavy metal ions. The proposed electrode exhibits a Nernstian behavior (with slope of 19.8 mV per decade) over a wide concentration range (1.0 ${\times}$ 10$^{-5}$-1.0 ${\times}$ 10$^{-1}$ M). The detection limit of the sensor is 7.0 ${\times}$ 10$^{-6}$ M. It has a very short response time, in the whole concentration range ($\sim$5 s), and can be used for at least twelve weeks in the pH range of 3.0-9.4. The proposed sensor was successfully applied as an indicator electrode for the potentiometric titration of a La(III) solution, with EDTA. It was also successfully applied in the determination of fluoride ions in three mouth wash preparations.

• 센서학회지
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• 제33권2호
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• pp.105-111
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• 2024

In this study, the H₂S gas sensing characteristics were evaluated using surface-modified SnO₂ microparticles by tip sonication. The surface-modified SnO₂ microparticles were synthesized using the following sequential process. First, bare SnO₂ microparticles were synthesized via a hydrothermal method. Then, the surfaces of bare SnO₂ microparticles were modified with Ti nanoparticles during tip sonication. The sensing characteristics of SnO₂ microparticles modified with Ti were systematically investigated in the range of 100-300℃, compared with the bare SnO₂ microparticles. In this study, we discuss in detail the improved H₂S sensing characteristics of SnO₂ microparticles via Ti nanoparticle modification.

• Bulletin of the Korean Chemical Society
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• 제33권7호
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• pp.2229-2237
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• 2012

The two chelates based on calix[4]arene and thiacalix[4]arene have been synthesized and used as neutral ionophores for preparing PVC based membrane sensor selective to $Ho^{3+}$ ion. The addition of potassium tetrakis(4-chlorophenyl)borate (KTpClPB) and various plasticizers, viz., NDPE, o-NPOE, DOP, TEP and DOS have been found to improve significantly the performance of the sensors. The best performance was obtained with the sensor no. 6 having membrane of $L_2$ with composition (w/w) ionophore (2%): KTpClPB (4%): PVC (37%): NDPE (57%). This sensor exhibits Nernatian response with slope $21.10{\pm}0.3mV/decade$ of activity in the concentration range $3.0{\times}10^{-8}-1.0{\times}10^{-2}M\;Ho^{3+}\;ion$, with a detection limit of $1.0{\times}10^{-8}M$. The proposed sensor performs satisfactorily over a wide pH range of 2.8-10, with a fast response time (5 s). The sensor was also found to work successfully in partially non-aqueous media up to 25% (v/v) content of methanol, ethanol and acetonitrile, and can be used for a period of 4 months without any significant drift in potential. The electrode was also used for the determination of $Ho^{3+}$ ions in synthetic mixtures of different ions and the determination of the arsenate ion in different water samples.

• Bulletin of the Korean Chemical Society
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• 제28권1호
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• pp.68-72
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• 2007

A new PVC membrane potentiometric sensor that is highly selective to Hg2+ ions was prepared, using bis(2-hydroxybenzophenone) butane-2,3-dihydrazone (HBBD) as an excellent hexadendates neutral carrier. The sensor works satisfactorily in the concentration range of 1.0 × 10-6 to 1.0 × 10-1 mol L-1 (detection limit 4 × 10-7 mol L-1) with a Nernstian slope of 29.7 mV per decade. This electrode showed a fast response time (~8 s) and was used for at least 12 weeks without any divergence. The sensor exhibits good Hg2+ selectivity for a broad range of common alkali, alkaline earth, transition and heavy metal ions (lithium, sodium, potassium, magnesium, calcium, copper, nickel, cobalt, zinc, cadmium, lead and lanthanum). The electrode response is pH independent in the range of 1.5-4.0. Furthermore, the developed sensor was successfully used as an indicator electrode in the potentiometric titration of mercury ions with potassium iodide and the direct determination of mercury in some binary and ternary mixtures.

• 한국표면공학회지
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• 제50권2호
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• pp.125-130
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• 2017

ZnO nanowires were synthesized and annealed at various temperatures of $500-800^{\circ}C$ in oxygen atmosphere to investigate hydrogen gas sensing properties. The diameter and length of the synthesized ZnO nanowires were approximately 50-100 nm and a few $10s\;{\mu}m$, respectively. $H_2$ gas sensing performance of the ZnO nanowires sensor was measured with electrical resistance changes caused by $H_2$ gas with a concentration of 0.1-2.0%. The response of ZnO nanowires at room temperature to 2.0% $H_2$ gas is found to be two times enhanced by annealing process in $O_2$ atmosphere at $800^{\circ}C$. In the current study, the effect of heat treatment in $O_2$ atmosphere on the gas sensing performance of ZnO nanowires was studied. And the underlying mechanism for the sensing improvement of the ZnO nanowires was also discussed.

• 센서학회지
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• 제20권4호
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• pp.260-265
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• 2011

The silicon vertical hall devices are fabricated using a modified bipolar process. It consists of the thin p-layer at Si-$SiO_2$, interface and n-epi layer without $n^+$buried layer to improve the sensitivity and influence of interface effects. Experimental samples are a sensor type I with and type H without p+isolation dam adjacent to the center current electrode. The experimental results for both type show a more high current-related sensitivity than the former's vertical hall devices. The sensitivity of type H and type I are about 150 V/AT and 340 V/AT, respectively. This sensor's behavior can be explained by the similar J-FET model.