• Journal of Welding and Joining
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• 제32권3호
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• pp.60-67
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• 2014

The ability of electronic packages and assemblies to resist solder joint failure is becoming a growing concern. This paper reports on a study of high speed shear energy of Sn-4.0wt%Ag-0.5wt%Cu (SAC405) solder with different electroless Ni-P thickness, with $HNO_3$ vapor's status, and with various pre-conditions. A high speed shear testing of solder joints was conducted to find a relationship between the thickness of Ni-P deposit and the brittle fracture in electroless Ni-P deposit/SAC405 solder interconnection. A focused ion beam (FIB) was used to polish the cross sections to reveal details of the microstructure of the fractured pad surface with and without $HNO_3$ vapor treatment. A scanning electron microscopy (SEM) and an energy dispersive x-ray analysis (EDS) confirmed that there were three intermetallic compound (IMC) layers at the SAC405 solder joint interface: $(Ni,Cu)_3Sn_4$ layer, $(Ni,Cu)_2SnP$ layer, and $(Ni,Sn)_3P$ layer. The high speed shear energy of SAC405 solder joint with $3{\mu}m$ Ni-P deposit was found to be lower in pre-condition level#2, compared to that of $6{\mu}m$ Ni-P deposit. Results of focused ion beam and energy dispersive x-ray analysis of the fractured pad surfaces support the suggestion that the brittle fracture of $3{\mu}m$ Ni-P deposit is the result of Ni corrosion in the pre-condition level#2 and the $HNO_3$ vapor treatment.

• 환경위생공학
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• 제6권2호
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• pp.109-121
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• 1991

For the analysis of mercury in blood and urine, many literatures have been reffered and many kinds of reducing agents for mercury reduction and many acids for pretreatmr are known to be varied. $So HNO_{3}$ and $H_{2}SO_{4}$ among acids and $SnCl_{2}$ and $NaBH_{4}$ as a reducing agent being chosen for the establishment of more efficient and less erroneous analysis, and comparing the absorbance by using vapor generator, the results are followings. 1. The difference of absorbance from concentration of $HNO_{3}$ and $H_{2} SO_{4}$ was not nearly found when mercury reduced by $NaBH_{4}$ after pretreatment. But for more precise analysis, conc acid treatment need to be used. 2. Higher absorbance was shown by using conto acid treatment (P<0.005) when mercury reduced by $NaBH_{4}$ after treating acid primer. And sample which has 99.5% reliability in T-test, treated by conc $H_{2}SO_{4}$(P<0.005) was shown higher absorbance than treat by CORC $HNO_{3}$. 3. The difference of absorbance was not in the slightest in higher 0.1 w/v% $NaBH_{4}$ proved by uruskal-wallis H-Test 4. Some difference of absorbance in $SnCl_{2}$(P<0.005) having 99.5% reliability was found but there was no difference in these 20 w/v% , 25 w/v% and 30 w/v% SnCl$_{2}$ by the experiment of T-test. 5. According to these test results, organic materials were much affect the absorballce when reducing mercury by using $SnCl_{2}$ rather than by $NaBH_{4}$. For bio sample which is contained various organic substances, reduclng agent $NaBH_{4}$ is a lot more efficient to reduce the error then $SnCl_{2}$. 6. analytic method for this study is as following. 7. As the recovery test was done by this, the rate of recovery was shown form 94% to 100.7% .

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.323-323
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• 2010

Saw damage of crystalline silicon wafer is unavoidable factor. Usually, alkali treatment for removing the damage has been carried out as the saw damage removal (SDR) process for priming the alkali texture. It usually takes lots of time and energy to remove the sawed damages for solar grade crystalline silicon wafers We implemented two different mixed acidic solution treatments to obtain the improved surface structure of silicon wafer without much sacrifice of the silicon wafer thickness. At the first step, the silicon wafer was dipped into the mixed acidic solution of $HF:HNO_3$=1:2 ration for polished surface and at the second step, it was dipped into the diluted mixed acidic solution of $HF:HNO_3:H_2O$=7:3:10 ratio for porous structure. This double treatment to the silicon wafer brought lower reflectance (25% to 6%) and longer carrier lifetime ($0.15\;{\mu}s$ to $0.39\;{\mu}s$) comparing to the bare poly-crystalline silicon wafer. With optimizing the concentration ratio and the dilution ratio, we can not only effectively substitute the time consuming process of SDR to some extent but also skip plasma enhanced chemical vapor deposition (PECVD) process. Moreover, to conduct alkali texture for pyramidal structure on silicon wafer surface, we can use only nitric acid rich solution of the mixed acidic solution treatment instead of implementing SDR.

• 대한화학회지
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• 제41권8호
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• pp.399-405
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• 1997

수소화합물 발생법-유도결합플라스마 원자방출 분광기로 암석및 퇴적물 시료중에 미량으로 존재하는 게르마늄을 효과적으로 분석하는 방법을 찾는 실험이다. 고체시료를 산분해하여 용액화할 때 게르마늄은 휘발성이 강한 화합물을 형성하지만 $H_3PO_4$가 존재하면 휘발이 억제되므로 $HF-HNO_3-H_3PO_4$의 혼합산을 사용하면 게르마늄의 휘발없이 open digestion system으로 고체 시료의 완전 용해가 가능하다. 또한 이 용액으로 다른 전처리 과정없이 수소화합물 발생법으로 분석이 가능하다. 게르마늄 수소화합물 발생법에서는 보조산으로 5M $H_3PO_4$와 환원제로 1% $NaBH_4$을 사용하여 검출한계를 0.08 ppb까지 얻을 수 있었으며 이 조건에서는 시료중에 과량으로 존재하는 공존원소의 방해도 무시할 수 있었다. 표준시료의 분석값이 보고된 값과 잘 일치하였으며 ICP-MS의 용액시료 도입법으로 측정한 값과도 잘 일치하였다.

• 마이크로전자및패키징학회지
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• 제21권3호
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• pp.43-50
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• 2014

전자 제품의 경박 단소화 및 고집적화가 이루어 지면서 실리콘 집과 인쇄회로기판의 인터커넥션의 고신뢰도가 요구되고 있다. 본 연구는 Sn-4.0wt%Ag-0.5wt%Cu (SAC405) 솔더와 다양한 무전해 Ni-P 도금 두께에서의 high speed shear 에너지 및 파괴 모드를 연구하였다. 파괴 모드 분석을 위하여 집속이온빔(FIB) 분석이 이용되었다. 질산 기상 처리하지 않은 $1{\mu}m$ Ni-P 시편에서 낮은 shear 에너지가 나왔으며, 이는 솔더레지스트 선단에서 파단의 원인을 제공하는 것이 확인되었다. 질산 기상 처리한 시편에서 무전해 Ni-P 도금 두께가 커질수록 취성 파괴 모드는 감소한다. 또 Ni-P 도금 두께와 표면 거칠기(Ra)는 반비례 관계를 가진다. 이는 Ni-P 도금의 표면 거칠기를 낮추면 SAC405 솔더 조인트의 신뢰도를 향상시킨다는 사실을 나타낸다.

• 한국환경과학회지
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• 제17권5호
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• pp.565-571
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• 2008

The surface properties of activated carbon modified by acids and base were studied. The influence of the surface chemistry on the adsorption of benzene and acetone vapor on modified activated carbons has been investigated The modified activated carbons were obtained by treatment with acetic acid ($CH_3COOH$), nitric acid ($HNO_3$) and sodium hydroxide (NaOH). The modified activated carbons had similar porosity but different surface chemistry and adsorption characteristics. The total surface acidity (sum of functional groups) of activated carbon (AC-AN) treated by nitric acid was 2.6 times larger than that of activated carbon (AC) before the acid treatment. Especially, carboxyl group was much developed by nitric acid treatment. The benzene equilibrium adsorption capacity of AC-AN decreased 20% more than that of AC. However, the acetone equilibrium adsorption capacity of AC-AN increased 20% more than that of AC because of the large increase of carboxyl group and acidity.

• 공업화학
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• 제24권1호
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• pp.31-37
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• 2013

텍스쳐링에 의해 실리콘 웨이퍼의 표면반사율을 감소시키는 것은 실리콘 태양전지의 효율향상을 위해 매우 중요한 공정이다. 본 연구에서는 에칭속도 제어를 위해 촉매제를 포함한 산 용액으로 텍스쳐링 처리한 웨이퍼의 표면효과와 그 태양전지 특성을 평가 고찰하였다. 텍스쳐링 전 $HNO_3-H_2O_2-H_2O$ 용액의 전처리는 표면반사율의 초기 저감효과를 가져왔다. 이는 산화특성에 의해 유기 불순물이 제거되고 텍스쳐링을 위한 핵의 생성에 기인한다고 할 수 있다. 이후 공정에서 불산/질산 용액에 인산 및 초산과 같은 완충제를 첨가한 혼합용액을 제조하고, 적정 농도 조합과 그 처리시간의 최적화를 통해 개선된 텍스쳐링 효과를 얻을 수 있었으며 이 효과는 표면반사율 감소를 통해 확인할 수 있었다. 이렇게 제조된 실리콘 웨이퍼에 반사방지막 코팅 후 태양전지를 제작하여 그 변환효율을 측정한 결과 16.4%의 양호한 특성을 나타냈다. 이는 개선된 텍스쳐링 처리에 의해 저감된 표면특성에 의한 단락전류의 증가에 기인한 것으로 추정된다.