• 한국신재생에너지학회:학술대회논문집
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• 2009.06a
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• pp.349-352
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• 2009

In this study, the relation between the performance degradation of SOFC single cell and the increase of polarization resistance for the cathode is investigated. $Pr_{0.3}Sr_{0.7}Co_{0.3}Fe_{0.7}O_3$(PSCF3737, $19.4{\times}10^{-6}K^{-1}$) and $Gd_{0.1}Ce_{0.9}O_2$ (CGO91, $12{\times}10^{-6}K^{-1}$) are used as a cathode and an electrolyte, respectively. The polarization resistance of cathode is increased due to the delamination caused by thermal expansion coefficient difference. The voltage drop with 10%/1000h decline rate occurs during long-term, when the interface between the cathode and the electrolyte is delaminated due to TEC difference.

• Journal of the Korean Ceramic Society
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• v.42 no.12 s.283
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• pp.787-792
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• 2005

A symmetrical LSCF $(La_{0.6}Sr_{0.4}Co_{0.2}Fe_{0.8}O_{3-\delta})\;ScSZ(89ZrO_2-10Sc_2O_3-1CeO_2)/LSCF$ electrochemical cell with a GDC (Gadolinium-Doped Ceria, $90CeO_2-10Gd_2O_3$) interlayer that was inserted between the LSCF cathode and ScSZ electrolyte was fabricated, and the electrochemical performance of these cells was evaluated. The GDC interlayer was deposited on a ScSZ electrolyte using a screen-printing technique. The GDC interlayer prevented the unfavorable solid-state reactions at the LSCF/ScSZ interfaces. The LSCF cathode on the GDC interlayer had excellent electrocatalytic performance even at $650^{\circ}C$. The Area Specific Resistance (ASR) was strongly dependent on the thickness and heat-treatment temperature of the GDC interlayer. The impedance spectra showed that the cell with a $15\~27{\mu}m$ thick GDC interlayer heat-treated at $1200^{\circ}C$ had the lowest ASR.

• Journal of the Korean Magnetics Society
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• v.5 no.5
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• pp.683-686
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• 1995

Using by the x-ray diffractometry(XRD), the thermomagnetic analysis(TMA), a scanning electron microscopy (SEM-EDX), we knew that the $(Sm_{0.5}RE_{0.5})Fe_{11}Ti$ (RE=Ce,Pr,Nd,Sm,Gd,Tb) compounds were formed to tetragonal $ThMn_{12}$-type structure having a uniaxial magnetocrystalline anisotropy with easy magnetization c-axis. The intrinsic magnetic properties of those were determined by fitting the two magnetization curves of experimental and calculation magnetization. The anisotropy constant $K_{1}$ of this compounds was in the range of $1.75\;-\;9.2\;MJ/m^{3}$ and approximately one order higher than $K_{2}$. $SmFe_{11}Ti$ had the highest anisotropy of $K_{1}\;=\;9.2\;MJ/m^{3}$, $K_{2}\;=\;0.4\;MJ/m^{3}$ and ${\mu}_{o}H_{A}=\;19.8\;T$ among the compounds, substitution of any other rare earth elements for Sm decreased magnetocrystalline anisotropy.

• Journal of the Korean Ceramic Society
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• v.44 no.12
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• pp.715-719
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• 2007

STS444 with or without $La_{0.9}Sr_{0.1}MnO_3$ (LSM)-coating was contacted to $La_{0.6}Sr_{0.4}Co_{0.2}Fe_{0.8}O_3$ (LSCF) cathode on various electrolyte materials and the polarization resistance $(R_p)$ was measured by impedance spectroscopy. By making a symmetric half-cell and contacting only one side of the cathode with the interconnect, the effect of chromium (Cr) poisoning was separated from the aging effects. When the LSCF cathode was contacted with LSM-coated STS (stainless steel), $R_p$ of LSCF was lower than that contacted with the uncoated STS. Impedance patterns measured for the working electrode (W.E.), the counter electrode (C.E.) at $600^{\circ}C$ in air were analyzed. Normalized data of net Cr effect showed that $Ce_{0.9}Gd_{0.1}O_2$ (GDC) electrolyte is more tolerant to the chromium poisoning than $La_{0.9}Sr_{0.1}Ga_{0.8}Mg_{0.2}$ (LSGM) or 8 mol% $Y_2O_3-doped$ $ZrO_2$ (YSZ) electrolytes.

• Journal of the Korean Ceramic Society
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• v.43 no.6 s.289
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• pp.369-375
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• 2006

[ $(Ba_{0.5}Sr_{0.5})_{0.99}Co_{x}Fe_{1-x}O_{3-{\delta}}$ ] [x=0.8, 0.2](BSCF) powders were synthesized by a Glycine-Nitrate Process (GNP) and the electrochemical performance of the BSCF cathode on a scandia stabilized zirconia, $[(Sc_{2}O_3)_{0.11}(ZrO_2)_{0.89}]-1Al_{2}O_3$ was investigated. In order to prevent unfavorable solid-state reactions between the cathode and zirconia electrolyte, a GDC ($Gd_{0.1}Ce_{0.9}O_{2-{delta}}$) buffer layer was applied on ScSZ. The BSCF (x = 0.8) cathode formed on GDC(Buffer)/ScSZ(Disk) showed poor electrochemical property, because the BSCF cathode layer peeled off after the heat-treatment. On the other hand, there were no delamination or peel off between the BSCF and GDC buffer layer, and the BSCF (x = 0.2) cathode exhibited fairly good electrochemical performances. It was considered that the observed phenomenon was associated with the thermal expansion mismatch between the cathode and buffer layer. The ohmic resistance of the double layer cathode was slightly lower than that of the single layer BSCF cathode due to the incorporation of platinum particle into the BSCF second layer.

• Journal of the Korean Ceramic Society
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• v.53 no.5
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• pp.489-493
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• 2016

Scandia ($Sc2O_3$)-stabilized zirconia (ScSZ) electrolyte-supported symmetrical solid oxide electrolyzer cells (SOECs), in which lanthanum strontium cobalt ferrite (LSCF)-gadolinia ($Gd_2O_3$)-doped ceria (GDC) composite materials are used as both the cathode and anode, were fabricated and their high temperature steam electrolysis (HTSE) performance was investigated. Current density-voltage curves were obtained for cells operated in 10% $H_2O$/90% Ar at 750, 800, and $850^{\circ}C$. It was possible to determine the ohmic, cathodic, and anodic contributions to the total overpotential using the three-electrode technique. The HTSE performance was significantly improved in the symmetrical cell with LSCF-GDC electrodes compared to the cell consisting of an Ni-YSZ cathode and LSCF-GDC anode. It was found that the overpotential due to the LSCF-GDC cathode largely decreased and, at a given current density, the total cell voltage decreased, which resulted in the enhanced hydrogen production rate in the symmetrical cell.

• Journal of Sensor Science and Technology
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• v.28 no.3
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• pp.187-190
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• 2019

We proposed and demonstrated DC(direct current) optical current sensor based on Faraday effect for HVDC(high voltage direct current). The RIG((Bi1.3Gd0.43Y1.27)Fe5O12) was adopted as Faraday device because of its high Verdet constant and good thermal stability. The differential amplification scheme for signal processing was present. The sensor showed high linear response for the input current. Measurement range of the sensor was 0~200A and measurement error was less than 1%.

• Journal of the Korean Magnetics Society
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• v.5 no.5
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• pp.720-725
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• 1995

Bi-substituted gadolinium iron garnet films were deposited on GGG(111) and NGG (111) substrates by irradiating KrF excimer laser onto targets having compositions of $Bi_{x}Gd_{3-x}Fe_{5}O_{12}$ ($2.0{\leq}x{\leq}3.0$) under substrate temperature of $580~620^{\circ}C$. Analysis on structure, composition and angle of Faraday rotation, ${\theta}_{F}$, were carried out. The composition, the structure and the magneto-optical properties of the obtained films were found to be strongly dependent both on the compositions of the targets and on the pressure of oxygen. Before annealing in air, all films showed ${\theta}_{F}{\geq}0$ at ${\lambda}=6328{\AA}$, while several films showed ${\theta}_{F}{\leq}0$ after the annealing. The highest value of Bi-substitution up to x = 1.76 with uniform composition was obtained.

• Proceedings of the Korean Magnestics Society Conference
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• 2016.05a
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• pp.165-166
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• 2016

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.32 no.3
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• pp.201-206
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• 2019

This report constitutes the first demonstration in Korea of single-crystal lateral gallium oxide ($Ga_2O_3$) as a metal-oxide-semiconductor field-effect-transistor (MOSFET), with a breakdown voltage in excess of 480 V. A Si-doped channel layer was grown on a Fe-doped semi-insulating ${\beta}-Ga_2O_3$ (010) substrate by molecular beam epitaxy. The single-crystal substrate was grown by the edge-defined film-fed growth method and wafered to a size of $10{\times}15mm^2$. Although we fabricated several types of power devices using the same process, we only report the characterization of a finger-type MOSFET with a gate length ($L_g$) of $2{\mu}m$ and a gate-drain spacing ($L_{gd}$) of $5{\mu}m$. The MOSFET showed a favorable drain current modulation according to the gate voltage swing. A complete drain current pinch-off feature was also obtained for $V_{gs}<-6V$, and the three-terminal off-state breakdown voltage was over 482 V in a $L_{gd}=5{\mu}m$ device measured in Fluorinert ambient at $V_{gs}=-10V$. A low drain leakage current of 4.7 nA at the off-state led to a high on/off drain current ratio of approximately $5.3{\times}10^5$. These device characteristics indicate the promising potential of $Ga_2O_3$-based electrical devices for next-generation high-power device applications, such as electrical autonomous vehicles, railroads, photovoltaics, renewable energy, and industry.