• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.120-120
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• 2003

The metallic oxide nanomaterials including ZnO, Ga$_2$O$_3$, TiO$_2$, and SnO$_2$ have been synthesized by a number of methods including laser ablation, arc discharge, thermal annealing procedure, catalytic growth processes, and vapor transport. We have been interested in preparing the nanomaterials of Ga$_2$O$_3$, which is a wide band gap semiconductor (E$_{g}$ =4.9 eV) and used as insulating oxide layer for all gallium-based semiconductor. Ga$_2$O$_3$ is stable at high temperature and a transparent oxide, which has potential application in optoelectronic devices. The Ga$_2$O$_3$ nanoparticles and nanobelts were produced using GaN single crystals, which were grown by flux method inside SUS$^{TM}$ cell using a Na flux and exhibit plate-like morphologies with 4 ~ 5 mm in size. In these experiments, the conventional electric furnace was used. GaN single crystals were pulverized in form of powder for the growth of Ga$_2$O$_3$ nanomaterials. The structure, morphology and composition of the products were studied mainly by X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), and high-resolution transmission electron microscopy (HRTEM).).

• Journal of IKEEE
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• v.22 no.1
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• pp.180-184
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• 2018

Gallium oxide ($Ga_2O_3$) and silicon carbide (SiC) are the material with the wide band gap ($Ga_2O_3-4.8{\sim}4.9eV$, SiC-3.3 eV). These electronic properties allow high blocking voltage. In this work, we investigated the characteristic of $Ga_2O_3$ and 4H-SiC vertical depletion-mode metal-oxide-semiconductor field-effect transistors. We demonstrated that the blocking voltage and on-resistance of vertical DMOSFET is dependent with structure. The structure of $Ga_2O_3$ and 4H-SiC vertical DMOSFET was designed by using a 2-dimensional device simulation (ATLAS, Silvaco Inc.). As a result, 4H-SiC and $Ga_2O_3$ vertical DMOSFET have similar blocking voltage ($Ga_2O_3-1380V$, SiC-1420 V) and then when gate voltage is low, $Ga_2O_3-DMOSFET$ has lower on-resistance than 4H-SiC-DMOSFET, however, when gate voltage is high, 4H-SiC-DMOSFET has lower on-resistance than $Ga_2O_3-DMOSFET$. Therefore, we concluded that the material of power device should be considered by the gate voltage.

• Journal of IKEEE
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• v.22 no.2
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• pp.427-431
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• 2018

This research was worked about $Ga_2O_3$ Epi wafer that was one of the mose wide band gap semiconductors to be used power semiconductor industry. This wafer was grown $5.3{\mu}m$ thickness on Sn doped $Ga_2O_3$ Substrate by HVPE(Hydride Vapor Phase Epitaxy). Generally, we can fabricate 600V class power semiconductor devices when the thickness of compoound power semiconductor is $5{\mu}m$. but in case of $Ga_2O_3$ Epi wafer, we can obtain over 1000V class. As a result of J-V measurment of the grown $Ga_2O_3$ Epi wafer, we obtain $2.9-7.7m{\Omega}{\cdot}cm^2$ on resistance. Specially, in case of reverse, we comfirmed a little leakage current when the reverse voltage is over 200V.

• Journal of Ceramic Processing Research
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• v.13 no.spc1
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• pp.59-63
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• 2012

Ga2O3-core/CdO-shell nanowires were synthesized by a two step process comprising thermal evaporation of GaN powders and sputter-deposition of CdO. Transmission electron microscopy (TEM) and X-ray diffraction (XRD) analyses revealed that the cores and the shells of the annealed coaxial nanowires were single crystal of monoclinic Ga2O3 and FCC CdO, respectively. As-synthesized Ga2O3 nanowires showed a broad emission band at approximately 460 nm in the blue region. The blue emission intensity of the Ga2O3 nanowires was slightly decreased by CdO coating, but it was significantly increased by subsequent thermal annealing in a reducing atmosphere. The major emission peak was also shifted from ~500 nm by annealing in a reducing atmosphere, which is attributed to the increases in the Cd interstitial and O vacancy concentrations in the cores.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.12-13
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• 2006

$Ga_2O_3$ is associated with the fabrication of thin window layer of solar cell. Usually, $Ga_2O_3$ is synthesized from Ga-metal oxidation method and GaN mono-crystal heat treatment method. We synthesized $Ga_2O_3$ powder using two methods and analyzed powder using latter method compared with powder by former method. XPS, XRD, IR analysis are conducted. XPS result, surface of GaN powder is almost oxidized to $Ga_2O_3$ at $1124^{\circ}C$ heat treatment and XRD and IR result, the inside of GaN powder is dramatically oxidized at $1124^{\circ}C{\sim}1300^{\circ}C$.

• Journal of the Korean Applied Science and Technology
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• v.21 no.3
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• pp.231-237
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• 2004

Ga-MFI was synthesized by a hydrothermal process at atmospheric pressure. The effect of mole ratios of reactants on crystallization was also investigated thoroughly. The characteristics of synthesized Ga-MFI was compared with ZSM-5. The synthesis of Ga-MFI was carried out with five different mole-compositions of $\underline{a}SiO_2-\underline{b}Ga_2O_3-\underline{c}Na_2O-\underline{d}TPA_2o-\underline{e}H_2O$. The synthesized Ga-MFI and ZSM-5 were characterized by XRD and FT-IR. The inorganic cation ($Na^+$) and water played an important role in crystallinity and the organic cation ($TPA^+$) as a template played a great influence on yields. With the increase in the amount of $Ga^{3+}$, crystallization time was increased. With a fixed $SiO_2/Ga_2O_3$ ratio of 400, the optimum reaction condition was obtained at $H_2O/SiO_2$=30${\sim}$35, $Na_2O/SiO_2$=0.5${\sim}$0.6, and $TPA_2O/Na_2O$=1${\sim}$1.25. In these cases, the crystallinity and yield were more than 95% and 90%, respectively. By comparing IR spectrum of Ga-MFI with those of ZSM-5 and silicalite, it was found that Ga-MFI showed a unique peak at 970 $cm^{-1}$, which may be used to identify Ga-MFI from ZSM-5 and silicalite.

• Journal of the Korean Ceramic Society
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• v.35 no.11
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• pp.1148-1154
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• 1998

Ga K-edge EXAFS spectra of PbO-Ga2O3 glasses were recorded at liquid nitrogen temperature and analyz-ed in order to quantitatively understand the medium-range-order arrangement around gallium in the glasses. The second peak was generated from a backscattering of the neighbor balliums and the Ga-Ga distance is ~3.13 A with Ga coordination number of ~2.7 Therefore GaO4 tetrahedra are connected through the cor-ner~sharing mode and form their own clusters made of the tetrahedra sharing more than 3 corners while some chains or rings are also present. These connection schemes of the GaO4 tetrahedra are believed to form the substantial part of the network structure.

• Transactions of the Korean hydrogen and new energy society
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• v.3 no.2
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• pp.25-33
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• 1992

With the aim to obtain $TiO_2$ films with an increased photorespones and absorbance in the visible region of the solar spectrum, the direct oxidation of titanium alloys were performed. In this study, $Ti-Ga_2O_3$ alloy was prepared by mixing, pressing and arc melting of appropriate amounts of titanium and $Ga_2O_3$ powder. Electrochemical measurements were performed in three electrode cell using electrolyte of 1M NaOH solution. The oxide films on $Ti-Ga_2O_3$ alloy was composed of $Ti_2O$, TiO, $TiO_2$, $Ga_2TiO_5$. The free energy efficiency (${\eta}e$) of $Ti-Ga_2O_3$ oxide films had 0.8~1.3 % and were increased with the increase of $Ga_2O_3$ content up to 10wt %. The onset potential ($V_{on}$) had -0.8V~0.9V ranges and were shifted to anodic direction with the increase of $Ga_2O_3$ content. The spectral response of Ti-$Ga_2O_3$ oxides were similar to the response of the $TiO_2$ and their $E_g$ were observed to 2.90~3.0eV. Variations of onset potential($V_{on}$) associated with electrolyte pH were -59mV/pH. This probably reflects the nature of the bonding of $OH^-$ ion to the $TiO_2$ surface, a common phenomena in the transition-metal oxides.

• The Korean Journal of Ceramics
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• v.3 no.2
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• pp.134-138
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• 1997

$Dy^{3+}-(or Tm^{3+}-)$ doped $Ga_2O_3 \;and\; ZnGa_2O_4$ phosphors were prepared using the solid state reaction method to investigate their photoluminescent characteristics. Under 254 nm excitation, $Dy^{3+}-doped Ga2_O_3$ exhibited two emission bands of 460~505nm and 570~600nm. On the other hand, $Dy^{3+}-(or Tm^{3+}-)$ doped $ZnGa_2O_4 $phosphors exhibited a broad-band emission extending from 330 nm to 610 nm, peaking at about 430 nm(or 370 nm). In this study, an emission peak shift of nealy 50 nm towards longer wavelength region was observed with $Dy^{3+}$ doping in the $ZnGa_2O_4 $.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.24 no.4
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• pp.10-16
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• 2010

In this paper, synthesis here Mn add to Ar injection the state and a vacuum an atomosphere $ZnGa_2O_4$ : Mn, ZnO and $Ga_2O_3$ power of 1 : 1 mole ratio mixture. Manufacture a close examination of oxygen a component variation luminescence a specific character reach an in fluence of $ZnGa_2O_4$ : Mn, luminescence spectrum observation also an explanation of Mn site symmetry and at luminescence spectrum reach an influence from low temperature photoluminescence spectrum.