• 한국초전도ㆍ저온공학회논문지
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• 제15권3호
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• pp.5-8
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• 2013

We have studied Hall effect for potassium (K)-doped $BaFe_2As_2$ superconducting thin films by analyzing the relation between the longitudinal resistivity (${\rho}_{xx}$) and the Hall resistivity (${\rho}_{xy}$). The thin films used in this study were fabricated on $Al_2O_3$ (000l) substrates by using an ex-situ pulsed laser deposition (PLD) technique under a high-vacuum condition of ~$10^{-6}$ Torr. The samples showed the high superconducting transition temperatures ($T_c$) of ~ 40 K. The ${\rho}_{xx}$ and the ${\rho}_{xy}$ for K-doped $BaFe_2As_2$ thin films were measured by using a physical property measurement system (PPMS) with a temperature sweep (T-sweep) mode at an applied current density of $100A/cm^2$ and at magnetic fields from 0 up to 9 T. We report the T-sweep results of the ${\rho}_{xx}$and the ${\rho}_{xy}$ to investigate Hall scaling behavior on the basis of the relation of ${\rho}_{xy}={A{\rho}_{xx}}^{\beta}$. The ${\beta}$ values are $3.0{\pm}0.2$ in the c-axis-oriented K-doped $BaFe_2As_2$ thin films, whereas the thin films with various oriented-directions like a polycrystal showed slightly lower ${\beta}$ than that of c-axis-oriented thin films. Interestingly, the ${\beta}$ value is decreased with increasing magnetic fields.

• 한국광학회:학술대회논문집
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• 한국광학회 2000년도 제11회 정기총회 및 00년 동계학술발표회 논문집
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• pp.52-53
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• 2000

광굴절 단결정을 이용한 홀로그램 저장은 일반적으로 Fe 흑은 Ce 과 같이 한 가지 종류의 이온이 첨가된 재료를 사용해왔다. 그러나 저장된 홀로그램 정보를 재생할때 지워지지 않도록 정착화를 위해 사용된 열이나 전기장 대신 자외선을 이용한 방법이 최근에 시도되고 있다$^{(1)}$ . 이 방법은 모든 것을 광으로 처리할 수 있는 장점이 있으나 2광자 기록방법$^{(2)}$ 과는 달리 두 가지 종류의 이온 첨가물이 필요하므로 전하의 이동이나 트랩과정이 더욱 복잡할 수밖에 없다. 특히 LiNbO$_3$ 재료는 photovoltaic 특성이 매우 강하여 다른 광굴절 재료와 구별된다. congruent Mn,Fe:LiNbO$_3$에 대한 실험 결과[1]와 stoichiometric LiNbO$_3$에서의 작은 polaron과 쌍 polaron에 의한 기록과 재생실험결과$^{(3)}$ 의 발표는 있으나 2중 첨가물의 LiNbO$_3$에 대한 이론적 접근은 아직 알려진 바 없다. 본 연구에서는 Mn,Ce:LiNbO$_3$와 Fe,W:LiNbO$_3$에서의 홀로그램 기록특성을 연구하였고 photovoltaic 효과를 고려한 홀로그램의 형성과 소멸과정에 대한 수치해석을 이용하여 결과의 설명을 시도하였다. (중략)

• 한국결정성장학회지
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• 제28권1호
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• pp.44-50
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• 2018

The improved high-performance Fe-based perovskite-type oxides ($La_{0.7}Sr_{0.3}M_xFe_{1-x}O_3$, M = Cu, Cr, Ni) were synthesized by a citrate method and characterized by SEM, EDS, XRD and NMR spectroscopy analyses. The characterization analyses revealed that the stoichiometric amounts of lattice oxygen were existed in all of perovskite samples except for a nickel-doped perovskite. Fe-based perovskites exhibited a surprising result for ortho-para $H_2$ spin conversion reaction, indicating two orders of magnitude higher conversions and conversion rates than commercial $Fe_2O_3$. It was considered that this conversion difference might be attributed to the presence of oxygen vacancies in Fe-based perovskites prepared in this study.

• Journal of Magnetics
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• 제12권4호
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• pp.137-140
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• 2007

We have studied the temperature dependent magnetic properties and crystalline phase transitionn in small amount Fe doped nickel chromite. The Crystalline structure of $NiCr_{1.7}Fe_{0.3}O_4$ is spinel cubic (Fd-3m) structure with a lattice constant $a_0=8.317\AA$ at room temperature. The magnetic $N\acute{e}el$ temperature $(T_N)$ of the Fe doped nickel chromite sample is determined to be 250 K. The $M\ddot{o}ssbauer$ spectra exhibit that there are two magnetic phases with the two different sites for the $Cr^{3+}$ ions. The spectrum at 4.2 K is fitted to two magnetic components of the magnetic hyperfine fields $H_{hf}=496$ and 485 kOe. From the spectrum at 295 K, the electric quadrupole splittings are observed with large values of 0.49 and 0.50 mm/s, respectively. The values of the isomer shifts at all temperature ranges show that the Fe ions are ferric states. We are suggested that the dynamic Jahn-Teller distortion and anisotropic magnetic relaxation effects due to the crystalline phase transition.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.336-336
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• 2013

Zinc oxide (ZnO) based transparent oxide semiconductors have been studied due to their high transmittance and electrical conductivity. Pure ZnO have unstable optical and electrical properties at high temperatures but doped ZnO thin films can have stable optical and electrical properties. In this paper, transparent oxide semiconductors of Y-doped ZnO thin films prepared by sol-gel method. The ionic radius of $Y^{3+}$ (0.90 A) is close to that of $Zn^{2+}$ (0.74 A), which makes Y suitable dopant for ZnO thin films. The Sn-doped ZnO thin films were deposited onto quartz substrates with different atomic percentages of dopant which were Y/Zn = 0, 1, 2, 3, 4, and 5 at.%. These thin films were pre-heated at $150^{\circ}C$ for 10 min and then annealed at $500^{\circ}C$ or 1 h. The structural and optical properties of the Y-doped ZnO thin films were investigated using field-emission scanning electronmicroscopy (FE-SEM), X-ray diffraction (XRD), UV-visible spectroscopy, and photoluminescence (PL).

• 한국세라믹학회지
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• 제45권12호
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• pp.766-771
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• 2008

We fabricated single cells with a cathode consisting of a $LaNi_{0.6}Fe_{0.4}O_3-Ce_{0.8}Sm_{0.2}O_{1.9}$ composite (LNF-S20DC composite) active layer and an LNF current collecting layer on a ${0.89ZrO_2}-{0.10Sc_2}{O_3}-0.01{Al_2}{O_3}$ electrolyte sheet. The cathode layers were prepared by the screen-printing method. The cathode properties of these cells were measured by the AC impedance method at $800^{\circ}C$. The cathodes with the ceria-LNF composite active layer exhibited high power performance prior to current loading. We investigated the influence of the mixture ratio of LNF and S20DC on the cathodes properties. The Sm in the ceria particles of the composite cathode was substituted with other rare-earth elements. Cathodes with Pr and Gd co-doped ceria in the active layer provided the better performance than those with Sm- or Gd-doped ceria.

• 센서학회지
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• 제11권2호
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• pp.77-83
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• 2002

저비용과 휴대성을 고려한 알코올 경보기의 제작을 위해 동작온도가 낮고 감도가 높은 반도체 가스 센서를 제작하였다. $Fe_2O_3$에 금속 산화물인 $MoO_3$, $V_2O_5$, $TiO_2$, 그리고 CdO 등을 첨가하여 스크린 프린팅법을 이용하여 센서를 제작하였다. 센서의 전기적 안정성을 위하여 질소 분위기에서 $700^{\circ}C$, 2시간 동안 열처리를 하였다. 알코올, 탄화수소계 가스와 담배연기 등을 사용하여 센서의 가스 감도를 조사하였다. $V_2O_5$를 첨가한 센서가 알코올 가스 1,000 ppm에 대해서 약 $80{\sim}90%$의 감도를 보이며, 타 가스에 대한 선택성도 가짐을 알 수 있었다. 제작된 센서와 PIC-chip을 사용하여 휴대 가능한 경보기를 제작할 수 있었다.

• 한국전기전자재료학회논문지
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• 제33권1호
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• pp.78-82
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• 2020

In this study, MOSFETs fabricated on Si-doped, MBE-grown β-Ga₂O₃ are demonstrated. A Si-doped Ga₂O₃ epitaxial layer was grown on a Fe-doped, semi-insulating 1.5 cm × 1 cm Ga₂O₃ substrate using molecular beam epitaxy (MBE). The fabricated devices are circular type MOSFETs with a gate length of 3 ㎛, a source-drain spacing of 20 ㎛, and a gate width of 523 ㎛. The device exhibited a good pinch-off characteristic, a high on-off drain current ratio of approximately 2.7×10⁹, and a high breakdown voltage of 1,080 V, which demonstrates the potential of Ga₂O₃ for power device applications including electric vehicles, railways, and renewable energy.

• 한국세라믹학회지
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• 제48권1호
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• pp.110-115
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• 2011

$Gd_2O_3$-doped $CeO_2$ (GDC) and $La_{0.6}Sr_{0.4}Co_{0.2}Fe_{0.8}O_3$ (LSCF) composite cathode materials were prepared in order to be applied to intermediate-temperature solid oxide fuel cells. The electrochemical polarization was evaluated using ac impedance spectroscopy involving geometric restriction at the interface between an ionic electrolyte and a mixed-conducting cathode. In order to optimize the cathode composites applicable to a GDC electrolyte, the cathode composites were evaluated in terms of polarization losses with regard to a given electrolyte, i.e., GDC electrolyte. The polarization increased significantly with decreasing temperature and was critically dependent on the compositions of the composite cathodes. The optimized cathode composite was found to consist of GDC 50 wt% and LSCF 50 wt%; the corresponding normalized polarization loss was calculated to be 0.64 at $650^{\circ}C$.

• Journal of the Korean Physical Society
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• 제73권11호
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• pp.1708-1711
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• 2018

The polycrystalline sample of $Ba_2Co_{1.5}Mg_{0.5}Fe_{11.88}Ga_{0.12}O_{22}$ Y-type hexaferrite, doped with Ga-cation, was prepared by using the solid-state reaction method. The crystalline structure of sample was investigated by x-ray diffractometer (XRD), and the magnetic properties of sample were measured by vibrating sample magnetometer (VSM), and $M{\ddot{o}}ssbauer$ spectrometer. The crystal structure of prepared sample was determined to be rhombohedral with space group R-3m. From the temperature dependence of the magnetization curves under 100 Oe between 4.2 and 740 K, two temperature-dependent magnetic transitions occurred in the $Ba_2Co_{1.5}Mg_{0.5}Fe_{11.88}Ga_{0.12}O_{22}$ sample. $M{\ddot{o}}ssbauer$ spectra of the sample were analyzed at various temperatures ranging from 4.2 to 620 K, and the $Ba_2Co_{1.5}Mg_{0.5}Fe_{11.88}Ga_{0.12}O_{22}$ sample showed abrupt changes in $H_{hf}$ and $E_Q$ at 200 K, indicating the spin transition effect. We have also determined the magnetic transition temperature $T_C$, in addition to the temperature dependent magnetization and ZVC measurements.