• Proceedings of the KIEE Conference
• /
• 1993.07b
• /
• pp.1147-1149
• /
• 1993

ZnO/$SnO_2$:F bilayer films have been prepared by pyrosol deposition method to develop optimum transparent electrode for use in amorphous silicon solar cells. The solution for $SnO_2:F$ film was composed of $SnCl_4{\cdot}5H_2O,\;NH_4F,\;CH_3OH$ and HCl, and ZnO films have been deposited on the $SnO_2:F$ films by using the solution of $ZnO(CH_3COO){_2}{\cdot}2H_2O,\;H_2O\;and\;CH_3OH$. These films have been investigated the variation of electrical and optical properties under the hydrogen plasma exposure. The sheet resistance of the $SnO_2:F$ film was sharply increased and its transmittance was decreased with the blackish effect after plasma treatment. However, the ZnO/$SnO_2:F$ bilayer film was shown hydrogen plasma durability because the electrical and optical properties was almost unchanged more then 60 seconds exposure time.

• Journal of the Korean institute of surface engineering
• /
• v.32 no.2
• /
• pp.125-133
• /
• 1999

Fluorine-doped $SnO_2$ thin films were deposited on soda-lime glass substrates by reactive DC magnetron sputtering method. Crystallinity as well as electrical and optical properties of $SnO_2$ : F thin film were investigated as the variations of deposition conditions such as substrate temperature, DC Power, $O_2$ gas pressure, $SF_6$ gas pressure. $SnO_2$ : F thin film deposited with 5% $SF_6$ gas pressure showed electrical resistivities of $2.5\times10^{-3}$cm with the average optical transparency (about 80%) These electrical and optical properties were found to be related to the crystallinity of $SnO_2$ : F thin films.

• Proceedings of the KIEE Conference
• /
• 2009.07a
• /
• pp.1351_1352
• /
• 2009

We deposited $SnO_2$:F thin films by atomospheric pressure chemical vapor deposition(APCVD) on corning glass. $SnO_2$:F films were used as transparent conductive oxide (TCO) electrode for Si thin film solar cells. We have investigated structural, electrical and optical properties of $SnO_2$:F thin films and fabricated thin film Si solar cells by plasma enhanced CVD(PECVD) on $SnO_2$:F thin films The cells were characterized by I-V measurement using AM1.5 spectra. Conversion efficiency of our cells were between 5.61% and 6.45%.

• Journal of Sensor Science and Technology
• /
• v.3 no.2
• /
• pp.65-73
• /
• 1994

TO:F($SnO_{2}:F$) thin films were prepared by RF magnetron sputtering system. The dependence of their structural, electrical, and optical properties on deposition conditions such as substrate temperature, working pressure and power was studied. The optimum conditions of TO:F thin film are $SnF_{2}$ content of 15wt.% in target, RF power of 150W, substrate temperature of $150^{\circ}C$ and working pressure of 2mmTr. The resistivity and transmittance at 550nm in visible spectrum of the TO:F film deposited at optimum condition are $9{\times}10^{-4}{\Omega}{\cdot}cm$ and above 85%, respectively. For the films deposited from the target without $SnF_{2}$ and with 15wt.% $SnF_{2}$, the optical bandgaps calculated from the transmittance curves are 3.84 and 3.9eV, respectively. X-ray diffraction patterns showed that TO and TO:F films had tetragonal rutile structure with (101), (200) direction.

• Progress in Superconductivity and Cryogenics
• /
• v.15 no.4
• /
• pp.15-20
• /
• 2013

We investigated the flux pinning properties of both 10 mol% Zr-and Sn-doped $YBa_2Cu_3O_{7-{\delta}}$ (YBCO) films with the same thickness of ~350 nm for a comparative purpose. The films were prepared on the $SrTiO_3$ (STO) single crystal substrate by the metal-organic deposition (MOD) process. Compared with Sn-doped YBCO film, Zr-doped one exhibited a significant enhancement in the critical current density ($J_c$) and pinning force density ($F_p$). The anisotropic $J_{c,min}/J_{c,max}$ ratio in the field-angle dependence of $J_c$ at 77 K for 1 T was also improved from 0.23 for Sn-doped YBCO to 0.39 for Zr-doped YBCO. Thus, the highest magnetic $J_c$ values of 9.0 and $2.9MA/cm^2$ with the maximum $F_p$ ($F_{p,max}$) values of 19 and $5GN/m^3$ at 65 and 77 K for H // c, respectively, could be achieved from Zr-doped YBCO film. The stronger pinning effect in Zr-doped YBCO film is attributable to smaller $BaZrO_3$ (BZO) nanoparticles (the average size ${\approx}28.4$ nm) than $YBa_2SnO_{5.5}$ (YBSO) nanoparticles (the average size ${\approx}45.0$ nm) incorporated in Sn-doped YBCO film since smaller nanoparticles can generate more defects acting as effective flux pinning sites due to larger incoherent interfacial area for the same doping concentration.

• 한국신재생에너지학회:학술대회논문집
• /
• 2009.06a
• /
• pp.65-68
• /
• 2009

본 연구에서는 eagle 2000 glass위에 APCVD(atmospheric CVD)증착법으로 $SnO_2$:F 박막을 제조하였다. 공정 온도, doping 농도, TTC(Tin tetrachloride)와 $H_2O$, $CH_3OH$의 조성비를 공정 변수로 두었으며, 각 변수에 대한 전기적, 광학적 특성 및 결정성을 확인하였다. hall measurement를 이용 제작된 박막의 전기적 특성을 확인 하였고, uv-VIS spectroscopy, hazemeer를 이용 박막의 광학적 특성을 확인 하였다. 또한 XRD, FESEM, AFM을 이용 박막의 결정성 및 표면 특성을 확인 하였다. 박막의 결정성을 결정짓는 증착 온도의 경우 $590^{\circ}C$에서 완벽한 Tetragonal rutile 형태의 결정성을 보였으며 $SnO_2$:F film $1{\mu}m$ thickness에서 $10({\Omega}/{\square})$ 내외의 우수한 면저항값과 $30(cm^2/Vs)$ 이상의 mobility값을 확인 하였으며, 가시광영역대 에서 높은 투과율과 우수한 haze값을 얻었다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2000.11a
• /
• pp.571-574
• /
• 2000

In this study, Tin oxide thin film for secondary battery was deposited on Pt/Ti/Si(100). It was fabricated by r.f. reactive sputtering with Tin metal target. At constant power (130W), pressure (Base 5$\times$10$^{-6}$ Torr, working 5$\times$10$^{-3}$ Torr) and at room temperature, it was fabricated by Ar/O2 gas ratio. After deposition, we got AFM & SEM to investigated surface of thin films and had XRD to find crystalline of thin films. Charge/discharge characteristics were carried out in 1M LiPF$_{6}$ , EC:DMC = 1:1 liquid electrolyte using lithium metal at room temperature.

• Journal of Sensor Science and Technology
• /
• v.14 no.2
• /
• pp.63-68
• /
• 2005

The nano-grained Pd or Pt-doped $SnO_{2}$ thin films were deposited on the alumina substrate at ambient temperature or $300^{\circ}C$ by using an R.F. magnetron sputtering system and then annealed at $650^{\cir}C$ for 1 hour or 4 hours in air. The crystallinity and microstructure of the annealed films were analyzed. A grain size of the thin films was 30 nm to 50 nm. As a result of gas sensitivity measurements to an alcohol vapor of $36^{\circ}C$, the 2 wt.% Pt-doped $SnO_{2}$ thin-film sensor deposited at $300^{\circ}C$ and annealed at $650^{\circ}C$ for 4 hours showed the highest sensitivity.

• Journal of the Korean institute of surface engineering
• /
• v.56 no.3
• /
• pp.201-207
• /
• 2023

Eu³⁺-doped SnO² (SnO²:Eu³⁺) phosphor thin films were grown on quartz substrates by radio-frequency magnetron sputtering. The deposition temperature was varied from 100 to 400 ℃. The X-ray diffraction patterns showed that all the thin films had two mixed phases of SnO₂ and Eu₂Sn₂O₇. The 880 nmthick SnO²:Eu³⁺ thin film grown at 100 ℃ exhibited numerous pebble-shaped particles. The excitation spectra of SnO²:Eu³⁺ thin films consisted of a strong and broad peak at 312 nm in the vicinity from 250 to 350 nm owing to the O^2--Eu3+ charge transfer band, irrespective of deposition temperature. Upon 312 nm excitation, the SnO²:Eu³⁺ thin films showed a main emission peak at 592 nm arising from the ⁵D₀→⁷F₁ transition and a weak 615 nm red band originating from the ⁵D₀→⁷F₂ transition of Eu³⁺. As the deposition temperature increased, the emission intensities of two bands increased rapidly, approached a maximum at 100 ℃, and then decreased slowly at 400 ℃. The thin film deposited at 200 ℃ exhibited a band gap energy of 3.81 eV and an average transmittance of 73.7% in the wavelength range of 500-1100 nm. These results indicate that the luminescent intensity of SnO²:Eu³⁺ thin films can be controlled by changing the deposition temperature.

• Journal of the Korean institute of surface engineering
• /
• v.18 no.3
• /
• pp.116-124
• /
• 1985

Chemical vapor deposition of $SnO_2$ on Pyrex glass substrate has been investigated using $SnCl_4$ and Oxygen at relatively low temperatures(300-500$^{\circ}C$). The critical flow rate, which delineated the surface reaction controlled region from the mass transfer controlled region, was increased with deposition temperature. The apparent activation energy obtained in surface reaction controlled region was about 6Kcal/mole. The results show that deposition rate, electrical conductivity and transmittance were affected mainly by partial pressure of $SnCl_4$, but little by partial pressure f oxygen. The % transmission of 5000A-thick $SnO_2$ film was about 90% in visible spectrum region and sheet resistance was varied in 0.1-10${\Omega}$ per square shaped portion of the outer surface of the oxide.