• Journal of the Korean Ceramic Society
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• v.39 no.9
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• pp.829-834
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• 2002

Ferroelectric properties of $ErMnO_3$ thin films deposited on Si(100) substrate using Sol-gel process with metal salts were investigated. $ErMnO_3$ thin films with a (001) preferred orientation were crystallized at 800$^{\circ}C$. The $ErMnO_3$ thin film post-annealed at 800$^{\circ}C$ for 1 h showed the dielectric constant(k) of 26 and the dielectric loss(tan ${\delta}$) of 0.032 at the frequency range from 1 to 100 KHz. The grain size of $ErMnO_3$ thin film post-annealed at 800 for 1 h was 10∼30 nm. The remanent polarization($P_r$) of the $ErMnO_3$ thin films increased with increasing (001) preferred orientation. The $ErMnO_3$ thin films post-annealed at 800$^{\circ}C$ for 1 h showed the remanent polarization($P_r$) of 400 nC/$cm^2$, with the increase of post-annealing time at 800$^{\circ}C$, the coercive field($E_c$) of thin films was lowered because the dense and homogeneous thin films were obtained.

• Journal of the Korean Ceramic Society
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• v.37 no.10
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• pp.981-986
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• 2000

Er(NO$_3$)$_3$.5$H_2O$, Mn($CH_3$$CO_2$)$_2$.4$H_2O$를 출발원료로 사용하여 졸-겔법으로 제조한 ErMnO$_3$박막의 열처리 온도 및 기판 배향성에 따른 박막 배향성과 누설 전류 특성에 관하여 연구하였다. ErMnO$_3$박막은 75$0^{\circ}C$ 이하의 온도에서 1시간 열처리 시비정질상태였으나, 78$0^{\circ}C$ 이상의 온도에서 hexagonal pahse인 ErMnO$_3$로 결정화되었다. 열처리 온도가 증가할수록 기판 배향성과 무관하게 모든 방향으로 결정이 성장함을 알 수 있었다. 결정화 정도와 결정 성장 축에 따라 누설 전류 값이 변화함을 알 수 있었고, 80$0^{\circ}C$에서 열처리한 시편에서는 누설 전류 변화가 비선형적인 경향으로 증가하였으며, $10^{-5}$ A/$ extrm{cm}^2$ 이하로 유지되었다.

• Korean Journal of Materials Research
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• v.11 no.1
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• pp.44-47
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• 2001

Effects of $Er_2O_3$ addition on the dielectric properties of non-reducible $BaTi_3$-based X7R dielectrics with Ni electrode have been studied in reducing atmosphere. X7R with moderate temperature-dependence was developed after addition of $Er_2O_3$ with $MnO_2-MgO$; room-temperature dielectric constant and dissipation factor were >2900 and < 1.0%, respectively. The addition of $Er_2O_3$ greater than 3.0 mol% improved the temperature dependence of dielectric properties, but a significant decrease of the dielectric constant at room-temperature was observed. The TCC curves rebated clockwise with increasing MnO$_2$ content at a given additive system, 1.5 mol% $Er_2O_3$ and 2.0 mol% MgO.

• Journal of the Korean Ceramic Society
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• v.42 no.11 s.282
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• pp.763-769
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• 2005

Ferroelectric $ReMnO_3$(Re:Ho, Er) thin films were deposited on Si(100) substrate by Metal-Organic Chemical Vapor Deposition (MOCVD). Crystallinity and electric properties of $ReMnO_3$(Re:Ho, Er) thin films were investigated as a function of thermal heat treatment process, CHP (Conventional Heat-treatment Process) and RTP (Rapid Thermal Process). $ReMnO_3$(Re:Ho, Er) thin films prepared by RTP showed higher c-axis preferred orientation and homogeneous surface roughness than those prepared by CHP. The remnant polarization of ferroelectric hysteresis loop of $ReMnO_3$(Re:Ho, Er) thin films was strongly dependent on the c­axis preferred orientation of hexagonal single phase, and the leakage current characteristics of thin films were dependent on the homogeneity of grain size as well as surface roughness of thin films.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.2
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• pp.178-183
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• 2002

The effects of Dy$_2$O$_3$and Er$_2$O$_3$addition on the electromagnetic properties of Mn-Zn ferrite were investigated in the doping concentration range from 0.05 wt% to 0.25 wt%. All samples were prepared by standard fabrication of ferrite ceramics. The XRD patterns of sample were observed spinel and secondary phase. The densities of sample were showed nearly constant values. As the increased additive, electrical resistivity, initial permeability and real component of the series complex permeability increased with setting limits each other. Excess doped with Dy$_2$O$_3$ and Er$_2$O$_3$, those values decreased. The maximum electrical resistivity was observed with 0.15 we% and initial permeability was observed with 0.05 wt%. Magnetic loss decreased with additive and then increased in proportion to increased.

• Journal of the Korean Ceramic Society
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• v.39 no.12
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• pp.1128-1132
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• 2002

$ReMnO_3$(Re:Y, Ho, Er) thin films were prepared by MOCVD method available to non-volatile memory device with MFS-FET structure. $ReMnO_3$ thin films were deposited on the Si(100) substrate at 700${\circ}C$ for 2h. When the films were post-annealed at 900${\circ}C$ for 1h in air, the single phase of hexagonal $ReMnO_3$ thin films were detected. Ferroelectric properties of $ReMnO_3$ thin films were dependent on the degree of c-axis orientation in the single phase of hexagonal structure and remnant polarization (Pr) of $YMnO_3$ thin films with high degree of c-axis orientation was 105 nC/$cm^2$. Leakage current density was dependent on the grain size of microstructure and that of $YMnO_3$ thin films with grain size of 100∼150 nm was $10^{-8}$ A/$cm^2$ at applied voltage of 0.5 V.

• Proceedings of the Korean Ceranic Society Conference
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• 2000.04a
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• pp.132.2-132.2
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• 2000

• Proceedings of the Korean Ceranic Society Conference
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• 2000.10a
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• pp.181.2-181
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• 2000

• Proceedings of the Korean Ceranic Society Conference
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• 2002.10a
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• pp.43.1-43
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• 2002

• Proceedings of the Optical Society of Korea Conference
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• 2002.07a
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• pp.96-97
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• 2002

불순물을 이용한 비휘발성 홀로그램저장[1,2]은 기존의 열정착을 광정착으로 대치하는 방법으로서 여러 가지 희토류 혹은 전이금속이온을 첨가한 LiMbO$_3$ (LNO) 단결정 재료에서 시도되고 있다. 대표적인 재료로서 Mn,Fe：LNO 가 있으나 Mn,Ce：LNO, Cu,Co：LNO, Tb,Fe：LNO 등도 연구되고 있고 Stoichiometric LNO 경우엔 Pr：LNO, Er：LNO, Tb：LNO 등이 연구되고 있다. 그 외에 Mn：YAlO$_3$도 약하긴 하지만 비휘발성이 최근 보고되었다. (중략)