• Applied Chemistry for Engineering
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• v.27 no.5
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• pp.483-489
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• 2016

Here, we examined the photo-degradation efficiency of $Cu_2Se$-graphene nanocomposites synthesized by a facile and fast microwave-assisted technique. The prepared composites were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), Raman spectroscopy, XPS and UV-Vis spectrophotometry. The photocatalytic performance was studied through the decomposition of Rhodamine (Rh B) as a standard dye under visible light radiation. A 95% of Rh B degradation after visible light irradiation for 180 min indicates that the $Cu_2Se$-graphene composite exhibited significant photodegradation efficiency. Therefore, it can be concluded that the synthesized $Cu_2Se$-graphene can be used as a suitable catalyst for decomposing dye pollutants.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.14 no.6
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• pp.244-252
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• 2004

A stoichiometric mixture of evaporating materials for $CuInSe_2$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $_CuInSe2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were $620^{\circ}C$ and $410^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CuInSe_2$ single crystal thin films measured with Hall effect by van der Pauw method are $9.62\times10^{16}/\textrm{cm}^3$, 296 $\textrm{cm}^2$/Vㆍs at 293 K, respectively. The temperature dependence of the energy band gap of the $CuInSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g$(T) = 1.1851 eV -($8.99\times10^{-4} eV/K)T^2$(T + 153 K). The crystal field and the spin-orbit splitting energies for the valence band of the CuInSe$_2$ have been estimated to be 0.0087 eV and 0.2329 eV at 10 K, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the Δso definitely exists in the $\Gamma$6 states of the valence band of the $CuInSe_2$. The three photocurrent peaks observed at 10 K are ascribed to the $A_1-, B_1$-와 $C_1$-exciton peaks for n = 1.

• Clean Technology
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• v.26 no.4
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• pp.286-292
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• 2020

This study confirmed the effect of the Cu/CeO2-X catalyst on the CO oxidation activity at low temperature through the catalyst's structure and reaction characteristics. The catalyst was prepared by the wet impregnation method. Cu/CeO2_X catalysts were manufactured by loading Cu (active metal) using CeO2 (support) formed at different calcination temperatures (300-600 ℃). Manufactured Cu/CeO2_X catalysts were evaluated for the low-temperature activity of carbon monoxide. The Cu/CeO2_300 catalyst showed an activity of 90% at 125 ℃, but the activity gradually decreased as the calcination temperature of the CeO2-X and Cu/CeO2_600 catalysts showed an activity of 65% at 125 ℃. Raman, XRD, H2-TPR, and XPS analysis confirmed the physicochemical properties of the catalysts. Based on the XPS analysis, the lower the calcination temperature of the CeO2 was, the higher the unstable Ce3+ species (non-stoichiometric species) ratio became. The increased Ce3+ species formed a solid solution bond between Cu and CeO2-X, and it was confirmed by the change of the CeO2 peak in Raman analysis and the reduction peak of the solid solution structure in H2-TPR analysis. According to the result, the formation of the solid solution bond between Cu and Ce has been enhanced by the redox properties of the catalysts and by CO oxidation activity at low temperatures.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.03a
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• pp.81-81
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• 2003

The stochiometric mixture of evaporating materials for the CuGaSe$_2$ single crystal thin films were prepared from horizontal furnace. Using extrapolation method of X-ray diffraction patterns for the polycrystal CuGaSe$_2$, it was found tetragonal structure whose lattice constant no and co were 5.615$\AA$ and 11.025$\AA$, respectively. To obtains the single crystal thin films, CuGaSe$_2$ mixed crystal was deposited on throughly etched GaAs(100) by the Hot Wall Epitaxy(HWE) system. The source and substrate temperature were 61$0^{\circ}C$ and 45$0^{\circ}C$ respectively, and the growth rate of the single crystal thin films was about 0.5${\mu}{\textrm}{m}$/h. The crystalline structure of single crystal thin films was investigated by the double crystal X-ray diffraction(DCXD). Hall effect on this sample was measured by the method of van der pauw and studied on carrier density and mobility depending on temperature. From Hall data, the mobility was likely to be decreased by pizoelectric scattering in the temperature range 30K to 150K and by polar optical scattering in the temperature range 150K to 293K. The optical energy gaps were found to be 1.68eV for CuGaSe$_2$ single crystal thin films at room temperature. The temperature dependence of the photocurrent peak energy is well explained by the Varshni equation then the constants in the Varshni equation are given by a=9.615$\times$ 10$^{-4}$ eV/K, and $\beta$=335K. From the photocurrent spectra by illumination of polarized light of the CuGaSe$_2$ single crystal thin films. We have found that values of spin orbit coupling ΔSo and crystal field splitting ΔCr was 0.0900eV and 0.2498eV, respectively. From the PL spectra at 20K, the peaks corresponding to free bound excitons and D-A pair and a broad emission band due to SA is identified. The binding energy of the free excitons are determined to be 0.0626eV and the dissipation energy of the acceptor-bound exciton and donor-bound exciton to be 0.0352eV, 0.0932eV, respectively.

• Journal of the Korean Vacuum Society
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• v.22 no.1
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• pp.1-6
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• 2013

In this paper, to develop linear source for evaporating $600{\times}1,200mm$ size of large area CIGS absorber layer, we simulated linear thermal source and obtained ${\pm}5%$ thickness uniformity with various nozzle sizes and regular nozzle distance. Flux density was confirmed linear source length. Using this linear source, we tested thickness uniformity of Copper, Indium single layer which was obtained Cu ${\pm}5%$ and In ${\pm}5%$ thickness uniformity. And then CIGS absorber layers were evaporated with In-line single-stage co-evaporation. Large area CIGS absorber layers were confirmed composition uniformity of $$Cu{\leq_-}5%$$, $$In{\leq_-}7%$$, $$Ga{\leq_-}4%$$, $$Se{\leq_-}3%$$ with 600 mm width by XRF. Uniform shape of CIGS absorber layers was confirmed by SEM. XRD showed peaks which indicate chalcopyrite structure of CIGS absorber layers. Thus, developed linear source is suitable for evaporating CIGS absorber layer.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.400-400
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• 2011

조성에 따른 밴드갭 조절이 용이하고 광흡수율이 결정질, 비결정질 실리콘보다 높으며 황동광 구조를 갖는 CuIn1-xGaxSe2 계 물질은 박막형 태양전지의 광흡수층으로 널리 쓰이고 있다. 기존 동시증발법, 스퍼터링법 등 진공 공정 기반 기술이 갖는 고비용 문제와 대면적화 필요성에 대한 대안으로 비진공 박막 증착법이 활발히 연구되고 있는 가운데, 본 연구에서는 닥터블 레이드 코팅법을 이용하여 상온 및 상압 환경에서 쉽게 전구체 박막을 코팅한 후 열처리함으로써 CuInSe2 박막을 얻을 수 있었다. 고분자로 이루어진 바인더(binder) 물질과 금속 아세테이트 (metal acetate)계 전구체를 용매에 용해시킨 후 이를 도포하고, 추가적인 산화 열처리 과정 (oxidation)을 통해 최근 문제가 되고 있는 잔류탄소층 문제를 해결할 수 있었다. XRD 분석 결과, 금속 전구체들은 산화 과정 통해 금속산화물로 변환되고, 이후 셀렌화(Selenization)과정에서 산소(Oxygen)가 셀레늄(Selenium)으로 치환되는 반응이 일어나는 것으로 관찰되었다. 또한 SEM 분석을 통해 잔류 탄소층이 존재하지 않으며 결정립 크기가 최대 수백nm 정도임을 확인하였다.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.50 no.12
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• pp.607-613
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• 2001

Molybdenum thin films were deposited on the soda lime glass(SLG) substrates by direct-current planar magnetron sputtering, with a sputtering power density of $4.44W/cm^2$. The working pressure was varied from 0.5 mtorr to 20 mtorr to gain a better understanding of the effect of sputtering pressure on the morphology and microstructure of the Mo film. Thin films of $CU(InGa)Se_2$ (CIGS) were deposited on the Mo-coated glass by three stage co-evaporation process. The highest efficiency device was obtained at the maximum value of the tensive stress. The morphology of Mo-coated films were examined by using scanning electron microscopy The film's microstructure, such as the preferred orientation, the full width at half-maximum(FWHM), and the residual intrinsic stress were examined by X-ray diffraction.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.20 no.3
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• pp.107-112
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• 2010

The Cu$(In_{1-x}Ga_x)Se_2$ is the absorber material for thin film solar cell with high absorption coefficient of $1{\times}10^5cm^{-1}$. In the case of CIGS, the movable energy band gap from $CuInSe_2$ (1.00 eV) to $CuGaSe_2$ (1.68 eV) can be acquired while controlling Ga contain ratio. Generally, the co-evaporator method have used for development and fabrication of the CIGS absorption layer. However, this method should need many steps and lengthy deposition time with high temperature. For these reasons, in this paper, a new growth method of CIGS layer was attempted to hydride vapor transport (HVT) method. The CIGS mixed-source material reacted for HCl gas in the source zone was deposited on the substrate after transporting to growth zone. c-plane $Al_2O_3$ and undoped GaN were used as substrates for growth. The characteristics of grown samples were measured from SEM and EDS.

• 한국신재생에너지학회:학술대회논문집
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• 2010.06a
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• pp.61.1-61.1
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• 2010

$CuIn_{1-x}-GaxSe_2$ based materials with direct bandgap and high absorption coefficient are promising materials for high efficiency hetero-junction solar cells. CIGS champion cell efficiency(19.9%, AM1.5G) is very close to polycrystalline silicon(20.3%, AM1.5G). A reduction in the price of CIGS module is required for competing with well matured silicon technology. Price reduction can be achieved by decreasing the manufacturing cost and by increasing module efficiency. Manufacturing cost is mostly dominated by capital cost. Device properties of CIGS are strongly dependent on doping, defect chemistry and structure which in turn are dependent on growth conditions. The complex chemistry of CIGS is not fully understood to optimize and scale processes. Control of the absorber grain size, structural quality, texture, composition profile in the growth direction is important to achieving reliable device performance. In the present work, CIS nanoparticles were prepared by a simple wet chemical synthesis method and their structural and optical properties were investigated. XRD patterns of as-grown nanopowders indicate CIS(Cubic), $CuSe_2$(orthorhombic) and excess selenium. Further, as-grown and annealed nanopowders were characterized by HRTEM and ICP-OES. Grain growth of the nanopowders was followed as a function of temperature using HT-XRD with overpressure of selenium. It was found that significant grain growth occurred between $300-400^{\circ}C$ accompanied by formation of ${\beta}-Cu_{2-x}Se$ at high temperature($500^{\circ}C$) consistent with Cu-Se phase diagram. The result suggests that grain growth follows VLS mechanism which would be very useful for low temperature, high quality and economic processing of CIGS based solar cells.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.378-378
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• 2011

본 연구에서는 ZnO 나노선 기판을 제작하여 그 위에 밴드갭이 낮은 물질인 CdS, CdSe를 증착시킨 후 p-type 반도체 물질인 CuSCN을 증착시켜 안정성이 향상된 양자점 감응형 태양전지를 제작하였다. ZnO 나노선 기판은 투명한 FTO 기판 위에 ZnO를 진공증착시켜 seed layer를 제작하고 그 위에 $10{\mu}m$정도의 길이의 나노와이어를 성장시킨 후, 밴드갭이 낮은 CdS, CdSe 물질과의 다중접합을 이용하여 제작하고, 이러한 나노선 구조위에 chemical solution deposition을 이용하여 ${\beta}$-CuSCN을 형성시켰다. 양자점 감응형 태양전지는 ZnO 나노선을 photoanode로 이용하고 ZnO 나노선은 암모니아수와 아연염을 이용한, 비교적 저온의 수열합성법을 통해 합성하였고, sensitizer로 쓰인 CdS, CdSe 물질은 CBD방식을 통하여 합성된 나노선 위에 in-situ로 접합시켰다. 또한, 기존의 액체전해질을 이용한 양자점 감응형 태양전지의 안정성을 향상시키기 위해 p-type의 반도체 물질인 CuSCN물질을 propyl sulfide를 이용, ${\sim}80^{\circ}C$의 열을 가하여 in-situ 방식으로 다공성 구조에 효율적으로 접합이 가능하도록 deposition하였다. 일반적으로, CuSCN film은 홀 전도체로서의 장점을 지닌 반면, 전도성이 낮은 단점이 있기 때문에 이를 향상시키기 위해서 첨가제를 이용, 농도에 따라서 전도도가 향상되고 셀의 성능이 향상되는 것을 확인하였다. 이와 같이 합성된 구조는 주사전자현미경(SEM), X-선 회절(XRD), 솔라시뮬레이터 등의 분석장비를 이용하여 태양전지로서의 특성을 분석하였다. 또한 안정성 평가를 위하여 시간에 따른 셀의 특성변화도 비교하였다.